• Journal of Internet Computing and Services
• /
• v.9 no.6
• /
• pp.117-125
• /
• 2008

With increase of concern about the Ubiquitous application, the necessity of the computer system which is miniaturized is becoming larger. The ARM processor is showing a high share from embedded system market. In this paper, ideal method for RTD-1000 controller construction and development is described using ARM microcontroller. Existing RTD-1000 measures distance of disconnection or defect of sensing casket by measuring receiving reflected wave which was sent via copper wire inside the leaking sensing rod. Using this RTD-1000, leakage and breakage of water and oil pipe can be sensed and it reports damage results to the networks. But, existing RTD-1000 wastes hardware resources much and costs a great deal to installation. Also, it needs a cooling device because the heating problem, and has some problem of the secondary memory unit such as the hard disk. So, long tenn maintenance has some problems in the outside install place. In this paper, for the resolving the problem of RTD-1000, RTD-1000A embedded system based on ARM is proposed and simulated.

• Journal of Korea Multimedia Society
• /
• v.14 no.8
• /
• pp.1041-1049
• /
• 2011

According to the development of society and infrastructure, effective underground facility management is growing more important them ever. In the process various monitoring systems are studied and developed for water works pipe-network. Especially, RTD-1000 system with the based on Pc. Reflector-monitoring device is constructed and steered by several local governments. But, this system have to be improved result from based on PC system structure at the point of resource management, heat, power consumption and size. In this paper, RTD-2000 is proposed are a substitution of improved RTD-1000 with many respect and portable one. This system is designed and implemented with ARM-9 development kit based on WinCE and LCD eliminate TDR(Time Domain Reflector-Meter). Various surveillance programs based on windows are mounted on RTD-1000 are replaced with dedicated embedded application softwares. Simulation and evaluation for performance comparison are performed for the prove of effectiveness of RTD-2000.

• Electrical & Electronic Materials
• /
• v.9 no.9
• /
• pp.911-917
• /
• 1996

Platinum thin films were deposited on Si-wafer by DC rnagnetron sputtering for RTD (resistance thermometer devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity and sheet resistivity were decreased with increasing the temperature of substrate and the annealing time at 1000.deg. C. At substrate temperature of >$300^{\circ}C$, input power of 7 w/cm$^{2}$, working vacuum of 5 mtorr and annealing conditions of 1000.deg. C and 240 min, we obtained 10.65.mu..ohm..cm, resistivity of Pt thin films and 3800-3900 ppm/.deg. C, TCR(temperature coefficient of resistance). These values are close to the bulk value. These results indicate that the Pt thin films deposited by DC magnetron sputtering have potentiality for the development of Pt RTD temperature sensor.

• Proceedings of the KIEE Conference
• /
• 1999.07d
• /
• pp.1806-1808
• /
• 1999

The electrical and physical characteristics of MgO and Pt thin-films on Si substrate, deposited by r.f magnetron sputtering. It were analyzed with annealing condition($1000^{\circ}C$ for 120 min) by four point probe, a-step, SEM and XRD. Until $1000^{\circ}C$ of annealing temperature, MgO medium layer had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-films and the resistivity of Pt thin-films was improved. In the analysis of properties of Pt-RTD, TCR value had $3927ppm/^{\circ}C$ and liner in the temperature range of room temperature ${\sim}400^{\circ}C$.

• Journal of the Korean Institute of Telematics and Electronics
• /
• v.27 no.9
• /
• pp.1409-1418
• /
• 1990

Characteristics of NMOS transistors with phosphorus source/drain junctions formed by two-step rapid thermal diffusion (RTD) process using a solid diffusion source have been investigated. Phosphorus profiles after RTD were measured by SIMS analysis. In the case of 1100\ulcorner, 10sec RTD of, P, the specific contact resistance of n+ Si-Al was 2.4x10**-7 \ulcorner-cm\ulcorner which is 1/5 of the As junction The comparison fo P junction devices formed by RTD and conventional As junction devices shows that both short channel effect and hot carrier effect of P junction devices are smaller than those of As junction devices when the devices have same junction depths. P junction device had maximum of 0.4 times lower Isub/Id than As junction device. Characteristics of P junction formed by several different RTD conditions have been compared and 1000\ulcorner RTD sample had the smaller hot carrier generation. Also, it has been shown that the hot carrier generation can be futher reduced by forming the P junctions by 3-step RTD which has RTO-driven-in process additionally.

