• 제목/요약/키워드: R. F. Sputtering

검색결과 216건 처리시간 0.024초

Electrical Properties of ZnO:Al Transparent Conducting Thin Films for Film-Typed Dye Sensitized Solar Cell

  • Kwak, Dong-Joo
    • 조명전기설비학회논문지
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    • 제22권11호
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    • pp.36-43
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    • 2008
  • In this parer aluminium-doped zinc oxide(ZnO:Al) conducting layer was deposited on polyethylene terephthalate(PET) substrate by r. f. magnetron sputtering method. The effects of gas pressure and r. f. sputtering power on the structural and electrical properties of ZnO:Al thin film were investigated experimentally. Especially the effect of position of PET substrate on the electrical properties of the film was studied and fixed to improve the electrical properties and also to increase the deposition rate. The results show that the structural and electrical properties of ZnO:Al thin film were strongly influenced by the gas pressure and sputtering power. The minimum resistivity of $1.1{\times}10^{-3}[{\Omega}-cm]$ was obtained at 5[mTorr] of gas pressure, and 18D[W] of sputtering power. The deposition rate of ZnO:Al film at 5[mTorr] of gas pressure was 248[nm/min]. and is higher by around 3 times compared to that at 25[mTorr].

직류 및 고주파 마그네트론 스퍼터링법으로 증착한 Ti-Al-V-N 박막의 특성 (Characterizations of Ti-Al-V-N Films Deposited by DC and RF Reactive Magnetron Sputtering)

  • 손용운;정인화;이영기
    • 열처리공학회지
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    • 제13권6호
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    • pp.398-404
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    • 2000
  • The Ti-Al-V-N films have been deposited on various substrates by d.c and r.f reactive magnetron sputtering from a Ti-6Al-4V alloy target in mixed $Ar-N_2$ discharges. The films were investigated by means of XRD, AES, SEM/EDX, microhardness, TG and scratch test. The XRD and SEM results indicated that the films were of single B1 NaCl phase having dense columnar structure with the (111) preferred orientation. The composition of Ti-Al-V-N film was the Ti-7.1Al-4.3V-N(wt%) films. Adhesion and microhardness of Ti-Al-V-N films deposited by r.f magnetron sputtering method were better than those deposited by d.c magnetron sputtering method. The anti-oxidation properties of Ti-Al-V-N films were also superior to that of Ti-N film deposited by the same deposition conditions.

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스퍼터링 방법을 이용한 중금속 산화물 유리 박막의 증착 (Deposition of Heavy Metal Oxide Glass Thin Films by R.F. Magnetron Sputtering)

  • 김웅권;허종;제정호
    • 한국세라믹학회지
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    • 제32권6호
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    • pp.669-676
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    • 1995
  • In this study, EO glass films were deposited by R.F. magnetron sputtering using EO glass target. The glass formation of the EO film was greatly dependent on the substrate temperature and the crystallization started at approximately 28$0^{\circ}C$. As the temperature of the substrate or the oxygen content in the sputtering gas increased, UV/VIS/NIR absorption edge moved toward longer wavelength. A wave guiding phenomenon was observed from the prism-coupler experiment and a fluorescence of 1.06${\mu}{\textrm}{m}$ originated from 4Fe3/2longrightarrow4I11/2 transition of Nd3+ was detected from the film containing Nd3+ ions.

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Structural and Optical Properties of CdS Thin Films Deposited by R.F. Magnetron Sputtering

  • 황동현;안정훈;손영국
    • 한국진공학회:학술대회논문집
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    • 한국진공학회 2011년도 제40회 동계학술대회 초록집
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    • pp.149-149
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    • 2011
  • CdS films were deposited on glass substrates by R.F. magnetron sputtering method and the films were annealed at various substrate temperatures ranging from room temperature to $300^{\circ}C$. Structural properties of the films were studied by X-ray diffraction analysis. The structural parameters as crystallite size have been evaluated. The crystallite sizes were found to increase, and the X-ray diffraction patterns were seen to sharpen by increasing substrate temperatures. X-ray diffraction patterns of these films indicated that they contain both cubic (zincblende) and hexagonal (wurtzite) structures as a mixture. Optical properties of the films were measured at room temperature by using UV/VIS spectrometer in the wavelength range of 190 to 1100nm and optical absorption coefficients were calculated using these data. The energy gap of the films was found to decrease, and the band edge sharpness of the optical absorption was seen to oscillate by annealing. The results show that heat treatments under optimal annealing condition can provide significant improvements in the properties of CdS thin films.

