• Carbon letters
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• v.28
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• pp.31-37
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• 2018

This paper examines a simple one-step and catalyst-free method for synthesizing carbon nanoparticles from aliphatic alcohols and n-hexane with linear molecule formations by using a stable solution plasma process with a bipolar pulse and an external resistor. When the external resistor is adopted, it is observed that the current spikes are dramatically decreased, which induced production of a more stable discharge. Six aliphatic linear alcohols (methanol-hexanol) containing carbon with oxygen sources are studied as possible precursors for the massive production of carbon nanoparticles. Additional study is also carried out with the use of n-hexane containing many carbons without an oxygen source in order to enhance the formation of carbon nanoparticles and to eliminate unwanted oxygen effects. The obtained carbon nanoparticles are characterized with field emission-scanning electron microscopy, energy dispersive X-ray spectroscopy, and Raman spectroscopy. The results show that with increasing carbon ratios in alcohol content, the synthesis rate of carbon nanoparticles is increased, whereas the size of the carbon nanoparticles is decreased. Moreover, the degree of graphitization of the carbon nanoparticles synthesized from 1-hexanol and n-hexane with a high carbon (C)/oxygen (O) ratio and low or no oxygen is observed to be greater than that of the carbon nanoparticles synthesized from the corresponding materials with a low C/O ratio.

• Journal of the Korean Electrochemical Society
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• v.9 no.1
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• pp.1-5
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• 2006

Lithium titanium oxide $(Li_4Ti_5O_{12})$ with spinel-framework structures as anode material for lithium-ion battery was prepared by sol-gel and high energy ball milling (HEBH) method. According to the X-ray diffraction (XRD), Particle Size Analyses(PSA) and scanning electron microscopy (SEM) analysis, uniformly distributed $Li_4Ti_5O_{12}$ particles with grain sizes of 100 nm were observed. Half cells, consisting of $Li_4Ti_5O_{12}$ as working electrode and lithium foil as both counter and reference electrodes showed the high performance of high rate discharge capacity and 173 mAh/g at 0.2C in the range of $1.0\sim2.5 V$. Furthermore, the crystalline structure of $Li_4Ti_5O_{12}$ didn't transform during the lithium intercalation and deintercalation process.

• Journal of the Korean Ceramic Society
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• v.39 no.2
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• pp.204-209
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• 2002

In this study, $UO_4{\cdot}2NH_4F$, the precipitates which has low solubility, was obtained by chemical precipitation method to recover and reuse the trace uranium from the liquid waste producing in AUC process and for this compound it was characterized by means of chemical analysis, TG-DTA, XRD and FT-IR analyses. This compound was analyzed as $UO_4{\cdot}2NH_4F$ and shape of this precipitate was hexagonal type, having the size of 2∼3 ${\mu}m$. Also, the intermediates were obtained as $UO_4F,\;UO_4,\;UO_3,\;and\;U_3O_8$ by the thermal decomposition over the temperature of 220, 310, 515 and 640$^{\circ}C$, respectively. It is concluded that under the condition of a constant heating rate of 5$^{\circ}C$/min in air atmosphere range of between room temperature and 800$^{\circ}C$, thermal decomposition reaction mechanism of $UO_4{\cdot}2NH_4F$ is as follow; $UO_4{\cdot}2NH_4F{\rightarrow}UO_4F{\rightarrow}UO_4{\rightarrow}UO_3{\rightarrow}U_3O_8$.

• Journal of the Korean Ceramic Society
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• v.36 no.2
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• pp.136-144
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• 1999

Crystal structures of tungsten-bronze type microwave dielectric ceramics, $BaOLa_2O_34TiO_2$ (BLT) and $BaO(Nd_{0.77}Y_{0.23})_4TiO_2$ (B(NY)T), were analysed using the Rietveld method. The most relibale refinement was obtained by refining the cation and anion positions from the x-ray and neutron diffraction data, respectively. The ambiguites inherent in the refined crystal structure by Mateeva et al. were resolved. The $BaORe_2O_34TiO_2$ structure consiste of $3\times2$ perovskite blocks and 4 pentagon-channels. The Ti-O6 octahedrons are distroted and tilted, which, consequently, induces the displacements of Ba and Re ions producing the superlattics (c$\approx$ 7.6 $\AA$). The B(NY)T showed more severely tilted Ti-O6 octahedrons. The relative dielectric constant $\varepsilon_{\gamma}$ and temperature coefficient $\tau_\varepsilon$ are 109.5 and-$180 ppm/^{\circ}C$ in BLT, 76 and $+40 ppm/^{\circ}C$ in B(NY)T, respectively. The small Re ions produced a positive $\tau_\varepsilon$. The relation between $\tau_\varepsilon$ and the octahedron tilting in complex perovskite is discussed for the tungsten bronze type structure.

