• Journal of the Korean Ceramic Society
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• v.32 no.8
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• pp.881-892
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• 1995

Sol-Gel derived ferroelectric PZT thin films were fabricated on ITO/Glass substrate. Two kinds of rapid thermal annealing methods, R-I (six times of intermediate and final annealing) and R-II (one final annealing after six times of intermediate annealing) were used for preparation of multi-coated PZT thin films. 2500$\AA$-thick PZT thin films were obtained by the R-I and R-II methods and characterized by microstructure and dielectric properties. In case of using R-II, the microstructure was finer than that of R-I and there was no distinguishable difference in dielectric properties of PZT thin films between the R-I and R-II methods. But dielectric properties were enhanced by increasing perovskite phase fraction with increasing annealing temperature. Measured dielectric constant of PZT thin film annealed at 62$0^{\circ}C$ using the R-I method was 256 at 1kHz. Its remanant polarization (Pr) and coercive field (Ec) were 14.4$\mu$C/$\textrm{cm}^2$ and 64kV/cm, respectively.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.16 no.11
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• pp.1179-1185
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• 1991

Ultrathin Reoxidized Nitrided Oxides were formed by lamp heated rapid thermal annealing in oxyzen at temperatures of $1050^{\circ}C$-$1100^{\circ}C$ for 20, 40 seconds. The electrical characteristics of ultrathin films were evaluated by leakage current breakdown voltage. TDDB. FN tunneling. Nitridation and reoxidition condition dependence of charge trapping properties. i.e.. the flat band voltage shift $({\Delta}V_{FB})$ and the increase of charge-to-breakdown $(Q_{BD})$ induced by a high field stress where studied. As the results of analysis. rapid thermal reoxidation was achieved striking improvement of dielectric integrity, the charge to breakdown was increased and flat band voltage shift was reduced.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.29 no.2
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• pp.95-100
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• 2016

We fabricated a tin sulfide (SnS) layer with Sn/Mo/glass layers followed by a RTP (rapid thermal processing), and studied the film growth and structural characteristics as a function of annealing temperature and time. The elemental sulfur (S) was cracked thermally and applied to form SnS polycrystalline film out of the Sn percursor at pre-determined pressures in the RTP tube. The sulfurization was done at the temperature from $200^{\circ}C$ to $500^{\circ}C$ for a time period of 10 to 40 min. At ${\leq}300^{\circ}C$, 20 min., p-type SnS thin films was grown and showed the best composition of at.% of [S]/[Sn] $${\sim_=}$$ 1 and [111] preferred orientation as investigated from using XRD (X-ray diffraction) analysis and EDS (energy dispersive spectroscopy) and SEM (scanning electron microscopy), and optical absorption by a UV-VIS spectrometer. In this paper, we report the details of growth characteristics of single phase SnS thin film as a function of annealing temperature and time associated with the pressure and ambient gas in the RTP tube.

• JSTS:Journal of Semiconductor Technology and Science
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• v.13 no.3
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• pp.252-258
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• 2013

In this paper, a thermally stable nickel silicide technology using the co-sputtering of nickel and titanium atoms capped with TiN layer is proposed for nano-scale metal oxide semiconductor field effect transistor (MOSFET) applications. The effects of the incorporation of titanium ingredient in the co-sputtered Ni layer are characterized as a function of Ti sputtering power. The difference between the one-step rapid thermal process (RTP) and two-step RTP for the silicidation process has also been studied. It is shown that a certain proportion of titanium incorporation with two-step RTP has the best thermal stability for this structure.

• Journal of the Korean Society for Heat Treatment
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• v.18 no.6
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• pp.362-368
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• 2005

Formation and thermal stability of a quasicrystalline phases in Al-Fe-Mo alloys were investigated by means of melt-spinning process and subsequent heat treatment test. Thermal decomposition and phase transformation process of the as-spun alloys were studied using X-ray diffraction and electron microscopy. The melt-spun Al-Fe-Mo alloys contained an icosahedral quasicrystalline phase with a quasilattice constant of 0.457 nm. Icosahedral phase formed at a composition of $Al_{82.5}Fe_{14}Mo_{3.5}$ as a metastable phase during rapid solidification was transformed into the stable crystalline phases, cubic 1/0 approximant and monoclinic ${\lambda}$-phase, upon heating. A metastable icosahedral and cubic(a = 0.93 nm) phases in as-spun $Al_{65}Fe_{20}Mo_{15}$ alloy were decomposed into two cubic(a = 0.62, 0.31 nm) phases by heat treatment.

