• Title/Summary/Keyword: RF power absorption

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dispersion characteristics and RE power absorption for a mangetized plasma (자화 플라즈마의 분산특성과 유효광학계수 변화)

  • 라상호;정재성;오범환;박세근
    • Journal of the Korean Vacuum Society
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    • v.9 no.3
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    • pp.285-289
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    • 2000
  • It has been well known that weak axial magnetic field on the process plasma enhances plasma density. As the magnetic field helps a specific polarized EM wave mode to penetrate into the plasma, the energy transfer to the plasma enhances and the ion density increases. We have analyzed systematic change of the dispersion relation caused by the cyclotron resonance condition. This resonance occurs at near 5 gauss to provide minimum penetration depth, as known before. RF penetration depth increases abruptly beyond the magnetic field of 5 gauss, and this phenomena lessen as the collision frequency increases.

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Effect of SiO2/ITO Film on Energy Conversion Efficiency of Dye-sensitized Solar Cells

  • Woo, Jong-Su;Jang, Gun-Eik
    • Transactions on Electrical and Electronic Materials
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    • v.16 no.6
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    • pp.303-307
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    • 2015
  • Multilayered films of ITO (In2O3:SnO2 = 9:1)/SiO2 were deposited on soda-lime glass by RF/DC magnetron sputtering at 500℃ to improve the energy conversion efficiency of dye-sensitized solar cells (DSSCs). The light absorption of the dye was improved by decrease in light reflectance from the surface of the DSSCs by using an ITO film. In order to estimate the optical characteristics and compare them with experimental results, a simulation program named EMP (essential macleod program) was used. EMP results revealed that the multilayered thin films showed high transmittance (approximate average transmittance of 79%) by adjusting the SiO2 layer thickness. XRD results revealed that the ITO and TiO2 films exhibited a crystalline phase with (400) and (101) preferred orientations at 2 θ = 26.24° and 35.18°, respectively. The photocurrent-voltage (I-V) characteristics of the DSSCs were measured under AM 1.5 and 100 mW/cm2 (1 sun) by using a solar simulator. The DSSC fabricated on the ITO film with a 0.1-nm-thick SiO2 film showed a Voc of 0.697 V, Jsc of 10.596 mA/cm2 , FF of 66.423, and calculated power conversion efficiency (ηAM1.5) of 5.259%, which was the maximum value observed in this study.

Tetrakis(trimethylsilyloxy)silane와 cyclohexane 혼합 전구체를 사용한 플라즈마중합박막에서의 mouse embryonic fibroblast cell과 bovine aortic endothelial cell의 동향

  • Gwon, Seong-Ryul;Ban, Won-Jin;Nam, Jae-Hyeon;Lee, Ye-Ji;Jeong, Dong-Geun;Seo, Yeong-Sik;Park, Hyeon-Yong
    • Proceedings of the Korean Vacuum Society Conference
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    • 2015.08a
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    • pp.227.2-227.2
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    • 2015
  • 세포를 부착하는 기술은 세포를 배양하기 위한 가장 기초적이며 중요한 기술이다. 세포 부착기술은 대상물과 세포 간의 다양한 생물학적, 물리화학적 연관 관계가 있으나 세포와 부착 대상물 간의 복잡한 상호작용 때문에 완벽히 예측하기는 어렵다. 우리는 이 연구에서 siloxane 성분을 포함하고 있는 전구체인 tetrakis(trimethylsilyloxy)silane과 hydro-carbon을 포함하고 있는 전구체인 cyclohexane을 혼합하여 플라즈마 중합 박막을 만들고 그 박막에서의 mouse embryonic fibroblast cells과 bovine aortic endothelial cell 부착의 정도를 확인하였다. 플라즈마 중합 박막을 제작하기 위해 capacitively coupled plasma chemical vapor deposition system을 사용하였고 carrier gas로는 Ar을 사용하였다. Plasma RF power는 13.56MHz 70W를 사용하였다. Bubbler에서 기화된 전구체를 포함하고 있는 Ar carrier gas가 process chamber에서 혼합되고 두 전구체의 비율을 조절하기 위해 carrier gas를 0 에서 150sccm으로 변화시켜 플라즈마 중합 박막을 제작하였다. 플라즈마 중합 박막의 화학적 조성은 Fourier transform infrared absorption spectroscopy와 X-ray photoelectron spectroscopy를 이용하여 측정하였고, 생물학적 세포 부착 정도는 현미경을 통해 관찰하였다. 또한, 물과 박막의 접촉각(Water contact angle)을 측정함으로써 본 박막과 세포 부착에서의 친, 소수성의 연관성을 확인하였다. Tetrakis(trimethylsilyloxy)silane를 전구체를 사용한 박막에서 세포 부착 억제 표면특성이 관찰되었고, 주입되는 cyclohexane 비율이 늘어날수록 세포부착 가능한 표면 특성을 보였다. 결과적으로, 전구체인 tetrakis(trimethylsilyloxy)silane와 cyclohexane의 비율을 조절함으로써 세포의 부착정도를 제어할 수 있음을 확인하였다.

