• Korean Journal of Materials Research
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• v.28 no.5
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• pp.279-285
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• 2018

Graphene is an interesting material because it has remarkable properties, such as high intrinsic carrier mobility, good thermal conductivity, large specific surface area, high transparency, and high Young's modulus values. It is produced by mechanical and chemical exfoliation, chemical vapor deposition (CVD), and epitaxial growth. In particular, large-area and uniform single- and few-layer growth of graphene is possible using transition metals via a thermal CVD process. In this study, we utilize polystyrene and boron oxide, which are a carbon precursor and a doping source, respectively, for synthesis of pristine graphene and boron doped graphene. We confirm the graphene grown by the polystyrene and the boron oxide by the optical microscope and the Raman spectra. Raman spectra of boron doped graphene is shifted to the right compared with pristine graphene and the crystal quality of boron doped graphene is recovered when the synthesis time is 15 min. Sheet resistance decreases from approximately $2000{\Omega}/sq$ to $300{\Omega}/sq$ with an increasing synthesis time for the boron doped graphene.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.7-12
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• 2010

Field-emission characteristics of carbon nanotubes(CNTs), which were grown on conical-type tungsten micro-tips by using an electrophoretic deposition(EPD) method, were examined. The EPD method proved to be convenient to manipulate and arrange CNTs from well dispersed suspensions onto such tip-type substrates. The growth rate of CNTs was proportional to the applied d.c. bias voltage and the process time. It was observed from the Raman study that the EPDproduced CNTs showed better crystal qualities with the Raman intensity ratio( $I_D$/$I_G$) of 0.41-0.42 than the CVD-produced CNTs and their crystal qualities could be further improved by thermal annealing. The electron emitters based on the EPDCNTs showed excellent field emission properties, such as the threshold voltage for electron emission of about 620 V and the maximum emission current of about 345 ${\mu}A$. In addition, the EPD-CNTs exhibited the stable long-term(up to 40 h) emission capability and the emission stability was enhanced by thermal annealing.

• Proceedings of the Korean Vacuum Society Conference
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• 2000.02a
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• pp.213-213
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• 2000

Direct laser vaporization of transition-metal(Co, Ni)/graphite composite pellet produced single wall carbon naotubes(SWNT) in the condensing vapor in a heated flow cylinder-type tube furnace, Transition metal/graphite composite pellet target was made by mixing graphite, Co, and Ni in 98:1:1 atomic weight ratios, pressing the mixed powder, and curing it. The target was placed in a tube furnace maintained at 1200$^{\circ}C$ and Ar inert collision gas continuously flowed into the tube. The 2nd harmonic, 532nm wavelength light from Nd-YAG laser was used to vaporize the tube. The carbon nanotubes produced by the laser vaporization were accumulated on quartz tube wall. The raw carbon nanotube materials were purified with surfactants(Triton X-100) in a ultrasonicator. These carbon nanotubes were analyzed using SEM, XRD, and Raman spectroscopic method. The carbon nanotube growth on the Ni-patterned Si substrate was investigated by the CVD process. Transition-metal, Ni and CH4 gas were used as a catalyst and a reactant gas, respectively. The structure and the phonon frequencies of the carbon nanotubes formed on the patterned Si substrate were measured by SEM and Raman spectrometer.

• Korean Journal of Materials Research
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• v.18 no.10
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• pp.552-556
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• 2008

Modified thermal annealing was applied to the activation of the polycrystalline silicon films doped as p-type through implantation of $B_2H_6$. The statistical design of experiments was successfully employed to investigate the effect of rapid thermal annealing on activation of polycrystalline Si doped as p-type. In this design, the input variables are furnace temperature, power of halogen lamps, and alternating magnetic field. The degree of ion activation was evaluated as a function of processing variables, using Hall effect measurements and Raman spectroscopy. The main effects were estimated to be furnace temperature and RTA power in increasing conductivity, explained by recrystallization of doped ions and change of an amorphous Si into a crystalline Si lattice. The ion activation using rapid thermal annealing is proven to be a highly efficient process in low temperature polycrystalline Si technology.

• Korean Journal of Metals and Materials
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• v.48 no.7
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• pp.660-666
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• 2010

30 nm thick Ni layers were deposited on a glass substrate by e-beam evaporation. Subsequently, 30 nm or 60 nm ${\alpha}-Si:H$ layers were grown at low temperatures ($<220^{\circ}C$) on the 30 nm Ni/Glass substrate by catalytic CVD (chemical vapor deposition). The sheet resistance, phase, microstructure, depth profile and surface roughness of the $\alpha-Si:H$ layers were examined using a four-point probe, HRXRD (high resolution Xray diffraction), Raman Spectroscopy, FE-SEM (field emission-scanning electron microscopy), TEM (transmission electron microscope) and AES depth profiler. The Ni layers reacted with Si to form NiSi layers with a low sheet resistance of $10{\Omega}/{\Box}$. The crystallinty of the $\alpha-Si:H$ layers on NiSi was up to 60% according to Raman spectroscopy. These results show that both nano-scale NiSi layers and crystalline Si layers can be formed simultaneously on a Ni deposited glass substrate using the proposed low temperature catalytic CVD process.

