• Transactions on Electrical and Electronic Materials
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• v.16 no.4
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• pp.169-172
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• 2015

Although, there are several research studies on the engineering of the graphene layers using different etching techniques, there is not any comprehensive study on the effects of using different etching masks in the reactive ion etching (RIE) method on the quality and uniformity of the etched graphene films. This study investigated the effects of using polystyrene and conventional photolithography resist as a etching mask on the engineering of the number of graphene layers, using RIE. The effects were studied using Raman spectroscopy. This analysis indicated that the photo-resist mask is better than the polystyrene mask because of its lower post processing effects on the graphene surface during the RIE process. A single layer graphene was achieved from a bi-layer graphene after 3 s of the RIE process using oxygen plasma, and the bi-layer graphene was successfully etched after 6 s of the RIE process. The bilayer etching time was significantly smaller than reported values for graphene flakes in previous research.

• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.49-54
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• 2010

We have successfully synthesized $CeO_2$ nanopowders by means of the hydrothermal method, in a low temperature range of $100-200^{\circ}C$. In order to investigate the structure and morphology of the nanopowders, scanning electron microscopy and X-ray diffraction have been employed. In addition, for exploring the optical properties, Raman spectroscopy, Fourier transform infrared spectroscopy, and photoluminescence spectroscopy have been used. In the optimized condition, with the pH, velocity, and time of 4.5, 600 rpm, and 60 h, the $CeO_2$ nanopowders with a diameter ranging from 50 to 150 nm have been synthesized. The nanopowders exhibited the visible emission mainly in the blue region. With comparing the reaction time, it is revealed that the extinction of functional groups at 60 h contributed to the growth and homogenization of the $CeO_2$ powders. Since the overgrowth and agglomeration of nanopowders were found, we suggest that the cracking/growth process is more favorable mechanism than the dissolution/precipitation process.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.14 no.5
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• pp.2393-2399
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• 2013

In this paper, we proposed a method to screening of Alzheimer's disease (AD) from Raman spectra of platelet with synthesis of basis spectra using singular value decomposition (SVD). Raman spectra of platelet from AD transgenic mice are preprocessed with denoising, removal background and normalization method. The column vectors of each data matrix consist of Raman spectrum of AD and normal (NR). The matrix is factorized using SVD algorithm and then the basis spectra of AD and NR are determined by 12 column vectors of each matrix. The classification process is completed by select the class that minimized the root-mean-square error between the validation spectrum and the linear synthesized spectrum of the basis spectra. According to the experiments involving 278 Raman spectra, the proposed method gave about 97.6% classification rate, which is better performance about 6.1% than multi-layer perceptron (MLP) with extracted features using principle components analysis (PCA). The results show that the basis spectra using SVD is well suited for the diagnosis of AD by Raman spectra from platelet.

• Proceedings of the KIEE Conference
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• 2000.07c
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• pp.1503-1505
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• 2000

To grow the diamond films by using RF-MW mix-process, at first, diamond seeds were deposited on silicon substrate by RF plasma CVD, and then a diamond layer grown by MW plasma CVD on the seeds. The grain-size of diamond films deposited by using HF-MW mix-process was smaller and denser than those of the MW plasma CVD process. The deposited diamond films were analyzed by scanning electron microscophy, X-ray diffractometer and Raman spectroscopy.

• Bulletin of the Korean Chemical Society
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• v.33 no.2
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• pp.505-510
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• 2012

Cobalt oxide nanostructure materials have been prepared by adding several concentrations of spectator Ni ions in solution, and analyzed by electron microscopy, X-day diffraction, calorimetry/thermogravimetric analysis, UV-vis absorption, Raman, and X-ray photoelectron spectroscopy. The electron microscopy results show that the morphology of the nanostructures is dramatically altered by changing the concentration of spectator ions. The bulk XRD patterns of $350^{\circ}C$-annealed samples indicate that the structure of the cobalt oxide is all of cubic Fd-3m $Co_3O_4$, and show that the major XRD peaks shift slightly with the concentration of Ni ions. In Raman spectroscopy, we can confirm the XRD data through a more obvious change in peak position, broadness, and intensity. For the un-sputtered samples in the XPS measurement process, the XPS peaks of Co 2p and O 1s for the samples prepared without Ni ions exhibit higher binding energies than those for the sample prepared with Ni ions. Upon $Ar^+$ ion sputtering, we found $Co_3O_4$ reduces to CoO, on the basis of XPS data. Our study could be further applied to controlling morphology and surface oxidation state.

