• 한국통신학회:학술대회논문집
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• 한국통신학회 2004년도 하계종합학술발표회논문초록집
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• pp.99-99
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• 2004

• Carbon letters
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• 제14권2호
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• pp.94-98
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• 2013

Isotropic pitch fibers were stabilized and carbonized for preparing carbon fibers. To optimize the duration and temperature during the stabilization process, a thermogravimetric analysis was conducted. Stabilized fibers were carbonized at 1000, 1500, and $2000^{\circ}C$ in a furnace under a nitrogen atmosphere. An elemental analysis confirmed that the carbon content increased with an increase in the carbonization temperature. Although short graphitic-like layers were observed with carbon fibers heat-treated at 1500 and $2000^{\circ}C$, Raman spectroscopy and X-ray diffraction revealed no significant effect of the carbonization temperature on the crystalline structure of the carbon fibers, indicating the limit of developing an ordered structure of isotropic pitch-based carbon fibers. The electrical conductivity of the carbonized fiber reached $3.9{\times}10^4$ S/m with the carbonization temperature increasing to $2000^{\circ}C$ using a four-point method.

• 대한기계학회논문집B
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• 제24권11호
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• pp.1464-1469
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• 2000

The effects of SiCl$_4$addition on flame structures have been studied in flame hydrolysis deposition (FHD) processes using Coherent anti-Stokes Raman spectroscopy (CARS) and planar laser induced fluorescence (PLIF) to measure temperatures and OH concentrations, respectively. The results demonstrate that even a small amount of SiCl$_4$ addition can change thermal and chemical structures of H$_2$/O$_2$ diffusion flames. When SiCl$_4$ is added to a flame temperature decreases in non-reacting zone due to the increases in both specific heat and density of the gas mixture, while flame temperature increase in particle formation zone due to the heat release through hydrolysis and oxidation reactions of SiCl$_4$. It is also found that OH concentration decreases dramatically in particle formation zone where temperatures increase. This can be attributed to consumption of oxidative species and generation of HCl during silica formation.

• 한국재료학회지
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• 제19권10호
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• pp.522-526
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• 2009

Graphene has been effectively synthesized on Ni/SiO$_2$/Si substrates with CH$_4$ (1 SCCM) diluted in Ar/H$_2$(10%) (99 SCCM) by using an inductively-coupled plasma-enhanced chemical vapor deposition. Graphene was formed on the entire surface of the 500 nm thick Ni substrate even at 700 $^{\circ}C$, although CH$_4$ and Ar/H$_2$ gas were supplied under plasma of 600 W for 1 second. The Raman spectrum showed typical graphene features with D, G, and 2D peaks at 1356, 1584, and 2710 cm$^{-1}$, respectively. With increase of growth temperature to 900 $^{\circ}C$, the ratios of the D band intensity to the G band intensity and the 2D band intensity to the G band intensity were increased and decreased, respectively. The results were strongly correlated to a rougher and coarser Ni surface due to the enhanced recrystallization process at higher temperatures. In contrast, highquality graphene was synthesized at 1000 $^{\circ}C$ on smooth and large Ni grains, which were formed by decreasing Ni deposition thickness to 300 nm.

• 한국안광학회지
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• 제3권1호
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• pp.1-8
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• 1998

지주파 PECVD 방법으로 아세틸렌 분암비를 달리하면서 제작한 비정질 탄소 박막에서의 분광 특성을 조사하였다. Raman 분광으로부터 D 피크와 G 피크의 상대적인 세기로부터 $sp^3/sp^2$은 수소함량에 대한 경향성을 알 수가 있었으며, FTIR 분광으로부터 계산된 수소함량은 16~37 atm %, $sp^3/sp^2$d,s 0.22~1.44로 변화하였다. 이와 같은 분광특성에 의하여 최적의 아세틸렌 분압비는~15%임을 알 수가 있었다.

• 한국안광학회지
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• 제8권2호
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• pp.91-97
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• 2003

마이크로웨이브 플라즈마 화학증착법을 이용하여 C-H계에서 메탄 농도를 변화시키면서 각각의 농도 변화에 따른 증착상의 변화 거동을 관찰하였는데 메탄 농도가 증가함에 따라 성장 속도는 증가하지만 다이아몬드 박막내 비다이아몬드 성분의 양이 많아지며 결정성이 떨어졌다. Raman 분광으로부터 D 피크($sp^3$)와 G 피크($sp^2$)의 상대적인 세기로부터 $sp^3/sp^2$, 수소함량에 대한 경향성을 알 수가 있었으며 FTIR 분광으로부터 수소함량은 16~37%, $sp/sp^2$은 0.22~1.14로 변화하였다. 이들 결과로부터 최적의 제작조건은 메탄 분압비 13.8%임을 알 수가 있었다.

