• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2003년도 춘계학술대회 논문집 유기절연재료 방전 플라즈마연구회
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• pp.92-95
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• 2003

In this paper, the emission properties of electrodeless fluorescent lamp were discussed using the inductively coupled plasma. To transmit the electromagnetic energy into the chamber, a RF power of 13.56MHz was applied to the antenna and considering the Ar gas pressure and the RF electric power change, the emission spectrum, Ar-I line, luminance were investigated. At this time the input parameter for ICP RF plasma, Ar gas pressure and RF power were applied in the range of 10~60m Torr, 10~300W respectively.

• 반도체디스플레이기술학회지
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• 제14권4호
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• pp.84-87
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• 2015

We have designed and fabricated two different RF-DC Converters called doubler for 5.8GHz Microwave Wireless Power Transmission. The doubler as RF-DC Converter makes the rectified voltage be doubled. We measured and compared voltages of the doublers with those of the previous full-wave rectifying RF-DC Converter. The doublers show rectified double voltages. However, the full-wave rectifying converter has a high efficiency due to the suppression of reflecting harmonics. The other fabricated doublers causes so many harmonics that they can't convert the low-power RF to the full DC. In this paper, we show that the different doublers doesn't double the rectifying voltages compared with those of the full-wave rectifying converter and give a reason about that.

• 한국마이크로전자및패키징학회:학술대회논문집
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• 한국마이크로전자및패키징학회 2001년도 추계 기술심포지움
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• pp.171-177
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• 2001

The adhesion enhancement from inserting a RF bias-sputtered Cr layer between Cu and polyimide (PI) has been studied. The RF bias power applied in this study was ranged from 0 to 400 W. Without the RF bias, the peel strength, which measures the adhesion strength, was nearly o g/mm. As the RF power was increased, the peel strength rose up to ~130 g/mm at 200 W, which remained constant with further increase of the RF bias power. Cross-sectional transmission electron microscopy(TEM) was used to investigate the interfacial reaction between the Cr film and PI substrate during the bias sputtering. The Cr/PI interface without the application of RF dais showed a clean, sharp interface while the RF raised Cr/PI interface had about 10~30 nm thick atomistically mixed interlayer between the metal film and PI substrate. This interlayer appeared to have resulted from the implantation of high energy adatoms during the RF bias sputtering of Cr film. This mixed layer serves as an interlocking layer, which enhances adhesion between the metal and PI layers.

• Journal of Semiconductor Engineering
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• 제1권1호
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• pp.13-30
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• 2020

Radio frequency (RF) energy harvesting technology have become a reliable and promising alternative to extend the lifetime of power-constrained wireless networks by eliminating the need for batteries. This emerging technology enables the low-power wireless devices to be self-sustaining and eco-friendly by scavenging RF energy from ambient environment or dedicated energy sources. These attributes make RF energy harvesting technology feasible and attractive to an extended range of applications. However, despite being the most reliable energy harvesting technology, there are several challenges (especially power conversion efficiency, output DC voltage and sensitivity) poised for the implementation of RF energy harvesting systems. In this article, a detailed literature on RF energy harvesting technology has been surveyed to provide guidance for RF energy harvesters design. Since signal strength of the received RF power is limited and weak, high efficiency state-of-the-art RF energy harvesters are required to design for providing sufficient DC supply voltage to wireless networks. Therefore, various designs and their trade-offs with comprehensive analysis for RF energy harvesters have been discussed. This paper can serve as a good reference for the researchers to catch new research topics in the field of RF energy harvesting.

• IEIE Transactions on Smart Processing and Computing
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• 제3권4호
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• pp.221-225
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• 2014

Low power RF devices, such as RFID and Zigbee, are important for ubiquitous sensing. These devices, however, are powered by portable energy sources, such as batteries, which limits their use. To mitigate this problem, this study developed RF energy harvesting with W-CDMA for a low power RF device. Diodes are required with a low turn on voltage because the diode threshold is larger than the received peak voltage of the rectifying antenna (rectenna). Therefore, a Schottky diode HSMS-286 was used. A prototype of RF energy harvesting device showed the maximum gain of 5.8dBi for the W-CDMA signal. The 16 patch antennas were manufactured with a 10 dielectric constant PTFT board. In low power RF devices, the transmitter requires a step-up voltage of 2.5~5V with up to 35 mA. To meet this requirement, the Texas Instruments TPS61220 was used as a low input voltage step-up converter. From the evaluated result, the achievable incident power of the rectenna at 926mV to operate Zigbee can be obtained within a distance of 12m.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2010년도 제39회 하계학술대회 초록집
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• pp.203-203
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• 2010