• Proceedings of the Materials Research Society of Korea Conference
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• 2003.03a
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• pp.174-174
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• 2003

Highly (111)-oriented PZT [Pb(Zrl-xTix)O3] thin films in the Zr-rich rhombohedral phase-field were successfully fabricated on Pt(111)/Ti/SiO2/Si substrates by combining PLD method with sol-gel process. These highly (111)-oriented films can be used as model systems for polarized Raman scattering study of PZT in the rhombohedral-Phase field because the (111)-direction is the principal off-center axis of the rhombohedral ferroelectricity. For this purpose, we have fabricated PZT films employing two distinctive compositions : one with Zr/Ti = 90/10 (abbreviated as PZT90/10) and the other with Zr/Ti= 60/40 (PZT60/40). The PZT90/10 film belongs to the octahedrally distorted FR(LT) phase with a cell-doubled structure, whereas the PZT60/40 is in the high-temperature FR(HT) phase-field at room temperature. To clearly separate E(TO) phonon modes from Al(TO) modes of the (111)-oriented rhombohedral film, we have suitably devised Z(X,Y)Z and Z(X,X)Z backscattering geometries for E(TO) and Al (TO), respectively. The polarized scattering experiment demonstrated that both types of (111)-oriented rhombohedral films closely followed the Raman selection rule.

• Journal of the Korean Magnetic Resonance Society
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• v.18 no.1
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• pp.15-23
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• 2014

The structural properties and relaxation processes of $MCsSO_4$ (M = Na, K, or Rb) crystals were investigated by measuring the NMR spectra and spin-lattice relaxation rates $1/T_1$ of their $^{23}Na$, $^{39}K$, $^{87}Rb$, and $^{133}Cs$ nuclei. According to the NMR spectra, the $MCsSO_4$ crystals contain two crystallographically inequivalent sites each for the M and Cs ions. Further, the relaxation rates of all these nuclei do not change significantly over the investigated temperature range, indicating that no phase transitions occur in these crystals in this range. The variations in the $1/T_1$ values of the $^{23}Na$, $^{39}K$, $^{87}Rb$, and $^{133}Cs$ nuclei in these three crystals with increasing temperature are approximately proportional to $T^2$, indicating that Raman processes may be responsible for the relaxation. Therefore, for nuclear quadrupole relaxation of the $^{23}Na$, $^{39}K$, $^{87}Rb$, and $^{133}Cs$ nuclei, Raman processes with n = 2 are more effective than direct processes.

• Journal of the Korean institute of surface engineering
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• v.43 no.1
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• pp.7-11
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• 2010

Solid phase crystallization (SPC) is a simple method in producing a polycrystalline phase by annealing amorphous silicon (a-Si) in a furnace environment. Main motivation of the crystallization technique is to fabricate low temperature polycrystalline silicon thin film transistors (LTPS-TFTs) on a thermally susceptible glass substrate. Studies on SPC have been naturally focused to the low temperature regime. Recently, fabrication of polycrystalline silicon (poly-Si) TFT circuits from a high temperature polycrystalline silicon process on steel foil substrates was reported. Solid phase crystallization of a-Si films proceeds by nucleation and growth. After nucleation polycrystalline phase is propagated via twin mediated growth mechanism. Elliptically shaped grains, therefore, contain intra-granular defects such as micro-twins. Both the intra-granular and the inter-granular defects reflect the crystallinity of SPC poly-Si. Crystallinity and SPC kinetics of high temperatures were compared to those of low temperatures using Raman analysis newly proposed in this study.

• Korean Journal of Materials Research
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• v.16 no.10
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• pp.656-662
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• 2006

We fabricated thermal evaporated 10 nm-$Ni_xCo_{1-x}$ (x=0.2, 0.5 and 0.8) /(poly)Si films to form nanothick cobalt nickel composite silicides by a rapid thermal annealing at $700{\sim}1100^{\circ}C$ for 40 seconds. A field emission scanning electron microscope and a micro-Raman spectrometer were employed for microstructure and silicon residual stress characterization, respectively. We observed self-aligned micro-pinholes on single crystal silicon substrates silicidized at $1100^{\circ}C$. Raman silicon peak shift indicates that the residual tensile strain of $10^{-3}$ in single crystal silicon substrates existed after the silicide process. We propose thermal stress from silicide exothermic reaction and high temperature silicidation annealing may cause the pinholes. Those pinholes are expected to be avoided by lowering the silicidation temperature. Our results imply that we may use our newly proposed composite silicides to induce the appropriate strained layer in silicion substrates.

• Korean Journal of Metals and Materials
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• v.50 no.1
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• pp.23-27
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• 2012

The color of a natural diamond that contains nitrogen impurities can be enhanced by a high pressure high temperature (HPHT) treatment. Type IaAB diamond samples containing nitrogen impurities were executed by HPHT process of 5.6 Gpa, 10 min by varying the annealing temperature at 1600, 1650, and $1700^{\circ}C$. Property characterization was carried out using an optical microscope, FT-IR spectrometer, low-temperature PL spectrometer, and micro Raman spectrometer. By observing optical micrographs, it can be seen that diamond sample began to alter its color to vivid yellow at $1700^{\circ}C$. In the FT-IR spectrum, there were no Type changes of the diamond samples. However, amber centers leading to brown colors lessened after $1700^{\circ}C$ annealing. In the PL spectrum, all the H4 centers became extinct, while there were no changes of yellow color center H3 before or after treatment. In the Raman spectrum, no graphite spots were detected. Consequently, diamond color enhancement can be done by higher than $1700^{\circ}C$ HPHT annealing at 5.6 GPa-10 min.