• Title/Summary/Keyword: Raman spectrum

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The Electronic Structure of Methanethiol Adsorbed on Silver Surface: An Extended Huckel Study

  • Hwang, Sun-Gu;Jang, Yun-Hee;Kim, Ho-Jing
    • Bulletin of the Korean Chemical Society
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    • v.12 no.6
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    • pp.635-643
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    • 1991
  • The adsorption of methanethiol on a Ag(100) surface has been studied with Extended Huckel calculation in the cluster approximation of the substrate. Since it has been known that methanethiol is chemisorbed dissociatively on silver surface by rupture of S-H bond, the methanethiolate radical is taken as adsorbate. Of the various adsorption sites, the 4-fold hollow site is preferred. The methanethiolate radical is mainly adsorbed via its 2e orbital. The charge transfer from metal to this level leads to the C-S bond weakening, which is consistent with the red shift of C-S stretching mode in surface enhanced Raman (SER) spectrum.

Optical Properties of Ga2O3 Single Crystal by Floating Zone Method (부유대역법을 이용한 단결정Ga2O3의 광학적 특성)

  • Gim, JinGi;Kim, Jongsu;Kim, Gwangchul
    • Journal of the Semiconductor & Display Technology
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    • v.20 no.4
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    • pp.78-82
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    • 2021
  • The Ga2O3 single crystal was grown through a floating zone method, and its structural and optical properties were instigated. It has a monoclinic crystal structure with a (100) crystal orientation and an optical band gap energy of 4.6 eV. It showed an average transmittance of 70% in the visible region. At room temperature, its photoluminescent spectrum showed three different peaks: the ultraviolet at 360 nm, the blue-green at 500 nm, and the red peaks at 700 nm. Especially, at liquid nitrogen temperature, the ultraviolet peak was optically active while the others were quenched.

Enhancing Thermal Conductivity in Epoxy Composites with Functionalized Boron Nitride Nanosheets

  • Yang Soo Kim;Ik-Tae Im;Jong Seok Kim
    • Korean Journal of Materials Research
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    • v.33 no.12
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    • pp.503-510
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    • 2023
  • This comprehensive study delves into the intricate process of exfoliating and functionalizing boron nitride nanosheets (BNNSs) extracted from hexagonal boron nitride (h-BN), and meticulously explores their potential application within epoxy composites. The extensive research methodology encompasses a sequence of treatments involving hydrothermal and sonication processes aimed at augmenting the dispersion of BNNSs in solvents. Leveraging advanced analytical techniques such as Raman spectroscopy, X-ray diffraction, and FTIR spectroscopy, the study rigorously analyzes a spectrum of changes in the BNNS's properties, including layer count variations, interlayer interactions, crystal structure modifications, and the introduction of functional groups. The research also rigorously evaluates the impact of integrating BNNSs, specifically glycidyl methacrylate (GMA)-functionalized BNNSs, on the thermal conductivity of epoxy composites. The conclusive findings exhibit notable enhancements in thermal properties, predominantly attributed to the enhanced dispersion of fillers and enhanced interactions within the epoxy matrix. This pioneering work illuminates the wide potential of functionalized BNNSs for significantly enhancing the thermal conductivity of epoxy composites, paving the way for advanced materials engineering and practical applications.

Characterization of N-doped SiC(3C) epilayer by CVD on Si(111) (화학기상증착으로 Si(111) 위에 성장된 N-SiC(3C) 에피층의 특성)

  • 박국상;김광철;남기석;나훈균
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.9 no.1
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    • pp.39-42
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    • 1999
  • Nitrogen-doped SiC(3C) (N-SiC(3C)) epliayers were grown on Si(111) substrate at $1250^{\circ}C$ using chemical vapor deposition (CVD) technique by pyrolyzing tetramethylsilane(TMS) in $H_{2}$ carrier gas. SiC(3C) layer was doped using $NH_{3}$ during the CVD growth to be n-type conduction. Physical properties of N-SiC(3C) were investigated by Fourier transform infrared (FTIR) spectroscopy, X-ray diffraction (XRD) patterns, Raman spectroscopy, cross-sectional transmission electron microscopy (XTEM), Hall measurement, and current-voltage(I-V) characteristcs of the N-SiC(3C)/Si(p) diode. N-SiC(3C) layers exhibited n-type conductivity. The n-type doping of SiC(3C) could be controlled by nitrogen dopant using $NH_{3}$ at low temperature.

