• Journal of the Korean Crystal Growth and Crystal Technology
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• v.25 no.2
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• pp.45-50
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• 2015

Compositionally graded AlGaN epilayer was grown by HVPE (hydride vapor phase epitaxy) on (0001) c-plane sapphire substrate. During the growth of graded AlGaN epilayer, the temperatures of source and the growth zone were set at $950^{\circ}C$ and $1145^{\circ}C$, respectively. The growth rate of graded AlGaN epilayer was about 100 nm/hour. The changing of Al contentes was investigated by field emission scanning electron microscope (FE-SEM) and energy dispersive spectroscopy (EDS). From the result of atomic force microscope (AFM), the average of roughness in 2 inch substrate of graded AlGaN epilayer was a few nanometers scale. X-ray diffraction (XRD) with the result that the AlGaN (002) peak ($Al_{0.74}Ga_{0.26}N$) and AlN (002) peak were appeared. It seems that the graded AlGaN epilayer was successfully grown by the HVPE method. From these results, we expect to use of the graded AlGaN epilayer grown by HVPE for the application of electron and optical devices.

• Korean Journal of Materials Research
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• v.11 no.5
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• pp.367-371
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• 2001

In this paper, theS $r_2$(T $a_{1-x}$ , N $b_{x}$)$_2$ $O_{7}$(STNO) films among ferroelectric materials having a low dielectric constant for metal-ferroelectric-semiconductor field effect transistor(MFS-FET) were discussed. The STNO thin films were deposited on p-type Si(100) at room temperature by co-sputtering with S $r_2$N $b_2$ $O_{7(SNO)}$ ceramic target and T $a_2$ $O_{5}$ ceramic target. The composition of STNO thin films was varied by adjusting the power ratios of SNO target and T $a_2$ $O_{5}$ target. The STNO films were annealed at 8$50^{\circ}C$, 90$0^{\circ}C$ and 9$50^{\circ}C$ temperature in oxygen ambient for 1 hour. The value of x has significantly influenced the structure and electrical properties of the STNO films. In the case of x= 0.4, the crystallinity of the STNO films annealed at 9$50^{\circ}C$ was observed well and the memory windows of the Pt/STNO/Si structure were 0.5-8.3 V at applied voltage of 3-9 V and leakage current density was 7.9$\times$10$_{08}$A/$\textrm{cm}^2$ at applied voltage of -5V.of -5V.V.V.

• Journal of Powder Materials
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• v.24 no.4
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• pp.302-307
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• 2017

In this study, Fe-Cu-C alloy is sintered by spark plasma sintering (SPS). The sintering conditions are 60 MPa pressure with heating rates of 30, 60 and $9^{\circ}C/min$ to determine the influence of heating rate on the mechanical and microstructure properties of the sintered alloys. The microstructure and mechanical properties of the sintered Fe-Cu-C alloy is investigated by X-ray diffraction (XRD) and field-emission scanning electron microscopy (FE-SEM). The temperature of shrinkage displacement is changed at $450^{\circ}C$ with heating rates 30, 60, and $90^{\circ}C/min$. The temperature of the shrinkage displacement is finished at $650^{\circ}C$ when heating rate $30^{\circ}C/min$, at $700^{\circ}C$ when heating rate $60^{\circ}C/min$ and at $800^{\circ}C$ when heating rate $90^{\circ}C/min$. For the sintered alloy at heating rates of 30, 60, and $90^{\circ}C/min$, the apparent porosity is calculated to be 3.7%, 5.2%, and 7.7%, respectively. The hardness of the sintered alloys is investigated using Rockwell hardness measurements. The objective of this study is to investigate the densification behavior, porosity, and mechanical properties of the sintered Fe-Cu-C alloys depending on the heating rate.

• Korean Journal of Materials Research
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• v.24 no.10
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• pp.515-519
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• 2014

The aim of this paper is to consider the effect of annealing on the coefficient of thermal expansion (CTE) of electroplated Invar Fe-Ni alloy. The CTE of the as-electroplated alloy is lower than those of alloys annealed at $400^{\circ}C$ and $800^{\circ}C$. XRD peaks become sharper as the as-electroplated alloy is annealed, which means the grain growth. The average grain sizes of as-electroplated and as-annealed alloys at $400^{\circ}C$ and $800^{\circ}C$ are 10 nm, 70 nm, and $2{\mu}m$, respectively, as determined by TEM and EBSD analyses. The CTE variation for the various grain sizes after annealing may come from the magnetostriction effect, which generates strain due to changes in the magnetization state of the alloys. The thermal expansion coefficient is considered to be affected by nano grain size in electroplated Fe-Ni Invar alloys. As grain size decreases, ferromagnetic forces might change to paramagnetic forces. The effect of lattice vibration damping of nano grain boundaries could lead to the decrease of CTE.

• Architectural research
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• v.12 no.1
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• pp.49-55
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• 2010

Stone powder sludge is a by-product of the manufacturing process of crushed sand. Most of it is dumped with soil in landfills, and the disposal of stone powder sludge causes a major environmental problem. This paper investigates the applicability of stone powder sludge in fly ashbased geopolymer. For this, stone powder sludge was used to replace fly ash at a replacement ratio of 50% and 100% by weight. The compressive strength of the samples was measured and scanning electron microscopy/ energy dispersive spectroscopy (SEM/EDS) analysis and X-ray diffraction (XRD) were performed. The test results indicated that the optimum level of the alkali activator ratio ($Na_2SiO_3$/NaOH) for fly ash-based geopolymer using stone powder sludge was 1.5. The strength development is closely related to the NaOH solution concentration. In addition, the compressive strength of the sample cured at $25^{\circ}C$ was significantly improved between 7 days and 28 days, even though the strength of the sample showed the lowest value at 7 days. Microscopy results indicated that a higher proportion of unreacted fly ash spheres remained in the sample with 5M NaOH, and some pores on the surface of the sample were observed.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.11a
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• pp.126-130
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• 1995

