• Title/Summary/Keyword: RF tunable

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A CMOS Wideband RF Energy Harvester Employing Tunable Impedance Matching Network for Video Surveillance Disposable IoT Applications (가변 임피던스 매칭 네트워크를 이용한 영상 감시 Disposable IoT용 광대역 CMOS RF 에너지 하베스터)

  • Lee, Dong-gu;Lee, Duehee;Kwon, Kuduck
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.68 no.2
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    • pp.304-309
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    • 2019
  • This paper presents a CMOS RF-to-DC converter for video surveillance disposable IoT applications. It widely harvests RF energy of 3G/4G cellular low-band frequency range by employing a tunable impedance matching network. The proposed converter consists of the differential-drive cross-coupled rectifier and the matching network with a 4-bit capacitor array. The proposed converter is designed using 130-nm standard CMOS process. The designed energy harvester can rectify the RF signals from 700 MHz to 900 MHz. It has a peak RF-to-DC conversion efficiency of 72.25%, 64.97%, and 66.28% at 700 MHz, 800 MHz, and 900 MHz with a load resistance of 10kΩ, respectively.

AlN Based RF MEMS Tunable Capacitor with Air-Suspended Electrode with Two Stages

  • Cheon, Seong J.;Jang, Woo J.;Park, Hyeon S.;Yoon, Min K.;Park, Jae Y.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.13 no.1
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    • pp.15-21
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    • 2013
  • In this paper, a MEMS tunable capacitor was successfully designed and fabricated using an aluminum nitride film and a gold suspended membrane with two air gap structure for commercial RF applications. Unlike conventional two-parallel-plate tunable capacitors, the proposed tunable capacitor consists of one air suspended top electrode and two fixed bottom electrodes. One fixed and the top movable electrodes form a variable capacitor, while the other one provides necessary electrostatic actuation. The fabricated tunable capacitor exhibited a capacitance tuning range of 375% at 2 GHz, exceeding the theoretical limit of conventional two-parallel-plate tunable capacitors. In case of the contact state, the maximal quality factor was approximately 25 at 1.5 GHz. The developed fabrication process is also compatible with the existing standard IC (integrated circuit) technology, which makes it suitable for on chip intelligent transceivers and radios.

High-Tunable Capacitor Using a Multi-Layer Dielectric Thin Film for Reconfigurable RF Circuit Applications (재구성 RF 회로 응용을 위한 다층유전체 박막을 이용한 고-가변형 커패시터)

  • Lee, Young-Chul;Lee, Baek-Ju;Ko, Kyung-Hyun
    • Journal of Advanced Navigation Technology
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    • v.16 no.6
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    • pp.1038-1043
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    • 2012
  • In this work, a high tunable capacitor using a multi-layer dielectric of BZN/BST/BZN is designed and characterized for reconfigurable RF applications. By utilizing a high tunable BST ferroelectric and a low-loss BZN paraelectric thin film, a multi-layer dielectric of BZN/BST/BZN obtained a tunability of 47 % and $tan{\delta}$ of 0.005. The fabricated tunable capacitor on a quartz wafer using this multi-layer dielectric achieved a Q-factor of 10 and tunability of 60 % at 800 MHz and 15 V. Its size is $327{\times}642{\mu}m2$.

RF MEMS Switches and Integrated Switching Circuits

  • Liu, A.Q.;Yu, A.B.;Karim, M.F.;Tang, M.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.7 no.3
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    • pp.166-176
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    • 2007
  • Radio frequency (RF) microelectromechanical systems (MEMS) have been pursued for more than a decade as a solution of high-performance on-chip fixed, tunable and reconfigurable circuits. This paper reviews our research work on RF MEMS switches and switching circuits in the past five years. The research work first concentrates on the development of lateral DC-contact switches and capacitive shunt switches. Low insertion loss, high isolation and wide frequency band have been achieved for the two types of switches; then the switches have been integrated with transmission lines to achieve different switching circuits, such as single-pole-multi-throw (SPMT) switching circuits, tunable band-pass filter, tunable band-stop filter and reconfigurable filter circuits. Substrate transfer process and surface planarization process are used to fabricate the above mentioned devices and circuits. The advantages of these two fabrication processes provide great flexibility in developing different types of RF MEMS switches and circuits. The ultimate target is to produce more powerful and sophisticated wireless appliances operating in handsets, base stations, and satellites with low power consumption and cost.

