• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2003.07b
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• pp.1176-1179
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• 2003

Low-Pressure inductively coupled RF discharge sources have important industrial applications mainly because they can provide a high-density electrodeless plasma source with low ion energy and low power loss. In an inductive discharge, the RF power is coupled to the plasma by an electromagnetic interaction with the current flowing in a coil. In this paper, the experiments have been focussed on the electric characteristic and carried out using a single Langmuir probe. The internal electric characteristics of inductively coupled Ar RF discharge at 13.56 [MHz] have been measured over a wide range of power at gas pressure ranging from $1{\sim}70$ [mTorr].

• Journal of the Korean institute of surface engineering
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• v.29 no.5
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• pp.519-524
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• 1996

We synthesized semiconducting Sn-doped diamondlike carbon films by rf plasma-enhanced chemical vapor deposition using an organotin compound as a dopung gas source. XPS quan-titative analysis for the deposited films after 60 s argon ion etching revealed that Sn concen-tration increased with the partial pressure of the organotin compound in the reactant gas. In C 1s spectra, there was a component due to C-Su bond which had a negative chemical shift. C 1s spectra also indicated that the deposited films were relatively $sp^2$ rich. The chemical shift of the Sn-C bond in Sn $3d_{5/2}$ spectra was about +1.7 eV. The electrical resistivity and the optical transmittance were also investigated.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.145.1-145.1
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• 2014

변형된 end-Hall type의 이온 소스를 사용하여 이온 소스의 형태에 따라 달라지는 이온 빔의 변화를 측정하였다. 이온 소스 cathode의 wehnelt mask를 세 가지 종류로 제작하였으며, 생성된 이온 빔을 이용하여 Al이 sputter 방식으로 증착된 유리 기판을 etching 하였다. 실험 결과 wehnelt mask의 모양에 따라 focus, broad, strate의 형태로 이온 빔이 생성되는 것을 확인하였다. Al이 증착된 유리 기판의 제작을 위하여 Al target을 사용하여 RF power로 150 W, 2분간 sputtering을 하였고, 이온 소스와 기판사이의 거리를 1 cm씩 증가시켜가며 이온 빔을 2,500 V로 3분간 유리 기판을 etching한 후, 유리 기판이 etching된 모양을 통해 이온 빔의 형태를 분석하였다. 본 연구를 위하여 sputtering과 이온 빔 처리가 가능한 챔버를 제작하였으며, scroll pump와 turbo molecular pump를 사용하였다. Base pressure $1.5{\times}10^{-6}Torr$에서 실험이 진행되었고, 불활성 기체 Ar을 사용하였다. Ar 기체를 주입시 pressure는 $2.6{\times}10^{-3}Torr$였다.

• Biomolecules & Therapeutics
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• v.27 no.3
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• pp.265-275
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• 2019

Technological advances of mankind, through the development of electrical and communication technologies, have resulted in the exposure to artificial electromagnetic fields (EMF). Technological growth is expected to continue; as such, the amount of EMF exposure will continue to increase steadily. In particular, the use-time of smart phones, that have become a necessity for modern people, is steadily increasing. Social concerns and interest in the impact on the cranial nervous system are increased when considering the area where the mobile phone is used. However, before discussing possible effects of radiofrequency-electromagnetic field (RF-EMF) on the human body, several factors must be investigated about the influence of EMFs at the level of research using in vitro or animal models. Scientific studies on the mechanism of biological effects are also required. It has been found that RF-EMF can induce changes in central nervous system nerve cells, including neuronal cell apoptosis, changes in the function of the nerve myelin and ion channels; furthermore, RF-EMF act as a stress source in living creatures. The possible biological effects of RF-EMF exposure have not yet been proven, and there are insufficient data on biological hazards to provide a clear answer to possible health risks. Therefore, it is necessary to study the biological response to RF-EMF in consideration of the comprehensive exposure with regard to the use of various devices by individuals. In this review, we summarize the possible biological effects of RF-EMF exposure.

• 한국정보디스플레이학회:학술대회논문집
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• 2004.08a
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• pp.927-930
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• 2004

We report on a new type of a flat and thin display with a secondary emission electron source. In this display device electrons are multiplied between two secondary emission plates under a high frequency electric field. This principle has a few important advantages over a field emission display: the emission comes from flat plates, which reduces the life-time problems of ion bombardment of field emitter tips. Furthermore, the electron emission is space charge limited which gives a uniform electron distribution. The electrons are extracted from the source and accelerated to a phosphor screen to generate light. Gray levels are made by pulse width modulation.

