• Transactions on Electrical and Electronic Materials
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• 제16권6호
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• pp.303-307
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• 2015

Multilayered films of ITO (In₂O₃:SnO₂ = 9:1)/SiO₂ were deposited on soda-lime glass by RF/DC magnetron sputtering at 500℃ to improve the energy conversion efficiency of dye-sensitized solar cells (DSSCs). The light absorption of the dye was improved by decrease in light reflectance from the surface of the DSSCs by using an ITO film. In order to estimate the optical characteristics and compare them with experimental results, a simulation program named EMP (essential macleod program) was used. EMP results revealed that the multilayered thin films showed high transmittance (approximate average transmittance of 79%) by adjusting the SiO₂ layer thickness. XRD results revealed that the ITO and TiO₂ films exhibited a crystalline phase with (400) and (101) preferred orientations at 2 θ = 26.24° and 35.18°, respectively. The photocurrent-voltage (I-V) characteristics of the DSSCs were measured under AM 1.5 and 100 mW/cm² (1 sun) by using a solar simulator. The DSSC fabricated on the ITO film with a 0.1-nm-thick SiO₂ film showed a Voc of 0.697 V, J_sc of 10.596 mA/cm² , FF of 66.423, and calculated power conversion efficiency (η_AM1.5) of 5.259%, which was the maximum value observed in this study.

• 한국전자파학회논문지
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• 제29권2호
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• pp.99-108
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• 2018

본 논문은 마그네트론 대체를 위한 반도체 전력 발진기 모듈 설계에 관련된 내용을 기술하였다. 300급 LDMOS 단일 전력 증폭기의 특성을 확인하였고 두 개를 결합하여 모듈을 구성하였다. 결합된 모듈에 delay-line feedback loop을 구성하고 위상 천이기를 이용하여 위상을 조절하여 발진기를 구동시켰다. 발진기 모듈 측정 결과 주파수 2.327 GHz에서 출력 800 W, 효율 58 %로 측정되었다. 이 결과는 시뮬레이션 결과와 유사한 특성을 보여준다.

• 전자공학회논문지
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• 제50권12호
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• pp.56-62
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• 2013

우리는 MOSFET Layout 단계에서 Multiplier 구성을 통한 Common centroid layout 방식을 사용한 무선 전력 전송 용 CMOS 정류회로를 제안한다. 제안하는 정류회로는 기존의 다이오드를 사용하지 않은 Cross-coupled MOSFET 정류회로로 13.56 MHz에서 동작한다. 전력 소모를 최소화하고, 높은 주파수까지 동작하기 위하여 Full bridge 정류회로에서 효율을 높이기 위한 비교기를 제거하였다. Layout 단계에서 Multiplier 구성을 통한 Common centroid layout 방식은 Chip-layout 상에서 MOSFER의 Finger에 의해 길어진 연결 선로에 존재하는 기생 직렬 저항과 병렬 Capacitor에 의해 발생하는 시간 지연을 줄이기 위해 고안되어, 천이 시간을 줄여 Cross-coupled 구조의 On-상태에서 Off-상태, 혹은 그 반대의 상태 변화를 빠르게 한다. 이는 빠른 상태 변화 시간으로 인해 전력 변환 효율을 증가시킨다. 본 정류회로는 $0.11{\mu}m$ CMOS 공정으로 제작되었으며, 전력 변환 효율은 최대 86.4%로 측정되었으며, 600 MHz 이상까지 높은 전력 변환 효율을 가지며, 이는 현재 발표된 것 중, Cross-coupled 구성을 기반으로 한 정류회로 중 가장 높은 성능을 가진다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2003년도 하계학술대회 논문집 C
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• pp.1955-1957
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• 2003

This paper presents a novel defected ground structure (DGS) and its application to a microwave oscillator. The presented oscillator is designed so as to use the suggested defected ground structure as a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM calculations and simple circuit analysis method. The implemented 1.07 GHz oscillator exhibits 0 dBm output power with over 15% dc-to-RF power efficiency and -106 dBc/Hz phase noise at 100 kHz offset from carrier.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.478.1-478.1
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• 2014

