• 대한전기학회:학술대회논문집
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• 대한전기학회 1996년도 하계학술대회 논문집 C
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• pp.1576-1578
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• 1996

MgO protection layer in ac PDP prevents the dielectric layer from sputtering of ion in discharge plasma in addition to the contribution to the memory function and also have the additional important roll in lowering the firing Voltage due to a large secondary electron emission yield(${\gamma}$). The methode of Sputtering are easy to apply on mass production and to enlarge the size of the panel and are known to have the superior Adhesion and Uniformity of thin film. MgO protection layer of $1000{\AA}$ on dielectric layer by Reactive R.F magnetron sputtering is formed. Discharge characteristics have done with the formation of protection layer.

• 한국재료학회:학술대회논문집
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• 한국재료학회 1998년도 한국재료학회 춘계학술발표강연 및 논문개요집
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• pp.115-115
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• 1998

• 한국세라믹학회:학술대회논문집
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• 한국세라믹학회 2002년도 추계총회 및 연구발표회 초록집
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• pp.116.1-116
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• 2002

• 한국전기화학회:학술대회논문집
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• 한국전기화학회 1999년도 제2회 총회 및 춘계학술발표회
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• pp.71-71
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• 1999

• 한국재료학회지
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• 제20권4호
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• pp.194-198
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• 2010

Cubic boron nitride (c-BN) is a promising material for use in many potential applications because of its outstanding physical properties such as high thermal stability, high abrasive wear resistance, and super hardness. Even though 316L austenitic stainless steel (STS) has poor wear resistance causing it to be toxic in the body due to wear and material chips, 316L STS has been used for implant biomaterials in orthopedics due to its good corrosion resistance and mechanical properties. Therefore, in the present study, c-BN films with a $B_4C$ layer were applied to a 316L STS specimen in order to improve its wear resistance. The deposition of the c-BN films was performed using an r.f. (13.56 MHz) magnetron sputtering system with a $B_4C$ target. The coating layers were characterized using XPS and SEM, and the mechanical properties were investigated using a nanoindenter. The friction coefficient of the c-BN coated 316L STS steel was obtained using a pin-on-disk according to the ASTM G163-99. The thickness of the obtained c-BN and $B_4C$ were about 220 nm and 630 nm, respectively. The high resolution XPS spectra analysis of B1s and N1s revealed that the c-BN film was mainly composed of $sp^3$ BN bonds. The hardness and elastic modulus of the c-BN measured by the nanoindenter were 46.8 GPa and 345.7 GPa, respectively. The friction coefficient of the c-BN coated 316L STS was decreased from 3.5 to 1.6. The wear property of the c-BN coated 316L STS was enhanced by a factor of two.

• 대한전기학회논문지:전기물성ㆍ응용부문C
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• 제51권12호
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• pp.567-572
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• 2002

In these days, diesel vehicle or power plant emits $NO_X\; and SO_2$ which cause air pollution like acid-rain, ozone layer destroy and optical smoke, therefore there are many kinds of methods considered for removing them such as SCR, catalyst, plasma process, and plasma-catalyst hybrid process. T$TiO_2$ is commonly used as catalyst to remove $NO_X$ gas because it have very excellent chemical characteristic as photo catalyst. In this paper, $NO_X$ sensing characteristic of $TiO_2$ thin film deposited by R.F Magnetron sputtering is investigated. A finger shaped electrode on $Al_2$O$_3$ substrate is designed and $TiO_2$ is deposited on the electrode by the magnetron sputtering deposition system. Chemical composition of the deposited $TiO_2$ thin film is $TiO_{1.9}$ by RBS analysis. When the UV is irradiated on it with flowing air, capacitance of $TiO_2$ thin film increases, however, when NO gas is put into the system with air, it immediately decreases because of photo chemical reaction. and it monotonously decreases with increasing NO concentration.

• 한국세라믹학회지
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• 제40권1호
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• pp.69-76
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• 2003

리튬이차 박막전지로서, 실리콘 첨가(0, 2, 6, 10, 20㏖%)에 따른 주석 산화물 박막을 기판온도 30$0^{\circ}C$, Ar:O$_2$=7:3으로 R.F. magnetron sputtering법으로 제조하였다. 실리콘의 함량이 증가함에 따라, Si-O 결합량이 증가하고 Sn-O 결합량은 감소하였다. 적정량의 실리콘 첨가는 주석의 산화상태를 감소시켜 비가역성을 줄이고 충방전 동안 주석의 부피변화를 막아 사이클 특성이 향상되는 결과를 보여주었다. 6㏖% Si를 첨가한 주석 산화물 박막은 100사이클동안 700mAh/g의 용량을 가지는 가장 좋은 사이클 특성을 나타내었다.

• 대한전기학회:학술대회논문집
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• 대한전기학회 2005년도 제36회 하계학술대회 논문집 C
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• pp.2172-2174
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• 2005

MgO has been used as the material of the protecting layer for AC PDP. AC PDP is influenced by characteristics of the surface glow discharge on the MgO thin film. Because MgO thin film is practically discharge electrodes, the discharge characteristics of MgO thin film should be varied with the method of deposition. In this study, changing order and time of deposition, we use electron beam evaporation system and R.F reactive magnetron sputtering system in the MgO deposition. Particularly, after using electron beam evaporation system, we use R.F. reactive magnetron sputtering system in the MgO deposition, then we could get lower amount of charge and higher luminance efficiency than only using electron beam evaporation system.

• 한국전기전자재료학회:학술대회논문집
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• 한국전기전자재료학회 2000년도 하계학술대회 논문집
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• pp.456-459
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• 2000

Thin films of vanadium oxide(V$O_x$) have been deposited by r.f. magnetron sputtering from $V_2$$O_5$ prget in gas mixture of argon and oxygen. Crystal structure, surface morphology, chemical composition and bonding properties of films in-situ annealed in $O_2$ ambient with various heat-treatment conditions are characterized through XRD, SEM, AES, RBS and FTIR measurements. The filrns annealed below 200 $^{\circ}C$are amorphous, and those annealed above 30$0^{\circ}C$ are polycrystalline. The growth of grains and the transition of vanadium oxide into the higher oxide have been obsenred with increasing the annealing temperature and time. The increase of O/V ratio with increasing the annealing temperature and time is attributed to the diffusion of oxygen and the partial filling of oxygen vacancies. It is observed that the oxygen atoms located on the V-0 plane of $V_2$$O_5$ layer participate more readily in the oxidation process.

• 대한전기학회:학술대회논문집
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• 대한전기학회 1994년도 하계학술대회 논문집 C
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• pp.1236-1238
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• 1994

TiAlN thin films were prepared by a multi target r.f magnetron sputtering system under different conditions. We have investigated the resistivity and T.C.R. (Temperature Coefficient of Resistance) characteristics of TiAlN films deposited on $Al_2O_3$ and glass substrates by sputtering in an $Ar:N_2$ gas mixture. We used Al and Ti metal as Target Material and $Ar:N_2$ gas as working gas. We varied the partial pressure ratio of $N_2/Ar$ from 0.2/7 to 1.0/6.2 (SCCM). And the R.F power of Ti and Al Target also were varied as 160/240, 200/200 and 240/160(W). In this experiment, we can get the precision thin film resistor with a very low T.C.R. (Temperature Coefficient of Resistance) below 25 ppm ${\Omega}/^{\circ}C$.