• 한국재료학회지
• /
• 제19권5호
• /
• pp.259-264
• /
• 2009

In this study we investigated the effect of the multi-step texturing process on the electrical and optical properties of hydrogenated Al-doped zinc oxide (HAZO) thin films deposited by rf magnetron sputtering. AZO films on glass were prepared by changing the $H_2/(Ar+H_2)$ ratio at a low temperature of $150^{\circ}C$. The prepared HAZO films showed lower resistivity and higher carrier concentration and mobility than those of non-hydrogenated AZO films. After deposition, the surface of the HAZO films was multi-step textured in diluted HCl (0.5%) for the investigation of the change in the optical properties and the surface morphology due to etching. As a result, the HAZO film fabricated under the type III condition showed excellent optical properties with a haze value of 52.3%.

• 전기화학회지
• /
• 제20권2호
• /
• pp.41-48
• /
• 2017

폴리올레핀 분리막의 내열성을 향상시키면서도 전기화학특성 개선을 위해 RF Magnetron Sputter기반으로 수십 나노미터 수준의 세라믹 층이 코팅된 내열 분리막을 제조하였다. 분리막 원단의 열적 손상없이 코팅 시간을 최소화하기 위한 증착 조건을 최적화 하였고, 이를 기반으로 제조된 내열 분리막의 물리적, 전기화학적 평가를 진행하였다. 약 20 nm의 $Al_2O_3$가 코팅된 Polypropylene(PP) 분리막은 원단 분리막 대비 통기 특성 (원단: 211.3 sec/100 mL, 코팅 분리막: 250.8 sec/100 mL)은 떨어졌으나, 열 수축율 (원단: 19.4%, 코팅 분리막: 0.0% @ $140^{\circ}C$ & 30 min), 전해액 Uptake(원단: 176%, 코팅 분리막: 190%) 및 이온전도도 (원단: 0.700 mS/cm, 코팅 분리막: 0.877 mS/cm)는 모두 향상되었다. 그 결과, 2032-type Half-cell($LiMn_2O_4/Li$)을 이용한 전기화학적 평가에서도, 향상된 율별 특성과 유사한 수명 특성을 나타내었다.

• 한국세라믹학회지
• /
• 제43권1호
• /
• pp.38-41
• /
• 2006

Surface of PC (Polycarbonate) and PES (Polyethersulphone) treated by plasma modification with rf power from 50 W to 200 W substrates in Ar (3 sccm), $O_2$ (12 sccm) atmosphere. From the results of modified substrates in XPS (X-ray Photoelectron Spectroscopy), the ratio of oxide containing bond increased with rf power. As the rf power was 200 W, the contact angle was the lowest value of 14.09 degree. And the datum from AFM (Atomic Force Microscopy), rms roughness value of PES and PC substrates increased with rf power. We could deposit $Ta_2O_5$ with good adhesion on plasma treated PES and PC substrates using by in-situ rf magnetron sputter.

• 마이크로전자및패키징학회지
• /
• 제18권1호
• /
• pp.49-53
• /
• 2011

Diamond-like carbon (DLC)은 $Sp^3$ 결합분율이 높은 준안정 상태의 비정질 탄소물질로 이루어진 박막이다. DLC는 기계적 특성, 화학적 특성, 윤활 특성뿐만 아니라 광학적, 전기적 특성 또한 우수한 물질이다. 본 연구에서는 DLC 박막을 그라파이트(graphite) 타깃을 출발 물질로 하여 고주파 마그네트론 스퍼터(RF magnetron sputter)로 $SiO_2$ 기판 상에 증착하였다. 증착된 DLC 박막은 후 열처리를 하였으며 열처리 온도에 따른 DLC 박막의 특성 변화를 관찰하였다. 열처리는 진공에서 급속가열법(rapid thermal process)으로 $300{\sim}500^{\circ}C$ 범위에서 시행하였다. 열처리된 DLC 박막은 전기적 특성 평가를 위하여 Hall 계수 측정기를 이용하여 상온 비저항을 측정하였으며 표면 변화를 확인하기 위하여 원자력 현미경(atomic force microscopy)을 이용하여 표면형상 변화를 관찰 하였다. 또한 표면특성, 비저항 특성 변화와 구조적 특성 변화와의 관계를 확인하기 위하여 X-선 광전자 분광법(X-ray photoelectron spectroscopy)과 라만 분광법을 이용하여 열처리에 따른 DLC 박막의 구조 변화를 관찰하였다.

• 센서학회지
• /
• 제4권3호
• /
• pp.71-79
• /
• 1995

응답특성이 빠르고, 좁은 영역에서의 측정에 있어 매우 유리한 고 분해능의 광섬유 Fabry -Perot 간섭형 센서를 제조하기 위해 반사막으로 사용될 $TiO_{2}$ 박막의 형성법에 대해 조사하였다. RF magnetron sputtering 법을 이용하여 증착된 $TiO_{2}$ 박막은 굴절률이 $2.36{\sim}2.48$정도, 그리고 O/Ti의 원소조성비는 거의 2에 가까운 화학양론적인 조성비가 되어 e-beam 증착법으로 증착된 박막보다 우수한 특성을 나타내었다. 또한 용융 접합법을 사용하여 광섬유 선로내에 $TiO_{2}$ 반사막을 형성할 경우 RF 전력이 120W인 조건에서 증착된 반사막이 가장 큰 반사율을 나타내었을 뿐만 아니라 우수한 반사율 조절특성을 보였다. 광섬유 선로내에 이러한 조건에서 증착된 $TiO_{2}$ 반사막을 가지는 진성 광섬유 Fabry-Perot 간섭계는 매우 안정된 간섭특성을 나타내어 이를 여러가지 센서에 응용할 경우 고정도의 우수한 감지 특성을 나타낼 수 있을 것으로 기대된다.

