• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.10
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• pp.2194-2200
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• 2010

In this paper, the power detectors using metamaterials were designed and fabricated for multi-band six-port direct conversion method. The RF short-stubs for power detector were designed by using metamaterials which provide multi-band characteristics. The power detectors with metamaterial RF short-stub were analyzed and fabricated by using lumped and distributed element. The measured results of metamaterial power detectors show the good agreement with the simulation results. The performance of lumped-metamaterial RF short-stub shows the insertion loss below 1 dB and the good frequency response characteristics. Also, the distributed-metamaterial RF short-stub shows the good frequency response characteristics and the insertion loss under that of lumped-metamaterial RF short-stub. The multi-band power detectors with metamaterial RF short-stub detect the input RF signal in the designed dual frequency bands very well.

• Journal of the Korea Institute of Information and Communication Engineering
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• v.14 no.9
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• pp.2164-2170
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• 2010

Digital Radio Frequency Memory, ( as DRFM ), is a device with the ability to restore output to the input RF signal in the required time after storing the incoming RF signals. Therefore DRFM is widely used in Jammer, EW Simulator, Target Echo Generator, and so on. This paper proposes its hardware implementation composed with the high frequency part and the digital processing part consisting of RF input/output module and local oscillator module. It is also proposed the replicated signal generation method which is consisted of the Analog-Digital conversion in the form of pulsed RF signal quantization, and FPGA to save and produce the playback signal, and RF signals to produce a Digital-Analog Conversion in the digital processing unit. This proposed scheme applied to test board and confirmed the validity of the proposed scheme through the test results obtained by the simulated input signals.

• Journal of the Korea Academia-Industrial cooperation Society
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• v.8 no.3
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• pp.454-459
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• 2007

In this work, micro-scale, high-performance solenoid-type RF chip inductors utilizing amorphous $Al_2O_3$ core material were investigated. The size of the chip inductors was $0.86{\times}0.46{\times}0.45mm^3$ and copper(Cu) wire with $27{\mu}m$ diameter was used as the coil. High frequency characteristics of the inductance(L), quality factor(Q), impedance(Z), and equivalent circuit parameters of the RE chip inductors were measured and analyzed using an RF impedance/material analyzer(HP4291B with HP16193A test fixture). It was observed that the RF chip inductors with the number of turns of 9 to 12 have the inductance of 21 to 34nH and exhibit the self-resonant frequency(SRF) of 5.7 to 3.7GHz. The SRF of inductors decreases with increasing the inductance and inductors have the quality factor of 38 to 49 in the frequency range of 900MHz to 1,7GHz.

• Journal of the Korean Society for Nondestructive Testing
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• v.27 no.3
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• pp.217-223
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• 2007

This paper introduces an active sensing node using radio-frequency (RF) telemetry. This device has brought the traditional impedance-based structural health monitoring (SHM) technique to a new paradigm. The RF active sensing node consists of a miniaturized impedance measuring device (AD5933), a microcontroller (ATmega128L), and a radio frequency (RF) transmitter (XBee). A macro-fiber composite (MFC) patch interrogates a host structure by using a self-sensing technique of the miniaturized impedance measuring device. All the process including structural interrogation, data acquisition, signal processing, and damage diagnostic is being performed at the sensor location by the microcontroller. The RF transmitter is used to communicate the current status of the host structure. The feasibility of the proposed SHM strategy is verified through an experimental study inspecting loose bolts in a bolt-jointed aluminum structure.

• Proceedings of the IEEK Conference
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• 2002.07b
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• pp.1046-1049
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• 2002

In this paper, a sub-harmonic dual-gate FET mixer for IMT-2000 base-station was designed by using single-gate FET cascode structure and driven by the second order harmonic component of LO signal. The dual-gate FET mixer has the characteristic of high conversion gain and good isolation between ports. Sub-harmonic mixing is frequently used to extend RF bandwidth for fixed LO frequency or to make LO frequency lower. Furthermore, the LO-to-RF isolation characteristic of a sub-harmonic mixer is better than that of a fundamental mixer because the frequency separation between the RE and LO frequency is large. As RF power is -30dBm and LO power is 0dBm, the designed mixer shows the -47.17dBm LO-to-RF leakage power level, 10dB conversion gain, -0.5dBm OIP3, -10.5dBm IIP3 and -1dBm 1dB gain compression point.

• Advances in materials Research
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• v.1 no.1
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• pp.37-49
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• 2012

In this paper, we present modeling and characterization of CNT-based TSVs to be used in high-frequency RF applications. We have developed an integrated model of CNT-based TSVs by incorporating the quantum confinement effects of CNTs with the kinetic inductance phenomenon at high frequencies. Substrate parasitics have been appropriately modeled as a monolithic microwave capacitor with the resonant line technique using a two-polynomial equation. Different parametric variations in the model have been outlined as case studies. Furthermore, electrical performance and signal integrity analysis on different cases have been used to determine the optimized configuration for CNT-based TSVs for high frequency RF applications.

