• 공업화학
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• 제21권1호
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• pp.81-86
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• 2010

실리카 지지 루테늄과 철의 합금($Ru/Fe-SiO_2$) 시료에 일산화탄소(CO)를 흡착시켰을 때 Ru/Fe의 몰비 9/1 이상에서 다섯 적외선 흡수띠($2138.7{\sim}2142.5cm^{-1}$, $2067.3{\sim}2073.1cm^{-1}$, $1976.7{\sim}2017.2cm^{-1}$, $1737.9{\sim}1799.3cm^{-1}$, $1625.7cm^{-1}$)를 관찰했고, Ru/Fe의 몰비 8/2 이하에서 두 적외선 흡수띠($1934.0{\sim}1990.2cm^{-1}$, $1625.7cm^{-1}$)를 관찰했다. $2138.7{\sim}2142.5cm^{-1}$ 흡수띠, $2067.3{\sim}2073.1cm^{-1}$ 흡수띠, $1976.7{\sim}2017.2cm^{-1}$흡수띠는 Ru/Fe 뭉치 표면의 Ru 원자에 선형결합한 CO의 신축진동에 의한 것으로, $1774.2{\sim}1799.3cm^{-1}$ 흡수띠는 Ru/Fe 뭉치 표면의 Ru 원자와 다리결합하거나 높은 지수 평면에 있는 Ru 원자에 결합한 CO의 신축진동에 의한 것으로, $1934.0{\sim}1990.2cm^{-1}$ 흡수띠는 Ru/Fe 뭉치 표면의 Fe 원자에 선형결합한 CO의 신축진동에 의한 것으로 제시할 수 있다. $Ru/Fe-SiO_2$에서 CO를 흡착시켰을 때 Ru/Fe 몰비가 8/2 이하에서 증가할 때 CO가 Fe에 선형결합하여 생긴 $1934.0{\sim}1990.2cm^{-1}$ 흡수띠의 흡광도가 증가하였는데, 이 현상은 Ru/Fe 몰비가 8/2 이하에서 증가할 때 Ru/Fe 뭉치 표면에서 시료의 함량과 비교하여 Fe 농도가 증가했고 $Fe-SiO_2$ 시료와 비교하여 표면적이 Ru/Fe 몰비의 증가에 따라 점차 증가했기 때문으로 설명할 수 있다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2003년도 춘계학술발표강연 및 논문개요집
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• pp.120-120
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• 2003

MOCVD법으로 TiN 표면에 Ru을 증착함에 있어서 Ru의 핵생성을 고양시키기 위한 ECR plasma 전처리 세정이 필요하다. 본 연구에서는 Ru 증착시 ECR $H_2O$$_2$, AE Plasma 전처리 세정 효과를 SEM, AES, XRD로 분석하였다. Ru의 핵생성은 ECR H$_2$, Ar Plasma의 노출시간이 증가할수록 향상된 반면, ECR $O_2$ plasma의 경우 노출시간이 증가할수록 핵생성 효과는 감소하였다. H$_2$ plasma 내의 H$_2$ion은 Ti와 NH$_3$를 형성하기 위해서 TiN과 반응하여 TiN을 Ti로 개질 시켰으며, Ar plasma 전처리 세정하는 동안 Ar plasma 내의 Ar ion은 TiN 또는 TiON 표면의 질소와 산소원자를 제거하는 효과를 나타내었다. 그 결과 TiN 표면상에서도 Ru의 핵생성이 쉽게 이루어졌으며 H$_2$, Ar ECR Plasma 전처리 세정에서 RU 핵생성이 향상되는 결과를 얻었다. 세 종류의 plasma중에서 Ar ECR plasma로 전처리 세정한 경우에 가장 높은 Ru 핵생성 밀도를 얻을 수 있었다.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2009년도 춘계학술대회 논문집
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• pp.182-183
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• 2009

플라즈마 원자층 증착법을 이용하여 Ru-TiN 빅막을 합성하였다. 박막 내 Ru의 함량은 Ru의 unit-cycle의 수에 따라 선형적으로 증가하였으며, Ru 함량이 증가함에 따라 박막의 비저항을 $3700{\mu}{\Omega}{\cdot}cm$에서 $190{\mu}{\Omega}{\cdot}cm$까지 자유롭게 조절할 수 있었다. Ru의 함량이 0.40 이상인 경우, Ru과 TiN 두물질이 교차 증착되어 서로의 결정 성장을 충분히 억제함으로서, 비정질구조를 가짐을 확인할 수 있었다. 또한, $O_2$ 분위기에서 열처리를 진행한 결과, Ru의 조성비가 0.40이상인 경우 $700^{\circ}C$까지 면저항의 변화가 거의 없음을 확인할 수 있었다.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제53권4호
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• pp.208-212
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• 2004

