• Bulletin of the Korean Chemical Society
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• 제32권spc8호
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• pp.2941-2948
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• 2011

A nanogap formed by a metal nanoparticle and a flat metal substrate is one kind of "hot site" for surface-enhanced Raman scattering (SERS). The characteristics of a typical nanogap formed by a planar Au and either an Au and Ag nanoparticle have been well studied using 4-aminobenzenethiol (4-ABT) as a probe. 4-ABT is, however, an unusual molecule in the sense that its SERS spectral feature is dependent not only on the kinds of SERS substrates but also on the measurement conditions; thus further characterization is required using other adsorbate molecules such as 1,4-phenylenediisocyanide (1,4-PDI). In fact, no Raman signal was observable when 1,4-PDI was selfassembled on a flat Au substrate, but a distinct spectrum was obtained when 60 nm-sized Au or Ag nanoparticles were adsorbed on the pendent -NC groups of 1,4-PDI. This is definitely due to the electromagnetic coupling between the localized surface plasmon of Au or Ag nanoparticle with the surface plasmon polariton of the planar Au substrate, allowing an intense electric field to be induced in the gap between them. A higher Raman signal was observed when Ag nanoparticles were attached to 1,4-PDI, irrespective of the excitation wavelength, and especially the highest Raman signal was measured at the 632.8 nm excitation (with the enhancement factor on the order of ${\sim}10^3$), followed by the excitation at 568 and 514.5 nm, in agreement with the finite-difference timedomain calculation. From a separate potential-dependent SERS study, the voltage applied to the planar Au appeared to be transmitted without loss to the Au or Ag nanoparticles, and from the study of the effect of volatile organics, the voltage transmission from Au or Ag nanoparticles to the planar Au also appeared as equally probable to that from the planar Au to the Au or Ag nanoparticles in a nanogap electrode. The response of the Au-Ag nanogap to the external stimuli was, however, not the same as that of the Au-Au nanogap.

• 한국수소및신에너지학회논문집
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• 제16권1호
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• pp.9-16
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• 2005

We studied the electrochromic properties of hydrated amorphous ruthenium oxide ($RuO_2{\cdot}xH_2O$) thin films using in-situ Raman spectroscopy during electrochemical charging/discharging cycles. We have found that the principal effect of hydrogen insertion into $RuO_2{\cdot}xH_2O$ is reduction of $Ru^{4+}\;to\;Ru^{3+}$, and not formation of new bonds involving hydrogen. We compared the changes in the Raman spectrum of a gasochromic $Pd/RuO_2{\cdot}xH_2O$ film as it is exposed to hydrogen gas with that of electrochemical hydrogen insertion. We tested the changes in the optical transmission of the $Pd/RuO_2{\cdot}xH_2O$ film when exposed to hydrogen gas.

• 대한화학회지
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• 제28권1호
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• pp.34-40
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• 1984

라만 분광법을 사용하여 순수한 액체 상태의 $C_6F_6$의 재배치 운동을 연구하였다. 라만 스펙트럼 중 ${\nu}_2$와 ${\nu}_16$ 밴드를 선정하여 그 모습을 293~333K온도 범위에서 측정하였다. 분자의 주대칭축($C_{6-}$축)의 회전 및 스핀운동에 관한 회전 확산 상수 ($D_{\bo}$, $D_{\parallel}$)가 온도의 함수로써 결정되었으며 이로부터 $C-6F_6$의 재배치운동은 명백히 비등방적임을 알게 되었다. 실험 결과를 유체역학적 모델로 분석하여 본 결과 주대칭축의 회전운동은 확산적이며 스핀운동은 관성적이라는 것이 밝혀졌다.

• 한국재료학회지
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• 제4권4호
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• pp.385-392
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• 1994

Microwave플라즈마 화학 증착법으로 다이아몬드 박막을 증착하여 morphology변화를 관찰하였다. 기판 온도가 $550^{\circ}C$에서 $750^{\circ}C$로 증가함에 따라 다이아몬드 박막의 표면 morpholoty는 {111}에서 {100}, cauliflower형태로 변화하는 것과 함께, 증착층내의 nondiamond성분이 증가하는 것을 발견하였다. 증착 층 내에 존재하는 nondiamond성분은 다이아몬드 입자의 입계에 분포하고 있음을 마이크로 Raman분석으로부터 추측할 수 있었다. 증착층의 texture orientation 을 X-선 회절 분석기로 확인한 결과, $550^{\circ}C$에서는 증착층의 texture orientation이 관찰되지 않았지만 온도가 증가함에 따라 <100>에서 <110>으로 변화하는 것을 관찰할 수 있었다.

