• Bulletin of the Korean Chemical Society
• /
• v.34 no.12
• /
• pp.3800-3804
• /
• 2013

In this study, molecular dynamics simulations of SPC/E (extended simple point charge) model have been carried out in the canonical NVT ensemble over the range of temperatures 300 to 550 K with and without Ewald summation. The quaternion method was used for the rotational motion of the rigid water molecule. Radial distribution functions $g_{OO}(r)$, $g_{OH}(r)$, and $g_{HH}(r)$ and self-diffusion coefficients D for SPC/E water were determined at 300-550 K and compared to experimental data. The temperature dependence on the structural and diffusion properties of SPC/E water was discussed.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2006.08a
• /
• pp.671-674
• /
• 2006

Due to the stricter requests of the human perception of images, many industrial standards such as TCO'03 have been made to survey the Flat Panel Displays (FPD) nowadays. The angular-dependence luminance uniformity is an important item to evaluate the performance of FPD. In this article, we focus on the above test item base on TCO'03 standard in the case of vertical direction of ${\pm}15^{\circ}$. With controlling the driving voltage toward the liquid crystals of TN-type TFT-LCD, there exists a voltage-driving range which can achieve the value of the $L_{max}/L_{min}$ at ${\pm}15^{\circ}\;{\leq}1.7$ readily. Both experiment and simulation have been well analysis.

• Proceedings of the KIEE Conference
• /
• 1989.07a
• /
• pp.380-382
• /
• 1989

Dielectric breakdown strength (Eb) of thin Poly(Vinylidene Fluoride ; PVDF) film is studied in the temperature range between 4.2 K and 400 K. The results of this study can be summerized as follows. 1) Temperature dependence of dielectric breakdown strength (Eb) can be devided into high and low temperature regions. The critical temperature (Tc) at which two regions are devided depends on applied voltage. 2) Dielectric breakdown strength (Eb) by pulse voltage is higher than that by DC voltage. Especially this difference is remarkable at low temperature.

• Electrical & Electronic Materials
• /
• v.7 no.2
• /
• pp.107-116
• /
• 1994

In the manufacturing of VLSI circuits, variations of device characteristics due to the slight differences in process parameters drastically aggravate the performances of fabricated devices. Therefore, it is very important to establish optimal process conditions in order to minimize deviations of device characteristics. In this paper, we used one-dimensional process simulator, SUPREM-II, and two dimensional device simulator, MINIMOS 4.0 in order to extract optimal process parameter which can minimize changes of the device characteristics caused by process parameter variation in the case of short channel nMOSFET and pMOSFET device. From this simulation, we have derived the dependence relations between process parameters and device characteristics. Here, we have suggested a method to extract process parameters from design trend curve(DTC) obtained by these dependence relations. And we have discussed short channel effects and device limitations by scaling down MOSFET dimensions.

• KSII Transactions on Internet and Information Systems (TIIS)
• /
• v.10 no.3
• /
• pp.1344-1361
• /
• 2016

ICT contents market is globally considered as an industry of high added value, where sustainability is accomplished through stories that cover wide range of consumers. However, the need for long-term internationalization strategy is growing as countless number of applications and games has pushed the local market to its limit. Thus, this research explored on the industrial characteristics and the internationalization of ICT contents firms through acquisition of competency. Based on Resource Dependence theory, the authors studied how pursuit of legitimacy and autonomy functioned in the expansion process of ICT contents firms. A survey analysis of 212 key decision makers of Korean ICT content firms were performed, to reveal that resource environment and interdependence must undergo a thorough consideration.

• 한국초전도학회:학술대회논문집
• /
• v.10
• /
• pp.121-124
• /
• 2000

The time dependence of irreversible magnetization of grain aligned infinite layer superconductor Sr$_{0.9}$La$_{0.1}$CuO$_2$ was measured in temperature range of 2 K < T < 30 K for H= 0.5 T, 1.0 T and 1.5 T parallel to c-axis. From this, we calculated normalized flux creep rate S(T) ${\equiv}$ dlnM/dlnt and found that the temperature independent region in S(T) is significantly wide in comparision with other cuprate superconductors. Using the method of Maley et al., we also deduce the current density dependence of pinning potential and glassy exponent ${\mu}$.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1999.07a
• /
• pp.173-173
• /
• 1999

The initial growth mode of Nb on Ag(110) in sub-monolayer region is studied using Scanning Tunneling microscopy. E-beam evaporated Nb is deposited onto the substrate at RT, and STM measurements are carried out at RT and 78K. With Nb being immiscible in bulk Ag, 3D islands formation begins at early stage and no particular ordered structure is found. At very low coverages, however, many interesting phenomena are observed in association with Nb clusters. Small Nb clusters as deposited displays very strong size dependence against atom-manipulation by the STM tip. In addition, the apparent corrugation of clusters below the critical size exhibits dramatic dependence on the imaging bias, disappearing completely over a wide range of the bias. Possible physical mechanism responsible for such behavior will be discussed.

• Journal of Korea Foundry Society
• /
• v.4 no.4
• /
• pp.14-19
• /
• 1984

In order to clarify the solidification mechanism of Al-Si alloy, Mushy Degree of Eutectic Solidification (MDE) and Centerline Feeding Resistance (CFR) were systematically studied by casting with various compositions of $Al-(6{\sim}18%)$ Si alloys into several kinds of molds having different cooling rates. The results are as follows: 1. CFR% increases slightly as solute concentration increases, but decreases remarkably as the cooling rate of the mold increases, that is, the composition dependence of the alloys has more effect on the change of CFR% than that of the mold cooling rate. 2. The composition dependence of MDE value has the same tendency as that of Degree of Eutectic Solidification (DES). MDE value within the range of hypereutectic composition is larger than that of hypoeutectic and it represents the maximum value at eutectic composition. The higher the cooling rate is, the less the MDE value is.

• Progress in Superconductivity
• /
• v.3 no.2
• /
• pp.146-150
• /
• 2002

We performed the point contact spectroscopy on newly discovered superconductor $MgB_2$ thin films with Au tip. In the point contact spectroscopy of the metallic Sharvin limit, the differential conductance below the gap is twice as that above the gap by virtue of Andreev Reflection. After some surface cleaning processes of sample preparation such as ion-milling and wet etching, the obtained dI/dV versus voltage curves are relatively well fitted to the Blonder-Tinkham-Klapwijk (BTK) formalism. Gaps determined by this technique were distributed in the range of 3meV~ 8meV with the BCS value of 5.9meV in the weak coupling limit. We attribute these discrepancies to the symmetry of the gap parameter and the degradation of the surface of the sample. We also present the temperature dependence of the conductance vs voltage curve and thereby the temperature dependence of the gap.

• 한국정보디스플레이학회:학술대회논문집
• /
• 2005.07a
• /
• pp.714-716
• /
• 2005

We studied the dependence of the electrical characteristics of MgO protecting layer on temperature in an AC PDP cell. Careful measurements of the surface resistance of MgO were performed for the temperature range from room temperature to $100^{\circ}C$ with and without the VUV illumination. Experimental results show that the resistivity is affected by not only the temperature but also VUV irradiation. The measurement of wall charge distribution and the address discharge delay time as to the temperature show that the resistivity change of MgO may affect the wall voltage and consequently the discharge delay time.