• Journal of Digital Convergence
• /
• v.12 no.11
• /
• pp.373-378
• /
• 2014

The technology of direction finding is very important to make high position fixing accuracy. TDOA(time difference of arrival) direction finding technology is a high accuracy technology and is used in RF system from 1990. The principle of TDOA is to receive an emitter signal with two antennas, measure the time difference of received signal and then convert the time differences to azimuth angle. For high DF(direction finding) accuracy long basis line and high SNR at receiving system are needed. The DF accuracy and position fixing accuracy are simulated with different SNRs and antenna base lines. We obtain the DF accuracy of $0.51^{\circ}$ at $0^{\circ}$ incident azimuth angle in case of 50m base line and 40dB SNR.

• Journal of the Institute of Electronics and Information Engineers
• /
• v.53 no.1
• /
• pp.29-35
• /
• 2016

We have demonstrated a $Ti:LiNbO_3$ electro-optic electric-field sensors utilizing a $1{\times}2$ Y-fed balanced-bridge Mach-Zehnder interferometric (YBB-MZI) modulator which uses a 3-dB directional coupler at the output and dipole patch antenna. The operation and design were proved by the BPM simulation. A dc switching voltage of ~16.6 V and an extinction ratio of ~14.7 dB are observed at a wavelength of $1.3{\mu}m$. For a 20 dBm rf power, the minimum detectable electric-fields are ~1.12 V/m and ~3.3 V/m corresponding to a dynamic range of about ~22 dB and ~18 dB at frequencies 10 MHz and 50 MHz, respectively. The sensors exhibit almost linear response for the applied electric-field intensity from 0.29 V/m to 29.8 V/m.

• Journal of the Korea Institute of Military Science and Technology
• /
• v.23 no.4
• /
• pp.407-416
• /
• 2020

Recent complex battle field demands Network Centric Warfare(NCW) ability to control various parts into a cohesive unit. In path planning filed, the NCW ability increases complexity of path planning algorithm, and it has to consider a communication coverage map as well as traditional parameters such as minimum radar exposure and survivability. In this paper, pros and cons of various propagation models are summarized, and we suggest a coverage map generation method using a Longley-Rice propagation model. Previous coverage map based on line of sight has significant discontinuities that limits selection of path planning algorithms such as Dijkstra and fast marching only. If there is method to remove discontinuities in the coverage map, optimization based path planning algorithms such as trajectory optimization and Particle Swarm Optimization(PSO) can also be used. In this paper, the Longley-Rice propagation model is used to calculate continuous RF strengths, and convert the strength data using smoothed leaky BER for the coverage map. In addition, we also suggest other types of rough coverage map generation using a lookup table method with simple inputs such as terrain type and antenna heights only. The implemented communication coverage map can be used various path planning algorithms, especially in the optimization based algorithms.

• Journal of the Korean institute of surface engineering
• /
• v.29 no.5
• /
• pp.345-349
• /
• 1996

The wetting property of polymer surfaces is very important for practical applications. Plasma source ion implantation technique was used to improve the wetting properties of polymer surfaces. Poly(ethylene terephtalate) and other polymer sheets were mounted on the target stage and an RF plasma was generated by means of an antenna located inside the vacuum chamber. High voltage pulses of up to -10kV, 10 $\mu$sec, and up to 1 kHz were applied to the stage. The samples were implanted for 5 minutes with using Ar, $N_2,O_2,CH_4,CF_4$ and their mixture as source gases. A contact angle meter was used to measure the water contact angles of the implanted samples and of the samples stored in ambient conditions after implantation. The modified surfaces were analysed with Time-Of-Flight Mass Spectrometer (TOF-SIMS) and Auger Electron Spectroscopy (AES). The oxygen-implanted samples showed extremely low water contact angles of $3^{\circ}C$ compared to $79^{\circ}C$ of unimplanted ones. Furthermore, the modified surfaces were relatively stable with respect to aging in ambient conditions, which is one of the major concerns of the other surface treatment techniques. From TOF-SIMS analysis it was found that oxygen-containing functional groups had been formed on the implanted surfaces. On the other hand, the $CF_4$-implanted samples turned out to be more hydro-phobic than unimplanted ones, giving water contact angles exceeding $100^{\circ}C$ . The experiment showed that plasma source ion implantation is a very promising technique for polymer surface modification especially for large area treatment.

• The Journal of the Institute of Internet, Broadcasting and Communication
• /
• v.19 no.3
• /
• pp.149-155
• /
• 2019

In this paper, phase shifter has been designed and manufactured to apply to passive phase array seeker for Ka-band and its performance was confirmed. It was designed as a key element for conducting electric beam steering by adjusting the phase of the array element. Insertion loss of less than 1.5dB and phase accuracy of less than $10^{\circ}$(RMS) in operation bandwidth of 1GHz were checked. The performance identified by the actual fabrication was further analyzed by applying the beam pattern analysis based on the array synthesis theory. The effect of the final performamnce of the proven phase shifter on the performance and pointing error and angular accuracy of the passive phase array antenna beam pattern was analyzed. Then, the validation of the proposed phase shifter has been made.

