• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.14 no.6
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• pp.455-459
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• 2001

In this paper, the dielectric and pizoelectric properties of 0.05Pb(M $n_{04}$ $W_{0.2}$N $b_{0.4}$) $O_3$-0.95(PbZ $r_{x}$ $Ti_{1-x}$ ) $O_3$+yN $b_2$ $O_{5}$ , are investigated as a function of the mole ratio of Zr and the amount of N $b_2$ $O_{5}$ . Also, the phase is analyzed by XRD. When the mole ratio of Zr is 0.51, the electromechanical coupling coefficient( $k_{p}$ ), relative dielectric constant ($\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ ), piezoelectric stain constrain ( $d_{33}$ and dielectric loss tangent show maximum, while the mechanical quality factor shows minimum value ; $k_{p}$ =56.5%, $d_{33}$ =258pC/N, $\varepsilon$$^{T}$ $_{33}$ /$\varepsilon$$_{0}$ =1170, $Q_{m}$ =1150, tan$\delta$=0.51%. At that composition, MPB which rhombohedral and tetragonal phase coexist in this ternary system is shown by the results of XRD analysis. Also, when the amount of N $b_2$ $O_{5}$ is 0.3wt%, the mechanical quality factor is increased to about 2000. The phase transition temperature of the ternary piezoelectric ceramic system showed about 35$0^{\circ}C$.TEX>.>.>.

• Journal of the Korea Convergence Society
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• v.11 no.10
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• pp.1-7
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• 2020

The manufacturing process of the resistive variable memory device, which is the based of neuromorphic device, maintained the continuity of vacuum process and applied plasma module suitable for the production of the ReRAM(resistive random access memory) and process technology for the neuromorphic computing, which ensures high integrated and high reliability. The ReRAM device of the oxide thin-film applied to the plasma module was fabricated, and research to improve the properties of the device was conducted through various experiments through changes in materials and process methods. ReRAM device based on TiO₂/TiOx of oxide thin-film using plasma module was completed. Crystallinity measured by XRD rutile, HRS:LRS current value is 2.99 × 10³ ratio or higher, driving voltage was measured using a semiconductor parameter, and it was confirmed that it can be driven at low voltage of 0.3 V or less. It was possible to fabricate a neuromorphic ReRAM device using oxygen gas in a previously developed plasma module, and TiOx thin-films were deposited to confirm performance.

• Journal of the Korean institute of surface engineering
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• v.32 no.2
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• pp.165-171
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• 1999

The etching reaction of $UO_2$ in $CF_4/O_2$ gas plasma is examined as functions of $CF_4/O_2$ ratio, plasma power, and substrate temperature at up to $370^{\circ}C$ under the total pressure of 0.30 Torr. It is found that the highest etching rate is obtained at 20% $O_2$ mole fraction, regardless of r. f. power and substrate temperature. The existence of the optimum $CF_4/O_2$ ratio is confirmed by SEM, XPS and XRD analysis. The highest etching reaction rate at $370^{\circ}C$ under 150W exceeds 1000 monolayers/min., which is equivalent to 0.4$\mu\textrm{m}$/min. The mass spectrometry analysis results reveal that the major reaction product is uranium hexa-fluoride $UF_6$. Based on the experimental findings, dominant overall reaction of uranium dioxide in $CF_4/O_2$ plasma is determined : $8UO_2+12CF_4+3O_2=8UF_6+12CO_{2-x}$ where $CO_{2-x}$ represents the undetermined mix of $CO_2$ and CO.

