• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.5
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• pp.475-485
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• 2010

This paper proposes a novel concept for a microstrip resonator that can function as a filter and as an antenna at the same time. The proposed structure consists of an outer ring, an open loop-type inner ring, a circular patch, and three ports. The frequencies where the proposed structure works as a filter and as an antenna, respectively, are determined primarily by the radius of the inner ring and the circular patch. The measured results show that, when the microstrip resonator operates as a filtering device, this filter has about 15.1 % bandwidth at the center frequency of 0.63 GHz and a minimum insertion loss of 1.5 dB within passband. There are three transmission zeros at 0.52 GHz, 1.14 GHz, and 2.22 GHz. In the upper stopband, cross coupling - taking place at the stub of the outer ring - and the open loop-type inner ring produce one transmission zero each. The circular patch generates the dual-mode property of the filter and another transmission zero, whose location can be easily adjusted by altering the size of the circular patch. The proposed structure works as an antenna at 2.7 GHz, showing a gain of 3.8 dBi. Compared to a conventional patch antenna, the proposed structure has a similar antenna gain. At the resonant frequencies of the filter and the antenna, high isolation(less than -25 dB) between the filter port and the antenna port can be obtained.

• Journal of information and communication convergence engineering
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• v.1 no.3
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• pp.129-132
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• 2003

In this paper, cobalt (Co)-electrode FBAR devices fabricated on seven-layered Bragg Reflectors are presented along with their resonance characteristics. ZnO films are used as the resonating material in FBAR devices where the Co electrode is 3000${\AA}$ thick. All processes are preformed in an RF magnetron sputtering system. As a result of characterization, the resonance characteristics are observed to depend strongly on the quality of ZnO film and Bragg Reflectors. In addition, the FBAR devices with W/$SiO_2$ reflectors show good resonance characteristics in term of return loss and quality-factor (Q-factor).

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.06a
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• pp.217-217
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• 2009

This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with 60 ~ 100 ${\mu}m$ lengths, $10\;{\mu}m$ width, and $0.4\;{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the 60 ~ 100 ${\mu}m$ long cantilevers, the fundamental frequency appeared at 373.4 ~ 908.1 kHz. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.12 no.2
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• pp.176-183
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• 2001

A cavity stabilized Gunn oscillator at 24 GHz has been developed with WR-42 waveguide structure by HFSS simulation. The oscillator has been optimized by using a circular iris and cap resonator structure. This oscillator needs 4.5 V DC voltage / 1.2 A current and produces a maximum +21.27 dBm RF power at 24.0675 GHz.

• Journal of information and communication convergence engineering
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• v.3 no.3
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• pp.131-136
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• 2005

The effects of the deposition temperature on the growth characteristics of the ZnO films were studied for film bulk acoustic wave resonator (FBAR) device applications. All films were deposited using a radio frequency (RF) magnetron sputtering technique. It was found that the growth characteristics of the ZnO films have a strong dependence on the deposition temperature from 25 to $350^{\circ}C$. The ZnO films deposited below $200^{\circ}C$ exhibited reasonably good columnar grain structures with a highly preferred c-axis orientation while those above 200°C showed very poor columnar grain structures with a mixed-axis orientation. This study seems very useful for the future FBAR device applications.

• Journal of Biosystems Engineering
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• v.24 no.3
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• pp.235-242
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• 1999

This study was conducted to develop a grain moisture meter using microwave free space transmission technique at X-band frequency. The 10.5GHz microwave oscillator using a dielectric resonator was designed and fabricated to transmit electromagnetic wave through standard horn antenna to a sample holder with the wetted Hwasung and Chuchung rough rice(12.00∼26.25%). To detect the output voltage of transmitted wave from receiving horn antenna, the detector was composed of shottkey diode and RF impedance matching circuit. The regression model for measurement of grain moisture content was developed. Its correlation coefficient and standard error of prediction (SEP) were found to be 0.9882 and 0.657 respectively between measure and predicted moisture contents.

• Journal of the Korean Institute of Telematics and Electronics D
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• v.35D no.5
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• pp.1-10
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• 1998

A GaAs MMIC composed of VCO (voltage controlled oscillator) and mixer for PCS receiver has been developed using 1.mu.m ion implanted GaAs MESFET process. The VCO consists of a colpitts-type oscillator with a dielectric resonator and the circuit configuration of the mixer is a dual-gate type with an asymmetric combination of LO and RF FETs for the improvement of intermodulation characteristics. The common-source self-biasing is used in all circuits including a buffer amplifier and mixer, achieving a single power supply (3V) operation. The total power dissipation is 78mW. The VCO chip shows a phase noise of-99 dBc/Hz at 100KHz offset. The combined VCO/mixer chip shows a flat conversion gain of 2dB, the frequency-tuning factor of 80MHz/volts in the varacter bias ranging from 0.5V to 0.5V , and output IP3 of dBm at varactor bias of 0V. The fabricated chip size is 2.5mm X 1.4mm.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.22 no.4
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• pp.303-306
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• 2009

This paper describes the characteristics of polycrystalline 3C-SiC doubly clamped beam micro resonators. The polycrystalline 3C-SiC doubly clamped beam resonators with $60{\sim}100{\mu}m$ lengths, $10{\mu}m$ width, and $0.4{\mu}m$ thickness were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonant frequency was measured by a laser vibrometer in vacuum at room temperature. For the $60{\sim}100{\mu}m$ long cantilevers, the fundamental frequency appeared at $373.4{\sim}908.1\;kHz$. The resonant frequencies of doubly clamped beam with lengths were higher than simulated results because of tensile stress. Therefore, polycrystalline 3C-SiC doubly clamped beam micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.250-250
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• 2008

This paper describes the resonant characteristics of polycrystalline SiC micro resonators. The $1{\mu}m$ thick polycrystalline 3C-SiC cantilevers with different lengths were fabricated using a surface micromachining technique. Polycrystalline 3C-SiC micro resonators were actuated by piezoelectric element and their fundamental resonance was measured by a laser vibrometer in vacuum at room temperature. For the 100 ~ $40{\mu}m$ long cantilevers, the fundamental frequency appeared at 147.2 kHz - 856.3 kHz. The $100{\mu}m$ and $80{\mu}m$ long cantilevers have second mode resonant frequency at 857.5 kHz and 1.14 MHz. Therefore, polycrystalline 3C-SiC micro resonators are suitable for RF MEMS devices and bio/chemical sensor applications.

• Journal of Communications and Networks
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• v.13 no.6
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• pp.625-632
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• 2011

This paper presents an overview of recent advances in radio frequency and microwave filter topologies for satellite communication systems. Many types of filters have been developed during the last years in order to satisfy the demands of modern applications in both terrestrial systems and onboard spacecrafts, leading to a great variety of aspects such as transfer functions, resonator implementations or coupling structures. This paper revisits some of the last advances in this area, including the modeling and full-wave simulation. Some recent designs using dual-mode cavities along with other novel implementations in ridge waveguide will be shown.