• Title/Summary/Keyword: RTA annealing

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Effects of rapid thermal annealing on Physical properties of polycrystalline CdTe thin films (급속열처리가 다결정 CdTe 박막의 물성에 미치는 효과에 관한 연구)

  • 조영아;이용혁;윤종구;오경희;염근영;신성호;박광자
    • Journal of the Korean Vacuum Society
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    • v.5 no.4
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    • pp.348-353
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    • 1996
  • Rapid thermal annealing (RTA) was applied to polycrystalline CdTe thin films evaporated on CdS/ITO/glass substrate and the effect of the annealing temperatures and the atmosphere on physical properties of polycrystalline CdTe thin films and CdTe/CdS solar cell characteristics were studied. Results obtained by EDX showed that the bulk composition of CdTe remained stoichiometric after annealing at $550^{\circ}C$ in the air but the surface composition became Cd-rich. Cross-sectional TEM and micro EDX showed that columnar grains and micro-twins remained even after RTA, however, and the sulfur content in the annealed CdTe (added by sulfur diffusion from CdS during the annealing) was much smaller than that by furnace annealing. Among the investigated RTA temperatures and gas environments, the cell made with CdTe annealed at $550^{\circ}C$ in air showed the best solar energy conversion efficiency.

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Effect of Rapid Thermal Annealing on Growth and Field Emission Characteristics of Carbon Nanotubes

  • Ko, Sung-Woo;Shin, Hyung-Cheol;Park, Byung-Gook;Lee, Jong-Duk;Jun, Pil-Goo;Kwak, Byung-Hwak;Noh, Hyung-Wook;Uh, Hyung-Soo
    • 한국정보디스플레이학회:학술대회논문집
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    • 2004.08a
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    • pp.453-455
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    • 2004
  • The effect of rapid thermal annealing (RTA) treatment on the growth characteristics of CNTs was investigated. We observed that Ni catalyst film was agglomerated by RTA treatment, resulting in the formation of Ni nanoparticles. The well aligned CNTs were grown from the Ni nanoparticles by plasma enhanced chemical vapor deposition (PECVD). It is shown that the size and distribution of the nanoparticles depend mainly on the annealing temperature and initial thickness of the metal layer. Also, it was found that CNTs grown through optimal RTA treatment had the more improved field emission characteristics than those of as-grown CNTs.

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Rapid thermal annealing effect on electrical and optical properties of Indium Zinc Tin Oxide grown by RF sputter and Indium Aluminum Zinc Oxide grown by co-sputtering methode (RF sputter를 이용하여 성장시킨 IZTO박막과 Co-sputter 방법을 이용하여 성장시킨 IAZO 박막의 급속 열처리 효과)

  • Park, Young-Seok;Kim, Han-Ki
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2007.11a
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    • pp.446-447
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    • 2007
  • The rapid thermal annealing effect of transparent IZTO(indium zinc oxide) and IAZO(indium alminium zinc oxide) films grown on glass substrate for solar cell or flat panel displays(FPDs) was studied. We prepared IZTO using RF magnetron sputtering and IAZO using DC co-sputtering method. Subsequently, using rapid thermal annealing(RTA) system, prepared IZTO and IAZO films were annealed at 300, 400, 500, $600^{\circ}C$ for 90sec. In addition, Electrical and optical characteristics were measured by Hall effect measurement and UV/Vis spectrometer examinations, respectively. To analyze structural properties and surface smoothness of the IZTO and IAZO films, XRD and SEM examinations were performed, respectively. It was shown that IZTO and IAZO films exhibited microcrystalline structure over $400^{\circ}C$ and amorphous structural regardless of RTA temperature, respectively.

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Effect of Hydrogen in Rapid Thermal Annealing on the Graphene-Zinc Oxide Electrode for Supercapacitor (슈퍼커패시터용 그래핀-산화아연 전극의 급속열처리에서 수소의 영향)

  • Jeong, Woo-Jun;Oh, Ye-Chan;Kim, Sang-Ho
    • Journal of the Korean institute of surface engineering
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    • v.52 no.3
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    • pp.123-129
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    • 2019
  • With recent demand for the renewable energy resources, we conducted a research on the energy conversion and storage device of supercapacitor. The hybrid graphene-zinc oxide(GZO) electrodes for the supercapacitors (SCs) were fabricated and investigated. To increase the electrical conductivity of the GZO electrode, the rapid thermal annealing(RTA) in $Ar/H_2$(10%) atmosphere was applied and the effect was examined by comparing it with RTA at Ar atmosphere. In Raman spectroscopy, the electrodes annealed at 400? in $Ar/H_2$ atmosphere showed a lower ratio of D/G peak than that of annealed at Ar atmosphere, and had a larger specific capacitance(Sc) in the cyclic voltammetry(CV), and a lower the equivalent series resistance(ESR) in the electrochemical impedance spectroscopy(EIS). The reason seems to come from the better mixing of the graphene and zinc oxide by the RTA in $Ar/H_2$(10%).

Luminescent Properties of Y2O3:Eu3+ Thin Film Through Spin-coating and Rapid Thermal Annealing Process (스핀코팅 및 급속열처리 공정을 통해 형성된 Y2O3:Eu3+ 박막의 발광특성)

  • Jehong Park;Yongseok Jeong
    • Journal of the Semiconductor & Display Technology
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    • v.23 no.1
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    • pp.88-91
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    • 2024
  • The europium doped yttrium oxide (Y2O3:Eu3+) thin film was formed on a Si substrate by the conventional spin-coating process followed by rapid thermal annealing (RTA) treatment. The spinning profiles such as rotation speed, acceleration and holding times were controlled during the spin-coating process for the best condition of the Y2O3:Eu3+ thin film. The RTA treatment was conducted for several temperature in order to crystallize the spin coated film. The Y2O3:Eu3+ thin film presented best performance in the conditions of 4000 rpm, 30 s and 10 s of rotation speed, acceleration time and holding time, respectively, at a fixed RTA temperature of 900 ℃.