• KIEAE Journal
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• v.17 no.1
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• pp.69-75
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• 2017

Purpose: Heat transfer analysis of recently developed 'slim type double-skin system window' were presented. This window system is designed for curtain wall type façade that main energy loss factor of recent elegant buildings. And the double skin system is the dual window system integrated with inner shading component, enclosed gap space made by two windows when both windows were closed and shading component effectively reflect and terminate solar radiation from outdoor. Usually double-skin system requires much more space than normal window systems but this development has limited by 270mm, facilitated for curtain wall façade buildings. In this study, we estimated thermophysical phenomena of our double-skin curtain wall system window with solar load conditions at the summer season. Method: A fully 3-Dimentional analysis adopted for flow and convective and radiative heat transfer. The commercial CFD package were used to model the surface to surface radiation for opaque solid region of windows' frame, transparent glass, fluid region at inside of double-skin and indoor/outdoor environments. Result: Steep angle of solar incident occur at solar summer conditions. And this steep solar ray cause direct heat absorption from outside of frame surface rather than transmitted through the glass. Moreover, reflection effect of shading unit inside at the double-skin window system was nearly disappeared because of solar incident angle. With this circumstances, double-skin window system effectively cuts the heat transfer from outdoor to indoor due to separation of air space between outdoor and indoor with inner space of double-skin window system.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.15 no.11
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• pp.923-932
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• 2002

A stoichiometric mixture of evaporating materials for CdIn$\_$2/S$\_$4/ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, CdIn$\_$2/S$\_$4/ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by hot wall epitaxy(HWE) system. The source and substrate temperatures were 630 $\^{C}$ and 420 $\^{C}$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction(DCXD). The carrier density and mobility of CdIn$\_$2/S$\_$4/ single crystal thin films measured from Hall effect by van der Pauw method are 9.01$\times$10$\^$16/ cm$\^$-3/ and 219 ㎠/V$.$s at 293 K, respectively. From the optical absorption measurement, the temperature dependence of energy band gap on CdIn$\_$2/S$\_$4/ single crystal thin films was found to be Eg(T) ＝ 2.7116 eV - (7.74 $\times$ 10$\^$-4/ eV) T$\^$2//(T＋434). After the as-grown CdIn$\_$2/S$\_$4/ single crystal thin films was annealed in Cd-, S-, and In-atmospheres, the origin of point defects of CdIn$\_$2/S$\_$4/ single crystal thin films has been investigated by the photoluminescence(PL) at 10 K. The native defects of V$\_$cd/, V$\_$s/, Cd$\_$int/ and S$\_$int/ obtained by PL measurements were classified as donors or accepters type. And we concluded that the heat-treatment in the S-atmosphere converted CdIn$\_$2/S$\_$4/ single crystal thin films to an optical p-type. Also, we confirmed that In in CdIn$\_$2/S$\_$4/GaAs did not from the native defects because In in CdIn$\_$2/S$\_$4/ single crystal thin films existed in the form of stable bonds.

• Journal of the Korean Ceramic Society
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• v.42 no.7 s.278
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• pp.475-482
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• 2005

Zn$_{l-x}$Co$_{x}$O (x = 0.05 - 0.20) films were grown on Coming 7059 glass by sol-gel process. A homogeneous and stable Zn$_{l-x}$Co$_{x}$O sol was prepared by dissolving zinc acetate dihydrate (Zn(CH$_{3}$COO)$_{2}$$\cdot$2H$_{2}$O), cobalt acetate tetrahydrate ((CH$_{3}$)$_{2}$$\cdot$CHOH) and aluminium chloride hexahydrate (AlCl$_{3}$ $\cdot$ 6H$_{2}$O) as solute in solution of isopropanol ((CH$_{3}$)$_{2}$$\cdot$CHOH) and monoethanolamine (MEA:H$_{2}$NCH$_{2}$CH$_{2}$OH). The films grown by spin coating method were postheated in air at 650°C for 1 h and annealed in the condition of vacuum (5 $\times$ 10$^{-6}$ Torr) at 300$^{\circ}C$ for 30 min and investigated the nature of c-axis preferred orientation and physical properties with different Co concentrations. Znl_xCOxO thin films with different Co concentrations were well oriented along the c-axis, but especially a highly c-axis oriented Zn$_{l-x}$Co$_{x}$O thin film was grown at 10 at$\%$ Co concentration. The transmittance spectra showed that Zn$_{l-x}$Co$_{x}$O thin films occur typical d-d transitions and sp-d exchange interaction became activated with increasing Co concentration. The electrical resistivity of the films at 10 at$\%$ Co had the lowest value due to the highest c-axis orientation. X-ray photoelectron spectroscopy and alternating gradient magnetometer analyses indicated that no Co metal cluster was formed, and the ferromagnetic properties appeared, respectively. The characteristics of the electrical resistivity and room temperature ferromagnetism of Zn$_{l-x}$Co$_{x}$O thin films suggested the possibility for the application to dilute magnetic semiconductors.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.10
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• pp.829-838
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• 2007

