• ETRI Journal
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• v.11 no.4
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• pp.50-56
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• 1989

초고집적 반도체 제조에 널리 쓰이고 있는 티타늄 실리사이드 박막의 형성 조건에 따른 특성을 분석하였다. 실리콘 웨이퍼 위에 티타늄 박막을 스퍼터링 방식으로 증착하고, 급속 열처리(RTA) 방식으로 실리사이드화 온도 및 시간을 변화시켰다. 박막의 깊이에 따른 조성변화를 측정하기 위하여 AES 및 RBS 분석을, 결정구조의 분석을 위하여 XRD를, 전기적 특성을 평가하기 위하여 4-point probe로 면저항($R_s$)을측정하였다. 열처러 온도가 $500^{\circ}C$에서 부터 티타늄과 실리콘의 혼합이 일어나기 시작하여, $600~700^{\circ}C$에서는 거의 대부분의 티타늄이 2배 정도의 실리콘과 $Tisi_2$ 형성에 필요한 조성을 이루었으나, 반도체 공정에서 목표로 하는 전기전도성을 가지는 C54 $Tisi_2$ 결정구조를 형성하기 위해서는 $700^{\circ}C$이상에서 30초 이상의 열처리 조건이 필요하였다. 특히 열처리전에 이입되기 쉬운 산소 및 질소 등이 티타늄과 실리콘의 혼합과 실리사이드 결정화에 중요한 영향을 미치며, 이를 방지하기 위하여 티타늄 표면을 비정질 실리콘으로 덮은 경우에 C54 $Tisi_2$의 형성이 쉽게 이루어지는 효과가 관찰되었다.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.16 no.9
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• pp.753-758
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• 2003

Ti films were deposited onto 100${\times}$100 mm alumina substrates using dc magnetron sputtering under the following conditions; substrate temperature of R.T～400 $^{\circ}C$, annealing temperature of 100～400 $^{\circ}C$, and sputtering gas pressure of 4${\times}$10$^{-3}$ Torr～4${\times}$10$^{-2}$ Torr. And the films were examined by X-ray diffraction analysis (XRD), scanning electron microscopy(SEM) and 4-point measurement system. The best electrical and structural properties was obtained by substrate temperature of ～200 $^{\circ}C$, target-substrate distance of ～14 cm and sputtering pressure of ～1${\times}$10$^{-2}$ Torr. Also at that condition the most excellent adhesion was observed.

• Journal of the Korean Institute of Electrical and Electronic Material Engineers
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• v.20 no.12
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• pp.1072-1076
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• 2007

We prepared the Al doped ZnO (AZO) thin film on polyethersulfon (PES) without any substrate heating by Facing Targets Sputtering (FTS) system. FTS system has two different facing targets. One is ZnO doped the content of Al 2 wt% and the other is Zn in order to decrease resistivity. The electrical, structural and optical properties of AZO thin films were investigated. To evaluate the as-deposited thin film properties, we employed four-point probe (CMT-R100nw, Changmin), Surface profiler (Alpha-step, Tencor), UV/VIS spectrometer (HP), X-ray diffractometer (XRD, Rigaku) and Field Emission Scanning Electron Microscopy (FESEM, Hitachi S-4700). As a result, We obtained that AZO thin film deposited on PES substrate at a DC Power of 150 W, working pressure of 1 mTorr and $O_2$ gas flow ratio of 0.2 exhibited the resistivity of $4.2{\times}10^{-4}\;[{\Omega}cm]$ and the optical transmittance of about 85 % in the visible range.

• Membrane and Water Treatment
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• v.7 no.6
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• pp.495-505
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• 2016

Mesoporous MCM-41 was deposited on an inexpensive disk shaped ceramic support through hydrothermal technique for ultrafiltration of $Fe^{3+}$ from aqueous solution. The ceramic support was fabricated using uni-axial compaction technique followed by sintering at $950^{\circ}C$. The characteristics of MCM-41 powder as well as the composite membrane were examined by X-ray diffraction (XRD), thermogravimetric analysis (TGA), field emission scanning electron microscope (FESEM), porosity and pure water permeation test. The XRD result revealed the good crystallinity and well-resolved hexagonally arranged pore geometry of MCM-41. TGA profile of synthesized MCM-41 zeolite displayed the three different stepwise mechanisms for the removal of organic template. The formation of MCM-41 on the porous support was verified by FESEM analysis. The characterization results clearly indicated that the accumulation of MCM-41 by repeated coating on the ceramic disk directs to reduce the porosity and pore size from 47% to 23% and 1.0 to $0.173{\mu}m$, respectively. Moreover, the potential of the fabricated MCM-41 membrane was investigated by ultrafiltration of $Fe^{3+}$ from aqueous stream at various influencing parameters such as applied pressure, initial feed concentration and pH of solution. The maximum rejection 85% was obtained at applied pressure of 276 kPa and the initial feed concentration of 250 ppm at pH 2.

