• 제어로봇시스템학회:학술대회논문집
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• 1996.10a
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• pp.255-258
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• 1996

This paper describes a DC voltage controller for the DC power supply which is constructed using the full-bridged MOS-FET DC-to-RF power inverter and rectifier. The full-bridged MOS-FET DC-to-RF inverter consisting of four MOSFET arrays and an output power transformer has a control function which is able to control the RF output power when the widths of the pulse voltages which are fed to four MOS-FET arrays of the fall-bridged inverter are changed using the pulse width control circuit. The power conversion efficiency of the full-bridged MOS-FET DC-to-RF power inverter was approximately 85 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The RF output voltage from the full-bridged MOS-FET DC-to-RF inverter is fed to the rectifier circuit through the output transformer. The rectifier circuit consists of GaAs schottky diodes and filters, each of which is made of a coil and capacitors. The power conversion efficiency of the rectifier circuit was over 80 % when the duty cycles of the pulse voltages were changed from 30 % to 50 %. The output voltage of the rectifier circuit was changed from 34.7V to 37.6 V when the duty cycles of the pulse voltages were changed from 30 % to 50 %.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.29 no.7
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• pp.500-507
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• 2018

A three-channel radio frequency (RF) monopulse receiver using a data signal with a maximum transmission rate of 274 Mbps was designed. A monopulse receiver using a broadband communication signal was designed to operate in the Ku band, and it consists of a down-conversion module and a signal-processing module. To satisfy the performance of the proposed RF monopulse receiver, a signal-processing function less than the reception sensitivity for each transmission rate according to the adaptive transmission rate is required. To minimize signal reception and mutual frequency interference of various bandwidths, two RF filters were applied. To verify the satisfaction of system requirements, an AWR Corp. simulation tool was used.

• Proceedings of the Korean Magnestics Society Conference
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• 2005.12a
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• pp.60-61
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• 2005

• Progress in Superconductivity
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• v.4 no.2
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• pp.132-136
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• 2003

Extremely selective high temperature superconducting (HTS) band -pass filters were developed for the base transceiver station applications of Digital Cellular communication Service (DCS). The filters have a bandwidth of 25 MHz at a center frequency of 834 MHz. There are 12 resonators which have spiral-meander microstrip-line structures in order to reduce far-field radiations with a reasonable tunability. As a result, the size of filters is 5 mm $\times$ 17 mm $\times$ 41 mm. Device characteristics exhibited a low insertion loss of -0.4 dB with a -0.2 dB ripple and a return loss better than -10 dB in the pass-band at 65 K. The out-of-band signals were attenuated better than 60 dB about 3.5 MHz from the lower band edge, and 3.8 MHz from the higher band edge.

• ETRI Journal
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• v.37 no.6
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• pp.1077-1086
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• 2015

This paper presents a general-purpose design scheme of a filter bank (FB)-based radio frequency (RF) transceiver that operates across the entire ultra-high frequency (UHF) TV band from 470 MHz to 698 MHz and complies with the TV white space (TVWS) regulatory requirements. To this end, an intermediate frequency (IF) band-pass filter (BPF) with a sharp skirt characteristic is considered as a solution for handling the incoming signals from a baseband modem. Specifically, an FB-based BPF structure with four ceramic resonator filters that effectively rejects unwanted signals is proposed to extract a desired signal in the TV band. Achievable data rates of a cognitive radio system (CRS) employing the proposed FB-based RF transceiver at the application layer are investigated in both wired and wireless environments. The service coverage of the CRS network is measured according to several modulation and coding schemes (MCSs) of the CRS. The results show that the coverage of a wireless network in a nearly open area can be extended by more than 9.3 km in the TVWS. Experimental results also confirm that the proposed FB-based RF transceiver is adequate for utilization in TVWS applications.

