• Title/Summary/Keyword: RF tunable

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Dual Wavelength Erbium-doped Fiber Laser with Lasing Wavelength Switchability and Tunability (파장 가변 및 스위칭이 가능한 쌍파장 어븀 첨가 광섬유 레이저)

  • Park, Sang-Oh;Shim, Young-Bo;Yoon, Min-Seok;Chu, Su-Ho;Kim, Hyun-Joo;Kwon, Oh-Jang;Han, Young-Geun
    • Korean Journal of Optics and Photonics
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    • v.21 no.5
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    • pp.181-184
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    • 2010
  • A simple technique for a flexibly tunable and switchable dual wavelength-switchable erbium-doped fiber (EDF) laser using fiber Bragg gratings is proposed and demonstrated by using both linear cavity loss controlling and homogeneous gain broadening of the EDF. The oscillating wavelength switching is successfully realized by using the modulation of the acousto-optic modulator driven by the RF signal. The wavelength spacing and lasing wavelength of the proposed wavelength-switchable laser can also be controlled by using the bending-induced tension or compression strain. The proposed tunable dual wavelength-switchable fiber laser has a lot of advantages, such as a high extinction ratio larger than 40dB and a high tunability of ~7.2 nm/$m^{-1}$.

Pulsed-Bias Pulsed-RF Passive Load-Pull Measurement of an X-Band GaN HEMT Bare-chip (X-대역 GaN HEMT Bare-Chip 펄스-전압 펄스-RF 수동 로드-풀 측정)

  • Shin, Suk-Woo;Kim, Hyoung-Jong;Choi, Gil-Wong;Choi, Jin-Joo;Lim, Byeong-Ok;Lee, Bok-Hyung
    • The Journal of The Korea Institute of Intelligent Transport Systems
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    • v.10 no.1
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    • pp.42-48
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    • 2011
  • In this paper, a passive load-pull using a GaN HEMT (Gallium Nitride High Electron Mobility Transistor) bare-chip in X-band is presented. To obtain operation conditions that characteristic change by self-heating was minimized, pulsed drain bias voltage and pulsed-RF signal is employed. An accuracy impedance matching circuits considered parasitic components such as wire-bonding effect at the boundary of the drain is accomplished through the use of a electro-magnetic simulation and a circuit simulation. The microstrip line length-tunable matching circuit is employed to adjust the impedance. The measured maximum output power and drain efficiency of the pulsed load-pull are 42.46 dBm and 58.7%, respectively, across the 8.5-9.2 GHz band.

A study of the sidelobe supprion in an acousto-optic wavelength tunable filter utilizing a SAW-guide directional coupler (방향성 결합구조의 음향파 도파로를 이용한 음향광학형 파장가변 광 필터의 부모드 억제에 관한 연구)

  • 임경훈;정홍식
    • Korean Journal of Optics and Photonics
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    • v.11 no.6
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    • pp.423-428
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    • 2000
  • We have demonstrated a -8 dB additional reduction in the intensity sidelobe of an apodized-interaction-strength guide-wave acousto-optic filter with a center passband of 1551.6 nm. Acoustic-intensity weighting was achieved by launching a surface acoustic wave (SAW) beam in a straight acoustic waveguide, and gradually transferring this SAW intensity to the active device, and back out, by evanescent-wave coupling across a 50 !lm barrier over a 19 rom interaction length. The intensity sidelobe was -4.27 dB for an unapodized filter with abmpt onset and cutoff of the interaction, but sidelobes were reduced to at most -12.68 dB for a SAW intensity with raised-cosine weighting. The RF driving power was 17.78 mW. A linear tuning rate of 8.86 nmIMHz and a spectral width of -1.7 nm were demonstrated. rated.