• 전기학회논문지
• /
• 제59권3호
• /
• pp.588-593
• /
• 2010

Sputter deposition on a Pt counter electrode was studied using radio frequency (RF) plasma as the improvement of incident photon to current conversion efficiency (IPCE) for dye-sensitized solar cells (DSCs). Effects of the sputtering thickness and the incident angle on a Pt counter electrode for DSCs were investigated. Experiments to get the optimal sputtering time for the performance of the DSCs were carried out. And it is found that the optimized sputtering time was 120 seconds, in addition, the incident angles of the substrate was adjusted from $0^{\circ}$ to $60^{\circ}$. The maximum efficiency of 5.37% was obtained at the incident angle of $40^{\circ}$ with an active cell area of $1cm^2$.

• 한국신재생에너지학회:학술대회논문집
• /
• 한국신재생에너지학회 2006년도 춘계학술대회
• /
• pp.154-157
• /
• 2006

The counter electrode widely used in DSCs (Dye-sensitized Solar Cells) is constructed of conducting glass substrates coated with Pt films, where the platium acts as a catalyst. Pt counter electrodes in DSCs are one important component. It is expected that characteristics of Pt electrodes strongly depend on fabrication process and its surface condition. In this study, Pt counter electrode surface of DSC is deposited by reactive RF magnetron sputtering under the conditions of Ar 5mtorr, RF power of 120w and substrate temperature of $100^{\circ}C$. Surface morphology of Pt electrodes was investigated by FE-SEM and AFM. And this paper shows our recent results and technology to fabricate the new designed cell with Pt electrodes deposited by sputtering method. We have achieved fill factor 65% and photoelectric conversion efficiency around 2.6% as the best results of new designed DSCs structure.

• Progress in Superconductivity
• /
• 제5권2호
• /
• pp.105-108
• /
• 2004

We have studied effects of in-situ annealing on the fabrication of superconducting MgB$_2$ thin films prepared by rf magnetron co-sputtering. The Films were deposited on A1$_2$O$_3$ (1102) substrates at room temperature by using Mg and B targets. To trap remnant $O_2$ gas in the chamber, we used 20 mtorr Af sputter-gas balanced with 5 mol % of H$_2$ gas. To enhance adhesion to the substrate a thin layer of B was deposited prior to the codeposition of Mg and B. After completion of the film deposition, an additional Mg layer was deposited on top to compensate for Mg loss during the subsequent in-situ annealing. We have investigated the effects of two most important annealing parameters that are the Mg-to-B composition ratio and the annealing temperature. The range of the Mg-to-B composition ratio was from 0.42 to 0.85, and that of the annealing temperature was 500 $^{\circ}C$∼750 $^{\circ}C$. The Best result was obtained for the composition ratio of about 10% Mg excess from the stoichiometry and the annealing temperature of 700 $^{\circ}C$. Based on these results, we obtained films with T$_{c}$ : 36.5 K by further refining the fabrication process.s.

• 한국재료학회지
• /
• 제21권6호
• /
• pp.341-346
• /
• 2011

In this study, we inserted a Zn buffer layer into a AZO/p-type a-si:H layer interface in order to lower the contact resistance of the interface. For the Zn layer, the deposition was conducted at 5 nm, 7 nm and 10 nm using the rf-magnetron sputtering method. The results were compared to that of the AZO film to discuss the possibility of the Zn layer being used as a transparent conductive oxide thin film for application in the silicon heterojunction solar cell. We used the rf-magnetron sputtering method to fabricate Al 2 wt.% of Al-doped ZnO (AZO) film as a transparent conductive oxide (TCO). We analyzed the electro-optical properties of the ZnO as well as the interface properties of the AZO/p-type a-Si:H layer. After inserting a buffer layer into the AZO/p-type a-Si:H layers to enhance the interface properties, we measured the contact resistance of the layers using a CTLM (circular transmission line model) pattern, the depth profile of the layers using AES (auger electron spectroscopy), and the changes in the properties of the AZO thin film through heat treatment. We investigated the effects of the interface properties of the AZO/p-type a-Si:H layer on the characteristics of silicon heterojunction solar cells and the way to improve the interface properties. When depositing AZO thin film on a-Si layer, oxygen atoms are diffused from the AZO thin film towards the a-Si layer. Thus, the characteristics of the solar cells deteriorate due to the created oxide film. While a diffusion of Zn occurs toward the a-Si in the case of AZO used as TCO, the diffusion of In occurs toward a-Si in the case of ITO used as TCO.

• 전기화학회지
• /
• 제3권3호
• /
• pp.178-181
• /
• 2000

본 실험에서는 리튬 이차 박막전지의 음극물질로 주석 산화물 박막을 RF magnetron sputter을 이용하여 증착하였다. RF power와 공정 압력을 각각 $2.5W/cm^2$와 10mTorr로 고정시키고 박막 중의 산소량을 조절하기 위해 산소 분압을 $0\~100\%$까지 조절하여 실험하였으며, 산소량을 더 줄이기 위해 주석 금속 칩을 사용하여 조절하였다. 산소량을 줄여 줌으로써 비가역적으로 형성되는 리튬산화물의 량을 줄이고 고용량의 $SnO_x$음극 박막을 제조하였다. 그 중 $SnO_{1.43}$일 때 가장 큰 가역용량(약$ 500{\mu}Ah/cm^2{\mu}m$) 얻었다.