• Korean Chemical Engineering Research
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• 제48권3호
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• pp.355-358
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• 2010

유도 결합 저온 플라즈마를 사용하여 폴리카보네이트 시료를 처리한 후 표면 특성 변화를 분석하였다. 표면 거칠기는 플라즈마 공정조건에 상관없이 표면 처리 후에 모두 증가하였으나, 산소 분위기에서 플라즈마 처리했을 때 가장 크게 증가하였다. 표면의 화학 결합 분석에서 플라즈마 처리 전 시료의 산소 함량이 산소 플라즈마 처리 후에 43% 증가하여 표면에 친수성 극성기의 형성이 촉진되었다. 공정 변수 중, 처리 시간에 따른 접촉각 변화는 산소 분위기에서 가장 낮은 접촉각 $9.17^{\circ}$을 얻을 수 있었고, 방전 전력의 증가는 같은 처리 시간에서 빠르게 접촉각의 감소를 보여 플라즈마 표면처리 시간을 단축시키는 효과를 주었다. 그러나 방전기체 유량의 증가에 대한 접촉각 변화에 대한 영향성이 크지 않았다.

• 한국전기전자재료학회논문지
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• 제18권4호
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• pp.285-296
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• 2005

Reduced pressure chemical vapor deposition technology has been used to study SiGe heterostructure epitaxy and device issues, including SiGe relaxed buffers, proper control of Ge component and crystalline defects, two dimensional delta doping, and their influence on electrical properties of devices. From experiments, 2D profiles of B and P presented FWHM of 5 nm and 20 nm, respectively, and doses in 5×10/sup 11/ ∼ 3×10/sup 14/ ㎝/sup -2/ range. The results could be employed to fabricate SiGe/Si heterostructure field effect transistors with both Schottky contact and MOS structure for gate electrodes. I-V characteristics of 2D P-doped HFETs revealed normal behavior except the detrimental effect of crystalline defects created at SiGe/Si interfaces due to stress relaxation. On the contrary, sharp B-doping technology resulted in significant improvement in DC performance by 20-30 ％ in transconductance and short channel effect of SiGe HMOS. High peak concentration and mobility in 2D-doped SiGe heterostructures accompanied by remarkable improvements of electrical property illustrate feasible use for nano-sale FETs and integrated circuits for radio frequency wireless communication in particular.

• 한국전기전자재료학회논문지
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• 제13권6호
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• pp.509-513
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• 2000

The physical and electrical characteristics of MgO and Pt thin-films on it deposited by reactive sputtering and rf magnetron sputtering respectively were analyzed with annealing temperature and time by four point probe SEM and XRD. Under annealing conditions of 100$0^{\circ}C$ and 2 hr, MgO thin-film had the properties of improving Pt adhesion to SiO$_2$and insulation without chemical reaction to Pt thin-film and the sheet resistivity and the resistivity of Pt thin-film deposited on it were 0.1288 Ω/ and 12.88 $\mu$$\Omega$.cm respectively. We made Pt resistance pattern on SiO$_2$/Si substrate by life-off method and fabricated Pt thin-film type microheater for thermal microsensors by Pt-wire Pt-paste and SOG(spin-on-glass). In the temperature range of 25~40$0^{\circ}C$ we estimated TCR(temperature coefficient of resistance) and resistance ratio of thin-film type Pt-RTD(resistance thermometer device). We obtained TCR value of 3927 ppm/$^{\circ}C$ close to the bulk Pt value. Resistance values were varied linearly within the range of the measurement temperature. The thermal characteristics of fabricated thin-films type Pt micorheater were analyzed with Pt-RTD integrated on the same substrate. The heating temperature of Pt microheater could be up to 40$0^{\circ}C$ with 1.5 watts of the heating power.

