• 한국전자파학회논문지
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• 제25권12호
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• pp.1219-1227
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• 2014

펄스 레이저 증착(Pulsed laser Deposition: PLD) 및 RF 스퍼터링 증착(Sputtering Deposition)의 단계적 적용을 통해, 표면탄성파 대역 통과 필터(Surface Acoustic Wave Bandpass Filter: SAW-BPF)용 ZnO 박막을 성장시켰다. PLD 방법으로 성장된 ZnO 박막위에 RF sputtering 방법을 사용하여 ZnO 박막을 재증착시켰으며, 성장된 ZnO 박막의 물성을 분석하기 위하여 XRD, SEM 및 AFM 분석장비를 사용하였다. 두 가지 증착 방법이 단계적으로 적용되어 성장된 ZnO 박막의 경우, 결정성과 배향성이 우수하게 유지되면서 표면거칠기가 향상되었다. 분석 결과, ${\omega}$-scan의 반치폭과 표면거칠기의 RMS 값은 각각 $0.79^{\circ}$와 1.108 nm였다. 그리고 성장된 양질의 ZnO 박막을 사용하여 SAW-BPF를 제작하여 측정한 결과는 응답 특성의 중심주파수가 260.8 MHz, 대역폭은 2.98 MHz, 그리고 삽입손실은 36.5 dB이었다.

• 한국광학회지
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• 제21권5호
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• pp.181-184
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• 2010

본 논문에서는 파장 가변과 동시에 스위칭이 가능한 쌍파장 어븀 첨가 광섬유 레이저를 실험적으로 구현하였다. 희토류 첨가 광섬유를 이득 매질로 사용하고 두 개의 선형 공진기를 중첩하여 파장 스위칭 효과를 구현하였다. 음향광학 변조기로 두 레이저 발진 파장들 사이에 선택적으로 스위칭하는 기능을 가지면서 동시에 광섬유 격자에 인장력 및 수축력을 인가하여 발진 파장을 가변할 수 있는 기능성 쌍파장 광섬유 레이저를 구현하였다. 제안된 파장 가변형 쌍파장 스위칭 레이저는 높은 소광비와 가변성, 넓은 가변 대역폭, 그리고 빠른 안정응답시간 등 이전의 기술에 비해 더 좋은 장점들을 가지고 있다. 파장 스위치를 하는 모든 경우에 대해 40 dB이상의 높은 소광비를 가지는 고성능의 광섬유 레이저를 구현하였다. 제안된 쌍파장 광섬유 레이저의 출력은 안정적이고 출력 변동은 0.6 dB 이하로 측정되었다. 발진 파장의 가변성 변화는 ~7.2 nm/$m^{-1}$로 측정되었다.

• 한국신재생에너지학회:학술대회논문집
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• 한국신재생에너지학회 2007년도 추계학술대회 논문집
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• pp.281-284
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• 2007

Recently, we have developed p-i-n a-Si:H single junction thin film solar cells with RF (13.56MHz) plasma enhanced chemical vapor deposition (PECVD) system, and also successfully fabricated the mini modules ($>300cm^2$), using the laser patterning technique to form an integrated series connection. The efficiency of a mini module was 7.4% ($Area=305cm^2$, Isc=0.25A, Voc=14.74V, FF=62%). To fabricate large area modules, it is important to optimise the integrated series connection, without damaging the cell. We have newly installed the laser patterning equipment that consists of two different lasers, $SHG-YVO_4$ (${\lambda}=0.532{\mu}m$) and YAG (${\lambda}=1.064{\mu}m$). The mini-modules are formed through several scribed lines such as pattern-l (front TCO), pattern-2 (PV layers) and pattern-3 (BR/back contact). However, in the case of pattern-3, a high-energy part of laser shot damaged the textured surface of the front TCO, so that the resistance between the each cells decreases due to an incomplete isolation. In this study, the re-deposition of SnOx from the front TCO, Zn (BR layer) and Al (back contact) on the sidewalls of pattern-3 scribed lines was observed. Moreover, re-crystallization of a-Si:H layers due to thermal damage by laser patterning was evaluated. These cause an increase of a leakage current, result in a low efficiency of module. To optimize a-Si:H single junction thin film modules, a laser beam profile was changed, and its effect on isolation of scribed lines is discussed in this paper.

• 한국재료학회지
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• 제6권6호
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• pp.636-643
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• 1996

공진기형 제 2고조파소자(SHG)는 레이저 빔의 에너지 밀도가 높아 고내구성 박막이 필요하다. 본 연구에서는 광학박막 재료로 고융점 산화물인 ZrO2, TiO2, SiO2를 사용하였다. 반응성 스퍼터링 방법으로 제작한 ZrO2, TiO2, SiO2 박막을 XRD, SAM을 사용하여 분석하였고, 박막의 광학적 특성을 평가하였다. SHG 소자의 KTP 및 Nd:YAG 결정의 반사방지막(A/R 코팅)구성은 ZrO2와 SiO2를 사용하여 컴퓨터로 계산하였는데 기본파인 1064nm와 제 2고조파인 532nm에서 각각 0.1%, 0.5%이하의 반사율을 갖도록 하였다. 또한 고반사막(H/R 코팅)의 경우 1064nm에서 99.9%의 반사율을 갖도록 TiO2와 SiO2로 디자인하였다. 제작한 광학박막의 광학적 특성, 레이저 내구성(laser damage threshold), 온습도 안정성 실험 등을 통해 광학박막을 평가하였다.