• Journal of Sensor Science and Technology
• /
• v.9 no.3
• /
• pp.171-176
• /
• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it, deposited by reactive sputtering and rf magnetron sputtering, respectively, were analyzed with annealing temperature and time by four-point probe, SEM and XRD. Under annealing conditions of $1000^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to $SiO_2$ and insulation without chemical reaction to Pt thin-film, and the sheet resistivity and the resistivity of Pt thin-film deposited on it were $0.1288\;{\Omega}/{\square}$ and $12.88\;{\mu}{\Omega}{\cdot}cm$, respectively. We made Pt resistance pattern on $SiO_2$/Si substrate by lift-off method and fabricated thin-film type Pt-RTD(resistance thermometer device) for micro thermal sensors by Pt-wire, Pt-paste and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, the TCR value of fabricated Pt-RTD with thickness of $1.0{\mu}m$ was $3927\;ppm/^{\circ}C$ close to the Pt bulk value. Resistance values were varied linearly within the range of measurement temperature.

• Proceedings of the KIEE Conference
• /
• 1998.07d
• /
• pp.1349-1351
• /
• 1998

Platinum-Cobalt alloy thin films were deposited on $Al_2O_3$ substrates by r.f. cosputtering for RTD temperature sensors. We made Pt-Co alloy resistance patterns on the $Al_2O_3$ substrates by lift-off method and investigated the physical and electrical characteristics of these films under various conditions (the input power, working vacuum, annealing temperature, thickness of thin films) and also after annealing these films. At input power of Pt : $4.4 W/cm^2$. Co:6.91W/$cm^2$. working vacuum of 10 mTorr and annealing conditions of $1000^{\circ}C$ and 60 min, the resistivity and sheet resistivity of Pt-Co thin films was $15{\mu}{\Omega}{\cdot}cm$ and $0.5{\Omega}/{\square}$, respectively. The TCR value of Pt-Co alloy thin films was measured with various thickness of thin films and annealing conditions. The optimum TCR value is gained under conditions $3000{\AA}$ of thin films thickness and $1000^{\circ}C$ of annealing temperature. These results indicate that Pt-Co alloy thin films have potentiality for the high resolution RTD temperature sensors.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
• /
• 1996.05a
• /
• pp.224-227
• /
• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The deposition rate was increased with increasing the input power but decreased with increasing Ar gas pressure. The resistivity were decreased wish increasing the temperature of substrate and the annealing time at 1000$^{\circ}C$. At substrate temperature 300$^{\circ}C$, input power 7(w/$\textrm{cm}^2$), working vacuum 5mtorr and annealing conditions 1000$^{\circ}C$, 240 min we obtained 10.65${\mu}$Ω$.$cm, resistivity of Pt thin film closed to the bulk value.

• Proceedings of the KIEE Conference
• /
• 1996.11a
• /
• pp.242-244
• /
• 1996

Platinum thin films were deposited on Si-wafer by DC magnetron sputtering for RTD (Resistance Thermometer Devices). We investigated the physical and electrical characteristics of these films under various conditions, the input power, working vacuum, temperature of substrate and also after annealing these films. The Resistivity and Sheet Resistivity were decreased with increasing the temperature of substrate and the annealing time at $1000^{\circ}C$. At substrate temperature $300^{\circ}C$, input power 7(w/$cm^2$), working vacuum 5mtorr and annealing conditions $1000^{\circ}C$, 240min we obtained $10.65{\mu}{\Omega}{\cdot}cm$, Resistivity of Pt thin film and $3000{\sim}3900ppm/^{\circ}C$, TCR(temperature coefficient of resistance) closed to the bulk value.

• Journal of Sensor Science and Technology
• /
• v.6 no.2
• /
• pp.81-86
• /
• 1997

Platinum thin films were deposited on $SiO_{2}/Si$ and $Al_{2}O_{3}$ substrates by DC magnetron sputtering for RTD (resistance thermometer devices) temperature sensors. The resistivity and sheet resistivity of these films were decreased with increasing the annealing temperature and time. We made Pt resistance pattern on $Al_{2}O_{3}$ substrate by lift-off method and fabricated Pt-RTD temperature sensors by using W-wire, silver epoxy and SOG(spin-on-glass). In the temperature range of $25{\sim}400^{\circ}C$, we investigated TCR(temperature coefficient of resistance) and resistance ratio of Pt-RTD temperature sensors. TCR values were increased with increasing the annealing temperature, time and the thickness of Pt thin films. Resistance values were varied linearly within the range of measurement temperature. At annealing temperature of $1000^{\circ}C$, time of 240min and thin film thickness of $1{\mu}m$, we obtained TCR value of $3825ppm/^{\circ}C$ close to the Pt bulk value.