• Title/Summary/Keyword: RF transceiver

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Implementation of a RF transceiver for WRAN System Using Cognitive Radio Technology in TV Whitespace Band (Cognitive Radio 기술 기반의 TV Whitespace대역 WRAN 시스템의 RF 송.수신기 구현)

  • Min, Jun-Ki;Hwang, Sung-Ho;Kim, Ki-Hong;Park, Yong-Woon
    • The Journal of Korean Institute of Communications and Information Sciences
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    • v.35 no.5A
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    • pp.496-503
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    • 2010
  • The implementation of a RF transceiver for WRAN(Wireless Regional Area Network) system based on IEEE 802.22 standard using Cognitive Radio technology is presented in this paper. A CMOS RF transceiver IC for WRAN system operates in VHF/UHF(54~862MHz) broadband, and employs dual-path direct-conversion configuration and the in-band harmonic distortions are effectively suppressed by exploiting the dual-path direct conversion architecture. For 64QAM(3/4 coding rate) OFDM signal, an EVM of <-31.4dB(2.7%) has been achieved at 10dBm off-chip PA output power and the total chip area with pads is 12.95 mm2. The experimental results show that the proposed CMOS RF transceiver IC has perfect performance for WRAN system based on TDD(Time Division Duplex) mode.

Low-Power Direct Conversion Transceiver for 915 MHz Band IEEE 802.15.4b Standard Based on 0.18 ${\mu}m$ CMOS Technology

  • Nguyen, Trung-Kien;Le, Viet-Hoang;Duong, Quoc-Hoang;Han, Seok-Kyun;Lee, Sang-Gug;Seong, Nak-Seon;Kim, Nae-Soo;Pyo, Cheol-Sig
    • ETRI Journal
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    • v.30 no.1
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    • pp.33-46
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    • 2008
  • This paper presents the experimental results of a low-power low-cost RF transceiver for the 915 MHz band IEEE 802.15.4b standard. Low power and low cost are achieved by optimizing the transceiver architecture and circuit design techniques. The proposed transceiver shares the analog baseband section for both receive and transmit modes to reduce the silicon area. The RF transceiver consumes 11.2 mA in receive mode and 22.5 mA in transmit mode under a supply voltage of 1.8 V, in which 5 mA of quadrature voltage controlled oscillator is included. The proposed transceiver is implemented in a 0.18 ${\mu}m$ CMOS process and occupies 10 $mm^2$ of silicon area.

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Design and Implementation of Base Station Transceiver for Wideband CDMA PCS System (Wideband CDMA PCS 기지국용 송수신기 설계 및 구현)

  • 정영준;김봉겸;이일규;박재홍
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.8 no.1
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    • pp.61-72
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    • 1997
  • The implementation of base station transceiver for Wideband CDMA(Code Division Multiple Access) PCS(Personal Communication Service) system using spread spectrum CDMA technology is presented in this paper. The receiver that requires wide dynamic range and high sensitivity and the transmitter that has good spurious emission supression were designed and implemented with 5 MHz RF channel bandwidth. This paper shows the some factors that should be considered and simulated using the RF simulation S/W with commercial and customized components. The implemented transceiver based on the simulation gave good results that satisfied the functional specifications of the transceiver.

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A Compact Integrated RF Transceiver Module for 2.4 GHz Band Using LTCC Technology (LTCC 기술을 적용한 집적화된 2.4 GHz 대역 무선 송수신 모듈 구현)

  • Kim, Dong-Ho;Kim, Dong-Su;Ryu, Jong-In;Kim, Jun-Chul;Park, Chong-Dae;Park, Jong-Chul
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.22 no.2
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    • pp.154-161
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    • 2011
  • This paper presents a compact integrated transceiver module for 2.4 GHz band applications using Low Temperature Co-fired Ceramic(LTCC) technology. The implemented transceiver module is divided into an RF Front-End Module (FEM) part and a transceiver IC chip part. The RF FEM part except an SPDT switch and DC block capacitors is fully embedded in the LTCC substrate. The fabricated RF FEM has 8 pattern layers and it occupies less than $3.3\;mm{\times}5.2\;mm{\times}0.4\;mm$. The measured results of the implemented RF FEM are in good agreement with the simulated results. The transceiver IC chip part consists of signal line, power line and transceiver IC for 2.4 GHz band communication system. The fabricated transceiver module has 9 layers including three inner grounds and it occupies less than $12\;mm{\times}8.0\;mm{\times}1.1\;mm$. The implemented transceiver module provides an output power of 18.1 dBm and a sensitivity of -85 dBm.

