• Proceedings of the Korean Vacuum Society Conference
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• 2014.02a
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• pp.259.2-259.2
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• 2014

Multi-crystal Silicon wafer를 대기압에서 리모트타입의 RF-DBD를 이용하여 에칭을 하였다. DBD소스의 전극으로 알루미늄을 사용하였고 유전체로는 알루미나를 사용하였다(전극 갭을 기록). 전원공급은 13.56 MHz RF 전원장치를 이용하였으며 아르곤과 SF6 유량을 변수로 하여 실험하였다. Ar 유량은 2~10 slm, SF6는 0.2~1 slm으로 변화를 주어 최적화 조건을 찾았다. 결론적으로 SF6의 유량이 증가할수록 Si 에칭율이 증가하였다. 그러나 SF6의 유량이 2 lm일 때 에칭율이 감소하였다. 그리고 scan time이 45초일 때 $2.3{\mu}m/min$로 최대 에칭율을 얻었다.

• Proceedings of the Korean Vacuum Society Conference
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• 2013.08a
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• pp.139.2-139.2
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• 2013

6" Multi-crystal Silicon wafer has etched suing a remote - type RF Dielectric barrier discharge (RF DBD) at atmospheric pressure. DBD source is composed of Al electrode and coated Al2O3 dielectric as function of Ar/NF3 gas combination and input power used 13.56 MHz power supply. Ar gas flow rate is changed from 2 to 10 Slm, and NF3 flow rate is changed from 0.2~1 slm. At the result, NF3 flow rate Si etching rate also increase whit the increasing of NF3 flow rate But at 2 slm etching rate was decrease. In this experience, Max etching rate is 2.3 ${\mu}m/min$ when the scan time is 45 sec.

• Proceedings of the Korean Vacuum Society Conference
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• 2011.02a
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• pp.226-226
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• 2011

소형 대기압 플라즈마 소스는 그 형태에 따라 DBD (Dielectric Barrier Discharge)나 Plasma Needle, 혹은 Plasma Jet 등으로 구별되며, 구동 파형의 특성에 따라 DC, RF (Radio Frequency), 혹은 Pulsed 방식 등으로 나뉜다. 또한 코로나 방전도 소형 대기압 플라즈마 장치에서 사용된다. DBD는 1857년 Siemens에 의해 최초로 보고 되었고 산업 분야에서 대규모로 사용되어 왔다. 본 연구에서는 대향 방전 DBD 대신 유전체 양쪽 면에 전극이 도포된 면방전 형태의 DBD 구조 내부로 He 가스가 흐를 때의 방전에 대한 광학적 진단을 수행하였다. 전극간의 거리와 가스 유속의 변화에 따라 방전 특성이 어떻게 달라지에 대해서 Optical Emission Spectroscopy (OES)를 통하여 생성되는 radical 종의 변화를 측정하고 ICCD (intensified charge coupled device) image를 통해 방전이 시간에 따라 어떻게 진행되는지를 진단하였다.

• Journal of the Korean Society for Precision Engineering
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• v.26 no.3
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• pp.122-128
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• 2009

DBD(Dielectric Barrier Discharges) plasma is often used to clean the surface of semiconductor. The cleaning performance is affected mainly by plasma density and duration time. In this study, the plasma density is predicted by coupled simulation of flow, chemistry mixing and reaction, plasma, and electric field. 13.56 MHz of RF source is used to generate plasma. The effect of dielectric thickness, gap distance, and flow velocity on plasma density is investigated. It is shown that the plasma density increases as the dielectric thickness decreases and the gap distance increases.

• Journal of the Semiconductor & Display Technology
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• v.17 no.2
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• pp.16-19
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• 2018

The development speed of semiconductor and display device manufacturing technology is growing faster than the development speed of process equipment. So, there is a growing need for process diagnostic technology that can measure process conditions in real time and directly. In this study, a plasma diagnosis was carried out using impedance variation due to the plasma discharge. Variation of the measurement impedance appears as a voltage change at the reference impedance, and the plasma density is calculated using this. The above experiment was conducted by integrating the plasma diagnosis system and the linear atmospheric pressure DBD plasma source. It was confirmed that plasma density varies depending on various parameters (gas flow rate, $Ar/O_2$ mixture ratio, Input power).

