• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2007.06a
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• pp.222-222
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• 2007

RF circuit을 구현하는데 있어서 기판의 전기적 특성을 정확하게 아는 것은 원하는 결과를 추출하기 위해 매우 중요하다. 본 연구에서는 현재 사용되고 있는 PI 기판의 전기적인 특성인 유효 유전율과 loss tangent 값을 T-resonator률 이용해 정확하게 측정하고자 했다. T-resonator는 microstrip 구조로 구현 되었으며 conductor material은 Cu를 사용하였다. PI 기판의 두께는 25um, Cu의 두께는 PI 기판의 종류에 따라 12um 와 18um, T-resonator line width는 50um로 구현하였다. 또한 공진 주파수에 따라 stub 길이가 다른 10개의 T-resonator를 제작하였다. PI 기판의 유효 유전율을 구하기 위해 stub 길이의 open-end effect와 T-junction effect를 고려하였으며 수식을 통해 정확한 유효 유전률을 추출하였다. 또한 PI 기판의 loss tangent 추출에 필요한 dielectric loss를 추출하기 위해 unload quality factor를 분석하였다. Unload quality factor는 dielectric loss, conductor loss, radiation loss를 구성되며 conductor loss와 radiation loss를 수식에 의해 구하고 dielectric loss를 추출 하였다. 추출 된 dielectric loss를 통해 각각의 T-resonator의 loss tangent 값을 구하였다. T-resonator를 이용한 PI 기판의 측정은 비교적 복잡한 수식에 의해 이루어지지만 정확한 data를 얻을 수 있고 다른 재료의 전기적 특성을 추출하는데 응용이 가능하다.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.5
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• pp.905-909
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• 2007

Crystalline and micro-structural characteristics of ZnO thin films which were deposited on p-Si(100) with cooling naturally down of pre-heated substrate during RF magnetron sputter deposition, were investigated by XRD and SEM in this paper. The film which was prepared on the substrate which was pre-heated to $400^{\circ}C$ before deposition and then cooled naturally down during deposition, showed the most outstanding c-axis preferred orientation. The ZnO thin film having the best crystalline result were applied to SMR type FBAR device and resonance properties of the device were investigated by network analyzer. It showed that resonance frequency was 2.05 GHz, return loss was -30.64 dB, quality factor was 3169 and electromechanical coupling factor was 0.4 %. This deposition method would be very useful for application of surface acoustic wave filter or film bulk acoustic wave resonator.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11b
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• pp.410-413
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• 2001

In this paper, we present results of this that design of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonation circuit and the oscillation circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for acquiring EM(Electromagnetic) characteristics of conductor pattern as well as designing multi-layer VCO, Acquired EM characteristics of the circuit pattern was used like real components at nonlinear RF circuit simulator. Finally VCO is simulated at nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was DuPont #9599, which is applied for L TCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 1[dBm], the phase noise was 102 [dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of l0[mA]

• Proceedings of the Korean Institute of Information and Commucation Sciences Conference
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• 2001.10a
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• pp.621-625
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• 2001

In this article, piezoelectric films and their application for film bulk acoustic resonator (FBAR) devices are presented. The FBAR is composed of piezoelectric film sandwiched between top and bottom electrodes and an acoustic reflector of SiO$_2$/W slatted multilayers. Various FBAR devices were fabricated and evaluated through simulation and measurement. The insertion loss, return loss and Q-factor were observed to be reasonably high and good. The FBAR technology seems very promising particularly for RF band filter application.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2001.11a
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• pp.410-413
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• 2001

In this paper, we present results of this that design of the multi-layer VCO(Voltage Controlled Oscillator), which is composed of the resonation circuit and the oscillation circuit, using EM simulator and nonlinear RF circuit simulator. EM simulator is used for acquiring EM(Electromagnetic) characteristics of conductor pattern as well as designing multi-layer VCO, Acquired EM characteristics of the circuit pattern was used like real components at nonlinear RF circuit simulator. Finally VCO is simulated at nonlinear RF circuit simulator. The material for the circuit pattern was Ag and the dielectric was Dupont ＃9599, which is applied for LTCC process. The structure is constructed with 4 conducting layer. Simulated results showed that the output level was about 1[dBm], the phase noise was 102 [dBc/Hz] at 30[kHz] offset frequency, the harmonics -8dBc, and the control voltage sensitivity of 30[MHz/V] with a DC current consumption of 10[mA].