• Journal of the Korea Institute of Information and Communication Engineering
• /
• v.24 no.4
• /
• pp.508-514
• /
• 2020

To implement the continuously evolving mobile communication standards such as Long Term Evolution (LTE) and 5G, the Software Defined Radio (SDR) concept provides great flexibility and efficiency. For many years, a high-end Digital Signal Processor (DSP) System on Chip (SoC) has been developed to support multicore and various hardware coprocessors. This paper introduces the implementation of the SDR platform hardware using TI's TCI663x chip. Using the platform, LTE transport channel is implemented by interworking multicore DSP with Bit rate Coprocessor (BCP) and Turbo Decoder Coprocessor (TCP) and the performance is evaluated according to various implementation options. In order to evaluate the performance of the implemented LTE transport channel, LTE base station system was constructed by combining FPGA main board for physical channels, SDR platform board, and RF & Antenna board.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.37C no.9
• /
• pp.811-820
• /
• 2012

GNSS signal is vulnerable to jamming signal because of well-known signal structure and weak signal power. For these reasons, the need for analysis of jamming effects and anti-jamming techniques of is increasing. In this paper, a GNSS signal generator is designed which includes a radio wave propagation model for six kind of tactical environments and a body masking model for the reception environment of a vehicle. The radio wave propagation model for downtown, rural, forest, coastline, waste land and snow or ice area is designed using two-ray model. The body masking model is designed the effect which the antenna is affected by the reception environment of a vehicle and radiation pattern from a user configuration. The performance of generated signals from the GNSS signal generator considering reception environment of a vehicle is evaluated by a commercial GPS L1 receiver(NordNav) in normal and jamming environment. Also, the generated GNSS signal is compared to a commercial GPS L1 H/W based RF signal generator(STR4500). The results show that the designed GNSS signal generator in a normal environment compared to the same navigation performance. In jamming environment, it is shown that the body masking effect and GNSS signal acquisition and tracking loss in compliance with the jamming signal are precisely working in the reception environment of a vehicle.

• The Journal of Korean Institute of Communications and Information Sciences
• /
• v.30 no.10A
• /
• pp.922-929
• /
• 2005

This paper proposes an adaptive pilot beacon equipment for mobile communication systems based on direct spread spectrum technology which generates the pilot channel for handoff between base stations by using the information acquired from the downstream wireless signal regarding the overhead channel information. Such an adaptive pilot beacon equipment will enable low power operation since among the wireless signals, only the pilot channel will be generated and transmitted. The pilot channel in the downstream link of the CDMA receiver is used to acquire time and frequency synchronization and this is used to calibrate the offset for the beacon, which implies that time synchronization using GPS is not required and any location where forward receive signal can be received can be used as the installation site. The downstream link pilot signal searching within the CDMA receiver is performed by FPGA and DSP. The FPGA is used to perform the initial synchronization for the pilot searcher and DSP is used to perform the offset correction between beacon clock and base station clock. The CDMA transmitter the adaptive pilot beacon equipment will use the timing offset information in the pilot channel acquired from the CDMA receiver and generate the downstream link pilot signal synchronized to the base station. The intermediate frequency signal is passed through the FIR filter and subsequently upconverted and amplified before being radiated through the antenna.

• Proceedings of the Korean Vacuum Society Conference
• /
• 1998.02a
• /
• pp.77-77
• /
• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Journal of the Institute of Electronics Engineers of Korea SD
• /
• v.44 no.7 s.361
• /
• pp.9-15
• /
• 2007

In this paper, we present the design of Schottky diodes and voltage multiplier for UHF-band passive RFID applications. The Schottky diodes were fabricated using Titanium (Ti/Al/Ta/Al)-Silicon (n-type) junction in $0.35\;{\mu}m$ CMOS process. The Schottky diode having $4{\times}10{\times}10\;{\mu}m^{2}$ contact area showed a turn-on voltage of about 150 mV for the forward diode current of $20\;{\mu}A$. The breakdown voltage is about -9 V, which provides sufficient peak inverse voltage necessary for the voltage multiplier in the RFID tag chip. The effect of the size of Schottky diode on the turn-on voltage and the input impedance at 900 MHz was investigated using small-signal equivalent model. Also, the effect or qualify factor of the diode on the input voltage to the tag chip is examined, which indicates that high qualify factor Schottky diode is desirable to minimize loss. The fabricated voltage multiplier resulted in a output voltage of more than 1.3 V for the input RF signal of 200mV, which is suitable for long-range RFID applications.