• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.233.2-233.2
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• 2016

Graphite의 순도, 결함, 결정층, 전기저항이 개선을 위하여, 10,000K 이상의 초고온 RF 열플라즈마 처리에 관한 연구를 수행하였다. 방전가스는 Ar을 사용하고, 특성 개선을 위하여 첨가가스로 $H_2$, $CH_4$을 첨가하여 흑연의 열플라즈마 처리에 의한 특성을 고찰하였다. Energy Dispersion Spectroscopy을 이용한 탄소 함량 분석 결과, 75wt% 저급 흑연에 함유된 유무기 불순물은 고온의 플라즈마에 의해 제거되어 99wt% 이상으로 순도가 개선되었고, XRD 및 Raman 분석으로부터 고온 열처리를 통한 탄소원자의 재배열로 흑연의 $sp^2$결함이 감소되고, 결정성이 향상됨을 확인하였다. 또한 열플라즈마로 처리된 흑연입자에 대한 분체저항 측정 결과, $10^{-3}{\Omega}{\cdot}cm$에서 $10{-4}{\Omega}{\cdot}cm$로 감소되었다.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2016년도 제50회 동계 정기학술대회 초록집
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• pp.233.1-233.1
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• 2016

화학적 방법에 의한 NTE graphite의 박리 또는 전도도 개선을 위한 도핑공정을 수행할 경우, 결함 및 불순물 생성에 의해 재결정화 공정 및 순도 개선을 위한 별도의 공정을 필요로한다. 본 연구에서는 건식 방법으로써 10,000K 이상의 초고온 RF 열플라즈마를 이용하여 in-situ 방법으로 흑연의 박리, 결함 제거, 결정성 향상 및 도핑 공정을 수행하고, 도핑특성을 평가하였다. 질소 도핑을 위하여 암모니아 가스를 첨가하여 NTE graphite를 도핑 처리하였으며, 시뮬레이션을 통하여 반응기 내부의 온도분포를 파악하고, 도핑을 위한 암모니아가스가 분해되어 도핑공정이 수행될 수 있는 투입위치를 결정하였다. 질소 도핑율은 암모니아 가스의 주입위치에서의 온도 및 가스 주입 유량 등의 공정조건에 따라 변화됨을 확인하였고, XPS 분석결과 최대 14.87 atomic%의 도핑율의 결과를 얻었다.

• 한국결정성장학회지
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• 제24권1호
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• pp.1-7
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• 2014

질화알루미늄(AlN)은 뛰어난 열적, 전기절연성 특성을 갖고 있어 반도체 기판용 재료나 전자 패키징 재료로 주목받고 있다. 질화알루미늄은 소결온도가 높고 불순물로 인한 물성저하 때문에 고순도화 및 나노원료화가 필수적이다. 본 연구에서는 RF 유도결합 열플라즈마를 이용하여 알루미늄 분말로부터 고순도의 질화알루미늄 나노분말을 합성하였다. Sheath gas로 사용된 암모니아의 유량 제어를 통해 고순도의 질화알루미늄 나노분말이 합성되는 조건을 확립하고자 하였으며 합성된 분말은 XRD, SEM, TEM, BET, FTIR, N-O분석을 통해 특성분석을 진행하였다.

• 한국재료학회지
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• 제33권6호
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• pp.257-264
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• 2023

To develop a high capacity lithium secondary battery, a new approach to anode material synthesis is required, capable of producing an anode that exceeds the energy density limit of a carbon-based anode. This research synthesized carbon nano silicon composites as an anode material for a secondary battery using the RF thermal plasma method, which is an ecofriendly dry synthesis method. Prior to material synthesis, a silicon raw material was mixed at 10, 20, 30, 40, and 50 wt% based on the carbon raw material in a powder form, and the temperature change inside the reaction field depending on the applied plasma power was calculated. Information about the materials in the synthesized carbon nano silicon composites were confirmed through XRD analysis, showing carbon (86.7~52.6 %), silicon (7.2~36.2 %), and silicon carbide (6.1~11.2 %). Through FE-SEM analysis, it was confirmed that the silicon bonded to carbon was distributed at sizes of 100 nm or less. The bonding shape of the silicon nano particles bonded to carbon was observed through TEM analysis. The initial electrochemical charging/discharging test for the 40 wt% silicon mixture showed excellent electrical characteristics of 1,517 mAh/g (91.9 %) and an irreversible capacity of 133 mAh/g (8.1 %).