• 한국재료학회지
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• 제19권10호
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

• Asian Pacific Journal of Cancer Prevention
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• 제13권8호
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• pp.3705-3708
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• 2012

Effects of Cantharidinate on apoptosis of human colorectal cancer UTC-116 cells were investigated by means of 3-(4, 5-dimethylthiazol-2-yl)-2, 5-diphenyltetrazolium bromide (MTT) assay, H and E staining, flow cytometry, and Raman Spectra analysis. The results showed Cantharidinate to exert inhibitory action on proliferation of human colorectal cancer UTC-116 cells, inducing apoptosis, arresting cells in G1 phase, with decline of S and G2 phases. In addition, the results of Raman spectrum showed significant changes in the UTC-116 cells chemical structure with stretching after the application of Cantharidinate. Taken together, these results suggest that the treatment of human colorectal cancer with Cantharidinate may be associated with multiple molecular mechanisms for apoptosis. Furthermore, similar to fluorouracil, Cantharidinate should be considered as novel assistant drug for controlling the growth of human colorectal cancer UTC-116 cells.

• 대한화학회지
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• 제26권4호
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• pp.205-209
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• 1982

순수 액체상태의 $CDCl_3$의 비등방성 회전운동을 라만 스펙트럼의 ${\nu}_1$- band를 분석하여 조사하였다. 이로부터 분자의 $C_3$-대칭축에 수직한 축 주위로의 회전운동에 관계되는 확산상수($D_{II}$)는 위에서 얻은 $D_{\perp}$와$^35C$l의 NQR이완시간으로 부터 구하였다. 이렇게 구한 확산상수들은 $^2H$와 $^35C$l의 NQR 이완시간으로 부터 구한 값들과 실험오차 범위내에서 잘 일치하였다. 또한 두 확산상수들의 값들로부터 순수한 CDC$l_3$의 재배치 운동이 상당히 비등방적인 것을 알게 되었다.

• 한국세라믹학회지
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• 제42권5호
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• pp.359-365
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• 2005

Silicon nitride coating films with various ratios of nitrogen to silicon contents were prepared and characterized. The film was coated on silicon substrate by sputtering method with changing nitrogen gas flow rate in a chamber. The nitrogen to silicon ratio was found to have values in a range from 0 to 1.4. Coated film was characterized with scanning electron microscopy, transmission electron microscopy, electron probe microanalysis, nanoindentation scanning probe microscopy, x-ray photon spectrometry, and Raman spectrometry. Silicon nitride phase in all samples showed amorphous nature regardless of N/Si ratio. When N/Si ratio was 1.25, hardness and elastic modulus of silicon nitride film showed maximum with 22 GPa and 210 GPa, respectively. Those values decreased, when N/Si ratio was higher than 1.25. Raman spectrum showed that no silicon phase exist in the film. XPS result showed that the silicon-nitrogen bond was dominant way for atomic bonding in the film. The structure and property was explained with Random Bonding Model(RBM) which was consistent with the microstructure and chemistry analysis for the coating films.

• 대한화학회지
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• 제53권5호
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• pp.505-511
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• 2009

본 논문에서는 구조가 간단하고 생체분야에 응용 가능한 valine, alanine등의 아미노산 분자를 이용하여 수용성 ZnS 나노입자를 합성하였다. 얻어진 고체 생성물들은 XRD, HR-TEM, 및 EDXS분석으로 그 특성을 조사하였다. HR-TEM image 분석의 결과 크기가 대략 3.3에서 3.6 nm 의 입자들이 만들어 졌음을 확인 할 수 있었으며, 나노 입자 표면의 아미노산 분자들은 FT-IR 과 FT-Raman spectrum 을 얻어 결합 모드 등을 분석하였다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2000년도 하계학술대회 논문집 C
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• pp.1720-1723
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• 2000

Boron doped conducting diamond thin film were grown on Si substrate by microwave plasma chemical vapor deposition from a gaseous feed of hydrogen, acetone/methanol and solid boron. The doping level of boron was controlled from 0ppm to $10^4$ppm (B/C). The Si substrate was tilted ca. 10$^{\circ}$ to make Si substrate have different height and temperature. Experimental results show that same condition but different temperature of Si substrate by height made different crystalline of diamond thin film. There were appeared 3$\sim$4 step of different crystalline morphology of diamond. To characterize the boron-doped diamond thin film, Raman spectroscopy was used for identification of crystallinity. To survey surface morphology, microscope was used. Grain size was changed gradually by different temperature due to different height. The Raman spectrum of film exhibited a sharp peak at 1334$cm^{-1}$, which is characteristic of crystalline diamond. The lower position of diamond film position, the more non-diamond component peak appeared near 1550$cm^{-1}$.