• Title/Summary/Keyword: Range dependence

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Composition Dependence and Optical Properties of Polymethyl Methacrylate/Alumina Nanocomposite in the IR Region Determined by Kramers-Kronig Relation

  • Ghamari, Misagh;Ghasemifard, Mahdi
    • Journal of the Korean Ceramic Society
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    • v.54 no.2
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    • pp.102-107
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    • 2017
  • The dependence of the IR optical properties of PMMA/$Al_2O_3$ nanocomposite on the alumina content was investigated in the wavelength range of $3500-2800cm^{-1}$. The samples were prepared via emulsion polymerization technique using oleic acid as a coupling agent. Grafting density calculations were carried out by means of elemental analysis CHN to yield the best coupling agent content. FTIR analysis confirmed the existence of a chemical bond between aluminum oxide and oleic acid. The outcomes of XRD analyses showed the presence of cubic gamma aluminum oxide in the nanocomposite, in contrast to the amorphous nature of PMMA. TEM images showed the core-shell morphology of the particles other than pristine PMMA. Optical constants of the nanocomposite were calculated based on FTIR spectra and the Kramers-Kronig equations. The presence of nano alumina modified some of the optical indexes in IR region.

A Study on Temperature Compensation of Silicon Piezoresistive Pressure Sensor (실리콘 저항형 압력센서의 온도 보상에 관한 연구)

  • 최시영;박상준;김우정;정광화;김국진
    • Journal of the Korean Institute of Telematics and Electronics
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    • v.27 no.4
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    • pp.563-570
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    • 1990
  • A silicon pressure sensor made of a full bridge of diffused resistors was designed and fabricated using semiconductor integrated circuit process. Thin diaphragms with 30\ulcorner thickness were obtained using anisotropic wet chemical etching technique. Our device showed strong temperature dependence. Compensation networks are used to compensate for the temperature dependence of the pressure sensor. The bridge supply voltage having positive temperature coefficient by compensation networks was utilized against the negative temperature coefficient of bridge output voltage. The sensitivity fluctuation of pressure sensor before temperature compensation was -1700 ppm/\ulcorner, while it reduced to -710ppm\ulcorner with temperature compensation. Our result shows that the we could develop accurate and reliable pressure sensor over a wide temperature range(-20\ulcorner~50\ulcorner).

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Studies on the Zr-Pyrithione Complex (지르코늄-피리치온 착물에 관한 연구)

  • Kwon, Chung-Moo;Rhee, Gye-Ju
    • Journal of Pharmaceutical Investigation
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    • v.20 no.3
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    • pp.145-152
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    • 1990
  • Zirconium pyrithione complex was prepared by reaction of sodium-pyrithione solution and zirconyl chloride solution. The physico-chemical properties of the complex was examined by means of IR, XRD, DSC and NMR. And the stability of Zr-complex was investigated on the basis of accelerated stability analysis under conditions of temp. elevation, UV radiation and pH dependence. The result indicates that the ratio of the ligand to metal in Zr-pyrithione complex was determined 4:1, and its stability constant was $4.643{\times}10^4$. The rate order of decomposition of the complex was apparent first-order reaction of which rate constant and the decomposition rate was not only accelerated by effect of heat and UV radiation but was catalyzed by specific acid-base catalysis considered the pH dependence for the hydrolysis of the complex and the suspension was most stable over the range pH 4-8 indicating that solvent catalysis is the primary made of reaction in this region.

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DEPENDENCE OF THE SENSITIVITY TO PLANETS ON THE PROPERTIES OF HIGH-MAGNIFICATION GRAVITATIONAL MICROLENSING EVENTS

  • Han, Cheong-Ho
    • Journal of The Korean Astronomical Society
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    • v.44 no.4
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    • pp.109-113
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    • 2011
  • In current microlensing planet searches that are being carried out in a survey/follow-up mode, the most important targets for follow-up observations are lensing events with high magnifications resulting from the very close approach of background source stars to the lens. In this paper, we investigate the dependence of the sensitivity to planets on detailed properties of high-magnification events. From this, it is found that the sensitivity does not monotonically increase as the impact parameter between the lens and the source trajectory decreases. Instead, it is roughly the same for events with impact parameters less than a certain threshold value. It is also found that events involving main-sequence source stars are sensitive to planets in a much wider range of separation and mass ratio, than those events involved with giant source stars. Based on these results, we propose observational strategies for maximal planet detections considering the types of telescopes available for follow-up observations.

Vapor deposition of silicon nitride film on silicon and its electrical properties (실리콘질화막의 기상성장과 그 전기적 특성)

  • 성영권;민남기;김승배
    • 전기의세계
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    • v.28 no.9
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    • pp.43-50
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    • 1979
  • Silicon nitride films were chemically deposited on silicon substrates by reacting SiCl$_{4}$ and NH$_{3}$ in a nitrogen atmosphere at 700~1100 .deg.C. The deposition rate increased rapidly with deposition temperature upto about 1000 .deg.C, and became less temperature dependent above this temperature. The etch rate of films in buffered HF solution decreased, with an increase of deposition temperature, and a heat treatment at a temperature higher than that of the deposition considerably reduced the etch rate. It indicates that the heat treatment resulted in a densification of the films. Surface charge density of 3~4 * 10$^{11}$ /cm$^{2}$ was determined from the C-V characteristics of MNS diode, and it was also found that surface charge density depended on deposition temperature, but not film thickness. The current-voltage characteristics displayed a logI-V$^{1}$2/ dependence in the temperature range of 300~500.deg.K. Measurement of the slope of this characteristics and its dependence on temperature and bias polarity suggest that conduction in sili con nitride films arises from the Poole-Frenkel mechanism.

