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The surface kinetic properties between $BCl_3/Cl_2$/Ar plasma and $Al_2O_3$ thin film

  • Yang, Xue;Kim, Dong-Pyo;Um, Doo-Seung;Kim, Chang-Il
    • Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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    • 2008.06a
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    • pp.169-169
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    • 2008
  • To keep pace with scaling trends of CMOS technologies, high-k metal oxides are to be introduced. Due to their high permittivity, high-k materials can achieve the required capacitance with stacks of higher physical thickness to reduce the leakage current through the scaled gate oxide, which make it become much more promising materials to instead of $SiO_2$. As further studying on high-k, an understanding of the relation between the etch characteristics of high-k dielectric materials and plasma properties is required for the low damaged removal process to match standard processing procedure. There are some reports on the dry etching of different high-k materials in ICP and ECR plasma with various plasma parameters, such as different gas combinations ($Cl_2$, $Cl_2/BCl_3$, $Cl_2$/Ar, $SF_6$/Ar, and $CH_4/H_2$/Ar etc). Understanding of the complex behavior of particles at surfaces requires detailed knowledge of both macroscopic and microscopic processes that take place; also certain processes depend critically on temperature and gas pressure. The choice of $BCl_3$ as the chemically active gas results from the fact that it is widely used for the etching o the materials covered by the native oxides due to the effective extraction of oxygen in the form of $BCl_xO_y$ compounds. In this study, the surface reactions and the etch rate of $Al_2O_3$ films in $BCl_3/Cl_2$/Ar plasma were investigated in an inductively coupled plasma(ICP) reactor in terms of the gas mixing ratio, RF power, DC bias and chamber pressure. The variations of relative volume densities for the particles were measured with optical emission spectroscopy (OES). The surface imagination was measured by AFM and SEM. The chemical states of film was investigated using X-ray photoelectron spectroscopy (XPS), which confirmed the existence of nonvolatile etch byproducts.

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Nonlinearity Compensation of Electroabsorption Modulator by using Semiconductor Optical Amplifier (반도체 광증폭기를 이용한 전계흡수 광변조기 비선형성 보상)

  • Lee, Chang-Hyeon;Son, Seong-Il;Han, Sang-Guk
    • Journal of the Institute of Electronics Engineers of Korea SD
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    • v.37 no.5
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    • pp.23-30
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    • 2000
  • To compensate the nonlinearity of electroabsorption modulator(EAM) resulting from its near exponential transfer function, a semiconductor optical amplifier(SOA) that has a log transfer function is used. Since the transfer function of SOA is inverse to that of EAM, the intermodulation distortion(IMD) of EAM can be reduced by cascading SOA to EAM. Also, the RF gain can be increased by the optical gain of SOA. For these reasons, spurious free dynamic range(SFDR) of EAM is enhanced by connecting SOA to EAM in series and operating in gain salutation region. To improve the nonlinearity compensation of EAM, the increased gain of SOA is required and the slope of gain saturation, the ratio of gain to input SOA power, needs to be steep. However, signal spontaneous beat noise that is the dominant system noise increases in proportion to the gain such that the SFDR of EAM is reduced. The higher the gain of SOA is, the more ASE is increased. Thus the noise level of system is increased and the following SFDR of EAM is decreased. The slope of gain saturation region and ASE of have trade-off relation and the optimization is achieved at 8㏈ optical gain. 9㏈ enhancement of SFDR of EAM is obtained. This scheme is easy to embody the linear EAM and the integration with three components (DFB-LD, EAM and SOA) offers many merits, such as low insertion loss, low chirping and low polarization sensitivity.