• Journal of the Korean Vacuum Society
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• v.11 no.1
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• pp.8-15
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• 2002

Tetrahedral amorphous carbon(ta-C) films were deposited by the filtered vacuum arc(FVA) process. The FVA process has many advantages such as high ionization ratio and the ion energy, which is suitable for dense amorphous carbon film deposition. However, the energy of the carbon ion cannot be readily controlled by manipulating the arc source parameters. In order to control the film properties in wide range, we investigated the dependence of the film properties on the substrate bias voltage. The mechanical properties and the density of the film exhibit the maximum values at about -100 V of the bias voltage. The maximum values of hardness and density were respectively 54$\pm$3 GPa and 3.6$\pm$0.4 g/㎤, which are 3 to 5 times higher than those of the films deposited by RF PACVD or ion beam process. The details of the atomic bond structure were analysed by Raman and NEXAFS spectroscopy. The change in the film properties for various bias voltages could be understood in the view of the $sp^2$ and $sp^3$ bond fraction in the deposited films.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.472-472
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• 2011

The capacitive coupled plasma (CCP) has been extensively used in the semiconductor industry because it has not only good uniformity, but also low electron temperature. But CCP source has some problems, such as difficulty in varying the ion bombardment energy separately, low plasma density, and high processing pressure, etc. In this reason, dual frequency CCP has been investigated with a separate substrate biasing to control the plasma parameters and to obtain high etch rate with high etch selectivity. Especially, in this study, we studied on the etching of $SiO_2$ by using the pulse-time modulation in the dual-frequency CCP source composed of 60 MHz/ 2 MHz rf power. By using the combination of high /low rf powers, the differences in the gas dissociation, plasma density, and etch characteristics were investigated. Also, as the size of the semiconductor device is decreased to nano-scale, the etching of contact hole which has nano-scale higher aspect ratio is required. For the nano-scale contact hole etching by using continuous plasma, several etch problems such as bowing, sidewall taper, twist, mask faceting, erosion, distortions etc. occurs. To resolve these problems, etching in low process pressure, more sidewall passivation by using fluorocarbon-based plasma with high carbon ratio, low temperature processing, charge effect breaking, power modulation are needed. Therefore, in this study, to resolve these problems, we used the pulse-time modulated dual-frequency CCP system. Pulse plasma is generated by periodical turning the RF power On and Off state. We measured the etch rate, etch selectivity and etch profile by using a step profilometer and SEM. Also the X-ray photoelectron spectroscopic analysis on the surfaces etched by different duty ratio conditions correlate with the results above.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.74-74
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• 2009

The ArF PR mask was. developed to overcome the limit. of sub 40nm patterning technology with KrF PR. But ArF PR difficult to meet the required PR selectivity by thin PR thickness. So need to the multi-stack mask such as amorphous carbon layer (ACL). Generally capacitively coupled plasma (CCP) etcher difficult to make the high density plasma and inductively coupled plasma (ICP) type etcher is more suitable for multi stack mask etching. Hybrid Coupled Plasma source (HCPs) etcher using the 13.56MHz RF power for ICP source and 2MHz and 27.12MHz for bias power was adopted to improve the process capability and controllability of ion density and energy independently. In the study, the oxide trench which has the multi stack layer process was investigated with the HCPs etcher (iGeminus-600 model DMS Corporation). The results were analyzed by scanning electron microscope (SEM) and it was found that etching characteristic of oxide trench profile depend on the multi-stack mask.

• Proceedings of the KIEE Conference
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• 2005.11a
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• pp.93-95
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• 2005

VASIMR (Variable Specific Impulse Magnetoplasma Rocket: JSC, NASA)의 개념을 바탕으로 하는 K2H (KBSI-KAIST-Hanyang University)라고 이름 붙여진 우주 추진체 모사장치 (Space Propulsion Simulator)를 개발하였다. 이 장치는 헬리콘 플라즈마 소스, 이온 가열부 (ICRH: Ion Cyclotron Resonance Heating), 자기노즐 부분으로 이루어져 있다. 헬리콘 플라즈마 소스는 m=+1 형태의 Right-helical 안테나를 사용하여 발생하였다. 본 연구에서는 K2H 장치의 기본적인 설계 개념 및 초기에 발생한 헬리콘 플라즈마의 물성을 RF 보상탐침을 이용하여 측정하였다. 그 결과 900 W, 13.56 MHz rf파워를 사용하여, 아르곤 7 mTorr하에서 전자밀도 = $10^{12}-10^{13}cm-3$, 전자온도 = 4-6 eV의 헬리콘 플라즈마를 안정적으로 발생시켰다.

• Journal of the Korean institute of surface engineering
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• v.30 no.4
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• pp.255-261
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• 1997

Thin film batteries can be used as a micro power source for electronic in which minute power is needed. In this study, lithium phosphorous oxynitride(LIPON) thin films were deposited as an eletrolyte for lithium ion batteries using RF magentron sputtering of lithium phosphate in N2. Ti was also added into the LIPON films as a second network former to enhance the ioinc conductivity of the films. The optimum conditions for LIPON film deposition were sought and the electrolyte with the conductivity of $2.5 \times 10^{-6}$S/cm was obtained at the condition of RF power 4.4 W/$\textrm{cm}^2$, process pressure 10 mtorr and pure nitrogen ambience. Furthermore, the conductivity of LIPON films was increased from $2.5 \times 10^{-6}$S/cm to $8.6 \times 10^{-6}$S/cm by the doping of 2.4at.% Ti. It was also found that by adding Ti to LIPON films, Li content was increased and nitrogen content that reported having the cross-linking effect on LIPON films was also increased as confirmed XPS.