• The Journal of Korean Institute of Communications and Information Sciences
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• v.38C no.9
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• pp.813-821
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• 2013

In this paper, a vital signal sensor based on impedance variation of resonator is presented. Proposed vital signal sensor can detect the vital signal, such as respiration and heart-beat signal. System is composed of resonator, oscillator, surface acoustic wave (SAW) filter, and power detector. The cyclical movement of a dielectric such as a human body, causes the impedance variation of resonator within the near-field range. So oscillator's oscillation frequency variation is effected on resonator's resonant frequency. SAW filter's skirt characteristic of frequency response can be transformed a small amount of frequency deviation to a large variation. Aim to enhance the existing sensor detection range, proposed sensor operates in 870 MHz ISM band, and detect respiration and heart-beat signal at distance of 120 mm.

• Journal of the Institute of Electronics Engineers of Korea TC
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• v.40 no.3
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• pp.10-17
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• 2003

In this paper, genetic algorithm (GA)-based Thin Film Bulk Acoustic Resonator (FBAR) RF filter design technique is proposed. Since the BVD(Butterworth-Van Dyke) lumped element model is valid only around the resonance, FBAR filter design technique based on BVD circuit has an approximate error. Instead of using BVD model, optimizing filter design method utilizes an analytical electrical impedance equation of FBAR. The geometry of FBAR such as thickness of the piezoelectric layer and area which significantly affect the filter response is optimized by GA. US-PCS Rx Bandpass filter obtained by the proposed technique shows a better response comparing with the typical and BVD-based filter.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.65 no.10
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• pp.1727-1730
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• 2016

Magnetic resonance imaging has a potential to produce clear anatomical as well as functional images of human body. However, the ability to diagnose is limited by signal to noise ratio (SNR) and the resolution of current medical systems. To remove the challenges prevalent due to the use of high field scanners, dedicated radio frequency coils are used. Transverse electromagnetic coils have an advantage of providing homogeneous magnetic field throughout the region but with low signal to noise ratio while surface coils have an advantage of providing higher signal to noise ratio but with low homogeneity. This research combines both the advantage into one by utilizing transmit only transverse electromagnetic radio frequency coils (8 channel) along with receive only surface coils (by varying the number) for better imaging of brain. A 7 Tesla 32-channel close fitting helmet shaped phased-array surface coils along with the combination of 8 channel transmit only transverse electromagnetic coils provided good homogeneity as well as significant SNR improvements throughout the human brain.

• The Transactions of The Korean Institute of Electrical Engineers
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• v.56 no.12
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• pp.2217-2220
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• 2007

In this paper, we propose a new wafer level package (WLP) for the RF MEMS applications. The Film Bulk Acoustic Resonator (FBAR) are fabricated and hermetically packaged in a new wafer level packaging process. With the use of Au-Sn eutectic bonding method, we bonded glass cap and FBAR device wafer which has groove-shaped via formed in the backside. The device wafer includes a electrical bonding pad and groove-shaped via for connecting to the external bonding pad on the device wafer backside and a peripheral pad placed around the perimeter of the device for bonding the glass wafer and device wafer. The glass cap prevents the device from being exposed and ensures excellent mechanical and environmental protection. The frequency characteristics show that the change of bandwidth and frequency shift before and after bonding is less than 0.5 MHz. Two packaged devices, Tx and Rx filters, are attached to a printed circuit board, wire bonded, and encapsulated in plastic to form the duplexer. We have designed and built a low-cost, high performance, duplexer based on the FBARs and presented the results of performance and reliability test.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.23 no.6
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• pp.682-690
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• 2012

In this paper, a highly linear self oscillating mixers(SOM) using second harmonic injections are presented. The H-slot defected ground structure(DGS) is designed as a balanced resonator for oscillation in the proposed SOM. Since the H-slot DGS resonator achieves a high Q factor, it is a suitable structure to provide low phase noise for the oscillator. The single balanced mixer is utilized in this work and it provides good LO-RF isolation since balanced LO signals are suppressed at the RF input port. In order to inject the second harmonic of the IF, we propose two different methods using feedback loops. In the first method, IF achieves a 3.08 dB conversion gain at 226 MHz with input power of -20 dBm at 5 GHz RF input signal. The IF achieves 2 dB conversion gain at 423 MHz with the input power of -20 dBm at 5.2 GHz RF input signal in the second method. The measured IMD3s are 61.8 dB and 65 dB for the each method. These SOMs present improved linearity compared to that without the second harmonic injection because IMD3s are improved by 18. dB and 21 dB for each method.