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Enhanced Properties of Epoxy Molding Compound by Plasma Polymerization Coating of Silica (실리카의 플라즈마 중합 코팅에 의한 에폭시 봉지재의 물성 향상 연구)

  • Roh, J.H.;Lee, J.H.;Yoon, T.H.
    • Journal of Adhesion and Interface
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    • v.2 no.2
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    • pp.1-10
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    • 2001
  • Silica for Epoxy Molding Compound (EMC) was coated via plasma-polymerization with RF plasma (13.56 MHz) as a function of treatment time, power and pressure. 1,3-diaminopropane, allylamine, pyrrole, 1,2-epoxy-5-hexene, allylmercaptan or allylalcohol were utilized for plasma polymerization coating and adhesion of coated silica was evaluated by measuring flexural strength. CTE and water absorption of EMC were also measured, and fracture surface of flexural specimen was analyzed by SEM in order to elucidate the failure mode. The plasma polymer coated silica was analyzed by FT-IR and reactivity of plasma polymer coating with epoxy resin was evaluated with DSC in order to investigate the adhesion mechanism. The EMC prepared from the silica coated with 1,3-diaminopropane or allylamine exhibited high flexural strength, low CTE, and low water absorption compared with the control sample, and also exhibited 100% cohesive failure mode. These results can be attributed to the chemical reaction between the functional groups in the plasma polymer coating and epoxy resin, and also consistent with the results from FT-IR and DSC analysis.

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Design of pHEMT channel structure for single-pole-double-throw MMIC switches (SPDT 단일고주파집적회로 스위치용 pHEMT 채널구조 설계)

  • Mun Jae Kyoung;Lim Jong Won;Jang Woo Jin;Ji, Hong Gu;Ahn Ho Kyun;Kim Hae Cheon;Park Chong Ook
    • Journal of the Korean Vacuum Society
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    • v.14 no.4
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    • pp.207-214
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    • 2005
  • This paper presents a channel structure for promising high performance pseudomorphic high electron mobility transistor(pHEMT) switching device for design and fabricating of microwave control circuits, such as switches, phase shifters, attenuators, limiters, for application in personal mobile communication systems. Using the designed epitaxial channel layer structure and ETRI's $0.5\mu$m pHEMT switch process, single pole double throw (SPDT) Tx/Rx monolithic microwave integrated circuit (MMIC) switch was fabricated for 2.4 GHz and 5 GHz band wireless local area network (WLAN) systems. The SPDT switch exhibits a low insertion loss of 0.849 dB, high isolation of 32.638 dB, return loss of 11.006 dB, power transfer capability of 25dBm, and 3rd order intercept point of 42dBm at frequency of 5.8GHz and control voltage of 0/-3V These performances are enough for an application to 5 GHz band WLAN systems.

T$a_2O_5$Dielectric Thin Films by Thermal Oxidation and PECVD (열산화법 및 PECVD 법에 의한 T$a_2O_5$ 유전 박막)

  • Mun, Hwan-Seong;Lee, Jae-Seok;Lee, Jae-Seok;Lee, Jae-Seok;Yang, Seung-Gi;Lee, Jae-hak;Park, Hyung-ho;Park, Jong-wan
    • Korean Journal of Materials Research
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    • v.2 no.5
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    • pp.353-359
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    • 1992
  • Thermal oxidation and plasma enhanced chemical vapor deposition of tantalum oxide thin films on p-type (100) Si substrates were studied to examine the dielectric nature of T$a_2O_5$ as a Al/T$a_2O_5$/p-Si capacitor. Microstructure and dielectric properties of the capacitors were investigated by XRD, AES, high frequency C-V analyzer, I-V meter and TEM. XRD analysis showed that the structure of T$a_2O_5$ films were amorphous, but the films were crystallized to hexagonal $\delta$-T$a_2O_5$ by 65$0^{\circ}C$ thermal oxidation treatment. It was found that the stoichiometry of the films was more or less close to 2 : 5. Leakage current density and relative dielectric constant of thermal oxidation T$a_2O_5$ film at 60$0^{\circ}C$ was 5.0${ imes}10^{-6}$/A/c$m^2 and 31.5, respectively. In the case of PECVD T$a_2O_5$film deposited at 0.47W/c$m^2 they were 2.5${ imes}10^{-5}$/A/$ extrm{cm}^2$ and 24.0, respectively. The morphology of the films and interfaces were investigated by TEM.