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Integrated 3-D Microstructures for RF Applications (Invited)

  • Euisik Yoon;Yoon, Jun-Bo;Park, Eun-Chul;Han, Chul-Hi;Kim, Choong-Ki
    • Proceedings of the IEEK Conference
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    • 1999.11a
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    • pp.203-207
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    • 1999
  • In this paper we report new integration technology developed for three-dimensional metallic microstructures in an arbitrary shape. We have developed the two fabrication methods: Multi-Exposure and Single-Development (MESD) and Sacrificial Metallic Mold(SMM) techniques. Three-dimensional photoresist mold can be formed by the MESD method while unlimited number of structural levels can be realized by the SMM technique. Using these two techniques we have fabricated solenoid inductors and levitated spiral inductors for RF applications. We have achieved peak Q- factors over 40 in the 2-10㎓ range, the highest number among the inductors reported to date. Finally, we propose "On-Chip Passives" as a post IC process for monolithic integration of inductors, tunable capacitors, microwave switches, transmission lines, and mixers and filters toward future single-chip transceiver integration.

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A CMOS TX Leakage Canceller Using an Autotransformer for RFID Application (오토트랜스포머를 이용한 RFID용 CMOS 송신 누설 신호 제거기)

  • Choi, In-Duck;Kwon, Ick-Jin
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.8
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    • pp.784-789
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    • 2011
  • In this paper, a tunable integrated transmitter leakage canceller based on an autotransformer for ultra-high-frequency (UHF) RFID readers is presented. The proposed TX leakage canceller consists of an autotransformer, a digital tuning capacitor, a voltage controlled tuning resistor, and a compensating amplifier, and it is designed using 0.13 ${\mu}m$ 1-poly 6-metal RF CMOS process. The simulation results show that the proposed structure has over 55 dB rejection characteristic between a transmitter and a receiver and a 2.5 dB of the RX insertion loss. The TX leakage canceller can be digitally tuned from 825 MHz to 985 MHz with the tuning capacitor and it can be fully integrated.

A Wireless Video Streaming System for TV White Space Applications (TV 유휴대역 응용을 위한 무선 영상전송 시스템)

  • Park, Hyeongyeol;Ko, Inchang;Park, Hyungchul;Shin, Hyunchol
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.26 no.4
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    • pp.381-388
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    • 2015
  • In this paper, a wireless video streaming system is designed and implemented for TV white space applications. It consists of a RF transceiver module, a digital modem, a camera, and a LCD screen. A VGA resolution video is captured by a camera, modulated by modem, and transmitted by RF transceiver module, and finally displayed at a destination 2.6-inch LCD screen. The RF transceiver is based on direct-conversion architecture. Image leakage is improved by low pass filtering LO, which successfully covers the TVWS. Also, DC offset problem is solved by current steering techniques which control common mode level at DAC output node. The output power of the transmitter and the minimum sensitivity of the receiver is +10 dBm and -82 dBm, respectively. The channel bandwidth is tunable among 6, 7 and 8 MHz according to regulations and standards. Digital modem is realized in Kintex-7 FPGA. Data rate is 9 Mbps based on QPSK and 512ch OFDM. A VGA video is successfully streamed through the air by using the developed TV white-space RF communication module.

Design of a Multi-Band Low Noise Amplifier for 3GPP LTE Applications in 90nm CMOS (3GPP LTE를 위한 다중대역 90nm CMOS 저잡음 증폭기의 설계)

  • Lee, Seong-Ku;Shin, Hyun-Chol
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.47 no.5
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    • pp.100-105
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    • 2010
  • A multi-band low noise amplifier (LNA) is designed in 90 nm RF CMOS process for 3GPP LTE (3rd Generation Partner Project Long Term Evolution) applications. The designed multi-band LNA covers the eight frequency bands between 1.85 and 2.8 GHz. A tunable input matching circuit is realized by adopting a switched capacitor array at the LNA input stage for providing optimum performances across the wide operating band. Current steering technique is adopted for the gain control in three steps. The performances of the LNA are verified through post-layout simulations (PLS). The LNA consumes 17 mA at 1.2 V supply voltage. It shows a power gain of 26 at the normal gain mode, and provides much lower gains of 0 and -6.7 in the bypass-I and -II modes, respectively. It achieves a noise figure of 1.78 dB and a IIP3 of -12.8 dBm over the entire band.

