• Progress in Superconductivity
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• v.6 no.2
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• pp.95-98
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• 2005

We present results of Raman spectroscopic studies of superconducting $YBa_2Cu_3O_7$ (YBCO) coated conductors. Raman scattering is used to characterize optical phonon modes, oxygen content, c-axis misalignment, and second phases of the YBCO coated conductors at a micro scale. A two-dimensional mapping of Raman spectra with transport properties has been performed to elucidate the effect of local propertied on current path and superconducting phase. The information taken from the local measurement will be useful for optimizing the process condition.

• The Bulletin of The Korean Astronomical Society
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• v.44 no.1
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• pp.46.3-46.3
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• 2019

We present our observational and theoretical investigation of Raman-scattered features in symbiotic stars (SySts). SySts are long interacting binaries, consisting of a hot compact star and an evolved giant, whose interaction via accretion process is at the origin of a tangled network of gas and dust nebulae. These systems are ideal objects to study a variety of important astrophysical problems, and have also been proposed as possible progenitors of type Ia supernova. In this talk, we emphasize that Raman-scattered features are exclusive spectroscopic tools to probe the stellar wind accretion processes in SySts. We studied mass transfer and mass loss processes in SySts using high resolution spectra obtained with 1.8m telescope at Mt. Bohyun and the 6.5m Magellan-Clay telescope combining with the theoretical modeling of radiative transfer of Raman-scattered features. We also note that there are a much smaller number of SySts known in our Galaxy, implying the necessity of systematic search programs. In view of the fact that Raman O VI features at $6830{\AA}$ are found in only bona fide SySts, we will carry out a photometric search of objects with Raman O VI features using a narrow band filter centered at $6830{\AA}$ in Local group galaxies.

• Progress in Superconductivity and Cryogenics
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• v.9 no.4
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• pp.24-27
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• 2007

The purpose of this work is to develop, integrate, and implement an optical characterization method to evaluate physical properties in coated conductors and investigate the local distribution of the causes of degraded performance. The method that we selected at this moment is Raman scattering spectroscopy, which is accompanied with measurements of local supercurrent transport, phase composition, microstructure, and epitaxy quality for coated conductors that range in size up to multi-meter-length tapes and that embrace the entire tape embodiment (substrate through cap layer). The establishment of Raman spectroscopy as an on-line process monitoring tool is our eventual goal of research, but it requires very robust and cost-effective equipments. We analyzed $YBa_2Cu_3O_7(YBCO)$ thin films grown at various substrate temperatures by using Raman spectroscopy. YBCO films were grown by a high-rate electron-beam co-evaporation method. Raman spectra of YBCO films with lower-transport properties exhibit additional phonon modes at ${\sim}300cm^{-1}$, ${\sim}600cm^{-1}$ and ${\sim}630cm^{-1}$, which are related to second-phases such as $Ba_2Cu_3O_{5.9}$ and $BaCuO_2$. We propose a new method to characterize Raman spectra of coated conductors for an in-line quality control.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.11 no.7
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• pp.535-540
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• 1998

Thin films of PLZT were prepared on indium tin oxide(ITO) coated glass substrates by sol-gel process and annealed by rapid thermal annealing(RTA) at $750^{\circ}C$ for 5 minutes. The crystal structure of PLZT thin films were investigated for a different Zr mol% content. XRD results showed that the crystallographic structure was transitted from tetragonal to rhombohedral structure as Zr mol% increased. Raman spectroscopy results showed that the bands of spectra became broader as the amount of Zr mol% increased and two crystal phase coexisted at 2/55/45 PLZT film. Raman spectroscopy was useful for crystal structure analysis of PLZT thin films.

• Journal of Sensor Science and Technology
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• v.30 no.4
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• pp.267-272
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• 2021

In this study, Ag was deposited to investigate its applicability as a surface-enhanced Raman scattering substrate after forming a grass-type black silicon structure through maskless reactive ion etching. Grass-structured black silicon with heights of 2 - 7 ㎛ was formed at radio-frequency (RF) power of 150 - 170 W. The process pressure was 250 mTorr, the O₂/SF₆ gas ratio was 15/37.5, and the processing time was 10 - 20 min. When the processing time was increased by more than 20 min, the self-masking of Si_xO_yF_z did not occur, and the black silicon structure was therefore not formed. Raman response characteristics were measured based on the Ag thickness deposited on a black silicon substrate. As the Ag thickness increased, the characteristic peak intensity increased. When the Ag thickness deposited on the black silicon substrate increased from 40 to 80 nm, the Raman response intensity at a Raman wavelength of 1507 / cm increased from 8.2 × 10³ to 25 × 10³ cps. When the Ag thickness was 150 nm, the increase declined to 30 × 10³ cps and showed a saturation tendency. When the RF power increased from 150 to 170 W, the response intensity at a 1507/cm Raman wavelength slightly increased from 30 × 10³ to 33 × 10³ cps. However, when the RF power was 200 W, the Raman response intensity decreased significantly to 6.2 × 10³ cps.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.381.1-381.1
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• 2014

