• The Journal of Korea Institute of Information, Electronics, and Communication Technology
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• v.8 no.4
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• pp.243-248
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• 2015

Since phase noise is one of the most important parameters in the design of microwave oscillators, several methods have been proposed to reduce the phase noise. These methods have focused on improving the quality factor of resonators, which result in low phase noise oscillators. Dielectric resonators have been widely used for low phase noise in microwave oscillators due to their high quality factor. However this cannot be used in MMIC oscillators because they have a 3D structure. In this paper, to overcome this problem a novel resonator using open ring type DGS is proposed for improvement of phase noise characteristics that is weak point of oscillator using planar type microstrip line resonator, and oscillator for 5.8GHz band is designed using proposed DGS resonator. The open ring type DGS resonator is composed of DGS cell etched on ground plane under $50{\Omega}$ microstrip line. At the fundamental frequency of 5.8GHz, 6.1dBm output power and -82.7 dBc@100kHz phase noise have been measured for oscillator with ring type DGS resonator. The phase noise characteristics of oscillator is improved about 96.5dB compared to one using the general ${\lambda}/4$ microstrip resonator.

• Journal of Korean Society of Rural Planning
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• v.21 no.3
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• pp.171-179
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• 2015

The objectives of this research have been focussed on 1) developing prediction techniques for the flash flood and landslide based on rainfall prediction data in agricultural area and 2) developing an integrated forecasting system for the abrupt disasters using USN based real-time disaster sensing techniques. This study contains following steps to achieve the objective; 1) selecting rainfall prediction data, 2) constructing prediction techniques for flash flood and landslide, 3) developing USN and communication network protocol for detecting the abrupt disaster suitable for rural area, & 4) developing mobile application and SMS based early warning service system for local resident and tourist. Local prediction model (LDAPS, UM1.5km) supported by Korean meteorological administration was used for the rainfall prediction by considering spatial and temporal resolution. NRCS TR-20 and infinite slope stability analysis model were used to predict flash flood and landslide. There are limitations in terms of communication distance and cost using Zigbee and CDMA which have been used for existing disaster sensors. Rural suitable sensor-network module for water level and tilting gauge and gateway based on proprietary RF network were developed by consideration of low-cost, low-power, and long-distance for communication suitable for rural condition. SMS & mobile application forecasting & alarming system for local resident and tourist was set up for minimizing damage on the critical regions for abrupt disaster. The developed H/W & S/W for integrated abrupt disaster forecasting & alarming system was verified by field application.

• Journal of the Korean Vacuum Society
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• v.21 no.1
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• pp.29-35
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• 2012

The Hydrogenated silicon nitride (SiNx:H) using plasma enhanced chemical vapor deposition is widely used in photovoltaic industry as an antireflection coating and passivation layer. In the high temperature firing process, the $SiN_x:H$ film should not change the properties for its use as high quality surface layer in crystalline silicon solar cells. Initially PECVD-$SiN_x:H$ film trends were investigated by varying the deposition parameters (temperature, electrode gap, RF power, gas flow rate etc.) to optimize the process parameter conditions. Then by varying gas ratios ($NH_3/SiH_4$), the hydrogenated silicon nitride films were analyzed for its optical, electrical, chemical and surface passivation properties. The $SiN_x:H$ films of refractive indices 1.90~2.20 were obtained. The film deposited with the gas ratio of 3.6 (Refractive index=1.98) showed the best properties in after firing process condition. The single crystalline silicon solar cells fabricated according to optimized gas ratio (R=3.6) condition on large area substrate of size $156{\times}156mm$ (Pseudo square) was found to have the conversion efficiency as high as 17.2%. Optimized hydrogenated silicon nitride surface layer and high efficiency crystalline silicon solar cells fabrication sequence has also been explained in this study.

