• Electrical & Electronic Materials
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• v.28 no.2
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• pp.25-33
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• 2015

Ruthenium (Ru) thin films were grown on thermally-grown $SiO_2$ substrates by atomic layer deposition (ALD) using a sequential supply of four kinds of novel zero-valent Ru precursors, isopropyl-methylbenzene-cyclohexadiene Ru(0) (IMBCHDRu, $C_{16}H_{22}Ru$), ethylbenzen-cyclohexadiene Ru(0) (EBCHDRu, $C_{14}H_{18}Ru$), ethylbenzen-ethyl-cyclohexadiene Ru(0) (EBECHDRu, $C_{16}H_{22}Ru$), and (ethylbenzene)(1,3-butadiene)Ru(0) (EBBDRu, $C_{12}H_{16}Ru$) and molecular oxygen (O2) as a reactant at substrate temperatures ranging from 140 to $350^{\circ}C$. It was shown that little incubation cycles were observed for ALD-Ru processes using these new novel zero-valent Ru precursors, indicating of the improved nucleation as compared to the use of typical higher-valent Ru precursors such as cyclopentadienyl-based Ru (II) or ${\beta}$-diketonate Ru (III) metallorganic precursors. It was also shown that Ru nuclei were formed after very short cycles (only 3 ALD cycles) and the maximum nuclei densities were almost 2 order of magnitude higher than that obtained using higher-valent Ru precursors. The step coverage of ALD-Ru was excellent, around 100% at on a hole-type contact with an ultra-high aspect ratio (~32) and ultra-small trench with an aspect ratio of ~ 4.5 (top-opening diameter: ~ 25 nm). The developed ALD-Ru film was successfully used as a seed layer for Cu electroplating.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.07a
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• pp.717-720
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• 2001

Ferroelectric lead ziroconate titanate (PZT) thin film were fabricated on the different bottom electrodes. Both Ru and Ru/RuO$_2$bottom electrodes were deposited by RF-magnetron sputteirng method. The structure phase and surface morphology of the PZT thin film were largely affected by the bottom electrode. It was observerd that used of Ru/RuO$_2$double electrode reduced leakage current and better ferroelectric properties compare with RuO$_2$bottom electrode. From these results, Ru/RuO$_2$hybride bottom electrode is thought to be the available structure for the bottom electrode.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.4
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• pp.281-288
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• 2001

PZT thin films (3500$\AA$) have been prepard on the Ru/Ru $O_2$ and Ru $O_2$ bottom electrodes with a RF magnetron sputtering system using P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ ceramic target. Ru/Ru $O_2$ bottom electrode was fabricated by in-situ processing controlled the $O_2$ partial pressure. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrode were preferred oriented (101) plane. The PZT thin films deposited on the Ru/Ru $O_2$ bottom electrodes showed better electrical properties than those with Ru $O_2$ bottom electrodes because Ru $O_2$ prevented oxygen vacancies and impurities from existing withing the interface and substrate.e.

• Journal of the Korean Electrochemical Society
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• v.14 no.2
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• pp.110-116
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• 2011

Ru black was used for cathode catalyst in polymer electrolyte membrane fuel cell which showed low performance at the initial test. However, it was observed that the performance of Ru black cathode was dramatically enhanced after certain kind of experiment compared with initial one. It might be due to an electrochemical treatment in which a voltage was applied to the Ru cathode for constant period time. When a constant potential of 0.1 V was applied to Ru cathode for 30 min, the fuel cell performance of Ru cathode showed the best results. In order to investigate the effect of electrochemical treatment on the performance enhancement, the characteristics of electrochemically treated Ru black was compared with that of Ru black which was reduced under $H_2$ atmosphere. From XRD results, it was turned out that Ru black was not completely converted to metallic Ru by electrochemical treatment, but it is sufficient to be one of reasons for the performance enhancement. According to the results of CO stripping voltammetry, it was observed that some Ru was removed from Ru electrode by electrochemical treatment which might have a bad effect on the fuel cell performance. The removal of some Ru from as-received Ru black by electrochemical treatment is also another reason for the enhancement of fuel cell performance.

• Corrosion Science and Technology
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• v.2 no.4
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• pp.189-193
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• 2003

The Ru etching using $O_2/C_{12}$ plasmas has been studied by employing the helicon etcher. The changes of Ru etch rate, Ru to $SiO_2$ etch selectivity and Ru electrode etching slope with varied process variables were investigated. The Ru etching slope at the optimized etching condition was measured to be $84^{\circ}$. We reveal that the Ru etching using $O_2/C_{12}$ plasma generates the $RuO_2$ thin film. Possible mechanism of Ru etching is discussed.