• Bulletin of the Korean Chemical Society
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• v.26 no.8
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• pp.1214-1218
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• 2005

Ti-HMS samples in which titanium species exist in various forms of isolated tetrahedral state, finely dispersed $TiO_2$ cluster, and some in extra-framework anatase phase were prepared via a direct synthesis route using dodecylamine (DDS) as a structure directing agent by systematically varying the titanium loadings between 2 and 50 mol% Ti/(Ti+Si) in substrate composition. Physicochemical properties of the materials were evaluated using XRD, SEM/TEM, N2 adsorption, UV-vis and XANES spectroscopies. Catalytic properties of Ti-HMS in cyclohexene and 2,6-di-tert-butyl phenol (2,6-DTBP) oxidation using aqueous $H_2O_2$, and vapor phase photocatalytic degradation of acetaldehyde were evaluated. High $H_2O_2$ selectivity was obtained in cyclohexene oxidation, and cyclohexene conversion was found primarily dependent on the amount of tetrahedrally coordinated Ti sites. For bulky 2,6-DTBP oxidation and photocatalytic oxidation of acetaldehyde, on the other hand, conversions were found dependent on the total amount of Ti sites and maintaining an uniform mesoporous structure in the catalysts was not critical for efficient catalysis.

• Journal of the Korean Ceramic Society
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• v.40 no.6
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• pp.530-538
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• 2003

Samples with the nominal composition, B $i_{1.84}$P $b_{0.34}$S $r_{1.91}$C $a_{2.03}$C $u_{3.06}$ $O_{10+}$$\delta$/ (110 K phase) high $T_{C}$ superconductors containing MgO as an additive were fabricated by a solid-state reaction method. Samples with 5~50 wt％ MgO were sintered at 820~86$0^{\circ}C$ for 24 h. The structural characteristics, critical temperature and grain size of the samples with different MgO contents were analyzed by XRD and SEM. As the MgO content increased, the intensity of MgO peaks and ratio of Bi-2212 phase in superconductors were intensified and the proportion of the phase transition from Bi-2223 to Bi-2212 was increased.d.creased.d.

• Membrane and Water Treatment
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• v.9 no.2
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• pp.95-104
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• 2018

Copper pollution around the world has caused serious public health problems recently. The heavy metal adsorption on traditional membranes from wastewater is limited by material properties. Different adsorptive materials are embedded in the membrane matrix and act as the adsorbent for the heavy metal. The carbonized leaf powder has been proven as an effective adsorbent material in removing aqueous Cu(II) because of its relative high specific surface area and inherent beneficial groups such as amine, carboxyl and phosphate after carbonization process. Factors affecting the adsorption of Cu(II) include: adsorbent dosage, initial Cu(II) concentration, solution pH, temperature and duration. The kinetics data fit well with the pseudo-first order kinetics and the pseudo-second order kinetics model. The thermodynamic behavior reveals the endothermic and spontaneous nature of the adsorption. The adsorption isotherm curve fits Sips model well, and the adsorption capacity was determined at 61.77 mg/g. Based on D-R model, the adsorption was predominated by the form of physical adsorption under lower temperatures, while the increased temperature motivated the form of chemical adsorption such as ion-exchange reaction. According to the analysis towards the mechanism, the chemical adsorption process occurs mainly among amine, carbonate, phosphate and copper ions or other surface adsorption. This hypothesis is confirmed by FT-IR test and XRD spectra as well as the predicted parameters calculated based on D-R model.

• Progress in Superconductivity
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• v.4 no.2
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• pp.153-156
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• 2003

We have studied fabrication of $MgB_2$ thin film on $SrTiO_3$ (001) and r-cut $A1_2$$O_3$ substrates by rf magnetron sputtering method using and $ MgB_2$ single target and two targets of Mg and B, respectively. Based on P -T phase diagram of $MgB_2$ and vapor pressure curves of Mg and B, a three-step process was employed. B layer was deposited at the bottom to enhance the film adhesion to the substrate. Secondly, co-sputtering of Mg and B was done. Finally, Mg was sputtered on top to compensate fur the loss of Mg during annealing. Subsequently, $MgB_2$ films were in-situ annealed in various conditions. The sample fabricated using the three-step process showed $T_{c}$ of 24 K and formation of superconducting $MgB_2$ phase was confirmed by XRD spectra. In case of co-sputtering deposition, $T_{c}$ depended on annealing time and argon pressure. However, those made by single-target sputtering showed non-superconducting behavior or low transition temperature, at best.est.