• The Journal of Korean Institute of Communications and Information Sciences
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• v.30 no.10A
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• pp.922-929
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• 2005

This paper proposes an adaptive pilot beacon equipment for mobile communication systems based on direct spread spectrum technology which generates the pilot channel for handoff between base stations by using the information acquired from the downstream wireless signal regarding the overhead channel information. Such an adaptive pilot beacon equipment will enable low power operation since among the wireless signals, only the pilot channel will be generated and transmitted. The pilot channel in the downstream link of the CDMA receiver is used to acquire time and frequency synchronization and this is used to calibrate the offset for the beacon, which implies that time synchronization using GPS is not required and any location where forward receive signal can be received can be used as the installation site. The downstream link pilot signal searching within the CDMA receiver is performed by FPGA and DSP. The FPGA is used to perform the initial synchronization for the pilot searcher and DSP is used to perform the offset correction between beacon clock and base station clock. The CDMA transmitter the adaptive pilot beacon equipment will use the timing offset information in the pilot channel acquired from the CDMA receiver and generate the downstream link pilot signal synchronized to the base station. The intermediate frequency signal is passed through the FIR filter and subsequently upconverted and amplified before being radiated through the antenna.

• Korean Journal of Optics and Photonics
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• v.15 no.4
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• pp.385-390
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• 2004

In this paper, we designed a 4-bit optical true time-delay(TTD) for phased array antennas(PAAs), which is composed of a wavelength-fixed optical source, 2 ${\times}$ 2 optical MEMS switches, and fiber-optic delay lines. A 4-bit TTD with a unit time delay difference of 6 ps for 10-GHz PAAs has been implemented. Measurement results on time delay show an error of -0.4 ps at maximum, corresponding to a radiation angle error of less than 1.63$^{\circ}$. Thus, the TTD implemented in this research performs in excellent agreement with theory. Each TTD line, composed of MEMS switches and fiber-optic delay lines, connected to the corresponding antenna element has insertion loss in between 1.36 ㏈ and 2.40 ㏈ depending upon the setup of the switches. On the other hand, the insertion loss difference between TTD lines was 0.32 ㏈ at maximum for a fixed radiation angle. The TTD structure proposed in this paper might be more reliable and economical than those previously proposed using tunable wavelength sources if proper power equalization either with gain control of RF amplifiers or variable attenuators is achieved.

• Korean Journal of Applied Biomechanics
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• v.25 no.3
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• pp.275-281
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• 2015

Objective : In order for Taekwondo athletes to perform destructive kicking performance, they are expected to have Taekwondo-specific muscle properties such as high muscle strength and power. The purpose of this study was to investigate the joint angle-dependent force-producing property of Taekwondo athletes' knee extensor muscles, which is one of the primary muscle groups involved in kicking performance. Method : Ten Taekwondo male athletes (age: $19.9{\pm}0.7yrs$, height: $180.6{\pm}6.2cm$, body mass: $75.9{\pm}8.9kg$, career: $9.2{\pm}2.9yrs$.) and 10 healthy male non-athletes (age: $26.3{\pm}2.6yrs$, height: $174.2{\pm}4.8cm$, body mass: $72.8{\pm}7.7kg$) participated in this study. Subjects performed maximum isometric knee extension at knee joint angles of $40^{\circ}$, $60^{\circ}$, $80^{\circ}$, and $100^{\circ}$ (the full knee extension was set to $0^{\circ}$) with the hip joint angles of $0^{\circ}$ and $80^{\circ}$ (the full extension was set to $0^{\circ}$). During the contractions, knee extension torque using an isokinetic dynamometer simultaneously with muscle activities of the rectus femoris (RF), and the vastus lateralis (VL) and vastus medialis (VM) using surface electromyography were recorded. Based on the torque values at systematically different knee-hip joint angles, the joint torque-angle relationships were established and then the optimal joint angle for the knee extensor was estimated. Results : The results of this study showed that the isometric knee extension torque values were greater for the Taekwondo athletes compared with the non-athlete group at all hip-knee joint angle combinations (p<.05). When the hip joint was set at $80^{\circ}$, the peak isometric torque was greater for the Taekwondo athletes compared with the non-athlete group ($313.61{\pm}36.79Nm$ and $221.43{\pm}35.92Nm$, respectively; p<.05) but the estimated optimum knee joint angles were similar ($62.33{\pm}5.71^{\circ}$ and $62.30{\pm}4.67^{\circ}$ for the Taekwondo athletes and non-athlete group, respectively). When the hip joint was set at $0^{\circ}$, the peak isometric torque was greater for the Taekwondo athletes compared with the non-athlete group ($296.29{\pm}45.13Nm$ and $199.58{\pm}25.23Nm$, respectively; p<.05) and the estimated optimum knee joint angle was larger for the Taekwondo athletes compared with the non-athlete group ($78.47{\pm}5.14^{\circ}$ and $67.54{\pm}5.77^{\circ}$, respectively; p<.05). Conclusion : The results of this study suggests that, compared with non-athletes, Taekwondo athletes have stronger knee extensor strength at all hip-knee joint angle combinations as well as longer optimum muscle length, which might be optimized for the event-specific required performance through prolonged training period.