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Precise High Voltage Measurement System Using Ceramic Stack Element for Voltage Divider (분압용 세라믹 적층 소자를 이용하 정밀 고전압 계측 시스템)

  • 윤광희;류주현;박창엽;정영호;하복남
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.13 no.5
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    • pp.396-401
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    • 2000
  • In order to accurately measure the high voltage of 22.9[kV] power distribution lines we investigated the temperature dependence of measuring voltage on the number of stack layers in the voltage measurement system made from single and stack voltage divider capacitors (22, 44, 66 layers, respectively). Temperature coefficient of dielectric constant(TC$\varepsilon_{{\gamma}}$/)of voltage divider capacitors which were fabricated by BaTi $O_3$system ceramics showed the variations from -2.28% to +1.69% in the range of -25[$^{\circ}C$] ~50[$^{\circ}C$]) was decreased with increasing of stack number and the stack element of 66 layers showed the least error of $\pm$0.87%or of $\pm$0.87%.

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Thickness dependence of the piezoelectric characteristic for PZT films using by rf magnetron sputtering (RF 마그네트론 스퍼터링으로 증착한 두께에 따른 PZT 박막의 강유전 특성에 관한 연구)

  • Lee, Tae-Yong;Park, Young;Song, Joon-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2003.11a
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    • pp.313-316
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    • 2003
  • The lead zirconate titanate, $Pb(Zr_{0:52}Ti_{0:48})O_3$, films of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$ thickness were fabricated on $Pt/Ti/SiO_2/Si$ substrate by the rf magnetron sputtering method. The PZT films were annealed using by a rapid thermal annealing (RTA) method. The thickness dependence of the film structure, dielectric properties, Polarization-electric field hysteresis loops and capacitance-voltage characteristics were investigated over the thickness range of $0.5\;{\mu}m,\;1\;{\mu}m$ and $2\;{\mu}m$. According to the XRD patterns of the films, (110) peak intensity increases with film thickness increased. The increase of PZT films thickness leads to the decrease of the remanent polarization and the dielectric constant.

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Twisted Intramoecular Charge-Transfer Behavior of a Pre-Twisted Molecule, 4-Biphenylcarboxylate Bonded to Poly(Methyl Methacrylate)

  • 강성관;안교덕;조대원;윤민중
    • Bulletin of the Korean Chemical Society
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    • v.16 no.10
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    • pp.972-976
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    • 1995
  • A trace amount of 4-biphenylcarboxylate having a pre-twisted biphenyl moiety was attached to a poly(methyl methacrylate) side chain and the fluorescence properties of the chromophore were investigated in various solvents such as ethyl acetate and butyl chloride. At room temperature, the polymer exhibited a distinct red shift of the short wavelength emission (325 nm) and an enhanced emission intensity around 430 nm upon excitation at the absorption red edge. The temperature dependence of the intensity ratio (R) of the 325 nm emission to the 430 nm emission was observed when exciting at the red edge over the temperature range between -20 and 60 ℃. However, the temperature dependence was not observed when exciting at the shorter wavelength. The Arrhenius plot of the R value shows the activation energy of 6.0 kJ/mol which is in good agreement with the energy required for the twist of the biphenyl moiety. Together with the results of red edge excitation effects it was concluded that the pre-twisted geometry of the biphenyl moiety is preserved by the restriction of the polymer chain to facilitate the formation of the twisted intramolecular charge transfer (TICT) state upon excitation.

$^{1}H$ Nuclear Magnetic Relaxation in Impure $CuF_{2}.2H_{2}O$ (비자성 불순물을 갖는 $CuF_{2}.2H_{2}O$의 수소 핵자기완화 연구)

  • C. H. Lee;C. E. Lee;S. J. Noh
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.854-857
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    • 1995
  • We have studied the temperature dependence of the $^{1}H$ NMR spin-lattice relaxation for the impure $CuF_{2}.2H_{2}O$ over a temperature range from 77 K to room temperature. We find that the remperature dependence of the $^{1}H$ spin-lattice relaxation is dominated by the eletron spin-flip and the Raman process of eletron spin-lattice relaxation. The electron spin-flip exchange energy was calculated to be $1.8(\pm0.04)$ K.

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COERCIVE FIELD AND SPIN-GLASS BEHAVIOR OF AMORPHOUS Y-Fe ALLOYS

  • Fujita, A.;Fukamichi, K.
    • Journal of the Korean Magnetics Society
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    • v.5 no.5
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    • pp.762-766
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    • 1995
  • The coercive field $H_{c}$ of amorphous Y-Fe alloys in the spin-glass state has been investigated. Foramorphous $Y_{10}Fe_{90}$ alloy, the thermal variations of $H_{c}$ in the maximum external field $H_{max}=300,\;600$ and 1 k Oe exhibit a maximum. Since spin-glass behavior is strongly affected by external magnetic fields, the maximum point moves to lower temperature with increasing $H_{max}$. The appearance of the maximum in $H_{c}$ has been discussed in terms of the change of the spin-glass state in the external magnetic field. When the value of $H_{max}$ is 55 kOe, the temperature dependence of $H_{c}$ has no maximum and shows an exponential decrease with increasing temperature. Similar trends have been observed over a wide concentration range. The concentration dependence of $H_{c}$ is associated with the magnetic phase diagram.

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