• Title/Summary/Keyword: Raman process

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Effect of Ammonia on Alignment of Carbon Nanotubes in Thermal Chemical Vapor Deposition (촉매 금속을 이용한 열화학 기상 증착법에서 탄소 나노튜브의 수직배향 합성에 대한 암모니아의 역할)

  • Hong, Sang-Yeong;Jo, Yu-Seok;Choe, Gyu-Seok;Kim, Do-Jin;Kim, Hyo-Jin
    • Korean Journal of Materials Research
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    • v.11 no.8
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    • pp.697-702
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    • 2001
  • Effects of ammonia treatment on the morphologies of the catalytic metal films and carbon nanotubes subsequently synthesized via a thermal chemical vapor deposition method were investigated. An optimally controlled thermo-chemical process of ammonia treatment gave rise to a morphology of a dense distribution of vertically aligned carbon nanotubes. $NH_3$ treatment is a crucial key process to obtain vertically aligned carbon nanotubes. However, it was realized by a simple $NH_3$ treatment during synthesis at temperatures of $800-900^{\circ}C$ without any extra process. The structure and morphology of carbon nanotubes were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), and Raman spectroscopy.

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Vertically Standing Graphene on Glass Substrate by PECVD

  • Ma, Yifei;Hwang, Wontae;Jang, Haegyu;Chae, Heeyeop
    • Proceedings of the Korean Vacuum Society Conference
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    • 2014.02a
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    • pp.232.2-232.2
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    • 2014
  • Since its discovery in 2004, graphene, a sp2-hybridized 2-Dimension carbon material, has drawn enormous attention. A variety of approaches have been attempted, such as epitaxial growth from silicon carbide, chemical reduction of graphene oxide and CVD. Among these approaches, the CVD process takes great attention due to its guarantee of high quality and large scale with high yield on various transition metals. After synthesis of graphene on metal substrate, the subsequent transfer process is needed to transfer graphene onto various target substrates, such as bubbling transfer, renewable epoxy transfer and wet etching transfer. However, those transfer processes are hard to control and inevitably induce defects to graphene film. Especially for wet etching transfer, the metal substrate is totally etched away, which is horrendous resources wasting, time consuming, and unsuitable for industry production. Thus, our group develops one-step process to directly grow graphene on glass substrate in plasma enhanced chemical vapor deposition (PECVD). Copper foil is used as catalyst to enhance the growth of graphene, as well as a temperature shield to provide relatively low temperature to glass substrate. The effect of growth time is reported that longer growth time will provide lower sheet resistance and higher VSG flakes. The VSG with conductivity of $800{\Omega}/sq$ and thickness of 270 nm grown on glass substrate can be obtained under 12 min growing time. The morphology is clearly showed by SEM image and Raman spectra that VSG film is composed of base layer of amorphous carbon and vertically arranged graphene flakes.

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High Quality Non-Transfer Single-Layer Graphene Process Grown Directly on Ti(10 nm)-Buffered Layer for Photo Lithography Process (포토 리소그래피 공정을 위한 Ti(10 nm)-Buffered층 위에 직접 성장된 고품질 무전사 단층 그래핀 공정)

  • Oh, Keo-Ryong;Han, Yire;Eom, Ji-Ho;Yoon, Soon-Gil
    • Journal of the Korean Institute of Electrical and Electronic Material Engineers
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    • v.34 no.1
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    • pp.21-26
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    • 2021
  • Single-layer graphene is grown directly on Ti-buffered SiO2 at 100℃. As a result of the AFM measurement of the Ti buffer layer, the roughness of approximately 0.2 nm has been improved. Moreover, the Raman measurement of graphene grown on it shows that the D/G intensity ratio is extremely small, approximately 0.01, and there are no defects. In addition, the 2D/G intensity ratio had a value of approximately 2.1 for single-layer graphene. The sheet resistance is also 89 Ω/□, demonstrating excellent characteristics. The problem was solved by using graphene and a lift-off patterning method. Low-temperature direct-grown graphene does not deteriorate after the patterning process and can be used for device and micro-patterning research.