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Reliable multi-hop communication for structural health monitoring

  • Nagayama, Tomonori;Moinzadeh, Parya;Mechitov, Kirill;Ushita, Mitsushi;Makihata, Noritoshi;Ieiri, Masataka;Agha, Gul;Spencer, Billie F. Jr.;Fujino, Yozo;Seo, Ju-Won
    • Smart Structures and Systems
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    • v.6 no.5_6
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    • pp.481-504
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    • 2010
  • Wireless smart sensor networks (WSSNs) have been proposed by a number of researchers to evaluate the current condition of civil infrastructure, offering improved understanding of dynamic response through dense instrumentation. As focus moves from laboratory testing to full-scale implementation, the need for multi-hop communication to address issues associated with the large size of civil infrastructure and their limited radio power has become apparent. Multi-hop communication protocols allow sensors to cooperate to reliably deliver data between nodes outside of direct communication range. However, application specific requirements, such as high sampling rates, vast amounts of data to be collected, precise internodal synchronization, and reliable communication, are quite challenging to achieve with generic multi-hop communication protocols. This paper proposes two complementary reliable multi-hop communication solutions for monitoring of civil infrastructure. In the first approach, termed herein General Purpose Multi-hop (GPMH), the wide variety of communication patterns involved in structural health monitoring, particularly in decentralized implementations, are acknowledged to develop a flexible and adaptable any-to-any communication protocol. In the second approach, termed herein Single-Sink Multi-hop (SSMH), an efficient many-to-one protocol utilizing all available RF channels is designed to minimize the time required to collect the large amounts of data generated by dense arrays of sensor nodes. Both protocols adopt the Ad-hoc On-demand Distance Vector (AODV) routing protocol, which provides any-to-any routing and multi-cast capability, and supports a broad range of communication patterns. The proposed implementations refine the routing metric by considering the stability of links, exclude functionality unnecessary in mostly-static WSSNs, and integrate a reliable communication layer with the AODV protocol. These customizations have resulted in robust realizations of multi-hop reliable communication that meet the demands of structural health monitoring.

Spatial Gap-filling of GK-2A/AMI Hourly AOD Products Using Meteorological Data and Machine Learning (기상모델자료와 기계학습을 이용한 GK-2A/AMI Hourly AOD 산출물의 결측화소 복원)

  • Youn, Youjeong;Kang, Jonggu;Kim, Geunah;Park, Ganghyun;Choi, Soyeon;Lee, Yangwon
    • Korean Journal of Remote Sensing
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    • v.38 no.5_3
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    • pp.953-966
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    • 2022
  • Since aerosols adversely affect human health, such as deteriorating air quality, quantitative observation of the distribution and characteristics of aerosols is essential. Recently, satellite-based Aerosol Optical Depth (AOD) data is used in various studies as periodic and quantitative information acquisition means on the global scale, but optical sensor-based satellite AOD images are missing in some areas with cloud conditions. In this study, we produced gap-free GeoKompsat 2A (GK-2A) Advanced Meteorological Imager (AMI) AOD hourly images after generating a Random Forest based gap-filling model using grid meteorological and geographic elements as input variables. The accuracy of the model is Mean Bias Error (MBE) of -0.002 and Root Mean Square Error (RMSE) of 0.145, which is higher than the target accuracy of the original data and considering that the target object is an atmospheric variable with Correlation Coefficient (CC) of 0.714, it is a model with sufficient explanatory power. The high temporal resolution of geostationary satellites is suitable for diurnal variation observation and is an important model for other research such as input for atmospheric correction, estimation of ground PM, analysis of small fires or pollutants.