• The Journal of Korean Institute of Electromagnetic Engineering and Science
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• v.21 no.4
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• pp.381-391
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• 2010

In this paper, a novel frequency reconfigurable active array antenna(RAA) system, which can be reconfigurable for three reconfigurable frequency bands, is proposed by using commercial RF MEMS switches. The MEMS switch shows excellent insertion loss, linearity, as well as isolation. So, the system performance degradation of the reconfigurable system by using MEMS switches can be minimized. The proposed frequency reconfigurable active antenna system is consisted with the noble frequency reconfigurable front-end amplifiers(RFA) with the simple reconfigurable impedance matching circuits(RMC), reconfigurable antenna elements(RAE), as well as a reconfiguration control board(RCB) for MEMS switch control. The proposed RAA system can be reconfigurable for three frequency bands, 850 MHz, 1.9 GHz, and 3.4 GHz, with $2{\times}2$ array of the RAE having broadband printed dipole antenna topology. The validity of the proposed RFA as well as RAA is also presented with the experimental results of the fabricated systems.

• Journal of the Mineralogical Society of Korea
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• v.14 no.2
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• pp.99-110
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• 2001

A gem-quality yttria-stabilized zirconium oxide crystals were synthesized by the skull-melting method, using the RF electrical apparatus. Principal raw materials used were $ZrO_2$and 25 wt.% $Y_2O_3$as stabilizer and 0.03~0.05 wt.% $Nd_2O_3$decolorizing agent were added to it. The single crystals were approximately 20$\times$63 mm in size with chemical composition $Zr_{0.73}$ $Y_{0.27}$ $O_{1.87}$ . The crystals are isotropic with no appreciable anisotropism under a polarizing microscope. Their refractive indices are in the range of 2.15~2.18, specific gravity 5.85, Mohs' hardness 8~8.5, and reflectivity 13.47%. The zirconia crystals were confirmed to have cubic structure with Face-centered lattice(Z=4), space group Fm3m ($CaF_2$-type structure) and unit cell parameters are a=5.157 $\AA$. The optimal growing conditions for yttria-stabilized zirconia are 50 kW, 2.94 MHz in power and to use a crucible with 105 mm $\times$ 135 mm in size. When the lowering speed of the crucible was set 16mm/hr gave the best yield, 42%. Since the refractive index(2.15~2.18) of cubic zirconia is smaller than that of diamond, the angle between crown and pavilion should be fashioned to make it smaller than $40.5^{\circ}$ to show the maximum brilliancy and fire.

• Proceedings of the Korean Vacuum Society Conference
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• 1998.02a
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• pp.77-77
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• 1998