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A Study on the Characteristics of 2-Dimensinal Molybdenum Disulfide Thin Films formed on Sapphire Substrates by DC Sputtering and Rapid Thermal Annealing (DC 스퍼터링 및 급속 열처리 공정을 이용한 사파이어 기판상에 형성된 2차원 황화몰리브덴 박막의 특성에 관한 연구)

  • Qi, Yuanrui;Ma, Sang Min;Jeon, Yongmin;Kwon, Sang Jik;Cho, Eou-Sik
    • Journal of the Semiconductor & Display Technology
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    • v.21 no.3
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    • pp.105-109
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    • 2022
  • For the realization of higher reliable transition metal dichalcogenide layer, molybdenum disulfide was formed on sapphire substrate by direct current sputtering and subsequent rapid thermal annealing process. Unlike RF sputtered MoS2 thin films, DC sputtered showed no irregular holes and protrusions after annealing process from scanning electron microscope images. From atomic force microscope results, it was possible to investigate that surface roughness of MoS2 thin films were more dependent on DC sputtering power then annealing temperature. On the other hand, the Raman scattering spectra showed the dependency of significant E12g and A1g peaks on annealing temperatures.

The Origin of Change in Luminescent Properties of ZnMgS:Mn Thin Film Phosphor with Varying Annealing Temperature

  • Lee, Dong-Chin;Kang, Jong-Hyuk;Jeon, Duk-Young;Yun, Sun-Jin
    • 한국정보디스플레이학회:학술대회논문집
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    • 2005.07b
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    • pp.1576-1579
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    • 2005
  • With varying rapid thermal annealing (RTA) temperature, luminescence properties of $Zn_{0.75}Mg_{0.25}S:Mn$ thin film deposited by RF-magnetron sputtering technique were investigated. In this study, $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor showed more red emission than those of the previous studies when annealed around 600 or $650^{\circ}C$. Although all samples were deposited from identical source composition, a main peak wavelength of photoluminescence spectra of $Zn_{0.75}Mg_{0.25}S:Mn$ shifted toward shorter wavelengths depending upon increase of RTA temperature. The same dependence of wavelength on RTA temperature was also observed in cathodoluminescence as well as electroluminescence measurements. It was revealed that the change of the luminescence properties were originated from structural changes in $Zn_{0.75}Mg_{0.25}S:Mn$ thin film phosphor from cubic to hexagonal phases analyze using conventional X-ray pole figure mapping. The phase transition would be the origin of luminescence property changes with respect to RTA temperature.

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Fabrication of polycrystalline Si films by rapid thermal annealing of amorphous Si film using a poly-Si seed layer grown by vapor-induced crystallization

  • Yang, Yong-Ho;An, Gyeong-Min;Gang, Seung-Mo;An, Byeong-Tae
    • Proceedings of the Materials Research Society of Korea Conference
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    • 2010.05a
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    • pp.58.1-58.1
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    • 2010
  • We have developed a novel crystallization process, where the crystallization temperature is lowered compared to the conventional RTA process and the metal contamination is lowered compared to the conventional VIC process. A very-thin a-Si film was deposited and crystallized at $550^{\circ}C$ for 3 h by the VIC process and then a thick a-Si film was deposited and crystallized by the RTA process at $680^{\circ}C$ for 5 min using the VIC poly-Si layer as a crystallization seed layer. The RTA crystallized temperature could be lowered up to $50^{\circ}C$, compared to RTA process alone. The poly-Si film appeared a needle-like growth front and relatively well-arranged (111) orientation. In addition, the Ni concentration in the poly-Si film was lowered to $3{\times}10^{17}\;cm^{-3}$ and that at the poly-Si/$SiO_2$ interface was lowered to $5{\times}10^{19}\;cm^{-3}$. The reduction in metal contamination could be greatly helpful to achieve a low leakage current in poly-Si TFT, which is the critical parameter for commercialization of AMOLED.

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Ferroelectric Properties of PZT Thin Films by RF-Magnetron sputtering (RF 마그네트론 스퍼터링 법을 이용한 PZT 박막의 강유전 특성)

  • Park, Young;Joo, Pil-Yeoun;Yi, Ju-Sin;Song, Jun-Tae
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 1999.05a
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    • pp.341-344
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    • 1999
  • The effects of post annealing treatments of ferroelectrlclty in PZT(P $b_{1.05}$(Z $r_{0.52}$, $Ti_{0.48}$) $O_3$ thin film deposited on Pt/ $SiO_2$/Si substrate by RF-Magnetron sputtering methode was Investigated. Analyses by RTA(Rapid Thermal Annealing) treatments reveled that the crystallization process strongly depend on the healing temperature. The Perovskite structure with strong PZT (101) plan was obtained by RTA treatments at 75$0^{\circ}C$ With increasing RTA temperature of PZI thin films, the coercive field and remanent Polarization decreased, while saturation polarization( $P_{r}$) was decreased. P-E curves of Pt/PZT/Pt capacitor structures demonstrate typical hysteresiss loops. The measure values of $P_{r}$,. $E_{c}$ and dielectric constants by post annealed at 75$0^{\circ}C$ were 38 $\mu$C/$\textrm{cm}^2$ 35KV/cm and 974, respectively. Switching polarization versus fatigue characteristic showed 12% degradation up to 10$^{7}$ cycles.s.s.s.s.s.s.

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