• Proceedings of the KIEE Conference
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• 1994.11a
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• pp.228-230
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• 1994

A Spotter ion Plating(SIP) system with a r. f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The discharge voltage-discharge characteristics curves of a FTS source could be characterized by the fern of $I{\propto}V^n$ with n in the range of $8{\sim}12$. The energy of ions incident on the substrate depended on the sheath potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of $30{\sim}50N$, and markedly influenced by substrate bias voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.226-226
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• 2013

GaN는 III-V족 물질로 밴드갭이 3.4 eV으로 가시광선 영역에서 투명하며 우수한 전기적 특성으로 인해 여러 반도체 분야에서 응용되고 있는 물질이다. GaN 박막의 성장 방법으로는 molecular beam epitaxial 방법과 metal organic chemical vapor deposition 방법이 있지만 고비용인 단점이 있다. 이에 비해 sputtering 방법으로 성장시킨 GaN 박막은 비용이 적게 들고 저온에서 성장이 가능하다는 장점이 있다. 이 연구에서는 radio frequency sputter를 사용하여 GaN 박막을 성장하여 구조적, 광학적 특성을 분석하였다. GaN 박막은 각각 단일층의 그래핀과 c-축 사파이어 기판에 증착 하였으며, 이때 기판온도는 $25^{\circ}C$, $100^{\circ}C$, $200^{\circ}C$로 변화를 주었고, N2 분압은 2 sccm, 5 sccm, 10 sccm으로 변화를 주었다. 그래핀과 사파이어 기판에 성장된 각각의 GaN 박막의 결정성을 투과전자현미경 이미지로 측정하여 비교하였다. $4{\times}10^{-3}$ Torr 진공도와 50 W의 방전 전력과 Ar 10 sccm 분위기에서 20 min 동안 증착된 GaN 박막 두께는 70 nm정도를 가지는 것으로 확인하였다. X-ray Diffraction 측정으로 사파이어 기판 및 (002) 방향으로 성장된 GaN의 피크를 확인하였다. 추가적으로 Photoluminescence 스펙트럼은 N2 분압의 변화와 yellow luminescence 영향을 받는 것을 확인하였다. 본 연구를 통하여, 증착된 기판온도와 N2 분압의 변화에 따른 그래핀 및 사파이어 기판에 증착된 GaN 박막의 특성을 비교하였으며, sputtering 방법으로 고품질의 GaN 박막을 성장시킬 수 있는 가능성을 확인하였다.

• Proceedings of the KIEE Conference
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• 1995.07c
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• pp.1245-1247
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• 1995

In this paper, Analyzed structual property using SEM and XRD. The longer distance between substrate and target enhance crystalographic orientation of (110)plane, but inhibit growth of (002)plane. Also, deposited ZnO thin film on electrode layer inhibit crystalographic orientation of (002)plane, expecially Al electrode inhibit stronger than Pt layer. And using fabricated transducer, analyzed eletric and frequency characteristics.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2009.11a
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• pp.106-106
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• 2009

Al-doped ZnO (AZO) thin films were grown on glass substrates by co-sputtering at room temperature. We made ZnO and Al target and ZnO:Al film is deposited with sputter which has two RF gun source. The Al content was controlled by varying Al RF power and effect of Al contents on the properties of ZnO:Al film was investigated. Crystallinity and orientation of the ZnO:Al films were investigated by X-ray diffraction (XRD), surface morphology of the ZnO:Al films was observed by atomic force microscope. Electrical properties of the ZnO:Al films were measured at room temperature by van der Pauw method and hall measurement. Optrical properties of ZnO:Al films were measured by UV-vis-NIR spectrometer.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2002.07a
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• pp.160-163
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• 2002

Silica waveguide for an integrated diffractive optical head system was designed and fabricated. The waveguide was designed to optimize the optical efficiency of red and/or blue laser source, and a lab-made RF magnetron sputter was adopted to deposit silica cladding and core layers on SiO$_2$/Si substrates. The cladding and core layers were formed using commercial targets, and the former was done with ＃7740 and the latter with BK7 and BAK4, respectively The surface roughness of the waveguide layers was measured to be 30.3${\AA}$ for BK7 and 17.8${\AA}$ for BAK4, and the difference of refractive indices between core and cladding layers was 0.9% and 2.5%, respectively. The waveguide fabricated with the core layer of BK7 showed better optical properties when the final diffractive optical probe heads were measured with red laser(650nm) source.

