• 센서학회지
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• 제14권2호
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• pp.63-68
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• 2005

The nano-grained Pd or Pt-doped $SnO_{2}$ thin films were deposited on the alumina substrate at ambient temperature or $300^{\circ}C$ by using an R.F. magnetron sputtering system and then annealed at $650^{\cir}C$ for 1 hour or 4 hours in air. The crystallinity and microstructure of the annealed films were analyzed. A grain size of the thin films was 30 nm to 50 nm. As a result of gas sensitivity measurements to an alcohol vapor of $36^{\circ}C$, the 2 wt.% Pt-doped $SnO_{2}$ thin-film sensor deposited at $300^{\circ}C$ and annealed at $650^{\circ}C$ for 4 hours showed the highest sensitivity.

• 한국세라믹학회지
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• 제39권9호
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• pp.840-845
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• 2002

오존 가스센서는 저가이고 휴대 및 사용이 간편하며 감도가 높고 우수한 선택성을 지닌 반도체식 가스센서가 대안으로 부각되고 있다. 본 연구에서는 R.F. magnetron sputtering법을 이용하여 ITO($In_2O_3 95%,\;SnO_2$ 5%) 박막을 알루미나 기판위에 증착시켰다. 증착시 기판온도는 300$^{\circ}C$와 500$^{\circ}C$였고, 시편의 일부를 공기중 500$^{\circ}C$에서 4시간 동안 열처리하였다. ITO 가스 감지막은 열처리 전${\cdot}$후 모두 결정을 형성하였다. 오존 가스에 대한 감도측정 결과, 300$^{\circ}C$에서 증착한 다음 열처리한 센서에서 가장 높은 감도(1 ppm이하 감지 가능)를 나타내었다. 작동온도가 높을수록 감도는 줄어들었지만 빠른 응답 특성과 안정성을 가졌다.

• 한국세라믹학회지
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• 제39권4호
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• pp.394-400
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• 2002

리튬 이차전지용 부극재료로 미량의 실리콘이 첨가된 주석산화물 박막을 R.F. magnetron sputtering법을 이용하여 제조하였다. 실리콘의 첨가로 인해 주석의 산화상태를 감소시켜서 첫 번째 충방전 동안 비가역성을 감소시키는 전기 화학적 결과를 얻을 수 있었다. 주석 산화물 박막의 결정 배향성은 기판온도가 올라감에 따라서 (110),(101),(211) 면들이 성장하였다. 합성된 박막은 기판온도가 $300^{\circ}C$이고 $Ar:O_2$의 비가 7:3일때, 700mAh/g의 에너지 밀도를 가지며 가장 좋은 가역성능을 보여주었다.

• 열처리공학회지
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• 제13권6호
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• pp.398-404
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• 2000

The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

• 한국진공학회지
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• 제12권4호
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• pp.269-274
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• 2003

The electrical, optical and structural properties of ZnNiO thin _ films deposited on Si substrates using rf-magnetron sputtering method have been investigated before and after the thermal annealing processes. The crystallinity of the ZnNiO thin film become degraded with increasing the Ni contents. This is mainly because the lattice of the thin film was expanded due to the oxygen-deficient conditions. Concerning the electrical properties of the thin film, the carrier concentration increases ($6.81\times10^{14}\textrm{cm}^{-2}$) and Hall mobility decreases (36.3 $\textrm{cm}^2$/Vㆍs) with higher doping concentration of Ni. However, the carrier concentration and Hall mobility became low ($1.10\times10^{14}\textrm{cm}^2$ and high (209.6 $\textrm{cm}^2$/Vㆍs), respectively, after the thermal annealing process at $1000 ^{\circ}C$. We also observed a strong luminescene center peaking at 546 nm in photoluminescence spectra, which was caused by a deep level center in the ZnO band gap with oxygen deficient ZnNiO structure.

• 한국진공학회:학술대회논문집
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• 한국진공학회 2011년도 제40회 동계학술대회 초록집
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• pp.149-149
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• 2011

CdS films were deposited on glass substrates by R.F. magnetron sputtering method and the films were annealed at various substrate temperatures ranging from room temperature to $300^{\circ}C$. Structural properties of the films were studied by X-ray diffraction analysis. The structural parameters as crystallite size have been evaluated. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by increasing substrate temperatures. X-ray diffraction patterns of these films indicated that they contain both cubic (zincblende) and hexagonal (wurtzite) structures as a mixture. Optical properties of the films were measured at room temperature by using UV/VIS spectrometer in the wavelength range of 190 to 1100nm and optical absorption coefficients were calculated using these data. The energy gap of the films was found to decrease, and the band edge sharpness of the optical absorption was seen to oscillate by annealing. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

• 전기학회논문지P
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• 제52권3호
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• pp.107-112
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• 2003

Amorphous carbon nitride thin films have been deposited on silicon (100) by reactive magnetron sputtering method. The basic depositon parameters varied were the r.f. power(up to 250 W), the deposition pressure in the reactor(up to 100 mtorr) and Ar:$N_2$ gas ratio. FT-IR and X-ray photoelectron spectra showed the presence of different carbon-nitrogen bonds in the films. The surface topography of the films was studied by scanning electron microscopy(SEM) and atomic force microscopy(AFM).

• 마이크로전자및패키징학회지
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• 제6권2호
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• pp.51-61
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• 1999

R.f. magnetron sputtering법에 의해 $SrBi_2Ta_2O_9$ 박막을 $Pt/SiO_2$/Si p-tyPp (100) 기판 위에 제조하였다. 제조된 박막을 $800^{\circ}C$에서 열처리한 후 증착 조건에 따라 미세구조와 전기적 특성을 측정하였다. $800^{\circ}C$에서 열처리된 박막은 (006), (111), (200) 및 이차상인 BiPt 피크가 XRD 분석 결과 나타났으며, 가스 압력의 감소와 기판 온도의 증가에 따라 결정입자는 성장하였다. 50mtorr, $100^{\circ}C$에서 증착 후 $800^{\circ}C$에서 열처리한 박막의 두께는 200nm이었다. 이 박막의 잔류분극과 항전계 값은 각각 20.07 $\mu$C/$\textrm {cm}^2$, 79kV/cm이었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• 한국표면공학회:학술대회논문집
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• 한국표면공학회 2005년도 추계학술발표회 및 workshop
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• pp.170-170
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• 2005