• 한국재료학회지
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• 제21권12호
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• pp.703-707
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• 2011

The electrochromic properties of tungsten oxide films grown by RF sputtering were investigated. Among the sputter parameters, first the $Ar:O_2$ ratios were controlled with division into only an $O_2$ environment, 1:1 and 4:1. The structure of each film prepared by these conditions was studied by X-ray diffraction, X-ray photoelectron spectroscopy and Rutherford backscattering spectroscopy. The sputter-deposited tungsten oxide films had an amorphous structure regardless of the $Ar:O_2$ ratios. The chemical compositions, however, were different from each other. The stoichiometric structure and low-density film was obtained at higher $O_2$ contents. Electrochemical tests were performed by cyclic voltammetry and chronoamperometry at 0.05 M $H_2SO_4$ solutions. The current density and charge ratio was estimated during the continuous potential and pulse potential cycling at -0.5 V and 1.8 V, respectively. The film grown in a higher oxygen environment had a higher current density and a reversible charge reaction during intercalation and deintercalation. The in-situ transmittance tests were performed by He-Ne laser (633 nm). At higher oxygen contents, a big transmittance difference was observed but the response speed was too slow. This was likely caused by higher film resistivity. Furthermore, the effect of sputtering pressure was also investigated. The structure and surface morphology of each film was observed by X-ray diffraction and scanning electron microscopy. A rough surface was observed at higher sputtering pressure, and this affected the higher transmittance difference and coloration efficiency.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.489.2-489.2
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• 2014

The planar type flexible piezoelectric energy harvesters (PEH) based on PbZr0.52Ti0.48O3 (PZT) thin films on the flexible substrates are demonstrated to convert mechanical energy to electrical energy. The planar type energy harvesters have been realized, which have an electrode pair on the PZT thin films. The PZT thin films were deposited on double side polished sapphire substrates using conventional RF-magnetron sputtering. The PZT thin films on the sapphire substrates were transferred by PDMS stamp with laser lift-off (LLO) process. KrF excimer laser (wavelength: 248nm) were used for the LLO process. The PDMS stamp was attached to the top of the PZT thin films and the excimer laser induced onto back side of the sapphire substrate to detach the thin films. The detached thin films on the PDMS stamp transferred to adhesive layer coated on the flexible polyimide substrate. Structural properties of the PZT thin films were characterized using X-ray diffraction (XRD) and scanning electron microscopy (SEM). To measure piezoelectric power generation characteristics, Au/Cr inter digital electrode (IDE) was formed on the PZT thin films using the e-beam evaporation. The ferroelectric and piezoelectric properties were measured by a ferroelectric test system (Precision Premier-II) and piezoelectric force microscopy (PFM), respectively. The output signals of the flexible PEHs were evaluated by electrometer (6517A, Keithley). In the result, the transferred PZT thin films showed the ferroelectric and piezoelectric characteristics without electrical degradation and the fabricated flexible PEHs generated an AC-type output power electrical energy during periodically bending and releasing motion. We expect that the flexible PEHs based on laser transferred PZT thin film is able to be applied on self-powered electronic devices in wireless sensor networks technologies. Also, it has a lot of potential for high performance flexible piezoelectric energy harvester.

• 전자공학회논문지
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• 제53권11호
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• pp.3-8
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• 2016

해외에서 수행된 연구를 참고하여 다중 캐리어 생성 모듈(MCGM)을 설계하였다. 다중 캐리어 생성 모듈(MCGM)을 이용하여 32개의 레이저 다이오드(LD)로 12.5 GHz 간격의 256개의 광 채널을 생성하고, 생성한 광 채널을 12.4Gbps로 변조 후 recirculating loop를 이용해 최대 1000km를 전송하여 생성한 광 채널의 성능을 확인 하였다. 실험 결과 LD에서 출력되는 광 채널의 파장에서 멀리 떨어진 채널은 노이즈 영향을 크게 받음을 알 수 있었다.

• Journal of the Optical Society of Korea
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• 제2권1호
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• pp.9-12
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• 1998

Rational harmonic mode-locking of an Er-doped fiber ring laser has been successfully demonstrated up to the 16-th harmonic, of the RF frequency applied to the electro-optic modulator. This is the highest harmonic reported so far to our knowledge.

• 전자공학회논문지A
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• 제32A권7호
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• pp.94-103
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• 1995

Thin film acoustooptic beam deflector in proton-exchanged Y-cut LiNbO$_{3}$ was fabricated and measured. The planar waveguide was fabricated by using the proton-exchanged and annealing method in Y0cut LiNbO$_{3}$. Interdigital transducer for SAW(surface acoustic wave) was made by the laser lithography. Using above method, the thin film acoustooptic beam deflector was constructed. Its SAW wavelength was 20.mu.m at 174MHz center frequency. The interaction length between guided optical wave and SAW was 2.16mm. The measured 3dB bandwidth was 17MHz using He-Ne laser. And 70% diffraction efficiency was obtained at 970mW RF driving power.

• Journal of Advanced Marine Engineering and Technology
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• 제37권2호
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• pp.144-148
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• 2013

In this paper, the ultra water-repellent thin films were prepared by RF PECVD. On the basis of surface morphology, chemical bonding states and plasma diagnostics, a formation model of clusters for the ultra water-repellent films was discussed from considerations of formation process and laser scattering results. Moreover, using laser scattering method, the relative change of quantity of nano-clusters or size of agglomerates could be confirmed. From the results, the films were deposited with nano-clusters and those of agglomerates, which formed in organosilicon plasma, and formation of agglomerates were depended on the deposition time.