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Target-Composition Effect on Hydroxyapatite Thin Films Coated on Titanium by r.f. Sputtering

  • Hamagami, Jun-ichi;Kokubu, Daisuke;Umegaki, Takao;Yamashita, Kimihiro
    • The Korean Journal of Ceramics
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    • 제4권4호
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    • pp.372-376
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    • 1998
  • Using calcium-phosphate-powder targets with the Ca/P ratios of 1.0-1.67, hydroxyapatite ($Ca_{10}(PO_4)_6(OH)_2$, HAp) thin films with 4-7㎛ thickness were prepared on titanium metal plates by r.f. magnetron sputtering, followed an annealing at $200^{\circ}C$ for 24 hr under a high water vapor pressure using an autoclave. All the specimens were systematically characterized by XRD, FT-IR, SEM and EDS analyses. The post-annealed films were confirmed to be a nonstoichiometric oxyhydroxyapatite by XRD and FT-IR measurements.

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SHAPE MEMORY THIN FILM OF TITANIUM-NICKEL FOR MICROACTUATOR FORMED BY SPUTTERING

  • Takei, A.;Ishida, A.
    • 한국표면공학회지
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    • 제29권5호
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    • pp.424-429
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    • 1996
  • Thin films of Ti-Ni alloy were formed by sputtering under various Ar gas pressures and r. f. powers to investigate the optimum sputtering conditions and to demonstrate their shape memory effect. The composition and structure of the films were examined by electron micro-probe analysis and scanning electron microscope. These films were annealed in order to crystallize them. The mechanical property of the annealed films was evaluated by a conventional bending test. The transformation tmeperatures were determined by differential scanning calorimetry. The shape memory behaviour was examined quantiatatively by changing in sample temperature under various constant loads. It was found that the Ar gas pressure had a critical effect on the mechanical property of the thin film,s although the r.f. power also affected it. The films formed at a high Ar gas pressure were too brittle to be bent successfully. However, the films formed at a low Ar gas pressur could be bent and their shape memory behavior was found to be comparable with that of bulk Ti-Ni alloys.

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기판 종류에 따른 스퍼터 증착된 CdS 박막의 구조적, 광학적 특성 (Dependence of Substrate Type on the Properties of CdS Films deposited by r.f. magnetron sputtering)

  • 이재형;최성헌;정학기;이종인;임동건;양계준
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2005년도 하계학술대회 논문집 Vol.6
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    • pp.145-146
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    • 2005
  • Cadmium sulphide (CdS) films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique at room temperature. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter pressure on the structural and optical properties of these films was evaluated.

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ZnO 박막의 기판종류에 따른 구조적, 광학적 특성 (Dependence of Substrate Type on the Properties of ZnO Films deposited by r.f. magnetron sputtering)

  • 이동진;이재형;주정훈;송준태;이규일;양계준;임동건
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2006년도 하계학술대회 논문집 Vol.7
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    • pp.125-126
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    • 2006
  • ZnO Films have been prepared on polycarbonate (PC), polyethylene terephthalate (PET), and Coming 7059 substrates by r.f. magnetron sputtering technique. A comparison of the properties of the films deposited on polymer and glass substrates was performed. In addition, the effect of the sputter power on the structural and optical properties of these films was evaluated.

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스퍼터링 조건에 따른 바나듐 산화막의 감습 특성 (Humidity-Sensitive Properties of Vanadium Oxide Thin Films on Sputtering Conditions)

  • 이승철;최복길;최창규;권광호
    • 한국전기전자재료학회:학술대회논문집
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    • 한국전기전자재료학회 2004년도 추계학술대회 논문집 Vol.17
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    • pp.448-451
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    • 2004
  • Vanadium oxides have been widely used in a variety of technological applications such electrochromic devices as infrared detectors and are expected as a material suitable for gas sensing applications. Thin films of Vanadium oxide (VOx) have been deposited by r.f magnetron sputtering under different oxygen partial pressure ratios and substrate temperatures. Humidity-sensitive properties of resistive sensors having interdigitated electrode structure are characterized. Our sensors show good response to humidity over 20%RH to 80%RH. Vanadium oxide films deposited with 0% $O_2$ partial pressure at foot exhibit greater sensitivity to humidity change than others.

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