• Clean Technology
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• v.19 no.3
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• pp.320-326
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• 2013

Nano-sized PtRu-Ni/VC and PtRu-Sn/VC electrocatalysts were synthesized by a one-step radiation-induced reduction (RIR) (30 kGy) process using distilled water as the solvent and Vulcan XC-72 as the supporting material. The obtained electrocatalysts were characterized by transmission electron microscopy (TEM), scanning electron microscope energy dispersive spectroscopic (SEM-EDS), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS), respectively. The catalytic efficiency of electrocatalysts was examined for oxygen reduction, MeOH oxidation and CO stripping decreased in the following order, Hydrogen stripping : PtRu-Sn/VC > PtRu-Ni/VC > PtRu/VC$^{(R)}$ (E-TEK). MeOH oxidation : PtRu-Sn/VC > PtRu-Ni/VC > PtRu/ VC$^{(R)}$ (E-TEK). Unit cell performance : PtRu-Sn/VC > PtRu-Ni/VC > PtRu/VC$^{(R)}$ (E-TEK) catalysts.

• Journal of the Korean Electrochemical Society
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• v.7 no.4
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• pp.201-205
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• 2004

The Pt-Ru electrocatalyst was Prepared on Nafion membrane modified with Polypyrrole by chemical reduction of $H_2PtCI_6\;and\;RuCl_3$ solution ai precursor. From the electron dispersive microanalysis spectroscope(EDS), the Pt-Ru catalyst was located on the surface of Ppy/Nafion composite. The electrochemical oxidation of methanol on Pt-Ru catalyst deposited in Polypyrrole-impregnated Nafion was investigated by cyclic voltammetry (CV) and chronoamperometry. The onset potential of methanol oxidation was shifted to negative potential as the $RuCI_3$ concentration in deposition solution. Also, it was known that the Pt-Ru binary catalyst on Nafion could be directly deposited by using Polypyrrole and resulting Pt-Ru/PPy/Nafion was available for methanol oxidation.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.149-149
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• 2008

Metal-Insulator-Metal(MIM) capacitors have been studied extensively for next generation of high-density dynamic random access memory (DRAM) devices. Of several candidates for metal electrodes, Ru or its conducting oxide $RuO_2$ is the most promising material due to process maturity, feasibility, and reliability. ALD can be used to form the Ru and RuO2 electrode because of its inherent ability to achieve high level of conformality and step coverage. Moreover, it enables precise control of film thickness at atomic dimensions as a result of self-limited surface reactions. Recently, ALD processes for Ru and $RuO_2$, including plasma-enhanced ALD, have been studied for various semiconductor applications, such as gate metal electrodes, Cu interconnections, and capacitor electrodes. We investigated Ru/$RuO_2$ thin films by thermal ALD with various deposition parameters such as deposition temperature, oxygen flow rate, and source pulse time. Ru and $RuO_2$ thin films were grown by ALD(Lucida D150, NCD Co.) using RuDi as precursor and O2 gas as a reactant at $200\sim350^{\circ}C$.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.394-397
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• 2001

In this paper, in-situ deposited $Ru/RuO_2$ bottom electrodes have been investigated as new bottom electrodes for PZT thin film capacitor application. As a comparison, structural and electrical properties of PZT thin films on Pt/Ti and $RuO_2$ bottom electrodes are also investigated. The use of $Ru/RuO_2$ hybrid electrodes showed better electrical properties in compression with $RuO_2$ bottom electrode. With increasing Ru electrode thickness, the PZT thin films showed preferred orientation along the (110) direction and and leakage current of PZT thin films were improved. The PZT thin films on Ru (100nm)/$RuO_2$ electrodes exhibited excellent ferroelectric properties such as remant polarization and coercive field of $7.2C/cm^2$ and 46.35 kV/cm, respectively.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.05c
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• pp.58-62
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• 2002

Pb($Zr_{0.52}Ti_{0.48}$)$O_3$ (PZT) thin films deposited on the Pt/Ti and Ru/$RuO_2$ bottom electrode by rf magnetron sputtering methode. Ru/$RuO_2$ bottom electrode deposited on the p-type wafer as Ru thickness by in-situ process. Our results show that all PZT films indicated perovskite polycrystalline structure with perferred orientation (110) and no pyrochlore phase is observed. A well-fabricated $RuO_2$/PZT/Ru(100nm)/$RUO_2$ capacitor showed a leakage current density in the order of $2.13{\times}10^{-7}A/cm^2$ as 100 kV/cm, a remanent polarization of 7.20 ${\mu}C/cm^2$, and a coercive field of 58.37 kV/cm. The results show that the new Ru/$RuO_2$ bottom electrodes are expected to reduce the degradation ferroelectric fatigue and excellent ferroelectric properties.