Nano-crystalline Si thin films were deposited on polymer and glass by inductively coupled plasma (ICP) - assisted RF magnetron sputtering at low temperature in an argon and hydrogen atmosphere. Internal ICP coil was installed to increase hydrogen atoms dissociated by the induced magnetic field near the inlet of the working gases. The microstructure of deposited films was investigated with XRD, Raman spectroscopy and TEM. The crystalline volume fraction of the deposited films on polymer was about 70% at magnetron RF power of 600W and ICP RF power of 500W. Crystalline volume fraction was decreased slightly with increasing magnetron RF power due to thermal damage by ion bombardment. The diffraction peak consists of two peaks at $28.18^{\circ}$ and $47.10^{\circ}\;2{\theta}$ at magnetron RF power of 600W and ICP RF power of 500W, which correspond to the (111), (220) planes of crystalline Si, respectively. As magnetron power increase, (220) peak disappeared and a dominant diffraction plane was (111). In case of deposited films on glass, the diffraction peak consists of three peaks, which correspond to the (111), (220) and (311). As the substrate temperature increase, dominant diffraction plane was (220) and the thickness of incubation (amorphous) layer was decreased.

• 한국정보통신학회논문지
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• 제16권4호
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• pp.821-828
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• 2012

파장분할다중화-무선광통신(WDM-RoF) 시스템에서 광결정 광섬유를 이용하여 채널 간 고주파신호들의 전력변화의 편차를 분석하여 이들을 조절할 수 있음을 확인하였다. WDM-RoF 시스템의 경우, 원격노드에서의 고주파 신호 특성은 파장 의존성을 갖는 단일모드 광섬유의 분산 특성으로 인해 전송거리 증가에 대한 고주파신호 수신 전력 변화가 채널의 파장에 따른 편차를 나타내게 되며, 이는 전체 시스템 설계시 전송거리에 대한 제한 요소로 작용할 수 있다. 광결정 광섬유의 분산보상 특성을 이용하여 WDM 채널에 따른 고주파 전송특성을 개선할 수 있는 광결정 광섬유를 설계하고, 이를 통해 채널간 고주파 전송특성의 편차를 분석하였다.

• 대한전자공학회논문지TC
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• 제41권8호
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• pp.79-85
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• 2004

본 논문에서는 고속 데이터 무선인식에 적용 될 2.45㎓ 수동형 RF-ID 시스템을 개발하였다. RF-ID 시스템은 수동형 태그 와 리더로 구성되어 있다. RF-ID 수동형 태그는 제로 바이어스 쇼트키 다이오드를 사용한 정류기, ID 칩, ASK 변조회로 그리고 backscatter 슬롯 안테나로 구성되어있다. 또한, ASK 변조를 위한 스위칭 소자로서 바이폴라 트랜지스터를 이용하여 저전력 소모 변조회로를 구성하였으며 태그의 슬롯 안테나는 일반 패치 안테나보다 광대역 특성을 갖는다. RF-ID 리더는 circulator를 사용하여 단일 마이크로스트립 패치 어레이 안테나를 사용하였으며 종래의 방식에서 채택하는 double-balanced mixer구조를 사용하지 않고 single-balanced mixer구조를 채택함으로서 회로의 복잡성을 개선하고 전체적인 단말기 크기를 소형화 가능하도록 설계하였다. 측정결과 동작주파수는 2.4 GHz이고 출력은 27 dBm (500 mW)에서 감지거리 1 m로 나타났다. 리더에서 측정된 변조신호는 -46.76 dBm이며 주파수는 57.2 kHz이다.

• 한국전기전자재료학회논문지
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• 제17권2호
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• pp.162-170
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• 2004

A 900MHz CMOS RF power amplifier with digitally controllable output power has been proposed and designed with 0.6${\mu}{\textrm}{m}$ standard CMOS technology. The designed power amplifier was composed of digitally controllable switch mode pre-amplifiers with an integrated 4nH spiral inductor load and class-C output stage. Especially, to compensate the 1ow Q of integrated spiral inductor, cascode amplifier with a Q-enhancement circuit is used. It has been shown that the proposed power control technique allows the output power to change from almost 3dBm to 13.5dBm. And it has a maximum PAE(Power Added Efficiency) of almost 55％ at 900MHz operating frequency and 3V power supply voltage.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2011년도 제42회 하계학술대회
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• pp.1648-1649
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• 2011

본 논문에서는 무선 전력 전송을 위한 10W RF Power Source를 설계 및 제작, 측정 하였다. 제작된 RF Power Source는 9~11MHz의 신호 생성을 위한 DDS와 전력 증폭을 위한 전력 증폭기로 구성되어 있다. 근거리 무선 전력 전송은 전자기 유도 또는 전자기 공진 형태의 무선으로 전력을 전달하게 되므로 전력 증폭기의 부하단의 임피던스가 변하게 되어 전력 증폭기의 특성의 변화가 생기는 단점을 가지고 있다. 이러한 단점을 극복하기 위해 본 논문에서는 부하단의 임피던스 변화에 둔감하도록 평형(Balanced)구조를 이용하여 전력 증폭기를 설계하였다. 제작된 RF Power Source는 입력 전원 DC 24V, 소모 전류 1.5A, 사용가능 주파수범위는 9~11MHz, 최대 출력 전력 10W의 특성을 보였다.