The stochiometric mix of evaporating materials for the $CdGa_2Se_4$ single crystal thin films was prepared from horizontal furnace. To obtain the single crystal thin films, $CdGa_2Se_4$ mixed crystal was deposited on thoroughly etched semi-insulating GaAs(100) substrate by the Hot Wall Epitaxy (HWE) system. The source and substrate temperature were $630^{\circ}C$ and $420^{\circ}C$, respectively. The crystalline structure of single crystal thin films was investigated by the photoluminescence and double crystal X-ray diffraction (DCXD).The carrier density and mobility of $CdGa_2Se_4$ single crystal thin films measured from Hall effect by van der Pauw method are $8.27{\times}10^{17}\;cm^{-3},\;345\;cm^2/V{\cdot}s$ at 293 K. respectively. The temperature dependence of the energy band gap of the $CdGa_2Se_4$ obtained from the absorption spectra was well described by the Varshni's relation, $Eg(T)\;=\;2.6400\;eV\;-\;(7.721{\times}10^{-4}\;eV/K)T^2/(T+399\;K)$. After the as-grown single crystal $CdGa_2Se_4$ thin films were annealed in Cd-, Se-, and Ga -atmospheres, the origin of point defects of single crystal $CdGa_2Se_4$ thin films has been investigated by PL at 10 K. The native defects of $V_{Cd}$, $V_{Se}$, $Cd_{int}$, and $Se_{int}$ obtained by PL measurements were classified as donors or accepters. We concluded that the heat-treatment in the Cd-atmosphere converted single crystal $CdGa_2Se_4$ thin films to an optical p-type. Also, we confirmed that Ga in $CdGa_2Se_4/GaAs$ did not form the native defects because Ga in single crystal $CdGa_2Se_4$ thin films existed in the form of stable bonds.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.35-36
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• 2008

PTC thermistor are characterized by an increase in the electrical resistance with temperature. The PTC materials of middle Curie point were produced or that of high Curie point (above $200^{\circ}C$), it was determined that compositional modifications of $Pb^{2+}$ for $Ba^{2+}$ produce change sin the Curie point to higher temperature. PTC ceramic materials with the Curie point above $120^{\circ}C$ were prepared by adding $PbTiO_3$, PbO or $Pb_3O_4$ into $BaTiO_3$. Thereby, adding $Pb^{2+}$ into $BaTiO_3$-based PTC material to improve Tc was studied broadly, however, weal know that PbO was poisonous and prone to volatilize, then to pollute the circumstance and hurt to people, so we should dope other innocuous additives instead of lead to increase Tc of composite PTC material. In order to prepare lead-free $BaTiO_3$-based PTC with middle Curie point, the incorporation on $Bi_{1/2}K_{1/2}TiO_3$ into $BaTiO_3$-based ceramics was investigated on samples containing 0, 1, 2, 3, 4, and 50mol% of $Bi_{1/2}K_{1/2}TiO_3$. $Bi_{1/2}K_{1/2}TiO_3$ was compounded as standby material by conventional solid-state reaction technique. The starting materials were $Bi_2O_3$, $K_2CO_3$, $BaCO_3$ and $TiO_2$ powder, and using solid-state reaction method, too. The microstructures of samples were investigated by SEM, DSC, XRD and dielectric properties. Phase composition and lattice parameters were investigated by X-ray diffraction.

• Journal of the Microelectronics and Packaging Society
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• v.21 no.1
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• pp.45-50
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• 2014

Effects of wet chemical treatment and thermal cycle conditions on the quantitative interfacial adhesion energy of $Cu/SiN_x$ thin film interfaces were evaluated by 4-point bending test method. The test samples were cleaned by chemical treatment after Cu chemical-mechanical polishing (CMP). The thermal cycle test between Cu and $SiN_x$ capping layer was experimented at the temperature, -45 to $175^{\circ}C$ for 250 cycles. The measured interfacial adhesion energy increased from 10.57 to $14.87J/m^2$ after surface chemical treatment. After 250 thermal cycles, the interfacial adhesion energy decreased to $5.64J/m^2$ and $7.34J/m^2$ for without chemical treatment and with chemical treatment, respectively. The delaminated interfaces were confirmed as $Cu/SiN_x$ interface by using the scanning electron microscope and energy dispersive spectroscopy. From X-ray photoelectron spectroscopy analysis results, the relative Cu oxide amounts between $SiN_x$ and Cu decreased by chemical treatment and increased after thermal cycle. The thermal stress due to the mismatch of thermal expansion coefficient during thermal cycle seemed to weaken the $Cu/SiN_x$ interface adhesion, which led to increased CuO amounts at Cu film surface.