• 한국진공학회:학술대회논문집
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• 한국진공학회 2014년도 제46회 동계 정기학술대회 초록집
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• pp.236.1-236.1
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• 2014

Compounds of Ga, such as gallium oxide (Ga2O3) and gallium nitride (GaN), are of interest due to its unique properties in semiconductor application. In particular, GaN has the potentially application for optoelectronic device such as light-emitting diodes (LEDs) and laser diodes (LDs) [1]. Nanoparticle is an interesting material due to its unique properties compared to the bulk equivalents. In this report, we develop a synthesizing method for gallium nitride nanoparticle using non-thermal plasma. For gallium source, the gallium is heated by thermal conduction of tungsten boat which is heated by eddy current induced from RF current in antenna. Nitrogen source for nanoparticle synthesis are from inductively coupled plasma with N2 gas. The synthesized nano particles are analyzed using field-emission scanning microscope (FESEM), transmission electron microscope (TEM) and x-ray photoelectron spectroscopy (XPS). The synthesized particles are investigated and discussed in wide range of experiment conditions such as flow rate, pressure and RF power.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1991년도 추계학술대회 논문집 학회본부
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• pp.265-268
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• 1991

In the study, PPTMDSO(plasma-polymerized tetramethyldisiloxane) films were deposited on on glass substrate in a paralled plate reactor. As the function of RF power increased from 20 W to 110 W, and the substrate temperature increased from $25^{\circ}C$ to $100^{\circ}C$, the deposit ion rate, increased. When oxygen was intentionally added in monomer vapor, the concentration of Si-O-Si bonds increased while C-H, Si-H, -CH3, Si(CH3)x, -CH3, and Si-C bonds decreased in IR spectra. Thermal stability of PPTMSDO film were investigated and weight loss at $800^{\circ}C$ was 7.3 %.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제55권1호
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• pp.30-33
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• 2006

Transparent indium tin oxide (ITO) anode surface was modified using $O_3$ Plasma and organic ultrathin buffer layers were deposited on the ITO surface using 13.56 MHz RF plasma polymerization technique. The EL efficiency, operating voltage and lifetime of the organic light-emitting device (OLED) were investigated in order to study the effect of the plasma surface treatment and role of plasma polymerized organic ultrathin buffer layer. Poly methylmethacrylate (PMMA) layers were plasma polymerized on the ITO anode as buffer layer between anode and hole transport layer (HTL). The plasma polymerization of the organic ultrathin layer were carried out at a homemade capacitive-coupled RF plasma equipment. N,N'-diphenyl-N,N'(3- methylphenyl)-1,1'-diphenyl-4,4'-diamine (TPD) as HTL, Tris(8-hydroxyquinolinato) Aluminum $(Alq_3)$ as both emitting layer (EML)/electron transport layer (ETL), and aluminum layer as cathode were deposited using thermal evaporation technique. Effects of the plasma surface treatment of ITO and plasma polymerized buffer layers on the OLED performance were discussed.

• 한국세라믹학회지
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• 제41권6호
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• pp.435-438
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• 2004

MOCVD is one of the major deposition techniques for Cu thin films and Ta-Si-N is one of promising barrier metal candidates for Cu with high thermal stability. Effects of hydrogen plasma pretreatment of the underlying Ta-Si-N film surface on the Cu nucleation in Cu MOCVD were investigated using scanning electron microscopy, X-ray photoelectron spectroscopy and Auger electron emission spectrometry analyses. Cu nucleation in MOCVD is enhanced as the rf-power and the plasma exposure time are increased in the hydrogen plasma pretreatment. The optimal plasma treatment process condition is the rf-power of 40 Wand the plasma exposure time of 2 min. The hydrogen gas flow rate in the hydrogen plasma pretreatment process does not affect Cu nucleation much. The mechanism through which Cu nucleation is enhanced by the hydrogen plasma pretreatment of the Ta-Si-N film surface is that the nitrogen and oxygen atoms at the Ta-Si-N film surface are effectively removed by the plasma treatment. Consequently the chemical composition was changed from Ta-Si-N(O) into Ta-Si at the Ta-Si-N film surface, which is favorable for Cu nucleation.

• Carbon letters
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• 제12권1호
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• pp.16-20
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• 2011

Commercial PAN fibers were thermally stabilized at 220 or $240^{\circ}C$ for 30 min. Those fibers were further stabilized using radio-frequency (RF) capacitive plasma discharge during 5 or 15 min. From Fourier transform infrared spectroscopy results, it was observed that an additional plasma treatment led to further stabilization of PAN fibers. After stabilization, carbonization was performed to investigate the final tensile properties of the fabricated carbon fibers (CFs). The results revealed that a combination of thermal and plasma treatment is a possible stabilization process for manufacturing CFs. Morphology of CFs was investigated using scanning electron microscopy. The morphology shows that the plasma stabilization performed by the RF large gap plasma discharge may damage the surface of the CF, so it is necessary to select a proper process condition to minimize the damage.

• Transactions on Electrical and Electronic Materials
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• 제5권3호
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• pp.122-125
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• 2004

ITO films were deposited on polyethylene terephthalate substrate by a dc reactive magnetron sputtering using rf bias without substrate heater and post-deposition thermal treatment. The dependency of rf substrate bias on plasma sputter processing was investigated to control energetic particles and improve ITO film properties. The substrate was applied negative rf bias voltage from 0 to -80 V. The composition of indium, tin, and oxygen atoms is strongly depended on the rf substrate bias. Oxygen deficiency is the highest at rf bias of -20 V. The electrical and optical properties of ITO films also are dominated obviously by negative rf bias.