• 한국결정성장학회지
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• 제8권2호
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• pp.286-291
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• 1998

$RuO_2$를 하부 전극으로 적용하여 스퍼터링 가스의 주입비($Ar/O_2$ratio) 변화에 따른 $SrTiO_3$ 박막의 물성을 고찰하였다. 플라스마 가스내 $Ar/O_2$비 변화가 결정성, 표면 morphology등의 $SrTiO_3$ 박막의 미세구조에 큰 영향을 미치는 것을 확인할 수 있었다. 플라스마 가스내의 산소량이 증가함에 따라 박막의 표면 morpholgy 및 상형성의 향상을 통하여 $SrTiO_3$박막의 전기적 특성을 개선할 수 있음을 관찰하였다. 산소의 양이 증가할수록 ST 박막의 누설전류는 $2.0{\times}10^{-6}A/{\textrm}{cm}^2(Ar/O_2=10/0)$에서 $3.8{\times}10^{-7}A/{\textrm}cm^2(Ar/O_2=5/5)$로 감소하였고, 유전 상수값은 $70(Ar/O_2=10/0)$에서 $190(Ar/O_2=5/5)$으로 증가하였다.

• The Korean Journal of Ceramics
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• 제3권4호
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• pp.263-268
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• 1997

RuO$_3$ thin films were deposited on Si(100) substrate at low temperatures by hot-wall metalorganic chemical vapor deposition. Bis(cyclopentadienyl) ruthenium, Ru$(C_5H_5)_2$, was used as the precursor RuO$_2$single phase was obtained at a low deposition temperature of 25$0^{\circ}C$ and the crystallinity of RuO$_2$thin films improved with increasing deposition temperature. RuO$_2$thin films grow perpendicularly to the substrate and show the columnar structure. The grain size of RuO$_2$films drastically increases with increasing the deposition temperature. The resistivity of the 180 nm-thick RuO$_2$thin films deposited at 27$0^{\circ}C$ was 136 $\mu$$\Omega$-cm and increased with decreasing film thickness. SrBi$_2Ta_2O_4$ thin films deposited by rf magnetron sputtering on the RuO$_2$bottom electrodes showed a fatigue-free characteristics up to ~10$^10$ cycles under 5 V bipolar square pulses and the remanent polarization, 2 P$_r$ and the coercive field, 2 E, were 5.2$\mu$C/$\textrm{cm}^2$ and 76.0 kV/cm, respectively, for an applied voltage of 5 V The leakage current density was about 7.0$\times$10$^{-6}$ A/$\textrm{cm}^2$ at 150 kV/cm.

• 한국결정성장학회지
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• 제4권3호
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• pp.325-335
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• 1994

Floating zone법으로 Spinel$(MgO.Al_2O_3)$을 성장시켰다. $MgO.Al_20_3$ spinel의 용융점은 $2135^{\circ}C$ 정도이고, 용융액으로부터 단결정을 성장시키는 방법에 있어서 매우 중용한 사항이다. Verneuil법과 RF-유도가열법을 이용한 czochralski법으로 성장시킨 경우가 보고된 바 있으나, 본 공법으로는 처음이라 사료된다. 본 연구에서는 halogen적외선 lamp를 이용한 image fur-nace에서 용융하여 아래쪽으로 하강함으로 인해 단결정을 육성시키는 floating zone법을 사용하여, $MgAl_2O_4$ spinel 단결정을 성장하였다. 또한 전이금속 이온을 doping하여 용융점의 하강 효과와 함께 적색, 녹색을 띈 단결정을 성장시켰다. 결론으로 성장계면과 용융대의 안전성에 주목하여 spinel 단결정 성장 기구를 규명하려 하였으며 성장계면이 오목함(결정쪽으로)에서 비롯되는 성장시의 양상에 대해 고찰하였다.

