• Transactions of the Korean hydrogen and new energy society
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• v.10 no.4
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• pp.197-210
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• 1999

The hydrogen storage performance and electrochemical properties of $Zr_{1-X}Ti_X(Mn_{0.2}V_{0.2}Ni_{0.6})_{1.8}$(X=0.0, 0.2, 0.4, 0.6) alloys are investigated. The relationship between discharge performance and alloy characteristics such as P-C-T characteristics and crystallographic parameters is also discussed. All of these alloys are found to have mainly a C14-type Laves phase structure by X-ray diffraction analysis. As the mole fraction of Ti in the alloy increases, the reversible hydrogen storage capacity decreases while the equilibrium hydrogen pressure of alloy increases. Furthermore, the discharge capacity shows a maxima behavior and the rate-capability is increased, but the cycling durability is rapidly degraded with increasing Ti content in the alloy. In order to analyze the above phenomena, the phase distribution, surface composition, and dissolution amount of alloy constituting elements are examined by S.E.M., A.E.S. and I.C.P. respectively. The decrease of secondary phase amount with increasing Ti content in the alloy explains that the micro-galvanic corrosion by multiphase formation is little related with the degradation of the alloys. The analysis of surface composition shows that the rapid degradation of Ti-substituted Zr base alloy electrode is due to the growth of oxygen penetration layer. After comparing the radii of atoms and ions in the electrolyte, it is clear that the electrode surface becomes more porous, and that is the source of growth of oxygen penetration layer while accelerating the dissolution of alloy constituting elements with increasing Ti content. Consequently, the rapid degradation (fast growth of the oxygen-penetrated layer) with increasing Ti substitution in Zr-based alloy is ascribed to the formation of porous surface oxide through which the oxygen atom and hydroxyl ion with relatively large radius can easily transport into the electrode surface.

• 한국연소학회:학술대회논문집
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• 2006.10a
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• pp.187-195
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• 2006

In this work, we introduce a newly constructed arc-jet device of 150 kW input power. The design of this device is a Huels type with a narrow downstream electrode. General features of this device are first described. From the measured values of electrical power input, heat discharged into cooling water, gas flow rate, and settling chamber pressure, average enthalpy was determined using the heat balance and sonic throat methods. Using the settling chamber pressure and average enthalpy values, the flow properties in the nozzle and the heat transfer rate to the stagnation point of a blunt body are calculated accounting for thermochemical nonequilibrium. The envelope of enthalpy, pressure, degree of dissociation, and heat transfer rate are presented. Stagnation temperature is predicted to be between 4630 to 6050 $^{\circ}K$, and the stagnation point heat transfer rate is predicted to be between 175 and 318 W/$cm^{2}$ for a blunt body of 3 mm nose radius. Degree of dissociation in the stagnation region of the blunt body exceeds 30%.

• Journal of the Semiconductor & Display Technology
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• v.9 no.4
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• pp.87-91
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• 2010

Charged micro-particles are widely used as the key components for many electrical applications such as an e-paper, a touch panel, a printer toner and an electronic ink. Among them, the e-paper is an emerging reflective type display using the charged particles that has the advantages of the extremely low power consumption and sunlight readability. To create images on the e-paper, we confine black positively-charged and white negatively-charged particles between bottom and top electrodes and selectively apply the electric field. When the Coulomb force by an applied electric field is greater than the adhesion force between the charged particle and the electrode, the particles' transition happens resulting in the change of color between black and white. Therefore, the adhesion force is a very important factor for designing and estimating e-paper's operation. In this study, we constructed a basic model for particle's transition and an adhesion force equation describing particle's transition with three different forces: electrostatic image force, Van der Waals force and gravitational force. The simulation results showed that the gravitational force is negligible for the interesting range for the charge and the radius, and the adhesion force can be strongly dependent on the particle's charge and radius.

• Journal of Electrical Engineering and Technology
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• v.12 no.2
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• pp.858-864
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• 2017

This study aims to restrain free conducting wire-type particles which are commonly and dangerously existing within DC gas-insulated transmission lines. A realistic platform of a coaxial cylindrical electrode was established by using a high-speed camera and a partial discharge (PD) monitor to observe the motion, PD, and breakdown of these particles. The probabilities of standing or bouncing, which can be affected by the length of the particles, were also quantitatively examined. The corona images of the particles were recorded, and particle-triggered PD signals were monitored and extracted. Breakdown images were also obtained. The air-gap breakdown with the particles was subjected to mechanism analysis on the basis of stream theory. Results reveal that the lifting voltage of the wire particles is almost irrelevant to their length but is proportional to the square root of their radius. Short particles correspond to high bouncing probability. The intensity and frequency of PD and the micro-discharge gap increase as the length of the particles increases. The breakdown voltage decreases as the length of the particles decreases.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.154-154
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• 2012

Flexible complementary inverters based on thin-film transistors (TFTs) are important because they have low power consumption and high voltage gain compared to single type circuits. We have manufactured flexible complementary inverters using pentacene and amorphous indium gallium zinc oxide (IGZO) for the p-channel and n-channel, respectively. The circuits were fabricated on polyimide (PI) substrate. Firstly, a thin poly-4-vinyl phenol (PVP) layer was spin coated on PI substrate to make a smooth surface with rms surface roughness of 0.3 nm, which was required to grow high quality IGZO layers. Then, Ni gate electrode was deposited on the PVP layer by e-beam evaporator. 400-nm-thick PVP and 20-nm-thick ALD Al2O3 dielectric was deposited in sequence as a double gate dielectric layer for high flexibility and low leakage current. Then, IGZO and pentacene semiconductor layers were deposited by rf sputter and thermal evaporator, respectively, using shadow masks. Finally, Al and Au source/drain electrodes of 70 nm were respectively deposited on each semiconductor layer using shadow masks by thermal evaporator. The characteristics of TFTs and inverters were evaluated at different bending radii. The applied strain led to change in voltage transfer characteristics of complementary inverters as well as source-drain saturation current, field effect mobility and threshold voltage of TFTs. The switching threshold voltage of fabricated inverters was decreased with increasing bending radius, which is related to change in parameters of TFTs. Throughout the bending experiments, relationship between circuit performance and TFT characteristics under mechanical deformation could be elucidated.