Dry Etching of Flexible Polycarbonate and PMMA in O2/SF6/CH4 Discharges (O2/SF6/CH4 플라즈마를 이용한 플렉시블 Polycarbonate와 PMMA의 건식 식각)

  • Joo, Y.W.;Park, Y.H.;Noh, H.S.;Kim, J.K.;Lee, J.W.
    • Journal of the Korean Vacuum Society
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    • v.18 no.2
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    • pp.85-91
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    • 2009
  • There has been a rapid progress for flexible polymer-based MEMS(Microelectromechanical Systems) technology. Polycarbonate (PC) and Poly Methyl Methacrylate (PMMA), so-called acrylic, have many advantages for optical, non-toxic and micro-device application. We studied dry etching of PC and PMMA as a function of % gas ratio in the $O_2/SF_6/CH_4$ temary plasma. A photoresist pattern was defined on the polymer samples with a mask using a conventional lithography. Plasma etching was done at 100 W RIE chuck power and 10 sccm total gas flow rate. The etch rates of PMMA were typically 2 times higher than those of PC in the whole experimental range. The result would be related to higher melting point of PC compared to that of PMMA. The highest etch rates of PMMA and PC were found in the $O_2/SF_6$ discharges among $O_2/SF_6$, $O_2/CH_4$ and $SF_6/CH_4$ and $O_2/SF_6/CH_4$ plasma composition (PC: ${\sim}350\;nm/min$ at 5 sccm $O_2/5$ sccm $SF_6$, PMMA: ${\sim}570\;nm/min$ at 2.5 sccm $O_2/7.5$ sccm $SF_6$). PC has smoother surface morphology than PMMA after etching in the $O_2/SF_6/CH_4$ discharges. The surface roughness of PC was in the range of 1.9$\sim$3.88 nm. However, that of PMMA was 17.3$\sim$26.1 nm.

Monitoring soybean growth using L, C, and X-bands automatic radar scatterometer measurement system (L, C, X-밴드 레이더 산란계 자동측정시스템을 이용한 콩 생육 모니터링)

  • Kim, Yi-Hyun;Hong, Suk-Young;Lee, Hoon-Yol;Lee, Jae-Eun
    • Korean Journal of Remote Sensing
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    • v.27 no.2
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    • pp.191-201
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    • 2011
  • Soybean has widely grown for its edible bean which has numerous uses. Microwave remote sensing has a great potential over the conventional remote sensing with the visible and infrared spectra due to its all-weather day-and-night imaging capabilities. In this investigation, a ground-based polarimetric scatterometer operating at multiple frequencies was used to continuously monitor the crop conditions of a soybean field. Polarimetric backscatter data at L, C, and X-bands were acquired every 10 minutes on the microwave observations at various soybean stages. The polarimetric scatterometer consists of a vector network analyzer, a microwave switch, radio frequency cables, power unit and a personal computer. The polarimetric scatterometer components were installed inside an air-conditioned shelter to maintain constant temperature and humidity during the data acquisition period. The backscattering coefficients were calculated from the measured data at incidence angle $40^{\circ}$ and full polarization (HH, VV, HV, VH) by applying the radar equation. The soybean growth data such as leaf area index (LAI), plant height, fresh and dry weight, vegetation water content and pod weight were measured periodically throughout the growth season. We measured the temporal variations of backscattering coefficients of the soybean crop at L, C, and X-bands during a soybean growth period. In the three bands, VV-polarized backscattering coefficients were higher than HH-polarized backscattering coefficients until mid-June, and thereafter HH-polarized backscattering coefficients were higher than VV-, HV-polarized back scattering coefficients. However, the cross-over stage (HH > VV) was different for each frequency: DOY 200 for L-band and DOY 210 for both C and X-bands. The temporal trend of the backscattering coefficients for all bands agreed with the soybean growth data such as LAI, dry weight and plant height; i.e., increased until about DOY 271 and decreased afterward. We plotted the relationship between the backscattering coefficients with three bands and soybean growth parameters. The growth parameters were highly correlated with HH-polarization at L-band (over r=0.92).