• Journal of the Korean Magnetics Society
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• v.3 no.3
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• pp.201-207
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• 1993

Starting ingot of $Pr_{15}Fe_{77}B_{8}$ were prepared by vacuum induction melting under argon atmosphere. The ingot were induction melted in a quartz crucible and then ejected as a molten alloy throuth a 0.6 mrn orifice onto a rotating cop¬per wheel. An anisotropic magnet was prepared from ribbon by hot deformation techniques. A fully dense precursor magnet first made by pressing ribbons at $680^{\circ}C$ under a pressure of $21.8\;kg/mm^{2}$. A substantially oriented magnets were obtained by die-upset under various conditions. As the compression ratio increases, the $B_{r}$ value increases pronouncedly though $_{i}H_{c}$ decreases. Also, XRD analyses show increased diffraction peak from (006). From these results, it can be known that the magnetic easy axis was formed along the compression axis. As the die-upset speed increases, $_{i}H_{c}$ increases though $B_{r}$ decreases. The $B_{r}$ increases up to $750^{\circ}C$ of die-upset temperature and above this temperature decreases. The value of $4{\pi}M_{s}$ of the $Pr_{15}Fe_{77}B_{8}$ alloy prepared is found to be 11.8 KG. When the alloy was compressed by 0.8 under the die-upset speed of 0.05 m/sec at $750^{\circ}C$, $B_{r}$ was 11.0 KG indicating that the alloy has excellent magnetic anistropy. However, this alloy has some limitation because of low $_{i}H_{c}$.

• Korean Journal of Materials Research
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• v.2 no.6
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• pp.417-427
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• 1992

Silicon ion implantation was performed to LPCVD amorphous Si films and the low temperature annealing process followed with various conditions to find the optimal physical properties by studying recrystallization behavior. The uniformity of the recrystallized films was inspected by optical microscopy and for this purpose, new KOH: (IPA) : $H_2$O: $K_2$C${r_2}{O_7}$, etchant was developed. XRD and TEM results showed that the crystallites were grown as a form of dendrite with (111) preferred orientation, and the grain size was increased with dose concentration. The maximum grain size was obtained when the 3${\times}{10^{15}}$c$m^2$ implanted amorphous Si film was recrystallized at 55 $0^{\circ}C$for more than 40 hrs and at this condition the grain size was 3.2${\mu}$m.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2008.11a
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• pp.177-177
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• 2008

The effect of several $SiO_2-B_2O_3-Al_2O_3$-R(R;Ca, Sr, Ba) borosilicate glass system on sintering behavior, dielectric properties and mechanical properties of glass/ceramic composites were investigated. The amount of '+2 valency' metal elements(Ca, Sr, Ba) were examined in LTCC composite of low k glass with cordierite filler. It was sintered for 60minutes in temperature range from 850C to 950. Properties of frit and glass/ceramic composites were analyzed by DTA, XRD, SEM, Network Analyzer, UTM and so on. Dielectric constant ($\varepsilon_r$) and $Q{\times}f_0$ (Q) of the composite with 50% glass contents demonstrated $\varepsilon_r$ = 5.4 $Q{\times}f_0$ = 1600 GHz. Sintering was complete and maximum bending strength of 160MPa was obtained.

• Journal of the Korean Electrochemical Society
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• v.8 no.1
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• pp.37-41
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• 2005

We investigated the electrochemical properties and microstructure on the various argon deposition pressure $(P_{Ar})$ and the low annealing temperature $(400^{\circ}C)$ of $LiCoO_2$ cathodes, which deposited by R.F. magnetron sputtering. The microsuucture and composition of Lico02 thin film was changed as a function of $P_{Ar}$. The capacity and electrochemical properties were improved with Ph of $LiCoO_2$ thin films. The cycling reversibility and stability of thin film batteries were measured by cyclic voltammetry and the constant current charge-discharge. The physical properties of cathode films were analyzed by ICP-AES, XRD, SEM and AFM for composition, crystallization and surface morphology.