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The characteristics of black pearl cultured using Pen shell (Atrina pectinata) (키조개(Atrina pectinata)를 이용하여 양식한 흑진주의 특성평가)

  • Lee, Jeong-Im;Kim, Pan-Chae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.18 no.5
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    • pp.205-210
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    • 2008
  • Pearl is the organic gemstone which does not come from mines but from the biomineralization inside mollusc. Mollusc with nacre on inner surface of the shell is inevitable to make pearl. In this paper we researched and analyzed the pearls cultured using Pen shell (Atrina pectinata) which is not used in pearl farming industry but has potential to make pearls because it has thick and beautiful nacre inside the shell. SEM analysis was conducted to reveal the pattern of nacre on the Atrina pectinata pearl. Specific characteristics as sea-water pearl are detected by further analysis with ED-XRF. Aragonite specific peaks such as $1083cm^{-1}$ and $705cm^{-1}$ were shown by Raman analysis. UV-Vis analysis of Atrina pectinata pearl showed different pattern of spectrum compared with Pinctada margaritifera pearl. The reason for this discrepancy is assumed by the metabolic difference of each species.

Optical Properties of Diamond Like Carbon Films Deposited by Plasma Enhanced CVD (rf PECVD법으로 증착된 DLC film의 광학적 성질)

  • Kim, Moon-Hyup;Song, Jae-Jin;Kim, Seong-Jin
    • Korean Journal of Materials Research
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    • v.11 no.7
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    • pp.550-555
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    • 2001
  • A diamond-like carbon(DLC) films were deposited on the borosilicate glass substrate by radio frequency plasma enhanced chemical deposition(rf-PECVD). The $methane(CH_4)-hydrogen(H_2)$ gas mixture was used as precursor gas. The morphologies, the structure and the optical properties of the DLC films were investigated by SEM, Raman and UV spectrometer. The deposition rate was slightly increased with the hydrogen concentration in the gas mixture and it maintained constant at over 25 sccm of the gas flow rate. The optical band gap calculated by UV spectra decreased with increase of deposition time and DC self bias, but that were not effected by hydrogen content. Most effective parameter on the transmittance of film was bias voltage, especially in the range of ultra violet and visible light.

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Diamond Like Carbon Coating on WC Core Pin for Injection Molding of Zirconia Optical Ferrule (지르코니아 광페룰 사출성형용 WC 코아 핀의 Diamond Like Carbon 코팅)

  • Park, Hyun-Woo;Jeong, Se-Hoon;Kim, Hyun-Young;Lee, Kwang-Min
    • Korean Journal of Materials Research
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    • v.20 no.11
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    • pp.570-574
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    • 2010
  • A diamond-like carbon (DLC) film deposited on a WC disk was investigated to improve disk wear resistance for injection molding of zirconia optical ferrule. The deposition of DLC films was performed using the filtered vacuum arc ion plating (FV-AIP) system with a graphite target. The coating processing was controlled with different deposition times and the other conditions for coating, such as input power, working pressure, substrate temperature, gas flow, and bias voltage, were fixed. The coating layers of DLC were characterized using FE-SEM, AFM, and Raman spectrometry; the mechanical properties were investigated with a scratch tester and a nano-indenter. The friction coefficient of the DLC coated on the WC was obtained using a pin-on-disk, according to the ASTM G163-99. The thickness of DLC films coated for 20 min. and 60 min. was about 750 nm and 300 nm, respectively. The surface roughness of DLC films coated for 60 min. was 5.9 nm. The Raman spectrum revealed that the G peak of DLC film was composed of $sp^3$ amorphous carbon bonds. The critical load (Lc) of DLC film obtained with the scratch tester was 14.6 N. The hardness and elastic modulus of DLC measured with the nano-indenter were 36.9 GPa and 585.5 GPa, respectively. The friction coefficient of DLC coated on WC decreased from 0.2 to 0.01. The wear property of DLC coated on WC was enhanced by a factor of 20.