• Proceedings of the KIEE Conference
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• 1995.11a
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• pp.472-474
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• 1995

A Sputter ion Plating(SIP) system with a r.f. coil electrode and the Facing Target Sputter(FTS) source was designed for high-quality thin film formation. The rf discharge was combined with DC facing target sputtering in order to enhance ionization degree of a sputtered atoms. The energy of ions incident on the substrate depended on the health potential of DC biased substrate. The mean impact ion energy increased with negative bias voltage and rf power. The adhesive force of the TiN film formed was in the range of 30$\sim$50N, and markedly influenced by substrate bias voltage.

• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.355.2-355.2
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• 2014

Zirconium nitride (ZrN)는 높은 열적, 화학적 특성과 우수한 기계적 강도, 낮은 전기 저항성 때문에 절삭공구, 의료용품 등으로 널리 사용된다. 특히 물리증착법 (PVD)으로 증착 할 경우 실제 hardness보다 높은 특성을 가지고 내마모성과 고온에서 hardness가 우수한 것으로 알려져 있다. 본 실험에서는 물리증착법 중 하나인 rf magnetron sputter를 사용하여 질소 유량에 따른 zirconium nitride 박막을 증착하였다. 그 후, $600^{\circ}C$, N2 분위기에서 후열처리를 진행하였고, 후열처리에 따른 박막의 nano-electrotribology 특성 변화를 관찰하기 위해 nano-indenter를 사용하였다. 측정결과, 질소 유량이 0, 0.5, 5 sccm으로 변함에 따라 증착된 박막의 hardness는 18.62, 15.64, 13.58 GPa로 각각 감소되었으며, elastic moduls도 210.43, 185.15, 171.52 GPa로 감소하였다. 이는 증착 과정에서 과포화된 N2 가 후열처리 과정에서 빠져 나오는 것으로 알 수 있다.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1999.05a
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• pp.597-600
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• 1999

A solar cell conversion efficiency was degraded by grain boundary effect in polycrystalline silicon To reduce grain boundary effect, we performed a preferential grain boundary etching, POC$_3$ n-type emitter doping, and then ITO film growth on poly- Si. Among the various preferential etchants, Schimmel etch solution exhibited the best result having grain boundary etch depth higher than 10 ${\mu}{\textrm}{m}$. RF magnetron sputter grown ITO films showed a low resistivity of 10$^{-4}$ $\Omega$ -cm and high transmittance of 85 %. With well fabricated poly-Si solar cells, we were able to achieve as high as 15 % conversion efficiency at the input power of 20 mW/$\textrm{cm}^2$.

• Proceedings of the KIEE Conference
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• 2006.07c
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• pp.1414-1415
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• 2006

Air-gap type film bulk acoustic wave resonator device using ZnO for piezoelectric layer and sacrifice layer, deposited by RF magnetron sputter with various conditions, fabricated in this study. Also, membrane$(SiO_2)$ and top and bottom electrode(both Al) of piezoelectric layer deposited by RF magnetron sputter. Using micro electro mechanical systems(MEMS) technique, sacrifice layer removed and then air-gap formed. The results of each process checked by XRD, AFM, SEM to obtain good quality device.

• Journal of Sensor Science and Technology
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• v.24 no.5
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• pp.348-352
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• 2015

Thin nickel oxide films formed on uncooled and cooled $SiO_2/Si$ substrates using a radio frequency (RF) magnetron sputter powered by 200 W in a mixed atmosphere of argon and oxygen. Grazing-incidence X-ray diffraction and field emission scanning electron microscopy are used for the structural analysis of nickel oxide films. The electrical conductivity required for better bolometric performance is estimated by means of a four-point probe system. Columnar and (200) preferred orientations are discovered in both films regardless of substrate cooling. Electric resistivity, however, is greatly influenced by the substrate cooling. Oxygen partial pressure increase during the nickel oxide deposition leads to a rapid decrease in resistivity, and the resistivity is higher in the cooled nickel oxide samples. Even when small microstructure variations are applied, lower resistivity in favor of low noise performance is acquired in the uncooled samples.