• Journal of the Korean Vacuum Society
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• v.18 no.2
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• pp.108-115
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• 2009

The superlattice infrared photodetector (SLIP) with an active layer of 8/8-ML InAs/GaSb type-II strained-layer superlattice (SLS) of 150 periods was grown by MBE technique, and the proto-type discrete device was defined with an aperture of $200-{\mu}m$ diameter. The contrast profile of the transmission electron microscope (TEM) image and the satellite peak in the x-ray diffraction (XRD) rocking curve show that the SLS active layer keeps abrupt interfaces with a uniform thickness and a periodic strain. The wavelength and the bias-voltage dependences of responsivity (R) and detectivity ($D^*$) measured by a blackbody radiation source give that the cutoff wavelength is ${\sim}5{\mu}m$, and the maximum Rand $D^*$ ($\lambda=3.25{\mu}m$) are ${\sim}10^3mA/W$ (-0.6 V/13 K) and ${\sim}10^9cm.Hz^{1/2}/W$ (0 V/13 K), respectively. The activation energy of 275 meV analyzed from the temperature dependent responsivity is in good agreement with the energy difference between two SLS subblevels of conduction and valence bands (HH1-C) involving in the photoresponse process.

• Journal of Sensor Science and Technology
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• v.6 no.2
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• pp.155-162
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• 1997

Zinc oxide(ZnO) thin films were deposited on r-plane sapphires from a solution containing zinc acetate. The films were obtained in a hot wall reactor by the pyrolysis of an aerosol produced by an ultrasonic generator. The crystallinity, surface morphology and composition of the films have been studied using the x-ray diffraction method(XRD) scanning electron microscopy(SEM) and Auger electron spectroscopy (AES) respectively. The influences of the substrate temperature on the crystallinity of the films were studied. Strongly (110) oriented ZnO films were obtained at a substrate temperature of $350^{\circ}C$. The resistivity was increased to above $3{\times}10^{6}{\Omega}{\cdot}cm$ with copper doping and vapor oxidation.

• Korean Journal of Materials Research
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• v.9 no.12
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• pp.1245-1251
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• 1999

Phase-change optical disk very rapid recording, high densification of data, resulting in high feedback rate and good C/N(carrier to noise) ratio of a feedback signal. However, repetitive thermal energy may cause the deformation of a disk or the lowering of an eliminability and a cyclability of the recording. The lowering of the cyclability can be reduced by insertion of thin layer of ZnS-$SiO_2$ dielectric thin film in appropriate disk structure between the upper and lower part of the recording film. Using the Taguchi method, optimum conditions satisfying both the optimized quality characteristic values and the scattering values for film formation were found to be the target R.F. power of 200W, the substrate R.F. power of 20W, the Ar pressure of 6mTorr, and the electrode distance of 6cm. From the refractive index data, the existence of the strong interaction between the electrode distance and Ar pressure was confirmed, and so was the large effect of the electrode distance on transmittance. According to the analysis of TEM and XRD, the closer the electrode distance was, the finer was the grain size due to the high deposition rate. However, the closer electrode distance brought the negative effect on the morphology of the film and caused the reduction of transmittance. AFM and SEM analyses showed that the closer the electrode distance was, the worse was the morphology due to the high rate of the deposition. Under optimum condition, the deposited thin film showed a good morphology and dense microstructure with less defects.

