• Title/Summary/Keyword: Rapid thermal process

Search Result 452, Processing Time 0.024 seconds

Cylindrical Grinding Integrity - A Review on Surface Integrity

  • Alagumurthi, N.;Palaniradja, K.;Soundararajan, V.
    • International Journal of Precision Engineering and Manufacturing
    • /
    • v.8 no.3
    • /
    • pp.24-44
    • /
    • 2007
  • Cylindrical grinding is one of the important metal cutting processes used extensively in the finishing operation of discrete components. The inherent high cutting temperature in grinding if not controlled may lead to rapid tool wear, which in turn will lead to dimensional inaccuracy. The very nature of the grinding mechanism in material removal impairs the grounded surfaces by inducing residual stress, micro cracks and other thermal damages at the machined surface. This paper is an attempt to review some of the surface integrity issues in cylindrical grinding taken up and reported by number of researchers over the years. This review may have been planned to be useful to the researchers and other professionals interested to work on grinding.

Improvement of Moldability for Ultra Thin-Wall Molding with Micro-Patterns (마이크로 패턴을 가진 초박육 사출성형의 성형성 개선)

  • Yun, Jae-Ho;Park, Keun;Kwon, Oh-Kyung
    • Transactions of the Korean Society of Mechanical Engineers A
    • /
    • v.31 no.5
    • /
    • pp.556-561
    • /
    • 2007
  • The rapid thermal response(RTR) molding is a novel process developed to raise the temperature of mold surface rapidly in the injection stage and then cool rapidly to the ejection temperature by air or water. The objectives of this paper are to investigate the effect of mold temperature, pressure and thickness of micro pattern molding and to provide a optimization of RTR injection molding for micro pattern from Moldflow simulation. Optimal minimum temperature and pressure was found without shortcut according to thickness. Filling percentage was influenced by glass transition temperature with the kinds of resin. Optimal temperature is slightly higher than glass transition temperature irrespectively of pressure, thickness, the kinds of resin in the micro pattern molding.

Formation of an Aluminum Parting Layer in the Fabrication of Field Emitter Arrays Using Reflow Method

  • Kang, Seung-Youl;Jung, Moon-Youn;Cho, Young-Rae;Song, Yoon-Ho;Lee, Sang-Kyun;Kim, Do-Hyung;Lee, Jin-Ho;Cho, Kyoung-Ik
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2000.01a
    • /
    • pp.219-220
    • /
    • 2000
  • We propose a new method for the formation of an aluminum parting layer in the fabrication of field emitter arrays, in which we used a reflow property of aluminum at a lower temperature than the deformation point of glass. After the sputtered aluminum layer on the gate metal was etched for the formation of gate holes, we carried out a rapid thermal annealing process, by which the aluminum slightly diffused into the gate hole. This reflowed aluminum could be used as a parting layer and emitter arrays were easily fabricated using this method.

  • PDF

Fabrication of MILC poly-Si TFT using scanning-RTA and light absorption layer

  • Pyo, Yu-Jin;Kim, Min-Sun;Kim, Young-Soo;Song, Nam-Kyu;Joo, Seung-Ki
    • 한국정보디스플레이학회:학술대회논문집
    • /
    • 2005.07a
    • /
    • pp.307-309
    • /
    • 2005
  • We investigated light absorption layer effect on metal-induced lateral crystallization (MILC) growth rate and MILC thin films transistors (TFTs). As annealing method, we used scanning-rapid thermal annealing (RTA). MILC growth rate which was crystallized by light absorption layer and using scanning-RTA was 3 times than normal MILC which was without light absorption layer growth rate. Also we compared MILC TFTs characteristics which were combined to light absorption layer with conventional MILC TFTs. After scanning-RTA process, MILC-TFTs which were with light absorption layer were superior to conventional MILC-TFTs. With this new MILC-TFTs structure, we could reduced crystallization time and obtain good electrical properties.

  • PDF

The Flow Analysis of Arc in LG Hybrid Interrupter Using PHOENICS Code (PHOENICS Code를 이용한 자력팽창 소호부 내 아크유동해석)

  • Lee, J.C.;Lee, B.W.;Oh, I.S.
    • Proceedings of the KIEE Conference
    • /
    • 2001.04a
    • /
    • pp.44-46
    • /
    • 2001
  • This paper describes the use of the PHOENICS CFD package for the simulation of the high-current period of the arcing process in a hybrid rotating arc/auto expansion by interrupter. The operating principle of this device depends on rapid arc rotation due to the magnetic field created by the fault current through a coil which is mounted on contacts and also relies on the principle of thermal expansion created by arc energy in extinguishing chamber and finally causes pressure rise in expansion volume. This paper is divided into three main sections. The first gives a brief overview of the interrupter. The second section gives a full description of the methods used in the calculation. The final section presents some sample results for the hybrid interrupter.