• 한국정보디스플레이학회:학술대회논문집
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• 한국정보디스플레이학회 2003년도 International Meeting on Information Display
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• pp.1038-1041
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• 2003

In the paper, we investigated silicon surface microstructures formed by reactive ion etching in hollow cathode system. Wet anisotropic chemical etching technique use to form random pyramidal structure on <100> silicon wafers usually is not effective in texturing of low-cost multicrystalline silicon wafers because of random orientation nature, but High density hollow cathode plasma system illustrates high deposition rate, better film crystal structure, improved etching characteristics. The etched silicon surface is covered by columnar microstructures with diameters form 50 to 100nm and depth of about 500nm. We used $SF_{6}$ and $O_{2}$ gases in HCP dry etch process. This paper demonstrates very high plasma density of $2{\times}10^{12}$ $cm^{-3}$ at a discharge current of 20 mA. Silicon etch rate of 1.3 ${\mu}s/min$. was achieved with $SF_{6}/O_{2}$ plasma conditions of total gas pressure=50 mTorr, gas flow rate=40 sccm, and rf power=200 W. Our experimental results can be used in various display systems such as thin film growth and etching for TFT-LCDs, emitter tip formations for FEDs, and bright plasma discharge for PDP applications. In this paper we directed our study to the silicon etching properties such as high etching rate, large area uniformity, low power with the high density plasma.

• 한국통신학회논문지
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• 제37권8C호
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• pp.637-644
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• 2012

본 논문에서는 새로운 소형 전력 분배기를 제안한다. 기존의 Wilkinson 전력 분배기에서 ${\lambda}/4$ 길이의 분기선로 대신 ${\lambda}/12$ 길이의 CRLH 전송선 0차 공진 대역통과 여파기를 사용하여 전체구조의 물리적 크기를 줄였다. 분기 선로의 위상을 만족하면서 원하는 주파수를 중심으로 대역을 형성하고 전력 분배가 이뤄지는 기능을 가진다. 설계방법의 타당성 확인을 위해 군위성 통신 시스템의 L-대역을 적용예로 선택하여 등가 모델과 3차원 모의실험의 성능과 함께 분산도와 ZOR 전계분포로써 CRLH의 특성이 제시된다. 모의실험 결과는 측정결과와 비교하였으며 제안기법의 소형화 효과가 논의된다.

• 한국전기전자재료학회논문지
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• 제23권5호
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• pp.397-402
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• 2010

In this paper, we studied WVTR(water vapor transmission rate) properties of $Si_3N_4$ thin film that was deposited using TCP-CVD (transformer coupled plasma chemical vapor deposition) method for the possibility of OLED(organic light emitting diode) encapsulation. Considering the conventional OLED processing temperature limit of below $80^{\circ}C$, the $Si_3N_4$ thin films were deposited at room temperature. The $Si_3N_4$ thin films were prepared with the process conditions: $SiH_4$ and $N_2$, as reactive gases; working pressure below 15 mTorr; RF power for TCP below 500 W. Through MOCON test for WVTR, we analyzed water vapor permeation per day. We obtained that WVTR property below 6~0.05 gm/$m^2$/day at process conditions. The best preparation condition for $Si_3N_4$ thin film to get the best WVTR property of 0.05 gm/$m^2$/day were $SiH_4:N_2$ gas flow rate of 10:200 sccm, working pressure of 10 mTorr, working distance of 70 mm, TCP power of 500 W and film thickness of 200 nm. respectively. The proposed results indicates that the $Si_3N_4$ thin film could replace metal or glass as encapsulation for flexible OLED.

• JSTS:Journal of Semiconductor Technology and Science
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• 제15권5호
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• pp.490-496
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• 2015

We have grown AlN/GaN heterostructure which is a promising candidate for mm-wave applications. For the growth of the high quality very thin AlN barrier, indium was introduced as a surfactant at the growth temperature varied from 750 to $1070^{\circ}C$, which results in improving electrical properties of two-dimensional electron gas (2DEG). The heterostructure with barrier thickness of 7 nm grown at of $800^{\circ}C$ exhibited best Hall measurement results; such as sheet resistance of $215{\Omega}/{\Box}$electron mobility of $1430cm^2/V{\cdot}s$, and two-dimensional electron gas (2DEG) density of $2.04{\times}10^{13}/cm^2$. The high electron mobility transistor (HEMT) was fabricated on the grown heterostructure. The device with gate length of $0.2{\mu}m$ exhibited excellent DC and RF performances; such as maximum drain current of 937 mA/mm, maximum transconductance of 269 mS/mm, current gain cut-off frequency of 40 GHz, and maximum oscillation frequency of 80 GHz.