In this paper, the characteristics of co-sputtered Ru-Zr metal alloy as gate electrode of MOS capacitors have been investigated. The atomic compositions of alloy were varied by using the combinations of relative sputtering power of Ru and .Zr. C-V and I-Vcharacteristics of MOS capacitors were measured to find the effective oxide thickness and work function. The alloy made of about 50% of Ru and 50% of Zr exhibited an adequate work function for nMOS. C-V and I-V measurements after 600 and $700^{\circ}C$ rapid thermal annealing were performed to prove the thermal and chemical stability of the Ru-Zr alloy film. Negligible changes in the accumulated capacitance and work function before and after annealing were observed. Sheet resistance of Ru-Zr alloy was lower than that of poly-silicon. It can be concluded that the Ru-Zr alloy can be a possible substitute for the poly-silicon used as a gate of nMOS.

• 대한금속재료학회지
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• 제47권6호
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• pp.349-355
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• 2009

In the solvent extraction of Ru(IV) with Alamine336, it was found that Ru took part in the reaction as $RuCl_{6}_^{2-}$ in the HCl concentration range of 1 to 5 M. Interaction parameter between hydrogen ion and $RuCl_{6}_^{2-}$ was estimated by applying Bromley equation to the extraction data. From the mixed solutions of Pd(II) and Ru(IV), the distribution coefficients of Pd were found to be higher than those of Ru in the experimental ranges. Separation factor between Pd and Ru rapidly increased with the decrease of Alamine336 concentration. About 60% of the Ru from the mixed solutions was extracted by TBP at 8.3 M HCl, while Pd was not extracted in the HCl concentration range of 1.6 to 8.3 M.

• Bulletin of the Korean Chemical Society
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• 제14권6호
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• pp.682-686
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• 1993

The syntheses and reactivities with olefins of $[Ru^{II}(L_3)(L_2)OH_2]^{2+}$ $[L_3$= 2,6-bis(N-pyrazolyl)pyridine(bpp), 2,6-bis(3,5-dimethyl-N-pyrazolyl)pyridine $(Me_4bpp);\;L_2$= 2,2'-bipyridine(bpy), 4,4'-dimethyl-2,2'-bipyridine $(Me_2bpy)$] are described. Their spectral and redox properties in aqueous solution were investigated. Evidence for each one electron redox process for the $Ru^{IV}-Ru^{III}$ and $Ru^{III}-Ru^{II}$ couples has been obtained. Oxidation of $[Ru^{II}(bpp)(bpy)OH_2]^{2+}$ with $Ce^{IV}$ gave $[Ru^{IV}(bpp)(bpy)O]^{2+}$. The $[Ru^{IV}$= 0 complex is paramagnetic $({\mu}_{eff}=2.82)$ and the complexes $[Ru(L_3)(L_2)OH_2]^{2+}$ are robust catalysts for the oxidation of styrene, cyclohexene, and cyclooctene with cooxidant such as NaOCl. Product distributions and selectivities are discussed by varying the number of the substituted-methyl group in the ring.

• 한국수소및신에너지학회논문집
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• 제30권3호
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• pp.193-200
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• 2019

$RuO_2$, $PtO_2$, and various $(Ru,Pt)O_2$ colloidal solution were prepared using modified Watanabe method. Electrodes were manufactured by dipping of Ni mesh into the colloidal solution. Manufactured electrodes were characterized by XRD, SEM, and EDS. $(Ru,Pt)O_2$ electrodes showed $RuO_2$ crystal structure and high roughness. The hydrogen evolution reaction (HER) activities were evaluated by Linear Sweep Voltammetry. 1Ru2Pt electrode showed similar activity with commercial electrode, HER potentials are -0.9 V for both.