Characterization of nano-structure pyrolytic char for smart and sustainable nanomaterials

  • N. K. Karthikeyan;S. Elavenil
    • Advances in nano research
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    • v.16 no.1
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    • pp.53-69
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    • 2024
  • Advancements in the technology of building materials has led to diverse applications of nanomaterials with the aim to monitor concrete structures. While there are myriad instances of the use of nanoparticles in building materials, the production of smart nano cement-composites is often expensive. Thereupon, this research aims to discover a sustainable nanomaterial from tyre waste using the pyrolysis process as part of the green manufacturing circle. Here, Nano Structure Tyre-Char (NSTC) is introduced as a zero-dimension carbon-based nanoparticle. The NSTC particles were characterized using various standard characterization techniques. Several salient results for the NSTC particles were obtained using microscopic and spectroscopic techniques. The size of the particles as well as that of the agglomerates were reduced significantly using the milling process and the results were validated through a scanning electron microscope. The crystallite size and crystallinity were found to be ~35nm and 10.42%, respectively. The direct bandgap value of 5.93eV and good optical conductivity at 786 nm were obtained from the ultra violet visible spectroscopy measurements. The thermal analysis reveals the presence of a substantial amount of carbon, the rate of maximum weight loss, and the two stages of phase transformation. The FT-Raman confirms the presence of carboxyl groups and a ID/IG ratio of 0.83. Water contact angle around 140° on the surface implies the highly hydrophobic nature of the material and its low surface energy. This characteristic process assists to obtain a sustainable nanomaterial from waste tyres, contributing to the development of a smart building material.

Crystal growth of ring-shaped SiC polycrystal via physical vapor transport method (PVT 방법에 의한 링 모양의 SiC 다결정 성장)

  • Park, Jin-Yong;Kim, Jeong-Hui;Kim, Woo-Yeon;Park, Mi-Seon;Jang, Yeon-Suk;Jung, Eun-Jin;Kang, Jin-Ki;Lee, Won-Jae
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.30 no.5
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    • pp.163-167
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    • 2020
  • Ring-shaped SiC (Silicon carbide) polycrystals used as an inner material in semiconductor etching equipment was manufactured using the PVT (Physical Vapor Transport) method. A graphite cylinder structure was placed inside the graphite crucible to grow a ring-shaped SiC polycrystal by the PVT method. The crystal polytype of grown crystal were analyzed using a Raman and an UVF (Ultra Violet Fluorescence) analysis. And the microstructure and components of SiC crystal were identified by a SEM (Scanning Electron Microscope) and EDS (Energy Disruptive Spectroscopy) analyses. The grain size and growth rate of SiC polycrystals fabricated by this method was varied with temperature variation in the initial stage of growth process.

Relationship between Structural Stability and Crystallinity in Layered Manganese Oxide (층상구조 망간산화물에서의 구조적 안정도와 결정성과의 관계)

  • Hwang, Seong-Ju
    • Journal of the Korean Chemical Society
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    • v.48 no.1
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    • pp.46-52
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    • 2004
  • The effect of crystallinity on the structural stability of layered manganese oxide has been systematically investigated. While well-crystalline manganate was prepared by solid-state reaction-ion exchange method, nanocrystalline one was obtained by Chimie-Douce reaction at room temperature. According to micro-Raman and Mn K-edge X-ray absorption spectroscopic results, manganese ions in both the manganese oxides are stabilized in the octahedral sites of the layered lattice consisting of edge-shared MnO6 octahedra. The differential potential plot clarifies that the layered structure of nanocrystalline material is well maintained during electrochemical cycling, in contrast to the well-crystalline homologue. From the micro-Raman results, it was found that delithiation-relithiation process for well-crystalline material gives rise to the structural transition from layered to spinel-type structure. On the basis of the present experimental findings, it can be concluded that nanocrystalline nature plays an important role in enhancing the structural stability of layered manganese oxides.

