• Journal of the Korean institute of surface engineering
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• v.29 no.6
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• pp.739-744
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• 1996

Lanthanide diphthalocyanines have interesting properties on electrochemical and chemical redox reactions. It is however, difficult to use because of thier short device life. Plasma-polymerization attends to improvement thier device life. Yb-diphthalocyanine ($YbPc_2$) polymer film was deposited in a parallel plate electrodes-type RF plasma reactor. $YbPc_2$ was sublimed into the argon plasma, and polymer film was obtained on a substrate. Radio frequency was constant of 13.56MHz. Pressure of argon gas, sublimation rate of $YbPc_2$ and RF power were variable parameters depending on film quality. Surface of polymer films include a lot of sub-micron order lumps. It was indicated that size of lumps depends on polymerization degree controled by parameters. Size of lumps and polymerization degree are increased with RF power. However, by the high RF power over 40W, polymerization degree is decreased with RF power and surface of film is rough. In condition of RF power is high, polymerization will compete with etching of film. We obtained good films for electrochromic display with RF power of 20W, argon gas pressure of 8.0 Pa and sublimationrate of $1.2 \times 10$ mol/min, and good films for gas sensor with RF power of 30W, argon gas pressure of 10.6Pa and sublimation rate of $1.2 \times 10$ mol/min.

• Journal of IKEEE
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• v.12 no.1
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• pp.27-33
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• 2008

The demand of wireless communication is increased rapidly due to the development of wireless communication systems, and many people have the great interest about the "RF system". The trend of the RF audio system is to design the system with less power consumption. In this paper, we explain the Software Algorithm Design of RF systems that is suitable for low power consumption.

• ETRI Journal
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• v.25 no.3
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• pp.195-202
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• 2003

This paper proposes a new LDMOSFET structure with a trenched sinker for high-power RF amplifiers. Using a low-temperature, deep-trench technology, we succeeded in drastically shrinking the sinker area to one-third the size of the conventional diffusion-type structure. The RF performance of the proposed device with a channel width of 5 mm showed a small signal gain of 16.5 dB and a maximum peak power of 32 dBm with a power-added efficiency of 25% at 2 GHz. Furthermore, the trench sinker, which was applied to the guard ring to suppress coupling between inductors, showed an excellent blocking performance below -40 dB at a frequency of up to 20 GHz. These results confirm that the proposed trenched sinker should be an effective technology both as a compact sinker for RF power devices and as a guard ring against coupling.

• Journal of Industrial Technology
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• v.29 no.B
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• pp.145-149
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• 2009

A RF-DC converter is one of the most important components for a wireless power transmission. It has been developed for many applications such as space solar power system, and Radio Frequency Identification(RFID). In this paper, we designed three types of RF-DC converter and compare the performance of each. All types RF-DC convertoer have a maximum conversion efficiency at input power level of 0 dBm~5 dBm and RF-DC converter of third type was the best performance that has a 21.9% of conversion efficiency.

• Journal of the Semiconductor & Display Technology
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• v.20 no.2
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• pp.29-33
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• 2021

A 5.8-GHz 1W wireless power transmission system was used for charging a smart phone. The voltage of one RF power receiver with antenna was not enough for charging. Several power receivers for charging a smart phone was connected serially. The voltage of several RF power receivers are highly enough for charging a smart phone within 50cm. However, the lack of current from small capacitances of RF-DC converters is not suitable for charging smart phone. It means very long charging time. In this paper, the voltage multiplier circuits for RF-DC converters were analyzed to increase the current and voltage at the same time to reduce the charging time in smartphone RF wireless charging. Through the analysis of multiplier circuits, the 7-stage parallel multiplier circuit with voltage-doubler units are suitable for charging the smartphone, which supplies 5V and 700mA at 3V@5.8GHz.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.41 no.11
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• pp.1574-1579
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• 2016

This paper presents a self-powered sensor-node scheme using a RF wireless power harvesting techniques for improve drone time of flight. Sensor-node that is proposed is turned when two conditions satisfy: The one is input RF ID data from master-node should be same with sensor-node's ID, and the other one is RF wireless power harvesting system is turned on by hysteresis switch. In this paper, master-node's output is 26 dBm at 263 MHz. Maximum RF to DC power conversion efficiency is about 55% at 4-6 dBm input power condition (2 meter from master-node). The maximum RF wireless power harvesting range is about 13 meter form master-node. And power consumption of the sensor-node's load elements such as transmitter, MCU and temperature sensors is approximately average 15 mA at 5.0 V for 10 msec.