• Bulletin of the Korean Chemical Society
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• v.34 no.7
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• pp.1995-2000
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• 2013

Layered $Li_{1.2}(Fe_{0.16}Mn_{0.32}Ni_{0.32})O_2$ was prepared by the mixed hydroxide method at various temperatures. Xray diffraction (XRD) pattern shows that this material has a ${\alpha}-NaFeO_2$ layered structure with $R{\bar{3}}m$ space group and that cation mixing is reduced with increasing synthesis temperature. Scanning electron microscopy (SEM) reveals that nano-sized $Li_{1.2}(Fe_{0.16}Mn_{0.32}Ni_{0.32})O_2$ powder has uniform particle size distribution. X-ray absorption near edge structure (XANES) analysis is used to study the local electronic structure changes around the Mn, Fe, and Ni atoms in this material. The sample prepared at $700^{\circ}C$ delivers the highest discharge capacity of 207 $mAhg^{-1}$ between 2-4.5 V at 0.1 $mAcm^{-2}$ with good capacity retention of 80% after 20 cycles.

• Journal of Korea Foundry Society
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• v.25 no.3
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• pp.123-127
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• 2005

0.8wt.% C과 $0.75{\sim}3.2$(0.75, 1, 1.26, 1.44, 1.89, 2.1, 2.46, 2.94, 3.22)wt.% Si을 함유한 고탄소 고실리콘 강에서 Si의 함량이 미세조직과 processing window에 미치는 영향에 대해 조사하였다. 열처리는 $940^{\circ}C$에서 1시간 동안 오스테나이징을 실시한 후, $320^{\circ}C$에서 $0.2{\sim}300$분 동안 오스템퍼링을 하였다. 미세조직에서, 0.75 wt.% Si을 함유한 강에서 국부적으로 오스페라이트(ausferrite)가 존재하는 것을 확인하였다. Processing window는 경도 및 XRD 측정으로 결정하였다. $t_{1}$은 Si의 함량이 2.5 wt.% 이하에서는 거의 변화가 없다가,2.5 wt.% 이상에서는 감소하는 결과를 보였다. 반면, $t_{2}$는 Si의 함량이 증가함에 따라 연속적으로 증가하였다. 즉, 0.8 wt.% C을 함유한 강에서 processing window는 Si의 함량이 약 2.5 wt.%일 때 열렸다.

• Electrical & Electronic Materials
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• v.6 no.3
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• pp.241-247
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• 1993

본 연구에서는 투광성 0.085Ba(L $a_{1}$2/N $b_{1}$2/) $O_{3}$- 0.915Pb(Z $r_{y}$ $Ti_{1-y}$) $O_{3}$(0.45.leq.y.leq.0.70)세라믹을 2단 소성법으로 제작한 후, PbZr $O_{3}$조성 및 온도에 따른 구조적, 강유전적특성을 측정하였다. XRD측정 결과, PbZr $O_{3}$조성이 감소할수록 결자상수 및 단위격자 체적은 감소하였으며 시편의 결정구조는 입방정계에서 능면체정계, 정방정계로 변화되었다. 8.5/60/40시편의 경우 포화분극, 잔류분극 및 항전계가 각각 33.28[.mu.C/$cm^{2}$], 4.15[kV/cm]로 전형적인 메모리 특성을 나타내었으며 PbZr $O_{3}$조성이 증가함에 따라 강유전 이력곡선은 slim loop특성을 나타내었다. 잔류분극은 온도가 증가함에 따라 감소하였으며 특히 PE-FE상경계 부근에 위치한 조성의 경우, 상전이 온도 이하의 온도에서 급격히 감소하는 경향을 나타내었다.다.