Present silicon dioxide (SiOz) 떠m as intennetal dielectridIMD) layers will result in high parasitic c capacitance and crosstalk interference in 비gh density devices. Low dielectric materials such as f f1uorina뼈 silicon oxide(SiOF) and f1uoropolymer IMD layers have been tried to s이ve this problem. I In the SiOF ftlm, as fluorine concentration increases the dielectric constant of t뼈 film decreases but i it becomes unstable and wa않r absorptivity increases. The dielectric constant above 3.0 is obtain어 i in these ftlms. Fluoropolymers such as polyte$\sigma$따luoroethylene(PTFE) are known as low dielectric c constant (>2.0) materials. However, their $\alpha$)Or thermal stability and low adhesive fa$\pi$e have h hindered 야1리ru뚱 as IMD ma따"ials. 1 The concept of a plasma processing a찌Jaratus with 비gh density plasma at low pressure has r received much attention for deposition because films made in these plasma reactors have many a advantages such as go여 film quality and gap filling profile. High ion flux with low ion energy in m the high density plasma make the low contamination and go어 $\sigma$'Oss피lked ftlm. Especially the h helicon plasma reactor have attractive features for ftlm deposition 야~au똥 of i앙 high density plasma p production compared with other conventional type plasma soun:es. I In this pa야Jr, we present the results on the low dielectric constant fluorocarbonated-SiOF film d밑JOsited on p-Si(loo) 5 inch silicon substrates with 00% of 0dFTES gas mixture and 20% of Ar g gas in a helicon plasma reactor. High density 띠asma is generated in the conventional helicon p plasma soun:e with Nagoya type ill antenna, 5-15 MHz and 1 kW RF power, 700 Gauss of m magnetic field, and 1.5 mTorr of pressure. The electron density and temperature of the 0dFTES d discharge are measUI벼 by Langmuir probe. The relative density of radicals are measured by optic허 e emission spe따'Oscopy(OES). Chemical bonding structure 3I피 atomic concentration 따'C characterized u using fourier transform infrared(FTIR) s야3띠"Oscopy and X -ray photonelectron spl:’따'Oscopy (XPS). D Dielectric constant is measured using a metal insulator semiconductor (MIS;AVO.4 $\mu$ m thick f fIlmlp-SD s$\sigma$ucture. A chemical stoichiome$\sigma$y of 야Ie fluorocarbina$textsc{k}$영-SiOF film 따~si야영 at room temperature, which t the flow rate of Oz and FTES gas is Isccm and 6sccm, res야~tvely, is form려 야Ie SiouFo.36Co.14. A d dielec$\sigma$ic constant of this fIlm is 2.8, but the s$\alpha$'!Cimen at annealed 5OOt: is obtain려 3.24, and the s stepcoverage in the 0.4 $\mu$ m and 0.5 $\mu$ m pattern 킹'C above 92% and 91% without void, res야~tively. res야~tively.

• Proceedings of the Korean Vacuum Society Conference
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• 2012.02a
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• pp.478-478
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• 2012

Recently, there are many researches in order to increase the deposition rate (D/R) and improve film uniformity and quality in the deposition of microcrystalline silicon thin film. These two factors are the most important issues in the fabrication of the thin film solar cell, and for the purpose of that, several process conditions, including the large area electrode (more than 1.1 X 1.3 (m2)), higher pressure (1 ~ 10 (Torr)), and very high frequency regime (VHF, 40 ~ 100 (MHz)), have been needed. But, in the case of large-area capacitively coupled discharges (CCP) driven at frequencies higher than the usual RF (13.56 (MHz)) frequency, the standing wave and skin effects should be the critical problems for obtaining the good plasma uniformity, and the ion damage on the thin film layer due to the high voltage between the substrate and the bulk plasma might cause the defects which degrade the film quality. In this study, we will propose the new concept of the large-area multi-electrode (a new multi-electrode concept for the large-area plasma source), which consists of a series of electrodes and grounds arranged by turns. The experimental results with this new electrode showed the processing performances of high D/R (1 ~ 2 (nm/sec)), controllable crystallinity (~70% and controllable), and good uniformity (less than 10%) at the conditions of the relatively high frequency of 40 MHz in the large-area electrode of 280 X 540 mm2. And, we also observed the SEM images of the deposited thin film at the conditions of peeling, normal microcrystalline, and powder formation, and discussed the mechanisms of the crystal formation and voids generation in the film in order to try the enhancement of the film quality compared to the cases of normal VHF capacitive discharges. Also, we will discuss the relation between the processing parameters (including gap length between electrode and substrate, operating pressure) and the processing results (D/R and crystallinity) with the process condition map for ${\mu}c$-Si:H formation at a fixed input power and gas flow rate. Finally, we will discuss the potential of the multi-electrode of the 3.5G-class large-area plasma processing (650 X 550 (mm2) to the possibility of the expansion of the new electrode concept to 8G class large-area plasma processing and the additional issues in order to improve the process efficiency.