• Journal of Powder Materials
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• v.11 no.6 s.47
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• pp.528-534
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• 2004

Using the nano Fe powders having 50 nm in diameter, Fe compact bodies were fabricated by injec-tion molding process. The relationship between microstructure and material properties depending on the volume ratio of powder/binder and sintering temperature were characterized by SEM, TEM techniques. In the compact body with the volume percentage ratio of 45(Fe powder) : 55(binder), which was sintered at $700^{\circ}C,$ the relative density was about $97{\%},$ and the values of volume shrinkage and hardness were about $66.3{\%}$ and 242.0 Hv, respec-tively. Using the composition of 50(Fe powder) : 50(binder) and sintered at $700^{\circ}C,$ the values of relative density, volume shrinkage and hardness of Fe sintered bodies were $73.3{\%},\;47.6{\%}$ and 152.8 Hv, respectively. They showed brittle fracture mode due to the porous and fine microstructure.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2004.04b
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• pp.9-12
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• 2004

This paper investigated the stability of Ta-Mo alloy on thin gate dielectric. Ta-Mo alloy was deposited by using co-sputtering process after thermal growing of 3.4nm and 4.2nm silicon dioxide. When the sputtering power of Ta and Mo were 100W and 70W, respectively, the suitable work function for NMOS gate electrode, 4.2eV, could obtain. To prove interface thermal stability of thin film gate dielectric and Ta-Mo alloy, rapid thermal annealing was performed at $600^{\circ}C$ and $700^{\circ}C$ for 10sec in Ar ambient. The results of interface reaction were surveyed by change of silicon dioxide thickness and work function after annealing process. Also, the reliability of alloy gate and gate dielectric could be confirmed by quantity of leakage current. Ta-Mo alloy was showed low sheet resistance and thermal stability, namely, little change of gate dielectric and work function, after $700^{\circ}C$ annealing process.

• Journal of the Korean Society for Precision Engineering
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• v.15 no.8
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• pp.39-45
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• 1998

In the previous study. the powder casting was attempted as the rapid tooling. The powder casting was the process to cast dry powder into the casting mold transferred from R/P model and infiltrate the liquid binder to solidify the powder. And then, the melted copper was infiltrated to control the shrinkage rate of the final mold Conseqently, the shrinkage rate was under 0.1% through that process. The mechanical characteristic was also excellent. Generally, in the slurry casting, the alumina powder and the water soluble phenol were mainly used. However, the mechanical property of the phenol was not good enough to apply to molds directly. In this study, aluminium powder filled with epoxy is applicated to the slurry casting to solve these problems. The mechanical and thermal properties are better than phenol because the epoxy is the thermosetting resin. We achieved a successful result that the shrinkage rate is shortened about 0.047%. Futhermore, the manufacturing time and cost savings are significant. Finally, we assume that the developing possibility of this process is very optimistic.

• Journal of the Korean Ceramic Society
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• v.56 no.2
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• pp.184-190
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• 2019

To improve resistance in thermal shock of zirconia setter which is frequently and repeatedly exposed to high temperature, high degree of porosity and control of thermal expansion are needed for which the fused CSZ (CaO stabilized zirconia) is used to produce the zirconia setter. In the present study, the effects of sintering temperature, cool down condition, addition of CaO stabilizer, and addition of other additives on phase transition and thermal expansion behavior of the fabrication process of zirconia setter, were examined. The zirconia setter, fabricated with fused CSZ at 1550℃, exhibited 20.4 MPa of flexural strength, 6.8% of absorbance, and 27.9% of apparent porosity. The rapid change in thermal expansion of zirconia setter is observed at temperature around 800℃, and it was reduced by low firing temperature, slowed cooled down, and addition of CaO.

• Proceedings of the Korean Society for Technology of Plasticity Conference
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• 2008.10a
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• pp.439-443
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• 2008

Painting process or coating with acrylic film may improve the surface defects of injection molded parts deteriorated by weldlines. flow marks. and etc. However such processes increase the production costs and increase environmental problems. Recently various types of rapid mold heating & cooling technology have been developed in order to improve surface quality of products. In this study. the heating & cooling performance of a telephone case mold is investigated by heat transfer analysis, in which the rapid mold heating & reeling technology is applied. The surface temperature of the mold was measured using thermal image camera and compared with analysis results. The influence of the rapid mold heating & cooling technology on weldline appearance and cycle time increase was also examined.