• Journal of the Korean Vacuum Society
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• v.16 no.6
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• pp.446-452
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• 2007

[ $(Pb_{1.1},La_{0.08})(Zr_{0.65}.Ti_{0.35})O_3$ ] thin films on the $Pt/Ti/SiO_2/Si$, $TiO_2(interlayer)/Pt/Ti/SiO_2/Si$ substrate were fabricated by the R.F. magnetron-sputtering method and considered their characteristics depending on $TiO_2$ interlayer. Changing the deposition conditions of $TiO_2$ interlayer, we obtained $TiO_2$ anatase single phase and rutile single phase. PLZT was deposited on these substrates and analyzed by x-ray diffraction(XRD) for there crystallinity and orientation. To investigate $PLZT-TiO_2$, $TiO_2-Pt$ interface, glow discharge spectrometer(GDS) analysis was carried out and we performed electrical measurements for dielectric properties of PLZT thin films. The PLZT thin film on $TiO_2$ anatase interlayer was found to have (110)-preferred orientation and 12.6 ${\mu}C/cm^2$ remaining polarization value.

• Bulletin of the Korean Chemical Society
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• v.31 no.2
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• pp.339-343
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• 2010

A series of $Ce_1Mg_xZr_{1-x}O_2$ (CMZO) mixed metal oxide with different molar ratio were prepared by simple co-precipitation method. The prepared materials were tested for their catalytic activity performance using Knoevenagel condensation of various aromatic aldehydes with barbituric acid under solvent-free condition in microwave. The best catalytic activity was obtained with CMZO (1:0.6:0.4). The synthesized materials were characterized by using XRD, FT-IR, SEM-EDS techniques.

• Proceedings of the Korean Institute of Electrical and Electronic Material Engineers Conference
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• 1995.05a
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• pp.26-30
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• 1995

We describe the preparation and characterization of epitaxial thin films made with high temperature superconductor, $YBa_2Cu_3O_{7-\delta}$. The influence of processing parameters for YBCO thin films on MgO substrates in-situ grown by the pulsed laser deposition, including parameters of a laser beam energy, oxygen pressure, substrate temperature, target-substrate dis-tance is discussed. The characteristics of YBCO thin films were analyzed by using XRD, R-T measurement, AFM, crosssectional TEM, and RBS. For examples of microwave device applications, The fabrication and characterization of the microstrip lowpass filter and bandpass filter are also presented.

• Proceedings of the KIEE Conference
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• 1993.11a
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• pp.225-227
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• 1993

Pb(Zr, Ti)$O_3$ ferroelectric thin layers were deposited onto Pt/$SiO_2$/Si substrates by Sol-Gel processing and annealed by RTA at $600^{\circ}C$ for $20{\sim}30\;sec$. microstructure of the films was examined by XRD and SEM analysis. Electrical properties of PZT thin films with different Zr/Ti ratio yield $P_r$ ranging $10{\sim}21{\mu}C/cm^2$, $E_c$, ranging $37.5{\sim}137.5\;kV/cm$, switching times faster than 180nsec, and leakage current about $20{\mu}A/cm^2$. The film was endured about $10^{10}$ fatigue cycles.

• 한국전기화학회:학술대회논문집
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• 2004.06a
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• pp.293-296
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• 2004

고용량 $LiNi_{1-y}M_yO_2$(M=Al, Zn and Ti, y=0.000, 0.005, 0.010, 0.025, 0.050 and 0.100) 양극재료를 합성하기 위하여 연소법을 사용하였다. 합성한 시료들을 X-선회절 분석, 미세구조관찰, 전자침미세분석(EPMA)을 하였다. battery 충${\cdot}$방전기를 사용하여 리튬의 삽입${\cdot}$추출 반응으로 인하여 나타나는 충${\cdot}$방전 곡선의 변화를 조사하였고, 합성한 각 시편에 대해 충${\cdot}$방전 싸이클 수에 따른 방전용량의 변화를 조사하였다. XRD pattern 분석결과 모든 조성에서 $R\bar{3}m$ 구조를 보여주었다. Ni 자리에 Al, Zn, Ti를 치환한 결과 방전용량은 감소하였으나 M=Al 시료는 싸이클 특성이 증가하였다.

• Journal of the Korean institute of surface engineering
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• v.27 no.3
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• pp.123-133
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• 1994

Oxidation behavior of STS 304 and 430, produced by POSCO, Korea, was studied in order to study the surface defects formed during manufacturing processes. Oxidation experiments were carried out in a preheat-ed furnace at 850~$1, 250^{\circ}C$ in air and in a simulated coke oven gas(COG) atmosphere. The reaction products were examined by XRD, SEM and EDX on their surfaces and cross sections. Protective $Cr_2O_3$-primary oxide film was formed initially, but at critical point this film was broken and a duplex scale consisting of $Fe_2O_3$- and Fe$Cr_2O_4$- was formed. It was more severely attacked in a simulated COG atmosphere than in air, and STS 304 was superior to STS 430 in oxidation resistance.