• Applied Science and Convergence Technology
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• v.26 no.4
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• pp.74-78
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• 2017

The discharge characteristics of the radio frequency (RF) surface dielectric barrier discharge have been simulated for the investigation of the ratio of the ion transit time to the RF period. From one-dimensional particle-in-cell (PIC) simulation for a planar dielectric barrier discharge (DBD), it was observed that the high-frequency driving voltage confines the ions in the plasma because of a shorter RF period than the ion transit time. For two-dimensional surface dielectric barrier discharges, a fluid simulation is performed to investigate the characteristics of RF discharges from 1 MHz to 40 MHz. The ratio of the peak density to the average density decreases with the increasing frequency, and the spatiotemporal discharge patterns change abruptly with the change in the ratio of ion transit time to the RF period.

• Journal of the Korean Vacuum Society
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• v.15 no.2
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• pp.117-138
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• 2006

Plasmas can be made by electrical discharge on earth. Most of the plasmas on earth have been generated in low pressure environments where the pressure is less than one millionth of the atmospheric pressure. However, there are many plasma applications which require high pressure plasmas. Therefore, scientists start research on plasma generation at high pressure to avoid use of expensive vacuum equipments. Large-volume inexpensive plasmas are needed in the areas of material processing, environmental protection and improvement, efficient energy source and applications, etc. We therefore developed new methods of plasma generations at high pressure and carried out research of applying these plasmas to high tech industries representing 21 century. These research fields will play pivotal roles in material, environmental and energy science and technology in future.

• Polymer(Korea)
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• v.29 no.6
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• pp.581-587
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• 2005

Commercial polyurethane film (PU) was modified with Ar plasma ionized in dielectric barrier discharge (DBD) plate-type reactor under atmospheric pressure. We measured the change of the contact angle and the surface fee energy with respect to the plasma treatment conditions such as treatment time, RF-power, and Ar gas flow rate. We also optimized the plasma treatment conditions to maximize the surface peroxide concentration. At the plasma treatment time of 70 sec, the power of 120 W and the Ar gas flow rate of 5 liter per minute (LPM), the best wettability and the highest surface fee energy were obtained. The 1,1 diphenyl-2-picrylhydrazyl (DPPH) method confirmed that the surface peroxide concentration was about 2.1 nmol/$\cm^{2}$ at 80 W, 30 sec, 6 LPM.

• Korean Journal of Materials Research
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• v.16 no.9
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• pp.543-549
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• 2006

Polyimides (PI) are treated with $He/O_2$ and $He/O_2/NF_3$ atmospheric pressure rf dielectric barrier discharge in order to investigate the roles of $NF_3$ that is one of the PI etching gases. Surface changes are analyzed by x-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and contact angle measurement. The surface roughness of PI and the ratio of C=O, which is hydrophilic functional group, is more increased by $He/O_2/NF_3$ discharge than by $He/O_2$ discharge. The C=O species on the PI surface is increased up to 30 percent with rf power. The surface roughness of PI is increased from 0.4 to 11 nm with rf power. The water drop contact angles on PI, however, are reduced from $65^{\circ}\;to\;9^{\circ}$ by plasma treatment independently of $NF_3$.

• Journal of the Korean Vacuum Society
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• v.19 no.1
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• pp.22-27
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• 2010

To improve surface wettability, each sample was treated by atmospheric pressure plasma (APP) using dielectric barrier discharge (DBD) system. Argon and oxygen gases were used for treatment gas to modify the $TiO_2$ surface by APP with RF power range from 50 to 200 W. Water contact angle was decreased from $20^{\circ}$ to $10^{\circ}$ with argon only. However, water contact angle was decreased from $20^{\circ}$ to < $1^{\circ}$ with mixture of argon and oxygen. Water contact angle with $O_2$ plasma was lower than water contact angle with Ar plasma at the same RF power. It seems to be increasing the polar force of $TiO_2$ surface. Also, analysis result of X-ray photoelectron spectra (XPS) shows the increase of intensity of O1s shoulder peak, resulting in increasing of surface wettability by APP. Moreover, each water contact angle increased according to increase past time. However, contact angle increase with plasma treatment was lower than without plasma treatment. Additionally, the efficiency of $TiO_2$ photocatalyst was improved by plasma surface-treatment through the degradation experiment of phenol.