• Title/Summary/Keyword: RFID Tag Memory

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Reader Level Filtering for Query Processing in an RFID Middleware (RFID 미들웨어에서 질의 처리를 위한 리더 단계 여과)

  • Kabir, Muhammad Ashad;Ryu, Woo-Seok;Hong, Bong-Hee
    • Journal of the Institute of Electronics Engineers of Korea CI
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    • v.45 no.3
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    • pp.113-122
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    • 2008
  • In RFID system, Middleware collects and filters streaming data gathered continuously from readers to process applications requests. The enormous amount of data makes middleware in highly overloaded. Hence, we propose reader level filtering in order to reduce overall middleware load. In this paper, we consider reader filtering capability and define query plan to minimize number of queries for processing into middleware and reader level. We design and implement middleware system based on proposed query plan. We perform several experiments on implemented system. Our experiments show that the proposed query plan considerably improves the performance of middleware by diminishing processing time and network traffic between reader and middleware.

Design of Low-Area and Low-Power 1-kbit EEPROM (저면적.저전력 1Kb EEPROM 설계)

  • Yu, Yi-Ning;Yang, Hui-Ling;Jin, Li-Yan;Jang, Ji-Hye;Ha, Pan-Bong;Kim, Young-Hee
    • Journal of the Korea Institute of Information and Communication Engineering
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    • v.15 no.4
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    • pp.913-920
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    • 2011
  • In this paper, a logic process based 1-kbit EEPROM IP for RFID tag chips of 900MHz is designed. The cell array of the designed 1-kbit EEPROM IP is arranged in a form of four blocks of 16 rows x 16 columns, that is in a two-dimensional arrangement of one-word EEPROM phantom cells. We can reduce the IP size by making four memory blocks share CG (control gate) and TG (tunnel gate) driver circuits. We propose a TG switch circuit to supply respective TG bias voltages according to operational modes and to keep voltages between devices within 5.5V in terms of reliability in order to share the TG driver circuit. Also, we can reduce the power consumption in the read mode by using a partial activation method to activate just one of four memory blocks. Furthermore, we can reduce the access time by making BL (bit line) switching times faster in the read mode from reduced number of cells connected to each column. We design and compare two 1-kbit EEPROM IPs, two blocks of 32 rows ${\times}$ 16 columns and four blocks of 16 rows ${\times}$ 16 columns, which use Tower's $0.18{\mu}m$ CMOS process. The four-block IP is smaller by 11.9% in the layout size and by 51% in the power consumption in the read mode than the two-block counterpart.

Organo-Compatible Gate Dielectrics for High-performance Organic Field-effect Transistors (고성능 유기 전계효과 트랜지스터를 위한 유기친화 게이트 절연층)

  • Lee, Minjung;Lee, Seulyi;Yoo, Jaeseok;Jang, Mi;Yang, Hoichang
    • Applied Chemistry for Engineering
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    • v.24 no.3
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    • pp.219-226
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    • 2013
  • Organic semiconductor-based soft electronics has potential advantages for next-generation electronics and displays, which request mobile convenience, flexibility, light-weight, large area, etc. Organic field-effect transistors (OFET) are core elements for soft electronic applications, such as e-paper, e-book, smart card, RFID tag, photovoltaics, portable computer, sensor, memory, etc. An optimal multi-layered structure of organic semiconductor, insulator, and electrodes is required to achieve high-performance OFET. Since most organic semiconductors are self-assembled structures with weak van der Waals forces during film formation, their crystalline structures and orientation are significantly affected by environmental conditions, specifically, substrate properties of surface energy and roughness, changing the corresponding OFET. Organo-compatible insulators and surface treatments can induce the crystal structure and orientation of solution- or vacuum-processable organic semiconductors preferential to the charge-carrier transport in OFET.