• 한국조명전기설비학회:학술대회논문집
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• 한국조명전기설비학회 2005년도 춘계학술대회논문집
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• pp.228-230
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• 2005

Magnetic field has been used to hold plasma at high temperature for a long time. Reverse field has shown unstable process. Using ratio frequency, the author could control the instability of the process and formed a stable erversed field.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2008년도 제35회 하계학술대회 초록집
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• pp.284-284
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• 2008

• 한국진공학회:학술대회논문집
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• 한국진공학회 2007년도 제33회 하계학술대회 초록집
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• pp.81-81
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• 2007

• 분석과학
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• 제15권2호
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• pp.108-114
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• 2002

고체 시료를 직접 분석하기 위하여 글로우 방전 원자 방출법을 이용한 새로운 장치를 개발하였다. 이 시스템은 기존의 gas-jet boosted nozzle을 개선한 새로운 방전 셀과 Radio-frequency 전원장치를 사용하였다. 기존의 gas-jet boosted nozzle의 경우 재침전이 적고, 시료 손실량이 많아서 낮은 방전 전력에서 저 합금강의 미량 분석에 적합하였다. 하지만 높은 방전 전력을 사용할 경우 시료 손실량이 많아지고, 재석출(redeposition)이 증가함으로 해서 플라스마가 불안정해지는 단점을 지니고 있었다. 기존의 글로우 방전 셀의 경우 방전 전력을 높일 수록 플라스마의 들뜸 온도가 증가하는 경향을 가진다. 이 때문에 높은 방전 전력에서는 플라스마의 온도가 높아져서 극미량 분석이 가능할 수 있지만, 기존의 노즐 부분에 문제점으로 인해 높은 방전 전력으로 분석하기에는 부적합하였다. 이러한 문제점을 modified gas-jet boosted nozzle은 시료 손실량이 같은 방전 전력에서 기존의 가스 제트 흐름노즐에 비하여 감소하지만 높은 방전 전력에서는 플라스마 안정도가 증가하여 극미량 분석이 가능하도록 개선하였다. 본 시스템은 여러 가지 방전에 미치는 실험 변수인 압력과 가스 흐름량 그리고 방전 전력의 변화에 따른 시료 손실 속도와 방출 세기 등의 변화를 측정하여 최적화 하였으며, 표준 시료 Fe합금을 이용하여서 미량 분석을 하였다.

• Transactions on Electrical and Electronic Materials
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• 제12권4호
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• pp.156-159
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• 2011

SiNx:H films have been widely used for anti-reflection coatings and passivation for crystalline silicon solar cells. In this study, SiNx:H films were deposited using high frequency (13.56 MHz) direct plasma enhanced chemical vapor deposition, and the optical and passivation properties were investigated. The radio frequency power, the spacing between the showerhead and wafer, the $NH_3/SiH_4$ ratio, the total gas flow, and the $N_2$ gas flow were changed over certain ranges for the film deposition. The thickness uniformity, the refractive index, and the minority carrier lifetime were then measured in order to study the properties of the film. The optimal deposition conditions for application to crystalline Si solar cells are determined from the results of this study.

• Transactions on Electrical and Electronic Materials
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• 제12권5호
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• pp.209-212
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• 2011

Hafnium nitride (HfN) thin films were deposited onto a silicon substrate by inductive coupled nitrogen plasma-assisted radio frequency magnetron sputtering. The films were prepared without intentional substrate heating and a substrate negative bias voltage ($-V_b$) was varied from -50 to -150 V to accelerate the effects of nitrogen ions ($N^+$) on the substrate. X-ray diffractometer patterns showed that the structure of the films was strongly affected by the negative substrate bias voltage, and thin film crystallization in the HfN (100) plane was observed under deposition conditions of -100 $V_b$ (bias voltage). Atomic force microscopy results showed that surface roughness also varied significantly with substrate bias voltage. Films deposited under conditions of -150 $V_b$ (bias voltage) exhibited higher hardness than other films.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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• pp.611-615
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• 2004

In recent, there have been several developments in lamp technology that promise savings in electrical power consumption and improved quality of the lighting space. Above all, Electrodeless fluorescent lamp is the removal of internal electrodes and heating filaments that are a light-limiting factor of conventional fluorescent lamps. The electrodeless fluorescent lamp is intended as a high efficacy replacement for the incandescent reflector lamp in many applications. Therefore, the electrodeless fluorescent lamps is substantially higher than that of conventional fluorescent lamps and last up to 60,000 hours. In this paper, electron temperature and electron density were measured in a radio-frequency inductively coupled plasma using a Langmuir probe method for emission characteristics. Measurement was conducted in an argon discharge for pressure from 10 [mTorr] and input RF power 100 [W] to 150 [W]. As for the electron density, a electron temperature was more distinguished for a emission characteristic. The results of ideal may contribute to systematic understanding of a electrodeless fluorescent lamps of emission characteristics.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.480.1-480.1
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• 2014

In this study, we suggest the new emitter formation applied solid phase epitaxy (SPE) growth process using rapid thermal process (RTP). Preferentially, we describe the SPE growth of intrinsic a-Si thin film through RTP heat treatment by radio-frequency plasma-enhanced chemical vapor deposition (RF-PECVD). Phase transition of intrinsic a-Si thin films were taken place under $600^{\circ}C$ for 5 min annealing condition measured by spectroscopic ellipsometer (SE) applied to effective medium approximation (EMA). We confirmed the SPE growth using high resolution transmission electron microscope (HR-TEM) analysis. Similarly, phase transition of P doped a-Si thin films were arisen $700^{\circ}C$ for 1 min, however, crystallinity is lower than intrinsic a-Si thin films. It is referable to the interference of the dopant. Based on this, we fabricated 16.7% solar cell to apply emitter layer formed SPE growth of P doped a-Si thin films using RTP. We considered that is a relative short process time compare to make the phosphorus emitter such as diffusion using furnace. Also, it is causing process simplification that can be omitted phosphorus silicate glass (PSG) removal and edge isolation process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.419-422
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• 1991

A mathematical model was developed to predict the temperature, the density, and the velocity distribution of an inductively coupled thermal plasma. It was for an atmospheric pressure argon thermal plasma generated by a 4 MHz radio frequency power. It has been shown that the hottest region can be moved toward centrial region by applying an external magnetic field. Based on the results of the simulation. an ICP(Inductively Coupled thermal Plasma) system was constructed and thermal plasma was generated.

• 한국응용과학기술학회지
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• 제16권4호
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• pp.287-291
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• 1999

Plasma polymerization of Perfluoropropene(PFP) was carried out in a tubular type reactor. The Plasma was generated by coupling inductively under the fixed discharge power of 25W and the pressure of 100, 140, and 200 mTorr of radio frequency generator. PFP plasma polymerization thin films were deposited in acrylic yams. For 1 hours, the acrylic yams treated and untreated by PFP plasma were immersed in boiling water. Then the reduction of contraction coefficient of acrylic yams were measured respectively. As a result of this experiment, untreated acrylic yams were reduced around 23%, while treated yams were contracted about 18-2%.