• 한국정밀공학회지
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• 제23권8호
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• pp.163-170
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• 2006

By removing sacrificial layer through ashing process, movable MEMS structure on substrate can be fabricated in surface micromachining. However, MEMS structure includes, during the ashing process, the warping or buckling effects due to stress gradient along the vertical direction of thin film. In this study, we presented method for counteracting the unwanted deflection of MEMS structure and designed using character of deposit process to overcome limited design conditions. Unit cell patterns were designed with character of deposit shape, and their final shapes were adopted using Finite Element Method. Finally, RF MEMS switch was fabricated by surface micro machining as test vehicles. We checked out that alleviation effect for deformation of switch improved by 35%.

• E2M - 전기 전자와 첨단 소재
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• 제21권8호
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• pp.3-10
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• 2008

• 한국정밀공학회지
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• 제21권2호
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• pp.203-209
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• 2004

Compliant bi-stable mechanism allows two stable states within its operation range staying at one of the local minimum states of the potential energy. Energy storage characteristics of the bi-stable mechanism offer two distinct and repeatable stable states, which require no power input to maintain it at each stable state. This paper suggests an equivalent model of the chevron-type bi-stable microactuator using the equivalent spring stiffness in the rectilinear and the rotational directions. From this model the range of spring stiffness where the bi-stable mechanism can be operated is analyzed and compared with the results of the FEA (Finite Element Analysis) using ANSYS for the buckling analysis, both of which show a good agreement. Based on the analysis, a newly designed chevron-type bi-stable MEMS actuator using hinges is suggested for the latch-up operation. It is found that the experimental response characteristics of around 36V for the bi-stable actuation for the 60$mu extrm{m}$ stroke correspond very well to the results of the equivalent model analysis after the change in cross-sectional area by the fabrication process is taken into account. Together with the resonance frequency experiment where 1760Hz is measured, it is shown that the chevron-type bi-stable MEMS actuator using hinges is applicable to the optical switch as an actuator.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2008년도 제39회 하계학술대회
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• pp.1464-1465
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• 2008

In this paper, we compared the mechanical characteristics between LTCC-based RF MEMS packaging structures fabricated using two different types of bonding materials; BCB and gold-tin. The BCB-based packages showed an average shear strength of 32.1 MPa and helium leak rate of $1.76{\times}10^{-8}atm{\cdot}cc/sec$ for a cavity volume of $0.45\times10^{-3}cc$, while the packages bonded by gold-tin layer (80 wt.% gold, 20 wt.% tin) showed an average shear strength of 42.70 MPa and helium leak rate $1.38{\times}10^{-8}atm{\cdot}cc/sec$ for a cavity volume of $1.21{\times}10^{-3}cc$.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1507_1508
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• 2009

This study proposes a composite right/left-handed transmission line (CRLH-TL) that permits switching between the right-handed (RH) and left-handed (LH) modes using single crystalline silicon (SCS) RF MEMS switches. It is possible to change modes from the RH to LH mode, or vice versa, by controlling the admittance of capacitors and the impedance of inductors using switch operations. The proposed switchable CRLH-TL consists of SCS RF MEMS switches, metal-insulator-metal (MIM) capacitors and shunt inductors. At 8 GHz, the fabricated device shows a phase response of $87^{\circ}$ with an insertion loss of 2.7 dB in the LH mode, and a phase response of $-77^{\circ}$ with an insertion loss of 0.56 dB in the RH mode.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2009년도 제40회 하계학술대회
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• pp.1509_1510
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• 2009

This paper presents the design and simulation results of ohmic contact RF MEMS silicon switch with a high isolation at high frequencies along with the position of a contact part, initial off-state and intermediate off-state including the state where a contact part is placed right over a signal line of coplanar waveguide (CPW). The ohmic contact part is connected with comb drives made of high resistivity single crystalline silicon. The released contact part is $30{\mu}m$ apart from the edge of signal line on the glass substrate along the lateral direction (x-direction) at initial off-state. The electrostatic force of the comb electrode creates the x-directional movement thus initial state is converted to the intermediate off-state. The initial off-state of the switch results in isolations of -31 dB, -24 dB and reflections of -0.45 dB, -0.67 dB at 50 GHz and 110 GHz, respectively. It shows the isolation degradation when the contact part moves right over the signal line of CPW like an initial off-state of a conventional MEMS switch. The isolations and reflections are -31 dB, -24 dB and -0.50 dB, -1.31 dB at 50 GHz and 110 GHz, respectively at the intermediate off-state.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2004년도 하계학술대회
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• pp.11-14
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• 2004