  • PDF

A Study about the Effects of EGR Stratification on Reducing the Pressure RIse Rate of DME HCCI Combustion (EGR 성층화급기에 의한 DME HCCI 연소시의 압력 상승률 저감에 관한 연구)

  • Lim, Ock-Taeck
    • Transactions of the Korean hydrogen and new energy society
    • /
    • v.22 no.6
    • /
    • pp.895-904
    • /
    • 2011
  • Stratified charge has been thought as one of the ways to avoid a sharp pressure rise on HCCI combustion. The purpose of this study is to evaluate the potential of stratified charge for reducing PRR on HCCI combustion. The pre-mixture with thermal, mixing and EGR stratifications is charged in Rapid Compression Machine. After that, the pre-mixture is compressed and in that process, in-cylinder gas pressure and temperature are analyzed. Additionally numerical calculation with multi-zones modeling is run to know the potential of stratified charge for reducing PRR.

Electrical Properties of Annealed $WSi_{x}$ Films Deposited on P+ Polysilicon by LPCVD (P+ Polysilicon층 위에 저압화학증착된 $WSi_{x}$ 박막의 열처리에 따른 전기적 특성)

  • 이희승;임호빈;이종무
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
    • /
    • 1990.10a
    • /
    • pp.81-85
    • /
    • 1990
  • $WSi_{x}$ film deposited on p+ polysilicon by low pressure chemical vapor deposition method were annealed by rapid thermal process, their properties have been investigated by measurements of electrical resistivity and Hall voltage and by analyses of phases and microstructure using X-ray diffraction and SEM technique. The electrical resistivity of the polycides consisting of the tungsten silicide and the p+ polysilicon decreases with the increase in annealing temperature due probably to the increase in grain size. unlike the polycides consisting of the $WSi_{x}$ and n+ polysilicon, however, the Hall voltage of the polycides consisting of $WSi_{x}$ and p+ polysilicon were positive for all specimens annealed as well as the as-deposited one, indicating the majority carrier in $WSi_{x}$. is hole and is independent of the annealing.

A Study on the Prediction Modeling of Phase Transformation in the CGHAZ of Structural Steel Weld (구조용강 용접부 CGHAZ의 상변태 예측 Modeling에 관한 연구)

  • 조일영;이경종;이창희
    • Journal of Welding and Joining
    • /
    • v.16 no.3
    • /
    • pp.74-84
    • /
    • 1998
  • The microstructures of the HAZ (Heat Affected Zone) are generally different from the base metal due to rapid thermal cycle during welding process. Particuraly, CGHAZ (Coarsened Grain Heat Affected Zone) near the fusion line is the most concerned region in which many metallurgical and mechanical discontinuities have been normally generated. A computer program by the numerical formularization of phase transformation during cooling with different rates was developed to generate the CCT diagram, and to predict microstructural (phase) changes in the CGHAZ. In order to verify simulated results, isothermal and continuous cooling transformation experiments were conducted. The simulated and experimental results showed that the developed computer model could successfully predict the room temperature microstructural changes (changes in volume fraction of phases) under various welding conditions (heat input & cooling rate $(Δt_{8/5})$).

  • PDF

Experiments on the Heat Transfer and Pressure Drop Characteristics of a Channel with Pin-Fin Array (핀-휜을 삽입한 채널의 열전달 및 압력강하 특성 실험)

  • 신지영;손영석;김상민;이대영
    • Korean Journal of Air-Conditioning and Refrigeration Engineering
    • /
    • v.16 no.7
    • /
    • pp.623-629
    • /
    • 2004
  • Rapid development of electronic technology requires small size, high density packaging and high power of electronic devices, which result in more heat generation by the electronic system. Present cooling technology may not be adequate for the thermal management in the current state-of-the-art electronic equipment. Forced convective heat transfer in a channel filled with pin-fin array is studied experimentally in this paper as an alternative cool-ing scheme for a high heat-dissipating equipment. Various configurations of the pin-fin array are selected in order to find out the effect of spacing and diameter of the pin-fin on the heat transfer and pressure drop characteristics. In the low porosity region, interfacial heat transfer and pressure drop seem to show different trend compared to the conventional heat transfer process.

EFFECTS OF Si, Ge PRE-IMPLANT INDUCED DEFECTS ON ELECTRICAL PROPERTIES OF P+-N JUNCTIONS DURING RAPID THERMAL ANNEALING

  • Kim. K.I.;Kwon, Y.K.;Cho, W.J.;Kuwano, H.
    • Journal of the Korean Vacuum Society
    • /
    • v.4 no.S2
    • /
    • pp.90-94
    • /
    • 1995
  • Defects introduced by Si, Ge preamorphization and their effects on the dopant diffusion and electrical characteristics. Good crystalline quality are obtained after the annealing of Ge ion double implanted samples. The defect clusters under the a/c interface are expected to extend up to the deep in the Si ion implanted samples. The dislocation loops near the junction absorb the interstitial Si atoms resolving from the defect cluster and result in the prevention of enhanced boron diffusion near the tail region of boron profile and show good reverse current charactristics.

  • PDF