• Journal of Industrial and Engineering Chemistry
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• v.68
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• pp.153-160
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• 2018

An environmentally favorable (chlorine-free) solid oxidizer, guanidinium dinitramide [GDN; $NH_2C(NH_2)NH_2N(NO_2)_2$], was newly synthesized from guanidine carbonate [$NH_2C(=NH)NH_2{\cdot}1/2H_2CO_3$]. Two different crystalline forms (${\alpha}-type$ and ${\beta}-type$) appeared according to the applied solvents and synthesis conditions. Moisture, during extraction, might become trapped in a crystal between inner molecules. Therefore, despite having the same chemical composition, Raman-IR and TGA-DSC revealed different physical characteristics of the two forms. Peaks of Raman shift near $1000cm^{-1}$ implied different chemical structures. Thermal analysis revealed an exothermic temperature $155.7^{\circ}C$ for ${\alpha}-type$ but one of $191.6^{\circ}C$ for ${\beta}-type$. The caloric value of ${\alpha}-type$ was 536.4 J/g, which was 2.5 times larger than that of the ${\beta}-type$, which was 1310 J/g. While the synthesized GDN of ${\alpha}-type$ showed a steep exothermic decomposition, the ${\beta}-type$ was slowly decomposed after melting through an endothermic process. This work implied that despite of the same molecular formula some different core thermal properties would appear depending on synthesis conditions.

• Journal of the Semiconductor & Display Technology
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• v.9 no.2
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• pp.1-6
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• 2010

Star-like ZnO nanostructures were grown on SI(100) substrates with carbon(C) catalyst by employing vapor-solid(VS) mechanism. The morphologies and structure of ZnO nanostructures were investigated by Field emission scanning electron microscopy (FESEM), X-ray diffraction (XRD) and Raman spectrum, Photoluminescence spectrum. The results demonstrated that the as-synthesized products consisted of star-like ZnO nanostructure with hexagonal wurtzite phase. Nanostructures grown at 1100 were mainly star-like in structure with diameters of 500 nm. The legs of the star-like nanostructures were preferentially grown up along the [0001] direction. A vapor.solid (VS) growth mechanism was proposed to explain the formation of the star-like structures. Photoluminescence spectrum exhibited a narrow emission band peak around 380 nm and a broad one around 491 nm. Raman spectrum of the ZnO nanostructures showed oxygen defects in ZnO nanostructures due to the existence of Ar gas during the growth process, leading to the dominant green band peak in the PL spectrum.

• Applied Science and Convergence Technology
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• v.24 no.4
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• pp.117-124
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• 2015

A direct growth method of graphene on insulating substrate without catalyst etching and transfer process was developed using Au/Ni/a-C catalyst system. During the growth process, behavior of the Au/Ni catalyst was investigated using EDX, XPS, SEM, and Raman spectroscopy. The Au/Ni catalyst layer was evaporated during growth process of graphene. The graphene film was composed mono-layer flakes. The transmittance of the graphene film was ~80.6%.

• Journal of the Korean Society for Precision Engineering
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• v.27 no.7
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• pp.49-54
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• 2010

The cryogenic ball milling was performed on carbon nanotubes (CNTs) at an extremely low temperature to increase the dispersion of CNTs. The effects of milling speed and time on the deagglomeration and structural changes of CNTs were studied. FESEM was used to analyze the dispersion and the change of particle size before and after milling process. Transmission electron microscopic (TEM) analysis was also investigated the effect of cryogenic ball milling on the morphological characteristics of CNTs. The structural changes by the cryogenic ball milling process were further confirmed by x-ray diffraction (XRD) and Raman spectroscopic analysis. The results showed that the agglomeration of CNTs was significantly reduced and amorphous structure was observed at high milling speed. However, the milling time has no great effect on the dispersion property and structural change of CNTs compared with milling speed.

• Journal of Powder Materials
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• v.9 no.2
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• pp.103-109
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• 2002

To investigate the fabrication possibility of a polymer particle dispersed metal matrix composite, polytetrafluorothylene (PTFE) particles were incorporated into the Al by the powder metallurgy process. The characteristics of a PTFE/Al composite were evaluated by measuring the density and hardness, and analysis of XRD, FT-Raman and microstructure. And wear properties of these composites were evaluated under the dry wear condition. It was possible to obtain the PTFE particles stably dispersed Al matrix composites by the hot press process at the sintering temperature of $500^{\circ}C$. The wear coefficient of a PTFE/Al compoite decreased with increasing of the volume fraction of PTFE. The wear weight of a PTFE/Al composite increased with increasing of the volume fractionof PTFE in the range of 0~10 vol.%PTFE, and showed maximum value at 10 vol.%PTFE, and then decreased at 20vol.%PTFE.