• Title/Summary/Keyword: RTA in ${NH}_{3}$ ambient

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A Study on the Properties of TiN/${TiSi}_{2}$ Bilayer by a Rapid Thermal Anneal in ${NH}_{3}$ Ambient (${NH}_{3}$ 분위기에서 급속열처리에 의한 TiN/${TiSi}_{2}$ 이중구조막의 특성에 대한 고찰)

  • 이철진;성영권
    • The Transactions of the Korean Institute of Electrical Engineers
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    • v.41 no.8
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    • pp.869-874
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    • 1992

  • The physical and electrical properties of TiN/TiSiS12T bilayer were studied. The TiN/TiSiS12T bilayer was formed by rapid thermal anneal in NHS13T ambient after the Ti film was deposited on silicon substrate. The Ti film reacts with NHS13T gas to make a TiN layer at the surface and reacts with silicon to make a TiSiS12T layer at the interface respectively. It was found that the formation of TiN/TiSiS12T bilayer depends on RTA temperature. In this experiment, competitive reaction for TiN/TiSiS12T bilayer occured above $600^{\circ}C$. Ti-rich TiNS1xT layer and Ti-rich TiSiS1xT layer and Ti-rich TiSiS1xT layer were formed at $600^{\circ}C$. stable structure TiN layer TiSiS12T layer which has CS149T phase and CS154T phase were formed at $700^{\circ}C$. Both stable TiN layer and CS154T phase TiSiS12T layer were formed at 80$0^{\circ}C$. The thickness of TiN/TiSiS12T bilayer was increased as the thickness of deposited Ti film increased.

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The Electrical Roperties of TiN/$TiSi_2$ Bilayer Formed by Rapid Thermal Anneal at Submicron Contact (급속열처리에 의한 TiN/$TiSi_2$ 이중구조막을 이용한 submicron contact에서의 전기적 특성)

  • 이철진;성만영;성영권
    • Journal of the Korean Institute of Telematics and Electronics A
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    • v.31A no.9
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    • pp.78-88
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    • 1994

  • The electrical properties of TiM/TiSi$_{2}$ bilayer formed by rapid thermal anneal in NH$_{3}$ ambient after the Ti film is deposited on silicon cubstrate are investigated. N$^{+}$ contact resistance slightly increases with increasing annealing temperature with P$^{+}$ contact resistance decreases. The contact resistance of N$^{+}$ contance was less than 24[.OMEGA.] but P$^{+}$ thatn that of N$^{+}$ contact but the leakage current indicates degradation of the contact at high annealing temperature for both N$^{+}$ and contacts. The leakage current of N$^{+}$ Junction was less than 0.06[fA/${\mu}m^{2}$] but P$^{+}$ contact was 0.11-0.15[fA/${\mu}m^{2}$]. The junction breakdown voltage for N$^{+}$ junction remains contant with increasing annealing temperature while P$^{+}$ junction slightly decreases. The Electrical properties of a two step annealing are better than that of one step annealing. The Tin/TiSi$_{2}$ bilayer formed by RTA in NH$_{3}$ ambient reveals good electrical properties to be applicable at ULSI contact.

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Characteristics of $TiN/TiSi_2$ bilayer by $BF_2$ dopant at Si substrate (기판 실리콘의 $BF_2$ 불순물 원자에 의한 $TiN/TiSi_2$ bilayer의 특성)

  • Lee, C.J.;Park, J.S.;You, H.S.;Sung, Y.K.
    • Proceedings of the KIEE Conference
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    • 1992.07b
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    • pp.835-838
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    • 1992

  • The $TiN/TiSi_2$ bilayer has been studied for contact barrier layer at ULSI recently. The $TiN/TiSi_2$ bilayer was formed by RTA in $NH_3$ ambient simultaneously after the Ti film was deposited on silicon substrate. In this paper, properties of $TiN/TiSi_2$ bilayer was evaluated according to $BF_2$ dopant concentration and dopant redistribution in $TiN/TiSi_2$ bilayer was also analyzed. In this experiment, the composition and structure of $TiN/TiSi_2$ bilayer were constant even though dopant concentration increased but silicide growth rate decreased. Boron atoms were redistributed within TiN film and at $TiSi_2Si$ interface during the bilayer formation.

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