• 한국세라믹학회지
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• 제52권6호
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• pp.514-520
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• 2015

$KY_{1-x}(WO_4)_2:Ho^{3+}/Yb^{3+}$ yellow phosphors with doping concentrations of $Ho^{3+}$ and $Yb^{3+}$ ($x=Ho^{3+}+Yb^{3+}$, $Ho^{3+}=0.05$, 0.1, 0.2 and $Yb^{3+}=0.2$, 0.45) were successfully prepared using the microwave-modified sol-gel method; their upconversion (UC) photoluminescence properties were investigated in detail. Well-crystallized particles, formed after heat-treatment at $900^{\circ}C$ for 16 h, showed a fine and homogeneous morphology with particle sizes of $2-5{\mu}m$. Under excitation at 980 nm, the UC $KY_{0.7}(WO_4)_2:Ho_{0.1}Yb_{0.2}$ and $KY_{0.5}(WO_4)_2Ho_{0.05}Yb_{0.45}$ particles exhibited excellent yellow emissions based on a strong 545-nm emission band in the green region and a very strong 655-nm emission band in the red region. Pump power dependence and Commission Internationale de L'Eclairage chromaticity of the UC emission intensity were evaluated. The spectroscopic properties were examined comparatively using Raman spectroscopy.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2002년도 하계학술대회 논문집
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• pp.330-333
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• 2002

The substrate temperature is an important parameter in thin film deposition process. In this paper the effects of the substrate temperature on the properties of CuIn0.75Ga0.25Se2(CIGS) thin films are reported. Structure, surface morphology and optical properties of CIGS thin films deposited at various substrate temperatures have been investigated using a number of analysis techniques. X-ray diffraction (XRD) analysis shows that CIGS films exhibit a strong <112> preferred orientation. As expected, at higher substrate temperatures the films displayed a higher degree of crystallinity. The <112> peak was also enhanced and other CIGS peaks appeared simultaneously These results were supported by experimental work using Raman spectroscopy. The Raman spectra of the as-grown CIGS thin films show only the Al mode peak. The intensity of this peak was enhanced at higher deposition temperatures. Scanning electron microscopy (SEM) results revealed very small grains in films fabricated at 48$0^{\circ}C$ substrate temperature. When the substrate temperature was increased the average grain size also increased together with a reduction in the number and size of the voids. The deposition temperature also had a significant influence on the transmission spectra.

• Carbon letters
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• 제13권4호
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• pp.205-211
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• 2012

Methanol as a carbon source in chemical vapor deposition (CVD) graphene has an advantage over methane and hydrogen in that we can avoid optimizing an etching reagent condition. Since methanol itself can easily decompose into hydrocarbon and water (an etching reagent) at high temperatures [1], the pressure and the temperature of methanol are the only parameters we have to handle. In this study, synthetic conditions for highly crystalline and large area graphene have been optimized by adjusting pressure and temperature; the effect of each parameter was analyzed systematically by Raman, scanning electron microscope, transmission electron microscope, atomic force microscope, four-point-probe measurement, and UV-Vis. Defect density of graphene, represented by D/G ratio in Raman, decreased with increasing temperature and decreasing pressure; it negatively affected electrical conductivity. From our process and various analyses, methanol CVD growth for graphene has been found to be a safe, cheap, easy, and simple method to produce high quality, large area, and continuous graphene films.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제52권8호
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• pp.325-329
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• 2003

Effects of thermal treatment on the structural properties of diamond-like carbon (DU) films were examined. The DLC films were deposited by using a modified filtered cathodic vacuum arc (FCVA) deposition system and by varying the negative substrate bias voltage, deposition time, and nitrogen flow rate. Thermal treatment on DLC films was performed using a rapid thermal annealing (RTA) process at $600^{\circ}C$ for 2min. Raman spectroscopy, x-ray photoemission spectroscopy (XPS), atomic force microscope (AFM), and surface profiler were used to characterize the I$_{D}$I$_{G}$ intensity ratio, sp$^3$ hybrid carbon fraction, internal stress, and surface roughness. It was found for all the deposited DLC films that the RTA-treatment results in the release of internal compressive stress, while at the same time it leds to the decrease of sp$^3$ fraction and the increase of I$_{D}$I$_{G}$ intensity ratio. It was also suggested that the thermal treatment effect on the structural property of DLC films strongly depends on the diamond-like nature (i.e., sp$^3$ fraction) of as-deposited film.ed film.