A Varactor-Tuned RF Tunable Bandpass Filter with Improved Passband Flatness

  • Kim, Byung-Wook;Yun, Du-Il;Yun, Sang-Won
    • Journal of electromagnetic engineering and science
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    • v.2 no.2
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    • pp.124-127
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    • 2002
  • A RF tunable bandpass filter using dielectric resonators and varactor diodes is redesigned to improve the passband flatness. Since the tunable liters are generally of narrow bandwidth and the Q value of the varactor diode is usually very low, the passband flatness is strongly deteriorated by sizeable distortion loss. To remedy this problem, we construct modified Chebyshev type filter by use of network synthesis techniques. The key of modified Chebyshev type filter is the rearrangement of the passband poles to improve the passband flatness. To maintain the constant passband bandwidth, design techniques of input/output stage and coupling windows are also applied. Experimental results show that the passband flatness can be improved by purposed method without any additional RF amplitude equalizer.

A Frequency Stable and Tunable Optoelectronic Oscillator Using an Optical Phase Shifter and a Phase-shifted Fiber Bragg Grating

  • Wu, Zekun;Zhang, Jiahong;Wang, Yao
    • Current Optics and Photonics
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    • v.6 no.6
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    • pp.634-641
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    • 2022
  • A frequency stable and tunable optoelectronic oscillator (OEO) incorporating an optical phase shifter and a phase-shifted fiber Bragg grating (PS-FBG) is designed and analyzed. The frequency tunability of the OEO can be realized by using a tunable microwave photonic bandpass filter consisting of a PS-FBG, a phase modulator. The optical phase compensation loop is used to compensate for the phase variations of the RF signal from the OEO by adjusting an optical phase shifter. Simulation results demonstrate that the output RF signals of the OEO can be tuned in a frequency range of 118 MHz to 24.092 GHz. When the ambient temperature fluctuates within ±3.9 ℃, the frequency drifts of the output RF signals are less than 68 Hz, the side-mode suppression ratios are more than 69.39 dB, and the phase noise is less than -92.49 dBc/Hz at a 10 kHz offset frequency.

SIP based Tunable BPF for UHF TV Tuner Applications (UHF대역 TV 튜너에 적용을 위한 가변형 대역통과필터)

  • Lee, Tae-C.;Park, Jae-Y.
    • The Transactions of The Korean Institute of Electrical Engineers
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    • v.57 no.11
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    • pp.2127-2130
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    • 2008
  • In this paper, a tunable bandpass filter with mutual inductive coupling circuits is newly designed and demonstrated for UHF TV tuner ranged from Ch.14(473MHz) to Ch.69(803MHz) applications. Conventional HF tuning circuit with an electromagnetic bandpass filter has several problems such as large size, high volume and high cost, since the electromagnetic filter is comprised of several passive components and air core inductors to be assembled and controlled manually. To address these obstacles, peaking chip inductor was newly applied for constructing the mutual inductive coupling circuit. The proposed circuit was newly and optimally designed, since the chip inductor showed lower components Q-value than the air core inductor. A varactor diode has been also used to fabricate the proposed tunable bandpass filter for RF tuning circuit. The fabricated tunable filter exhibited low insertion loss of approximately -3dB, high return loss of below -10dB, and large tuning bandwidth of 330MHz.

Design and Implementation of a Frequency Tunable Bandpass Filter for TVWS (TVWS용 주파수가변 대역통과필터의 설계 및 구현)

  • Kang, Sanggee
    • Journal of Satellite, Information and Communications
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    • v.11 no.4
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    • pp.44-47
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    • 2016
  • In these days, interest of systems and services using TVWS(TV White Space) are increased, communication systems and services for TVWS have been actively studied. The unoccupied frequency in TVWS is different according to the geographical location and the time of day. RF systems having a frequency tunable bandpass filter operated in TVWS could be efficiently used. In this paper, a frequency tunable bandpass filter operated in 470 ~ 698MHz is designed and implemented. In consideration of simple control and physical size, the tunable bandpass filter is designed with 2-pole. The implemented tunable bandpass filter has the operating frequency band of 470 ~ 698MHz with control voltages of 1.58 ~ 3.93V, the insertion loss of maximum 4.78dB and the return loss of below 10dB. The implemented frequency tunable bandpass filter can be directly used in the RF receiver for TVWS and the design procedures could be used for developing a high power tunable bandpass filter as the basic research data.

RF MEMS Devices for Wireless Applications

  • Park, Jae Y.;Jong U. Bu;Lee, Joong W.
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.1 no.1
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    • pp.70-83
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    • 2001
  • In this paper, the recent progress of RF MEMS research for wireless/mobile communications is reviewed. The RF MEMS components reviewed in this paper include RF MEMS switches, tunable capacitors, high Q inductors, and thin film bulk acoustic resonators (TFBARs) to become core components for constructing miniaturized on chip RF transceiver with multi-band and multi-mode operation. Specific applications are also discussed for each of these components with emphasis on for miniaturization, integration, and performance enhancement of existing and future wireless transceiver developments.

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