In this study, we investigated the deposition behavior and the etch resistivity of plasma polymerized carbon hardmask (ppCHM) film with the variation of process temperature. The etch resistivity of deposited ppCHM film was analyzed by thickness measurement before and after direct contact reactive ion etching process. The physical and chemical properties of films were characterized on the Fourier transform infrared (FT-IR) spectroscope, Raman spectroscope, stress gauge, and ellipsometry. The deposition behavior of ppCHM process with the variation of temperature was correlated refractive index (n), extinction coefficient (k), intrinsic stress (MPa), and deposition rate (A/s) with the hydrocarbon concentration, graphite (G) and disordered (D) peak by analyzing the Raman and FT-IR spectrum. From this experiment we knew an optimal deposition condition for structure of carbon hardmask with the higher etch selectivity to oxide. It was shown the density of ppCHM film had 1.6~1.9 g/cm3 and its refractive index was 1.8~1.9 at process temperature, $300{\sim}600^{\circ}C$. The etch selectivity of ppCHM film was shown about 1:4~1:8 to undoped siliconoxide (USG) film (etch rate, 1300 A/min).

• Journal of Sensor Science and Technology
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• v.29 no.4
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• pp.255-260
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• 2020

In this study, we developed a method of improving the surface-enhanced Raman spectroscopy (SERS) response characteristics by depositing a nanoporous Ag metal thin film through cluster source sputtering after forming a pyramidal texture structure on the Si substrate surface. A reactive ion etching (RIE) system with a metal mesh inside the system was used to form a pyramidal texture structure on the Si surface without following a complicated photolithography process, unlike in case of the conventional RIE system. The size of the texture structure increased with the RIE process time. However, after a process time of 60 min, the size of the structure did not increase but tended to saturate. When the RF power increased from 200 to 250 W, the size of the pyramidal texture structure increased from 0.45 to 0.8 ㎛. The SERS response characteristics were measured by depositing approximately 1.5 ㎛ of nanoporous Ag metal thin film through cluster sputtering on the formed texture structure by varying the RIE process conditions. The Raman signal strength of the nanoporous Ag metal thin film deposited on the Si substrate with the texture structure was higher than that deposited on the general silicon substrate by up to 19%. The Raman response characteristics were influenced by the pyramid size and the number of pyramids per unit area but appeared to be influenced more by the number of pyramids per unit area. Therefore, further studies are required in this regard.

• Korean Journal of Microbiology
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• v.53 no.2
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• pp.71-78
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• 2017

Raman microspectroscopy is a promising tool for microbial analysis at single cell level since it can rapidly measure the cell materials including lipids, nucleic acids, and proteins by measuring the inelastic scattering of a molecule irradiated by monochromatic lights. Using Raman spectra provides high specificity and sensitivity in classification of bacteria at the strain level. In addition, a Raman approach coupled with stabled isotope such as $^{13}C$ and $^2H$ is able to detect and quantify general metabolic activity at single cell level. After bacterial detection process by Raman microspectroscopy, interested unculturable cell sorting and single cell genomics can be accomplished by combination with optical tweezer and microfluidic devices. In this review, the characteristics and applications of Raman microspectroscopy were reviewed and summarized in order to provide a better understanding of microbial analysis using Raman spectroscopy.

• Journal of the Microelectronics and Packaging Society
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• v.23 no.4
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• pp.19-24
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• 2016

Along the few nano sizing dimensions of integrated circuit (IC) devices, acceptable interlayer material for design is inevitable. The interlayer which include dielectric, interconnect, barrier etc. needs to achieve not only electrical properties, but also mechanical properties for endure post manufacture process and prolonging life time. For developing intermetallic dielectric (IMD) the mechanical issues with post manufacturing processes were need to be solved. For analyzing specific structural problem and material properties Raman spectroscopy was performed for various researches in Si semiconductor based materials. As improve of the laser and charge-coupled device (CCD) technology the total effectiveness and reliability was enhanced. For thin film as IMD developed material could be analyzed by Raman spectroscopy, and diverse researches of developing method to analyze thin layer were comprehended. Also In-situ analysis of Raman spectroscopy is introduced for material forming research.

• The Bulletin of The Korean Astronomical Society
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• v.43 no.1
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• pp.63.4-64
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• 2018

High resolution spectroscopy of the yellow symbiotic star AG Draconis is performed with the Canada-France-Hawaii Telescope to analyse the line profiles of Raman scattered O VI broad emission features at $6825{\AA}$ and $7082{\AA}$ with a view to investigating the wind accretion process from the mass losing giant to the white dwarf. These two spectral features are formed through inelastic scattering of O $VI{\lambda}{\lambda}32$ and 1038 with atomic hydrogen. We find that these features exhibit double-component profiles with red parts stronger than blue ones with the velocity separation of ~ 60 km s-1 in the O VI velocity space. Monte Carlo simulations for O VI line radiative transfer are performed by assuming that the O VI emission region constitutes a part of the accretion flow around the white dwarf and that Raman O VI features are formed in the neutral part of the slow stellar wind from the giant companion. The overall Raman O VI profiles are reasonably fit with an azimuthally asymmetric accretion flow and the mass loss rate ~ 4 ${\times}$ 10^{-7} M_sun yr^{-1}. We also find that additional bipolar neutral regions moving away with a speed ~ 70 km s^{-1} in the directions perpendicular to the orbital plane provide considerably improved fit to the red wing parts of Raman features.