• Journal of Magnetics
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• v.9 no.2
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• pp.52-59
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• 2004

As deposited and annealed MTJs with the structure of $Ta(5 nm)/Cu(10 nm)/Ta(5 nm)/Ni_{80}Fe_{20}(2 nm)/Cu(5 nm)/ Ir_{25}Mn_{75}(10 nm)/Co_{70}Fe_{30}(2.5 nm)/Al-O/Co_{70}Fe_{30}(2.5nm)/Ni_{80}Fe_{20}(t)/Ta(5nm)/Ni_{80}Fe_{20}(t)/Ta(5 nm)$, where t=10, 30, 60 and 100 nm were characterized by XRD and magnetic hysteresis loops measurements. The XRD measurements were done in grazing incidence $(GID scan-2{\theta})$ and ${\theta}-2{\theta}$ geometry, by rocking curve $(scan-{\omega})$ and pole figures in order to establish correlation between texture and crystallites size and magnetic parameters of exchange biased and interlayer coupling. The variations of shifting and coercivity field of free and pinned layers after annealing in $300^{\circ}C$ correlate with the improvement of ［111］ texture and grains size of $Ni_{80}Fe_{20}$ and $Ir_{25}Mn_{75}$ respectively. The exchange biased and the coercivity fields of the pinned layer linearly increased with increasing grain size of $Ir_{25}Mn_{75}$, The reciprocal proportionality between interlayer coupling and coercivity fields of the free layer and grain size of $Ni_{80}Fe_{20}$ was found. The enhancement of interlayer coupling between pinned and free layers, after annealing treatment, indicates on the correlated in-phase roughness of dipolar interacting interfaces due to increase of crystallites size of $Ni_{80}Fe_{20}$.

• Bulletin of the Korean Chemical Society
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• v.32 no.6
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• pp.1865-1872
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• 2011

This study investigates the sensitivity of a gas sensor to volatile organic compounds (VOCs) at various operating temperatures and catalysts. Nano-sized powdered $WO_3$ prepared by sol-gel and chemical precipitation methods was mixed with various metal oxides. Next, transition metals (Pt, Ru, Pd, and In) were doped on the surface of the mixture. Metal-$WO_3$ thick films were prepared using the screen-printing method. The physical and chemical properties of the films were studied by SEM/EDS, XRD, and BET techniques. The measured sensitivity to VOCs is defined as the ratio ($R_a/R_g$) of resistance ($R_{air}$) of $WO_3$ film in the air to resistance ($R_{gas}$) of $WO_3$ film in a VOCs test gas. The sensitivity and selectivity of the films were tested with various VOCs such as acetaldehyde, formaldehyde, methyl alcohol, and BTEX. The thick $WO_3$ film containing 1 wt % of Ru and 5 wt % of $SnO_2$ showed the best sensitivity and selectivity to acetaldehyde gas at an operating temperature of 300 $^{\circ}C$.

• The Transactions of the Korean Institute of Electrical Engineers C
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• v.53 no.2
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• pp.67-72
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• 2004

The microwave dielectric properties and microstructure of the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramic were, investigated. The specimens were prepared by the conventional mixed oxide method with sintering temperature of $1350^{\circ}C$∼$1425^{\circ}C$. According to the XRD patterns, the (1-x)$Mg_4Ta_2O_{9-x}TiO_2$(X=0, 0.3, 0.4) ceramics have the $Mg_4Ta_2O_{9}$ phase(hexagonal). The dielectric constant($\varepsilon$$_{\gamma}$) and density increased with sintering temperature and mole fraction of x. To improve the quality factor and the temperature coefficient of resonant frequency, TiO$_2$($\varepsilon_{r}$=100, $Q{\times}f_{r}$=40,000GHz, $\tau$$_{f}$=＋450 ppm/$^{\circ}C$) was added in $Mg_4Ta_2O_{9}$ ceramics. In the case of the $0.7Mg_4Ta_2O_{9}$-$0.3TiO_2$ and the $0.6Mg_4Ta_2O_{9}$-$0.4TiO_2$ceramics sintered at $1400^{\circ}C$ for 5hr., the microwave dielectric properties were $\varepsilon$$_{\gamma}$=11.72, $Q{\times}f_{r}$=126,419GHz, $\tau_{f}$=-31.82 ppm/$^{\circ}C$ and $\varepsilon_{r}$=12.19, $Q{\times}f_{r}$=109,411GHZ, $\tau$$_{f}$= -17.21 ppm/$^{\circ}C$, respectively.