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Fabrication of Multiple-Frequency Exposure System for In Vitro Experiment (세포 실험용 다중 주파수 동시 노출 장치 제작)

  • Kim, Tae-Hong;Seo, Min-Gyeong;Mun, Ji-Yeon;Pack, Jeong-Ki
    • The Journal of Korean Institute of Electromagnetic Engineering and Science
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    • v.23 no.2
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    • pp.213-219
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    • 2012
  • Recently, we are simultaneously exposed by various electromagnetic sources due to an increase of mobile communication services. However, EMF(Electric, Magnetic and Electromagnetic Field) study has been performed mainly about only single frequency. The objective of this paper is to develop an multiple-frequency exposure system for in vitro experiment. The exposure unit for in vitro experiments was designed by radial transmission line type to get broadband characteristics to generate signals of CDMA at 836.5 MHz and WCDMA at 1950 MHz frequency simultaneously. The modulated signals were delivered to the conical antenna through amplifier, digital attenuator and RF combiner. SAR values were obtained by the averaged values of 3 measured values at 9 points in petri dish using the fiber optic temperature probe. The measured return loss was under -15 dB. For 1 W input power, the mean value and standard deviation of SAR were $0.105{\pm}0.019$ for the CDMA frequency and $0.262{\pm}0.055$ for the WCDMA frequency.

Enhanced Properties of Epoxy Molding Compound by Plasma Polymerization Coating of Silica (실리카의 플라즈마 중합 코팅에 의한 에폭시 봉지재의 물성 향상 연구)

  • Roh, J.H.;Lee, J.H.;Yoon, T.H.
    • Journal of Adhesion and Interface
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    • v.2 no.2
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    • pp.1-10
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    • 2001
  • Silica for Epoxy Molding Compound (EMC) was coated via plasma-polymerization with RF plasma (13.56 MHz) as a function of treatment time, power and pressure. 1,3-diaminopropane, allylamine, pyrrole, 1,2-epoxy-5-hexene, allylmercaptan or allylalcohol were utilized for plasma polymerization coating and adhesion of coated silica was evaluated by measuring flexural strength. CTE and water absorption of EMC were also measured, and fracture surface of flexural specimen was analyzed by SEM in order to elucidate the failure mode. The plasma polymer coated silica was analyzed by FT-IR and reactivity of plasma polymer coating with epoxy resin was evaluated with DSC in order to investigate the adhesion mechanism. The EMC prepared from the silica coated with 1,3-diaminopropane or allylamine exhibited high flexural strength, low CTE, and low water absorption compared with the control sample, and also exhibited 100% cohesive failure mode. These results can be attributed to the chemical reaction between the functional groups in the plasma polymer coating and epoxy resin, and also consistent with the results from FT-IR and DSC analysis.

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Characteristics of SiO2/Si Quantum Dots Super Lattice Structure Prepared by Magnetron Co-Sputtering Method (마그네트론 코스퍼터링법으로 형성한 SiO2/Si 양자점 초격자 구조의 특성)

  • Park, Young-Bin;Kim, Shin-Ho;Ha, Rin;Lee, Hyun-Ju;Lee, Jung-Chul;Bae, Jong-Seong;Kim, Yang-Do
    • Korean Journal of Materials Research
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    • v.20 no.11
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    • pp.586-591
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    • 2010
  • Solar cells have been more intensely studied as part of the effort to find alternatives to fossil fuels as power sources. The progression of the first two generations of solar cells has seen a sacrifice of higher efficiency for more economic use of materials. The use of a single junction makes both these types of cells lose power in two major ways: by the non-absorption of incident light of energy below the band gap; and by the dissipation by heat loss of light energy in excess of the band gap. Therefore, multi junction solar cells have been proposed as a solution to this problem. However, the $1^{st}$ and $2^{nd}$ generation solar cells have efficiency limits because a photon makes just one electron-hole pair. Fabrication of all-silicon tandem cells using an Si quantum dot superlattice structure (QD SLS) is one possible suggestion. In this study, an $SiO_x$ matrix system was investigated and analyzed for potential use as an all-silicon multi-junction solar cell. Si quantum dots with a super lattice structure (Si QD SLS) were prepared by alternating deposition of Si rich oxide (SRO; $SiO_x$ (x = 0.8, 1.12)) and $SiO_2$ layers using RF magnetron co-sputtering and subsequent annealing at temperatures between 800 and $1,100^{\circ}C$ under nitrogen ambient. Annealing temperatures and times affected the formation of Si QDs in the SRO film. Fourier transform infrared spectroscopy (FTIR) spectra and x-ray photoelectron spectroscopy (XPS) revealed that nanocrystalline Si QDs started to precipitate after annealing at $1,100^{\circ}C$ for one hour. Transmission electron microscopy (TEM) images clearly showed SRO/$SiO_2$ SLS and Si QDs formation in each 4, 6, and 8 nm SRO layer after annealing at $1,100^{\circ}C$ for two hours. The systematic investigation of precipitation behavior of Si QDs in $SiO_2$ matrices is presented.