• Journal of Advanced Marine Engineering and Technology
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• v.37 no.1
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• pp.99-104
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• 2013

In this paper, we developed a fully integrated downconverter MMIC (monolithic microwave integrated circuit) including Lange coupler and output active balun for millimeter wave applications. Concretely, ${\lambda}$/4 transmission line was added to Lange coupler for size reduction of RF/LO input, and mixed RF/LO signals were applied to gate of the FET of mixer. Active balun was used at output port for a coupling of out-of-phase IF output signals. According to measured results, the proposed downconverter MMIC showed good RF performances. For example, the downconverter MMIC showed an LO leakage power of -25 dBc at IF output port, and a RF-LO isolation of 18 dB. Therefore, off-chip components such as LO rejection filters were not required for a normal operation of the proposed downconverter MMIC. The proposed downconverter MMIC showed a conversion gain of 10.3 dB at RF frequency of 63 GHz. The size of the downconverter MMIC including all active and passive components was $2.2{\times}1.4mm^2$.

• ETRI Journal
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• v.26 no.3
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• pp.229-240
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• 2004

This paper reports on our development of a dual-mode transceiver for a CMOS high-rate Bluetooth system-onchip solution. The transceiver includes most of the radio building blocks such as an active complex filter, a Gaussian frequency shift keying (GFSK) demodulator, a variable gain amplifier (VGA), a dc offset cancellation circuit, a quadrature local oscillator (LO) generator, and an RF front-end. It is designed for both the normal-rate Bluetooth with an instantaneous bit rate of 1 Mb/s and the high-rate Bluetooth of up to 12 Mb/s. The receiver employs a dualconversion combined with a baseband dual-path architecture for resolving many problems such as flicker noise, dc offset, and power consumption of the dual-mode system. The transceiver requires none of the external image-rejection and intermediate frequency (IF) channel filters by using an LO of 1.6 GHz and the fifth order onchip filters. The chip is fabricated on a $6.5-mm^{2}$ die using a standard $0.25-{\mu}m$ CMOS technology. Experimental results show an in-band image-rejection ratio of 40 dB, an IIP3 of -5 dBm, and a sensitivity of -77 dBm for the Bluetooth mode when the losses from the external components are compensated. It consumes 42 mA in receive ${\pi}/4-diffrential$ quadrature phase-shift keying $({\pi}/4-DQPSK)$ mode of 8 Mb/s, 35 mA in receive GFSK mode of 1 Mb/s, and 32 mA in transmit mode from a 2.5-V supply. These results indicate that the architecture and circuits are adaptable to the implementation of a low-cost, multi-mode, high-speed wireless personal area network.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.13 no.8
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• pp.748-753
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• 2002

In this paper, a new topology of a active capacitor is proposed in order to apply the resonator in the design of RF active bandpass filters. Through the noise analysis of the active capacitor, the optimized low noise design process is also presented, Due to the low noise performance of the proposed active bandpass filter, it can be used in the RF front-end of the receivers. In designed 2-stage active bandpass filter at 1.9 GHz shows insertion loss of 0 dB, noise figure of 2.6 dB, and OIP3 of 8 dBm.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.26 no.2
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• pp.213-217
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• 2015

Microwave Photonic(MWP) filters capable of use a bandpass filter or a notch filter with large bandwidth have been proposed. 4-lines${\times}$2-bit fiber-optic delay lines with a unit time-delay difference of 50 ps were experimentally realized. By changing the time-delay difference and the coefficients of microwave-modulated optical signals, the bandpass and notch filters were implemented and characterized.

• Proceedings of the IEEK Conference
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• 2001.06a
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• pp.245-248
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• 2001

In this paper, we have investigated the design technique and fabricated the surface acoustic wave (SAW) filter for duplexer, which consists of Tx. and Rx. filter, and antenna terminal. For Tx. and Rx. bandpass filters we used the one-port SAW resonators with n-section ladder structure. The structure is composed of couples of series-arm resonators and parallel-arm resonators. RF filter using ladder structure was designed and fabricated on 36$^{\circ}$Y-X LiTaO$_3$ substrates. Designed filters, insertion loss is less than 1.5dB, the bandwidth is more than 25MHz, rejection band level is less than -30dB and center frequency is 820MHz.