We investigated $MoO_3$ graded ITO electrodes for organic solar cells (OSCs) without PEDOT:PSS buffer layer. The effect of $MoO_3$ thickness on the electrical, optical, and structural properties of $MoO_3$ graded ITO anodes prepared by RF/DC magnetron co-sputtering system using $MoO_3$ and ITO targets was investigated. At optimized conditions, we obtained $MoO_3$ graded ITO electrodes with a low sheet resistance of 13 Ohm/square, a high optical transmittance of 83% and a work function of 4.92 eV, comparable to conventional ITO films. Due to the existence of $MoO_3$ on the ITO electrodes, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer successfully operated. Although OSCs fabricated on ITO anode without buffer layer showed a low power conversion efficiency of 1.249%, OSCs fabricated on $MoO_3$ graded ITO electrode without buffer layer showed a outstanding cell performance of 2.545%. OSCs fabricated on the $MoO_3$ graded ITO electrodes exhibited a fill factor of 61.275%, a short circuit current of 7.439 mA/cm2, an open circuit voltage of 0.554 V, and a power conversion efficiency of 2.545%. Therefore, $MoO_3$ graded ITO electrodes can be considered a promising transparent electrode for cost efficient and reliable OSCs because it could eliminate the use of acidic PEDOT:PSS buffer layer.

• Journal of electromagnetic engineering and science
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• 제3권2호
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• pp.118-125
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• 2003

This paper presents a 5.8-㎓ oscillator that uses a novel defected ground structure(DGS), which is etched on the metallic ground plane. As the suggested defected ground structure is the structure for mounting an active device, it is the roles of a feedback loop inducing a negative resistance as well as a frequency-selective circuit. Applying the feedback loop between the drain and the gate of a FET device produces precise phase conversion in the feedback loop. The equivalent circuit parameters of the DGS are extracted by using a three-dimensional EM simulation ,md simple circuit analysis method. In order to demonstrate a new DGS oscillator, we designed the oscillator at 5.8-㎓. The experimental results show 4.17 ㏈m output power with over 22 % dc-to-RF power efficiency and - 85.8 ㏈c/Hz phase noise at 100 KHz offset from the fundamental carrier at 5.81 ㎓.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.473.1-473.1
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• 2014

We report on the characteristics of Zr-doped $In_2O_3$ (IZrO) films prepared by DC-RF magnetron cosputtering of $In_2O_3$ and $ZrO_2$ targets for use as a transparent electrode for high efficient organic solar cells (OSCs). The effect of $ZrO_2$ doping power on electrical, optical, structural, and surface morphology of the IZrO film was investigated in detail. At optimized $ZrO_2$ RF power of 50 W, the IZrO film exhibited a low sheet resistance of 20.71 Ohm/square, and a high optical transmittance of 83.9 %. Furthermore, the OSC with the IZrO anode showed a good cell-performance: fill factor of 61.71 %, short circuit current (Jsc) of $8.484mA/cm^2$, open circuit voltage (Voc) of 0.593 V, and power conversion efficiency (PCE) of 3.106 %. In particular, the overall OSC characteristics of the cell with the IZrO anode were comparable to those of the OSC with the conventional Sn-doped $In_2O_3$ (FF of 65.03 %, Jsc of $8.833mA/cm^2$, Voc of 0.608 V, PCE of 3.495 %), demonstrating that the IZrO anode is a promising alternative to ITO anode in OSCs.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.343-343
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• 2014

We reported on the electrical, optical, structural and morphological properties fabricated by co-sputtering for use as an anode for organic solar cells (OSCs). By adjusting RF and DC power of $MoO_3$ and IZO targets during co-sputtering, we fabricated the $MoO_3$-IZO electrode with graded content of the $MoO_3$ on the IZO films. At optimized $MoO_3$ thickness of 20 nm, the $MoO_3$ graded IZO electrode showed a higher mobility ($33cm^2/V-Sec$) than directly deposited $MoO_3$ on IZO film ($26cm^2/V-Sec$). At visible range (400nm~800nm), optical transmittance of the $MoO_3$ graded IZO electrode is higher than that of directly deposited $MoO_3$ on IZO film. High mobility of $MoO_3$ graded on IZO is attributed to less interface scattering between $MoO_3$ and IZO. To investigate the feasibility of $MoO_3$ graded IZO films, we fabricated conventional P3HT:PCBM based OSCs with $MoO_3$ graded IZO as a function of MoO3 thickness. The OSC fabricated on the $MoO_3$ graded IZO anode showed a fill factor of 66.53%, a short circuit current of $8.121mA/cm^2$, an open circuit voltage of 0.592 V, and a power conversion efficiency of 3.2% comparable to OSC fabricated on ITO anode and higher than directly deposited $MoO_3$ on IZO film. We suggested possible mechanism to explain the high performance of OSCs with a $MoO_3$ graded IZO.