• Journal of Information Display
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• v.12 no.2
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• pp.109-113
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• 2011

This paper summarizes the recent fabrication and characterizations of flexible high-speed radio frequency (RF) transistors, PIN-diode single-pole single-throw switches, as well as flexible inductors and capacitors, based on single-crystalline Si nanomembranes transferred on polyethylene terephthalate substrates. Flexible thin-film transistors (TFTs) on plastic substrates have reached RF operation speed with a record cut-off/maximum oscillation frequency ($f_T/f_{max}$) values of 3.8/12 GHz. PIN diode switches exhibit excellent ON/OFF behaviors at high RF frequencies. Flexible inductors and capacitors compatible with high-speed TFT fabrication show resonance frequencies ($f_{res}$) up to 9.1 and 13.5 GHz, respectively. Robust mechanical characteristics were also demonstrated with these high-frequency passives components.

• Journal of Communications and Networks
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• v.18 no.2
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• pp.201-209
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• 2016

In wireless sensor networks (WSNs) duty cycling has been an imperative choice to reduce idle listening but it introduces sleep delay. Thus, the conventional WSN medium access control protocols are bound by the energy-latency tradeoff. To break through the tradeoff, we propose a radio wave sensor called radio frequency (RF) wakeup sensor that is dedicated to sense the presence of a RF signal. The distinctive feature of our design is that the RF wakeup sensor can provide the same sensitivity but with two orders of magnitude less energy than the underlying RF module. With RF wakeup sensor a sensor node no longer requires duty cycling. Instead, it can maintain a sleep state until its RF wakeup sensor detects a communication signal. According to our analysis, the response time of the RF wakeup sensor is much shorter than the minimum transmission time of a typical communication module. Therefore, we apply duty cycling to the RF wakeup sensor to further reduce the energy consumption without performance degradation. We evaluate the circuital characteristics of our RF wakeup sensor design by using Advanced Design System 2009 simulator. The results show that RF wakeup sensor allows a sensor node to completely turn off their communication module by performing the around-the-clock carrier sensing while it consumes only 0.07% energy of an idle communication module.

• Journal of Broadcast Engineering
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• v.21 no.5
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• pp.803-815
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• 2016

In this paper, we design a direct radio frequency (RF) sampling receiver for multiband GNSS signals and demonstrate its performance. The direct RF sampling is a technique that does not use an analog mixer, but samples the passband signal directly, and all receiver processes are done in digital domain, whereas the conventional intermediate frequency (IF) receiver samples the IF band signals. In contrast to the IF sampling receiver, the RF sampling receiver is less complex in hardware, reconfigurable, and simultaneously converts multiband signals to digital signals with an analog-to-digital (AD) converter. The reconfigurability and simultaneous reception are very important in military applications where rapid change to other system is needed when a system is jammed by an enemy. For simultaneous reception of multiband signals, the sampling frequency should be selected with caution by considering the carrier frequencies, bandwidths, desired intermediate frequencies, and guard bands. In this paper, we select a sampling frequency and design a direct RF sampling receiver to receive multiband global navigation satellite system (GNSS) signals such as GPS L1, GLONASS G1 and G2 signals. The receiver is implemented with a commercial AD converter and software. The receiver performance is demonstrated by receiving the real signals.

• Journal of the Institute of Electronics Engineers of Korea SD
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• v.37 no.1
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• pp.8-18
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• 2000

We presented a BGA(Ball Grid Array) package for RF circuit modules and extracted its electrical parameters. As the frequency of RF system devices increases, the effect of its electrical parasitics in the wireless communication system requires new structure of RF circuit modules because of its needs to be considered of electrical performance for minimization and module mobility. RF circuit modules with BGA packages can provide some advantages such as minimization, shorter circuit routing, and noise improvement by reducing electrical noise affected to analog and digital mixed circuits, etc. We constructed a BGA package of ITS(Intelligent Transportation System) RF module and measured electrical parameters with a TDR(Time Domain Reflectometry) equipment and compared its electrical parasitic parameters with PCB RF circuits. With a BGA substrate of 3${\times}$3 input and output terminals, we have found that self capacitance of BGA solder ball is 68.6fF, and self inductance 146pH, whose values were reduced to 34% and 47% of the value of QFP package structure. S11 parameter measurement with a HP4396B Network Analyzer showed the resonance frequency of 1.55GHz and the loss of 0.26dB. Routing length of the substrate was reduced to 39.8mm. Thus, we may improve electrical performance when we use BGA package structures in the design of RF circuit modules.