Characterization of the effect of He+ irradiation on nanoporous-isotropic graphite for molten salt reactors

  • Zhang, Heyao;He, Zhao;Song, Jinliang;Liu, Zhanjun;Tang, Zhongfeng;Liu, Min;Wang, Yong;Liu, Xiangdong
    • Nuclear Engineering and Technology
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    • v.52 no.6
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    • pp.1243-1251
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    • 2020
  • Irradiation-induced damage of binderless nanoporous-isotropic graphite (NPIG) prepared by isostatic pressing of mesophase carbon microspheres for molten salt reactor was investigated by 3.0 MeV He+ irradiation at room temperature and high temperature of 600 ℃, and IG-110 was used as the comparation. SEM, TEM, X-ray diffraction and Raman spectrum are used to characterize the irradiation effect and the influence of temperature on graphite radiation damage. After irradiation at room temperature, the surface morphology is rougher, the increase of defect clusters makes atom flour bend, the layer spacing increases, and the catalytic graphitization phenomenon of NPIG is observed. However, the density of defects in high temperature environment decreases and other changes are not obvious. Mechanical properties also change due to changes in defects. In addition, SEM and Raman spectra of the cross section show that cracks appear in the depth range of the maximum irradiation dose, and the defect density increases with the increase of irradiation dose.

Optical Properties of HVPE Grown Thick-film GaN on $MgAl_2O_4$ Substrate ($MgAl_2O_4$ 기판위에 HVPE법으로 성장된 후막 GaN의 광학적 특성)

  • Lee, Yeong-Ju;Kim, Seon-Tae
    • Korean Journal of Materials Research
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    • v.8 no.6
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    • pp.526-531
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    • 1998
  • A hydride vapor phase epitaxy (HVPE) method was performed to grow the $10~240\mu{m}$ thick GaN films on (111) spinel $MgAl_2O_4$ substrate. The GaN films on $MgAl_2O_4$ substrate revealed a photoluminescence (PL) characteristics of the impurity doped GaN by the out-diffusion and auto-doping of Mg from $MgAl_2O_4$ substrate during GaN growth. The PL spectrum measured at 10K consists of free and bound excitons related recombination transitions and impurity-related donor-acceptor pair recombination and its phonon replicas. However, the deep-level related yellow band emission was not observed. The peak energy of neutral donor bound excitonic emission and the frequency of Raman $E_2$ mode were exponentially decreased with increasing the GaN thicknesses. and the frequency of E, Raman mode was shifted with the relation of $\Delta$$\omega$=3.93$\sigma$($cm^{-1}$/GPa), where l1 (GPa) is the residual strain in the GaN epilayers.

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Synthesis of Double-walled Carbon Nanotubes Using Decomposition of Tetra Hydro Furan (Tetra Hydro Furan 열분해를 이용한 이중벽 구조 탄소나노튜브의 합성)

  • Kang, Ha-Na;Jung, Da-Mi;Sok, Jung-Hyun
    • Journal of the Korean Vacuum Society
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    • v.17 no.6
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    • pp.576-581
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    • 2008
  • High-quality double-walled carbon nanotubes (DWNTs) were synthesized without defects and amorphous carbonaceous particles by catalytic decomposition method at $800^{\circ}C$ in high yield. As-synthesized carbon materials almost consist of DWNT bundles with a diameter 12 - 20 nm.. The DWNTs rope have uniform diameter about 2 - 5 um and length up to several tens micrometer. DWNTs is inner tube diameter 0.9 - 1.5 nm and outer tube 1.6 - 2.2 nm. We investigate the crystallinity of DWNTs by TEM and Raman spectroscopy. We also found that the Fe-Mo bimetallic catalyst was active as a very efficient catalyst for the synthesis of DWNTs with the catalyst decomposition method. Our results also indicate that Tetra Hydro Furan (THF) is a very ideal carbon source for the synthesis of DWNTs.