A RF Frong-End CMOS Transceiver for 2㎓ Dual-Band Applications

  • Youn, Yong-Sik;Kim, Nam-Soo;Chang, Jae-Hong;Lee, Young-Jae;Yu, Hyun-Kyu
    • JSTS:Journal of Semiconductor Technology and Science
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    • v.2 no.2
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    • pp.147-155
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    • 2002
  • This paper describes RF front-end transceiver chipset for the dual-mode operation of PCS-Korea and IMT-2000. The transceiver chipset has been implemented in a $0.25\mutextrm{m}$ single-poly five-metal CMOS technology. The receiver IC consists of a LNA and a down-mixer, and the transmitter IC integrates an up-mixer. Measurements show that the transceiver chipset covers the wide RF range from 1.8GHz for PCS-Korea to 2.1GHz for IMT-2000. The LNA has 2.8~3.1dB NF, 14~13dB gain and 5~4dBm IIP3. The down mixer has 15.5~16.0dB NF, 15~13dB power conversion gain and 2~0dBm IIP3. The up mixer has 0~2dB power conversion gain and 6~3dBm OIP3. With a single 3.0V power supply, the LNA, down-mixer, and up-mixer consume 6mA, 30mA, and 25mA, respectively.

TOC (Transceiver-on-Chip)를 위한 RF MEMS (Micro Electromechanical Systems) 기술

  • 전국진;성우경
    • Proceedings of the International Microelectronics And Packaging Society Conference
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    • 2001.11a
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    • pp.55-60
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    • 2001
  • RF MEMS is an exciting emerging technology that has great potential to develop TOC (Transceiver-on-Chip). Applications of the RF MEMS to wireless communications systems are presented. The ability of the RF MEMS technology to enhance the performance and to reduce the size of passive components, in particular, switches, inductors, and tunable capacitors, is addressed. A number of potential wireless system opportunities for the TOC are awaiting the maturation of the RF MEMS technology.

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Implementation of 2.45GHz RF Transceiver System of USN (USN용 2.45GHz RF Transceiver 시스템 구현)

  • Kim, Ji-Eun;Kim, Nae-Soo
    • Proceedings of the IEEK Conference
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    • 2007.07a
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    • pp.135-136
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    • 2007
  • 2.45 GHz RF Transceiver composed RF module and Digital module for USN(Ubiquitous Sensor Network) has been implemented in this paper. The proposed RF system is designed based on IEEE 802.15.4-2006 PHY standard which has a frequency range from $2.4{\sim}2.4835GHz$. In this transmitter chain, the output power is controlled form 0 to 30 dBm. In this receiver chain, less than 20 dB of NF was obtained.

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A Study on the 300MHz NMR Transceiver (300MHz급 NMR Transceiver 설계 및 제작)

  • Park, Yang-Ha;Jin, Seung-Oh;Won, Jin-Im;Huh, Young
    • Proceedings of the KIEE Conference
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    • 2000.07d
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    • pp.3210-3212
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    • 2000
  • We designed and manufactured 300MHz NMR RF Transceiver. NMR system is composed of NMR Spectrometer, Superconductive Magnet and Pulse Programmer, GUI. NMR RF Transceiver is composed of transmitter, receiver, frequency synthesizer. T/R switch, main power amp., RF coil. To phase modulation, transmitter is composed of mixer, splitter and combiner et al. To weak signal detection, receiver is composed of pre-amp., filter, mixer et al. Each module is manufactured PCB. And installed NMR system to detect chemical component of specimen. In result, we can get the information of specimen.

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Implementation of a CMOS RF Transceiver for 900MHz ZigBee Applications (ZigBee 응용을 위한 900MHz CMOS RF 송.수신기 구현)

  • Kwon, J.K.;Park, K.Y.;Choi, Woo-Young;Oh, W.S.
    • Journal of the Institute of Electronics Engineers of Korea TC
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    • v.43 no.11 s.353
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    • pp.175-184
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    • 2006
  • In this paper, we describe a 900MHz CMOS RF transceiver using an ISM band for ZigBee applications. The architecture of the designed rx front-end, which consists of a low noise amplifier, a down-mixer, a programmable gain amplifier and a band pass filter. And the tx front-end, which consists of a band pass filter, a programmable gain amplifier, an up-mixer and a drive amplifier. A low-if topology is adapted for transceiver architecture, and the total current consumption is reduced by using a low power topology. Entire transceiver is verified by means of post-layout simulation and is implemented in 0.18um RF CMOS technology. The fabricated chip demonstrate the measured results of -92dBm minimum rx input level and 0dBm maximum tx output level. Entire power consumption is 32mW(@1.8VDD). Die area is $2.3mm{\times}2.5mm$ including ESD protection diode pads.

A Design an Implementation of a Base Station Transceiver for WLL System (무선 가입자 접속망 기지국용 송수신기 설계 및 구현)

  • 정영준;강상기;이일규;김봉겸;홍헌진
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.8 no.6
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    • pp.600-613
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    • 1997
  • The implementation of a BTS(Base station Transceiver) for WLL system using W-CDMA(Wideband-Code Division Multiple Access) method is presented in this paper. It consists of three boards; receiver, transmitter and RF controller. Some RF parameters are considered and simulated by the RF simulation S/W using commercial and customized components specifications. The implemented transceiver of 5 MHz RF channel bandwidth satisfies the system requirements of a transceiver such as dynamic range, sensitivity in the receiver and spurious emission suppression in the transmitter. At the receiver, the experimental measurement showed 2.86 dB of NF and 60 dB above of dynamic range in AGC(Automatic Gain Control) locking. At the transmitter, the -49.46 dBc of spurious emission suppression is attained when the output power of the transmitter is 34.3 dBm. These results are good enough to meet to standard performance specifications.

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