$CdS_{1-x}Te_{1-x}$ polycrystalline thin films were fabricated from CdS and CdTe powder by co-evaporation method at $10^{-6}$ Torr. The Optimum evaporation condition was substrate temperature $T_{s}$=$150^{\circ}C$, evaporation time t=30 min. XRD spectrums indicated that the crystal structure chanced from zinc blonde (x$\leq$0.22) to wurtzite (x$\geq$0.96) through mixed structure (0.22$\leq$0.74) as composition value x increase to CdS. Conductive type was n-type by hot point probe method. van der Pauw method was not applicable for x<0,5 due to high hall voltages, Electrical resistivity and Hall carrier mobility were decreased as x increase, while Hall carrier concentration was increased. The optical bandgap of $CdS_{1-x}Te_{1-x}$ polycrystalline thin films measure d at R.T. had quardratic form and the bowing parameter was fitted as 1.98eV for theoretical value of 2.0eV. I-V characteristics of In/CdTe/$CdS_{x}Te_{1-x}$Au Schottky diodes showed that CdS-rich one had better forward characteristics than CdTe-rich one.

• Journal of Environmental Science International
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• v.24 no.9
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• pp.1145-1153
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• 2015

PVC-Zeolite composite was prepared by immobilizing zeolite with polyvinyl chloride (PVC). The prepared PVC-Zeolite beads were characterized by using X-ray diffractometer (XRD), fourier transform infrared spectrometer (FTIR), thermo gravimetric analyzer (TGA), and scanning electron microscopy (SEM). The removal properties of Sr and Cs ions from aqueous solution were investigated in batch experiment. The removal efficiencies of Sr and Cs ions by the PVC-Zeolite beads were dependent on the initial pH of solution. The removal efficiencies sharply increased at below pH 4 and was kept constant at pH 4 or more. The adsorption kinetics of Sr and Cs ions by the PVC-Zeolite beads were fitted well by the pseudo-second-order model ($r^2$>0.99) more than pseudo-first-order model. The maximum adsorption capacities of Sr and Cs ions calculated from Langmuir isotherm model were 39.37 mg/g and 55.87 mg/g, respectively.

• Korean Journal of Materials Research
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• v.26 no.11
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• pp.623-627
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• 2016

$La_{1-x}Ba_xMnO_3$ (x = 0.30, 0.35 and 0.40) samples have been prepared by solid-state reaction method. The X-ray diffraction (XRD) study showed that all the samples crystallized in a rhombohedral structure with an R-3c space group. Variation of the magnetization as a function of the temperature and applied magnetic field was carried out. All the samples revealed ferromagnetic to paramagnetic (FM-PM) phase transition at the Curie temperature $T_C{\sim}342K$. The magnetic entropy change was also studied through examination of the measured magnetic isotherms M(H, T) near $T_C$. The magnetocaloric effect was calculated in terms of the isothermal magnetic entropy change. The maximum entropy change reaches a value of 1.192 J/kgK under a magnetic field change of 2.5T for the $La_{0.6}Ba_{0.4}MnO_3$ composition. The relative cooling power (RCP) is 79.31 J/kg for the same applied magnetic field.

• Journal of Surface Science and Engineering
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• v.37 no.3
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• pp.146-151
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• 2004

Indium tin oxide (ITO) is widely used to make a transparent conducting film for various display devices and opto-electric devices. In this study, ITO films on glass substrate were fabricated by inductively coupled plasma (ICP) assisted dc magnetron sputtering. A two-turn rf coil was inserted in the process chamber between the substrate and magnetron for the generation of ICP. The substrates were not heated intentionally. Subsequent post-annealing treatment for as-deposited ITO films was not performed. Low-temperature deposition technique is required for ITO films to be used with heat sensitive plastic substrates, such as the polycarbonate and acrylic substrates used in LCD devices. The surface roughness of the ITO films is also an important feature in the application of OLEDs along with the use of a low temperature deposition technique. In order to obtain optimum ITO thin film properties at low temperature, the depositions were carried out at different condition in changing of Ar and $O_2$ gas mixtures, ICP power. The electrical, optical and structural properties of the deposited films were characterized by four-point probe, UV/VIS spectrophotometer, atomic force microscopy(AFM) and x-ray diffraction (XRD). The electrical resistivity of the films was -l0$^{-4}$ $\Omega$cm and the optical transmittance in the visible range was ＞85%. The surface roughness ( $R_{rms}$) was -20$\AA$.>.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 2000.07a
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• pp.460-463
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• 2000

The current-voltage characteristics of the sandwich system at different annealing temperatures and different bias voltages have been studied. In order to prepare the Al/V$O_X$/Al sandwich devices structure, thin films of vanadium oxide(V$O_X$) was deposited by r.f. magnetron sputtering from $V_2$$O_5$ target in 10% gas mixture of argon and oxygen, and annealed during lhour at different temperatures in vacuum. Crystall structure, surface morphology, and thickness of films were characterized through XRD, SEM and I-V characteristics were measured by electrometer. The films prepared below 20$0^{\circ}C$ were amorphous, and those prepared above 300 $^{\circ}C$were polycrystalline. At low fields electron injected to conduction band of vanadium oxide and formed space charge, current was limited by trap. Conduction mechanism at mid fields due to Schottky emission, while at high fields it changed to Fowler-Nordheim tunneling effects.