Design and Fabrication of Reflective Array Type Wideband SAW Dispersive Delay Line

  • Choi Jun-Ho;Yang Jong-Won;Nah Sun-Phil;Jang Won
    • Journal of electromagnetic engineering and science
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    • v.6 no.2
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    • pp.110-116
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    • 2006
  • A reflective array type surface acoustic wave(SAW) dispersive delay line(DDL) with high time-bandwidth at the V/UHF-band is designed and fabricated for compressive receiver applications. This type of the SAW DDL has the properties of the relative bandwidth of 20 %, the time delay of 49.89 usec, the insertion loss of 38.5 dB and the side lobe rejection of 39 dB. In comparison with a commercial SAW DDL, the insertion loss, amplitude ripple and side lobe rejection are improved by $1.5dB{\pm}0.6dB$ and 4 dB respectively. Using the fabricated SAW DDL, the prototype of the compressive receiver is developed. It is composed of RF converter, fast tunable LO, chirp LO, A/D converter, signal processing unit and control unit. This prototype system shows a fine frequency resolution of below 30 kHz with high scan rate.

$0.18{\mu}m$ CMOS Quadrature VCO for IEEE 802.11a WLAN Application

  • Son, Chul-Ho;Kim, Bok-Ki
    • Proceedings of the IEEK Conference
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    • 2008.06a
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    • pp.529-530
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    • 2008
  • The proposed CMOS Quadrature VCO for WLAN application was designed in TSMC $0.18\;{\mu}m$ RF CMOS technology. The QVCO based on NMOS back-gate as a coupling transistor and switched capacitors array without tail transistors is designed to generate quadrature output signals. The simulated results show that the QVCO core consumed 3.67 mA and 6.6 mW from a 1.8 V supply. The QVCO is tunable between $4.76\;GHz\;{\sim}\;6.35\;GHz$ and has a phase noise lower than -116.8 ㏈c/Hz at 1 MHz offset over the entire tuning range

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Silicon Fabry-Perot Tunable Thermo-Optic Filter (실리콘 파브리-페로 파장가변 열광학 필터)

  • Park, Su-Yeon;Kang, Dong-Heon;Kim, Young-Ho;Gil, Sang-Keun
    • Journal of IKEEE
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    • v.12 no.3
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    • pp.131-137
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    • 2008
  • A silicon Fabry-Perot tunable thermo-optic filter for WDM using the thin film silicon coating is proposed and experimented. The filter is implemented by using the CMP process and polishing both sides of the commercial silicon wafer with normal thickness of 100${\mu}m{\pm}$1%. The filter also has 2-layer or 3-layer dielectrics thin film coating mirror which are alternated ${\lambda}$/4 layers of $SiO_2$($n_{low}$=1.44) and a-Si($n_{high}$=3.48) for the central wavelength of 1550nm by RF sputtering. The experiment shows that FSR is 3.61nm and FWHM is 0.56nm and the finesse is 6.4 for 2-layer mirror with the reflection of 61%, and that FSR is 3.36nm and FWHM is 0.13nm and the finesse is 25.5 for 3-layer mirror with the reflection of 89%. According to thermo-optic effect, the transmitted central wavelength of 1549.73nm at $23^{\circ}C$ is shifted to 1550.91nm at $30^{\circ}C$ and 1553.46nm at $60^{\circ}C$ for 2-layer mirror, and the transmitted central wavelength of 1549.83nm at $23^{\circ}C$ is shifted to 1550.92nm at $30^{\circ}C$ and 1553.07nm at $60^{\circ}C$ for 3-layer mirror.

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