In this paper, a novel tunable bandpass filter using tunable series inductors and MEMS switches for wireless LAN applications was proposed. The proposed tunable filter was fabricated using a micromachining technology and performances of the fabricated filter were estimated. The filter consists of spiral inductors, MIM capacitors and direct-contact type MEMS switches, and its frequency tunability is achieved by changing the inductance that is induced by ON/OFF actuations of the MEMS switches. The actuation voltage of the MEMS switches was 58 V, and the measured center frequencies were 2.55 GHz and 5.1 GHz, respectively. The passband insertion loss and 3-dB bandwidth were 4.2 dB and 22.5 % at 2.55 GHz, and 5.2 dB and 23.5 % at 5.1 GHz, respectively.

• 한국정보통신설비학회:학술대회논문집
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• 한국정보통신설비학회 2006년도 하계학술대회
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• pp.67-70
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• 2006

This paper deals with a single crystalline silicon (SCS) RF MEMS switch for telecommunication system applications. The proposed SCS switch was fabricated using a silicon-on-glass (SiOG) process and its performances in terms of RF responses, switching time, lifetime were characterized. The proposed SCS switch consists of movable plates, mechanical spring structures, which are composed of robust SCS, resulting in mechanically good stability, The measured actuation voltage was 30 V, and with this applied voltage, the insertion loss and isolation characteristics were measured to be 0.05 and 44.6 dB at 2 GHz respectively. The measured switch ON and OFF time were 13 and $9{\mu}s$, respectively. The lifetime of the fabricated switch was tested. Even after over 1 billion cycles repeated ON/OFF actuations, the switch maintained its own characteristics.

• 한국광학회지
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• 제14권4호
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• pp.466-472
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• 2003

본 논문에서는 서로 다른 길이의 광섬유 지연선로를 광 2${\times}$2 MEMS 스위치로 선택하여 위상 배열 안테나의 각 안테나 소자에 급전되는 RF 신호의 위상을 고속으로 제어할 수 있는 광 실시간 지연선로의 구조를 제안하였다. RF 신호의 주사 방향이 8개인 10 GHz 선형 위상 배열 안테나용 광 실시간 지연선로를 구현하였으며, 실험 결과 최대 시간 지연 오차가 0.2 ps이하, 즉 최대 주사 각 오차 0.84$^{\circ}$로 측정되었다. 또한 제안된 실시간 지연선로에 의해 구동되는 8개의 마이크로 스트립 패치 안테나 소자로 구성된 10 GHz용 선형 위상배열 안테나를 설계하였고, 시뮬레이션을 이용하여 이 안테나의 방사 패턴을 분석하였다.

• 한국전자파학회논문지
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• 제24권12호
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• pp.1113-1119
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• 2013

본 논문에서는 다중 입출력(Multiple-Input Multiple-Output: MIMO) 무선 기계에 대한 안테나의 설계를 제안하였다. 제안된 안테나는 다양한 LTE(Long Term Evolution) 서비스 대역을 다룬다; 밴드(band) 17(704~746 MHz), 밴드 13(746~787 MHz), 밴드 5(824~894 MHz), and 밴드 8(880~960 MHz). 제안된 주(main) 안테나는 광대역 동작을 위해 역 L-형태의 슬릿(slit)을 가지고 있다. 그리고 LTE 부(sub) 안테나는 스위치(switch)를 결합한 루프(loop) 안테나 구조에 기초를 두었고, 논리 회로에 의해서 공진 주파수가 조절될 수 있다. LTE 수신 안테나에 대한 조절 기술은 원하는 대역의 실현을 위해, 그리고 임피던스(impedance) 조절을 위해 RF MEMS(Micro-Electro Mechanical System)를 사용하였다. 두 개의 제안된 안테나는 서로 수직으로 편파되기 때문에 원하는 주파수 대역에서 두 안테나는 -20 dB 이하의 격리도 특성을 가지며, 두 안테나 사이의 상관 계수(Envelope Correlation Coefficient: ECC) 특성은 0.06 이하의 매우 낮은 값을 가진다. 제안된 안테나는 통합된 LTE 다중 입출력 시스템의 단말기에 적용이 가능하다.