• 제어로봇시스템학회:학술대회논문집
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• 1991.10b
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• pp.1920-1923
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• 1991

An online RF power measurement is needed for the full-bridged MOS-FET RF power inverter because the output current and/or voltage waveform is other than sinusoidal. In order to satisfy the requirement, the online measurement of the output power of this type of RF power inverter by the use of the PC-98 personal computer has been presented. The current and voltage waveforms are sensed by the digital oscilloscope probes so as to obtain the instantaeous power and they are entered into the PC98 personal computer so as to average the instantaneous powers. The RF power of up to 1 kw at 1 MHz measured for the power inverter at the output transformer. This method was confirmed to be applied to evaluate the load resistance change with temperature.

• Journal of the Semiconductor & Display Technology
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• v.12 no.1
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• pp.41-45
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• 2013

IGZO transparent conductive thin films were widely used as transparent electrode of optoelectronic devices. We have studied the optical and electrical properties of IGZO thin films. The IGZO thin films were deposited on the corning 1737 glass by RF magnetron sputtering method. The RF power in sputtering process was varied as 25, 50, 75and 100 W, respectively. All of the thin films transmittance in the visible range was above 85%. XRD analysis showed that amorphous structure of the thin films without any peak. The thin films were electrically characterized by high mobility above $13.4cm^2/V{\cdot}s$, $7.0{\times}10^{19}cm^{-3}$ high carrier concentration and $6{\times}10^{-3}{\Omega}-cm$ low resistivity. By the studies we found that IGZO transparent thin film can be used as transparent electrodes in electronic devices.

• Proceedings of the KIEE Conference
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• 2004.07c
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• pp.1915-1917
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• 2004

Inductively coupled plasma is commonly used for electrodeless lamp due to its ease of plasma generation. Optical characteristics significantly depend on the RF power and gas pressure of the plasma. This paper describes the measurement of luminance as a function of RF power and gas pressure with a goal of finding optimal operating conditions of the electrodeless lamp. The gas pressure was varied from 10 [mTorr] to 500 [mTorr] and the RF power was varied from 10 [W] to 200 [W]. It was found that the luminance tends to be decreased when argon pressure is increased, and the luminance is increased as RF power is increased. It was also found that the luminance per unit RF power is high when the argon pressure is low and when the RF power is in the range of 30 [W]${\sim}$40 [W].

• Korean Journal of Materials Research
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• v.22 no.10
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• pp.508-512
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• 2012

ZnO thin films were grown on a sapphire substrate by RF magnetron sputtering. The characteristics of the thin films were investigated by ellipsometry, X-ray diffraction (XRD), atomic force microscopy (AFM), photoluminescence (PL), and Hall effect. The substrate temperature and growth time were kept constant at $200^{\circ}C$ at 30 minutes, respectively. The RF power was varied within the range of 200 to 500 W. ZnO thin films on sapphire substrate were grown with a preferred C-axis orientation along the (0002) plan; X-ray diffraction peak shifted to low angles and PL emission peak was red-shifted with increasing RF power. In addition, the electrical characteristics of the carrier density and mobility decreased and the resistivity increased. In the electrical and optical properties of ZnO thin films under variation of RF power, the crystallinity improved and the roughness increased with increasing RF power due to decreased oxygen vacancies and the presence of excess zinc above the optimal range of RF power. Consequently, the crystallinity of the ZnO thin films grown on sapphire substrate was improved with RF sputtering power; however, excess Zn resulted because of the structural, electrical, and optical properties of the ZnO thin films. Thus, excess RF power will act as a factor that degrades the device characteristics.