• 한국전기전자재료학회논문지
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• 제15권12호
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• pp.1016-1020
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• 2002

Ru thin films were etched using CF/$_4$O$_2$ plasma in an ICP (inductively coupled plasma etching) system. The maximum etch rate of Ru thin films was 168 nm/min at a CF$_4$/O$_2$ gas mixing ratio of 10 %. The selectivity of SiO$_2$ over Ru was 1.3. From the OES (optical emission spectroscopy) analysis, the optical emission intensity of the O radical had a maximum value at 10% CF$_4$ gas concentration and drcrease with further addition of CF4 gas, but etch slope was enhanced. From XPS (x-ray photoelectron spectroscopy) analysis, the surface of the etched Ru thin film in CF$_4$/O$_2$ chemistry shows Ru-F bonds by the chemical reaction of Ru and F. RuF$_{x}$ compounds were suggested as a surface passivation layer that reduces the chemical reactions between Ru and O radicals. From a FE-SEM (field emission scanning electron microscope) micrograph, we had an almost perpendicular taper angle of 89$^{\circ}$.>.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2007년도 추계학술대회 논문집
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• pp.50-50
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• 2007

최근 DRAM 소자 내에서 Ruthenium (Ru) 은 높은 화학적 안정성, 누설전류에 대한 높은 저항성, 고유전체와의 높은 안정성등과 같은 특성으로 인해 금속층-유전막(insulator)-금속층 캐패시터에 대한 하부전극으로 각광받고 있다. 일반적으로 Ru은 화학적으로 매우 안정하여 습식 식각으로 제거하기 어려우며, 이로인해 건식 식각을 이용하여 Ru을 제거하는 것이 널리 통용되고 있다. 하지만 칵 캐패시터의 분리를 위해 Ru을 건식 식각할 경우, 유독한 $Ru0_4$ 가스가 발생할 수 있으며 Ru 하부전극의 탈균일한 표면과 몰드 산화막의 손실을 유발할 수 있다. 이로인해 각 캐패시터간의 분리와 평탄화를 위해 CMP 공정이 도입되게 되었다. 이러한 CMP 공정에 공급되는 슬러리에는 부식액, pH 적정제, 연마입자등이 첨가되는데 이때 연마입자가 응집하여 슬러리의 분산 안정성 저하에 영향을 줄 수 있다. 그리하여 본 연구에서는 Ru CMP Slurry에서의 surfactant와 같은 첨가제에 따른 zeta potential, particle size, sedimentation의 분석을 통해 slurry 안정성에 대란 영향을 살펴보았다. 또한 선택된 surfactant가 첨가된 Ru CMP Slurry를 제조하여 Ru의 removal rate와 TEOS에 대한 selectivity를 측정해 보았다.

• 한국재료학회:학술대회논문집
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• 한국재료학회 2011년도 춘계학술발표대회
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• pp.34.2-34.2
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• 2011

The demand for Ru has been increasing in the electronic, chemical and semiconductor industry. Chemical mechanical planarization (CMP) is one of the fabrication processes for electrode formation and barrier layer removal. The abrasive particles can be easily contaminated on the top surface during the CMP process. This can induce adverse effects on subsequent patterning and film deposition processes. In this study, a post Ru CMP cleaning solution was formulated by using sodium periodate as an etchant and citric acid to modify the zeta potential of alumina particles and Ru surfaces. Ru film (150 nm thickness) was deposited on tetraethylorthosilicate (TEOS) films by the atomic layer deposition method. Ru wafers were cut into $2.0{\times}2.0$ cm pieces for the surface analysis and used for estimating PRE. A laser zeta potential analyzer (LEZA-600, Otsuka Electronics Co., Japan) was used to obtain the zeta potentials of alumina particles and the Ru surface. A contact angle analyzer (Phoenix 300, SEO, Korea) was used to measure the contact angle of the Ru surface. The adhesion force between an alumina particle and Ru wafer surface was measured by an atomic force microscope (AFM, XE-100, Park Systems, Korea). In a solution with citric acid, the zeta potential of the alumina surface was changed to a negative value due to the adsorption of negative citrate ions. However, the hydrous Ru oxide, which has positive surface charge, could be formed on Ru surface in citric acid solution at pH 6 and 8. At pH 6 and 8, relatively low particle removal efficiency was observed in citric acid solution due to the attractive force between the Ru surface and particles. At pH 10, the lowest adhesion force and highest cleaning efficiency were measured due to the repulsive force between the contaminated alumina particle and the Ru surface. The highest PRE was achieved in citric acid solution with NaIO4 below 0.01 M at pH 10.