• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

• Bulletin of the Korean Chemical Society
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• 제30권4호
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• pp.803-809
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• 2009

Notable blue shifts of the ν2 $C{\equiv}N$ stretching, $_{v4}$ C-C stretching and $_{v8}$ CCN deformation bands of $CD_3CN$ are observed upon solvation of $InCl_3$, resulting from the donor-acceptor interaction. The Raman spectrum in the $_{v2}$ region shows further details; at least two new bands emerge on the blue side of the $_{v2}$ band of free $CD_3CN$, whose relative intensities vary with concentration, suggesting that there exist at least two different cationic species in the solution. The strong hydrogen bonds formed between the methyl group and ${InCl_4}^-$ result in a large band appearing on the red side of the ν1 $CD_3$ symmetric stretching band. The solvation number of $InCl_3$, determined from the Raman intensities of the $C{\equiv}N$ stretching bands for free and coordinated $CD_3CN$, increases from $\sim$1.5 to $\sim$1.8 with decreasing concentration.

• 한국표면공학회지
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• 제42권4호
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• pp.173-178
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• 2009

DLC film was synthesized on plastic injection mold(SKD11, $30\;mm\;{\times}\;19\;mm\;{\times}\;0.5\;mm$) and Si(100) wafer for 2 h at $130^{\circ}C$ under 6 mTorr using hybrid method of rf sputtering and ion source. The obtained film was analysed by Raman spectroscopy, AFM, TEM, Nano indenter and scratch tester, etc. The film was defined as an amorphous phase. In the Raman spectrum, broad peak of $sp^2$-bonded carbon attributed to graphite at $1550\;cm^{-1}$ were observed, and the ratio of ID($sp^3$ diamond intensity)/IG($sp^2$ graphite intensity) was approximately 0.54. The adhesion of DLC film was more than 80 N with scratch tester when $0.2\;{\mu}m$ thickness Cr was coated as interlayer. The micro-hardness was distributed at 35~37 GPa. The friction coefficient was 0.02~0.07, and surface roughness(Ra) was 0.34~1.64 nm. The lifetime of DLC coated plastic injection mold using as a connector part in computer was more than 2 times of non-coated mold.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제50권2호
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• pp.49-56
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• 2001

Diamond thin films have been deposited on the silicon substrate by inductively coupled radio frequency plasma enhanced chemical vapor deposition system. The morphological features of thin films depending on methane concentration and deposition time have been studied by scanning electron microscopy and Raman spectroscopy. The diamond particles deposited uniformly on silicon substrate($10{\times}10[mm^2]$) at the pressure of 1[torr], a methane concentration of 1[%], a hydrogen flow rate of 60[sccm], a substrate temperature of $840\{sim}870[^{\circ}C]$, an input power of 1[kw], and a deposition time of 1[hour]. With increasing deposition time, the diamond particles grew, and than about 3 hours have passed, the graphitic phase carbon thin film with "cauliflower-like" morphology deposited on the diamond thin films.

• E2M - 전기 전자와 첨단 소재
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• 제9권5호
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• pp.470-475
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• 1996

Fiber-textured diamond films have been deposited on scratched silicon(100) substrate by micro wave .plasma enhanced chemical vapor deposition at the condition of micro wave power : 950 W, pressure : 60 torr, H$_{2}$ gas flow rate : 50 sccm, CH$_{4}$ gas flow rate : 1.5 sccm, substrate temperature : about 900.deg. C and deposition time : 20 hours. The films were characterized by mean of scanning electron microscopy, Raman spectroscopy and X-ray analysis.

• Bulletin of the Korean Chemical Society
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• 제29권1호
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• pp.69-75
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• 2008

Tautomerism of pyrimidine base cytosine has been comparatively examined on nanoparticle and roughened plate surfaces of silver, gold, and copper by surface-enhanced Raman scattering (SERS). The SERS spectrum was found to be different depending on the metals and their substrate conditions suggesting the dissimilar population of various tautomers of cytosine on the surfaces. The ab initio calculations were performed at the levels of B3LYP, HF, and MP2 levels of theory with the LanL2DZ basis set to estimate the energetic stability of the tautomers with the metal complexes as well as the gas phase state. The amino group and N3-coordinated tautomer was predicted to be more favorable for bonding to Au, whereas the hydroxyl and N1-coordinated zwitter ionic form is most stable with Ag and Cu as a bidentate form from the DFT calculation. The binding energy with the Ag atom is calculated to be smaller than those with the Au and Cu atoms in line with the temperature-dependent SERS spectra of cytosine.

• 한국안광학회지
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• 제6권1호
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• pp.87-91
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• 2001

PECVD 방법으로 60 Hz 상용전원을 사용하여 발생한 아세틸렌 플라스마로부터 다이아몬드성 탄소박막을 제작하고 Raman 분광에 의하여 D($sp^3$)와 G($sp^2$) 피크를 관측하여 박막의 다이아몬드성 정도를 확인하였고 $sp^3$와 $sp^2$의 비율과 FTIR 결과로부터 박막내의 수소함량의 측정을 통하여 아세틸렌 분압비와의 연관성을 확인하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권7호
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• pp.359-363
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• 2006

Single-walled carbon nanotubes (SWCNTs) with few defects and very small amount of amorphous carbon coating have been synthesized by catalytic decomposition of methane in $H_2$ over well-dispersed metal particles supported on MgO. The yield of SWCNTs was estimated to be 88.5% and the purities of SWCNTs thus obtained were more than 90%. Peak of the radial breathing mode in the Raman spectrum demonstrated that the diameters of synthesized CNTs are in the range 0.4-2.0 nm. Our results also indicated that MgO support materials are useful to a large-scale synthesis of high-quality SWCNTs. Increasing temperature could remarkably increase the yield and also improve the quality of SWCNTs from catalytic decomposition of methane. The morphologies and microstructures of the synthesized carbon materials were characterized by scanning electron microscopy (SEM), Thermogravimetric analysis (TGA), Raman spectroscopy, and X-ray diffraction (XRD).

• 대한화학회지
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• 제36권1호
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• pp.24-27
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• 1992

구리나 아연 막대에 의하여 은 졸의 응결이 일어난다. 은 졸의 표면에 있는 은 이온이 구리 혹은 아연 금속과의 산화-환원 반응에 의하여 은 금속으로 환원되면서 응결이 일어난다고 여겨진다. 구리 막대로 응결시킨 은 졸의 라만 스펙트럼을 연구하였다. 은 콜로이드 표면에 붕산과 질산 이온이 흡착되어 있다는 증거를 발견하였다. 은 콜로이드 표면에 흡착된 이들 이온들은 첨가된 흡착제에 의하여 쉽게 치환된다는 사실 또한 발견하였다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권7호
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• pp.387-394
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• 2004

Diamond films were deposited on the cemented tungsten carbide WC-Co cutting insert substrates by using both microwave plasma chemical vapor deposition(MWPCVD) and radio frequency plasma chemical vapor deposition (RFPCVD) from $CH_4$$-H_2$$-O_2$ gas mixture. Scanning electron microscopy and X-ray diffraction techniques were used to investigate the microstructure and phase analysis of the materials and Raman spectrometry was used to characterize the quality of the diamond coating. Diamond films deposited using MWPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show a dense, uniform, well faceted and polycrystalline morphology. The compressive stress in the diamond film was estimated to be (1.0∼3.6)$\pm$0.9 GPa. Diamond films which were deposited on the WC-Co cutting insert substrates by RFPCVD from $CH_4$$-H_2$$-O_2$ gas mixture show relatively good adhesion, very uniform, dense and polycrystalline morphology.