Effect of Chemical Vapor Deposition Condition on the Growth of SiC Thin Films (화학기상증착조건이 SiC 박막의 성장에 미치는 영향)

  • Bang, Wook;Kim, Hyeong-Joon
    • Korean Journal of Crystallography
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    • v.3 no.2
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    • pp.98-110
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    • 1992
  • B-SiC thin films were fabricated on Si(100) substrate under 1 atom by fVD. The effects of deposition conditions on the growth and the properties especially crystallinity and prefer ential alignment of these thin films were investigated. SiH4 and CH4 were used as source gases and H2 as Carrier gas. Th9 growth Of B-SiC thin films with changing parameters such as the growth temperature, the ratio of source gases (SiH4/CH4 ) and the total amount of source gases. The grown thin films were characterized by using SEM, a -step, XRD, Raman Spectro- scopy and TEM. Chemical conversion process improved the quality of thin films due to the formation of SiC buffer layer. The crystallinity of SiC thin films was improved when the growth temperature was higher than l150t and the amount of CH4 exceeded that of SiH4. The better crystallinity, the better alignment to the crystalline direction of substates. TEM analyses of the good quality thin films showed that the grain size was bigger at the surface than at the interface and the defect density is not depend on the ratio of the source gases.

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Crystal structure investigation of AlN crystal grown on 6H-SiC seed by a physical vapor transport method (6H-SiC 종자 결정을 사용하여 PVT법으로 성장된 AlN 결정 연구)

  • Shin, Hee-Won;Lee, Dong-Hoon;Kim, Hwang-Ju;Park, Mi-Seon;Jang, Yeon-Suk;Lee, Won-Jae;Kim, Jung-Gon;Jeong, Seong-Min;Lee, Myung-Hyun;Seo, Won-Seon
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.26 no.1
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    • pp.49-52
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    • 2016
  • The effect of process parameters such as the growth pressure and temperature on the AlN crystal growth has been investigated. AlN crystal was grown onto 6H-SiC seed crystal using PVT (Physical Vapor Transport) method. Crystal properties and morphology of AlN crystal was changed with growth pressure and temperature. Raman analysis confirmed that AlN crystals with different orientation were successfully grown on SiC seed crystal.

Exciton reflection and $A_{EP}$ line of 2H-$PbI_2$ single crystal (2H-$PbI_2$ 단결정의 엑시톤 반사 및 $A_{EP}$선에 관한 연구)

  • 김현철;송인걸;유종인;유연석;나훈균
    • Korean Journal of Optics and Photonics
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    • v.7 no.3
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    • pp.227-231
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    • 1996
  • The reflection spectrum of a $2H-PbI_2$ single crystal grown by vapour phase method were measured at 10 K near the fundamental absorption edge. The n= 1,2,3 Wannier exciton series and $A_{EP}$ reflection line were obtained from the reflection spectrum. Based on the 2nd phonon energy in the Raman spectrum, which is different from Nagamune's report, we suggest that $A_{EP}$ line is due to the bound state between the n=2 exciton and the 2nd phonon which surmise that this is LO phnon due to the second Raman process. The L-T splitting energy of n=1 exciton line was 6.56 meV and was consistent with the emission spectrum. The temperature dependence of the reflection spectrum showed that n=1 exciton peak was shifted to longer wavelength while, as the temperatre is raised, the sharpness of that with the increase of the L-T splitting energy decrease. From Wannier exiton series, the exciton binding energy and exciton radius was 30 meV and 14$\AA$, respectively.

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Synthesis of carbon nanosheets using RF thermal plasma (유도 열플라즈마를 이용한 카본나노시트 합성)

  • Lee, Seung-Yong;Ko, Sang-Min;Koo, Sang-Man;Hwang, Kwang-Taek;Han, Kyu-Sung;Kim, Jin-Ho
    • Journal of the Korean Crystal Growth and Crystal Technology
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    • v.24 no.5
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    • pp.207-212
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    • 2014
  • An ultrathin sheet-like carbon nanostructure provides an important model of a two-dimensional graphite structure with strong anisotropy in physical properties. As an easy and cheap route for mass production, RF thermal plasma synthesis of freestanding carbon nanosheet from $CH_4$ (Methane) and $C_3H_8$ (Propane) is presented. Using vapor synthesis process with RF inductively thermal plasma, carbon nanosheets were obtained without catalysts and substrates. The synthesized carbon nanosheets were characterized using transmission electron microscopy (TEM), Raman spectroscopy, X-ray diffraction (XRD) and Brunauer-Emmett-Teller (BET) analysis. The carbon nanosheets synthesized using methane and propane generally showed 5~6 and 15~16 layers with a wrinkled morphology and size of approximately 100 nm.